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    SS98 Datasheet

    Uploaded by

    M_V_G
    This document provides specifications for the BSS 98 N-channel enhancement mode MOSFET transistor. The BSS 98 is a logic level MOSFET with a threshold voltage between 0.8-1.6V. It has a maximum drain current of 0.3A, on-resistance of 3.5 ohms, and breakdown voltage of 50V. Electrical characteristics including capacitance, transconductance, and switching times are provided. Safe operating areas and thermal deratings over temperature are specified. The device is packaged in a TO-92 package.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    SS98 Datasheet

    Uploaded by

    M_V_G
    110 views7 pages
    This document provides specifications for the BSS 98 N-channel enhancement mode MOSFET transistor. The BSS 98 is a logic level MOSFET with a threshold voltage between 0.8-1.6V. It has a maximum drain current of 0.3A, on-resistance of 3.5 ohms, and breakdown voltage of 50V. Electrical characteristics including capacitance, transconductance, and switching times are provided. Safe operating areas and thermal deratings over temperature are specified. The device is packaged in a TO-92 package.

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    This document provides specifications for the BSS 98 N-channel enhancement mode MOSFET transistor. The BSS 98 is a logic level MOSFET with a threshold voltage between 0.8-1.6V. It has a maximum drain current of 0.3A, on-resistance of 3.5 ohms, and breakdown voltage of 50V. Electrical characteristics including capacitance, transconductance, and switching times are provided. Safe operating areas and thermal deratings over temperature are specified. The device is packaged in a TO-92 package.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    110 views7 pages

    SS98 Datasheet

    Uploaded by

    M_V_G
    This document provides specifications for the BSS 98 N-channel enhancement mode MOSFET transistor. The BSS 98 is a logic level MOSFET with a threshold voltage between 0.8-1.6V. It has a maximum drain current of 0.3A, on-resistance of 3.5 ohms, and breakdown voltage of 50V. Electrical characteristics including capacitance, transconductance, and switching times are provided. Safe operating areas and thermal deratings over temperature are specified. The device is packaged in a TO-92 package.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 7

    BSS 98

    SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level

    VGS(th) = 0.8...1.6 V
    Pin 1 S Type BSS 98 Type BSS 98 BSS 98 BSS 98 Pin 2 G Marking SS98 Pin 3 D

    VDS
    50 V

    ID
    0.3 A

    RDS(on)
    3.5

    Package TO-92

    Ordering Code Q62702-S053 Q62702-S517 Q62702-S635

    Tape and Reel Information E6288 E6296 E6325

    Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 50 50 Unit V

    VDS V

    DGR

    RGS = 20 k
    Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current

    VGS Vgs ID

    14 20 A 0.3

    TA = 25 C
    DC drain current, pulsed

    IDpuls
    1.2

    TA = 25 C
    Power dissipation

    Ptot
    0.63

    TA = 25 C

    Semiconductor Group

    12/05/1997

    BSS 98

    Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 200 E 55 / 150 / 56 K/W Unit C

    Tj Tstg RthJA

    Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit

    Static Characteristics Drain- source breakdown voltage

    V(BR)DSS
    50 1.2 0.05 10 1.8 2.8 1.6 0.5 5 100 100

    VGS = 0 V, ID = 0.25 mA, Tj = 25 C


    Gate threshold voltage

    VGS(th)
    0.8

    VGS=VDS, ID = 1 mA
    Zero gate voltage drain current

    IDSS
    A nA nA 3.5 6

    VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 125 C VDS = 30 V, VGS = 0 V, Tj = 25 C


    Gate-source leakage current

    IGSS RDS(on)

    VGS = 20 V, VDS = 0 V
    Drain-Source on-state resistance

    VGS = 10 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A

    Semiconductor Group

    12/05/1997

    BSS 98

    Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit

    gfs
    0.12 0.23 40 15 5 -

    S pF 55 25 8 ns 5 8

    VDS 2 * ID * RDS(on)max, ID = 0.3 A


    Input capacitance

    Ciss Coss
    -

    VGS = 0 V, VDS = 25 V, f = 1 MHz


    Output capacitance

    VGS = 0 V, VDS = 25 V, f = 1 MHz


    Reverse transfer capacitance

    Crss
    -

    VGS = 0 V, VDS = 25 V, f = 1 MHz


    Turn-on delay time

    td(on)

    VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50


    Rise time

    tr
    6 9

    VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50


    Turn-off delay time

    td(off)
    12 16

    VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50


    Fall time

    tf
    15 20

    VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50

    Semiconductor Group

    12/05/1997

    BSS 98

    Electrical Characteristics, at Tj = 25C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max.

    Unit

    A 1 0.3 1.2 V 1.4

    TA = 25 C
    Inverse diode direct current,pulsed

    ISM
    -

    TA = 25 C
    Inverse diode forward voltage

    VSD

    VGS = 0 V, IF = 0.6 A

    Semiconductor Group

    12/05/1997

    BSS 98

    Power dissipation Ptot = (TA)

    Drain current ID = (TA) parameter: VGS 10 V


    0.32

    0.70 W 0.60

    Ptot

    0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20

    ID

    0.24

    0.20

    0.16

    0.12

    0.08 0.15 0.10 0.05 0.00 0 0.04 0.00 0

    20

    40

    60

    80

    100

    120

    160

    20

    40

    60

    80

    100

    120

    160

    TA

    TA

    Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C

    Drain-source breakdown voltage V(BR)DSS = (Tj)

    60 V 58

    V(BR)DSS 57
    56 55 54 53 52 51 50 49 48 47 46 45 -60

    -20

    20

    60

    100

    160

    Tj

    Semiconductor Group

    12/05/1997

    BSS 98

    Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C


    0.70 A 0.60

    Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C


    11

    Ptot = 1W
    lk i h j g
    VGS [V] a 2.0
    b 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0

    RDS (on)
    9 8 7 6 5 4 3 2
    b

    a b

    ID

    0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20


    c e f

    c d e f g h

    d i
    j k l

    g h i kl j

    0.15 0.10 0.05 a 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

    VGS [V] =

    1 V 5.0 0 0.00

    a 2.0

    b 2.5

    c 3.0

    d 3.5

    e f 4.0 4.5

    g 5.0

    h i 6.0 7.0

    j 8.0

    k l 9.0 10.0

    0.10

    0.20

    0.30

    0.40

    0.60

    VDS

    ID

    Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max


    0.65 A 0.55

    Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, VDS2 x ID x RDS(on)max


    0.30 S 0.26

    ID

    0.50 0.45

    gfs

    0.24 0.22 0.20

    0.40 0.35 0.30 0.25 0.20 0.15

    0.18 0.16 0.14 0.12 0.10 0.08 0.06

    0.10 0.05 0.00 0 1 2 3 4 5 6 7 8 V VGS 10

    0.04 0.02 0.00 0.00

    0.10

    0.20

    0.30

    0.40

    A ID

    0.55

    Semiconductor Group

    12/05/1997

    BSS 98

    Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 0.3 A, VGS = 10 V


    9

    Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA


    2.6 V 2.2

    RDS (on)
    7 6 5

    VGS(th)

    2.0 1.8 1.6 1.4

    98%

    98%
    4 3 1.2 1.0 0.8

    typ

    2%

    typ
    2 1 0.2 0 -60 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 0.6 0.4

    Tj

    Tj

    Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz


    10 3

    Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s


    10 1

    pF C 10 2

    IF
    10 0

    Ciss

    10 1

    Coss

    10 -1

    Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)


    10 0 0 10 -2 0.0

    10

    15

    20

    25

    30

    V VDS

    40

    0.4

    0.8

    1.2

    1.6

    2.0

    2.4

    3.0

    VSD

    Semiconductor Group

    12/05/1997

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