TUTORIAL 7

Theoretical Questions: Q1. Explain on the basic operation of the n-channel JFET. Draw the drain characteristics of the mentioned JFET type and denote the important parameters on the graph. Explain why the JFET is called a unipolar device. Your explanation must be based on the n-channel or p-channel device which is biased to operate as an amplifier. What is one advantage of FET over BJT? What is the main advantage of using self-biasing in a JFET amplifier circuit? Draw the self-biasing circuit. State the three basic configurations of the JFET circuit. Compare and give brief description on the circuits voltage gain, input and output impedances. State the main application for each configuration. Describe in detail, with the help of appropriate illustrations, the operation of the n-channel E-MOSFET under the following biasing conditions: drain and source are grounded, no biasing voltage at the gate drain and source are grounded, small positive voltage at the gate small positive voltage at the gate, small positive voltage at the drain and source small positive voltage at the gate, VDS increased from the value in (c) Draw the schematic of the p-channel E-MOSFET in its typical operation. Explain on the drain and transfer characteristics of this circuit. Draw the cross section and the drain characteristics of an n-channel E-MOSFET at the different biasing condition specified below:
VGS < VGS(th) and VDS > 0 VGS > VGS(th) and VDS > VDS(sat) VGS > VGS(th) and VDS = VDS(sat) VGS > VGS(th) and VDS > VDS(sat)

Q2.

Q3. Q4.

Q5.

Q6. (a) (b) (c) (d) Q7.

Q8.

(i) (ii) (iii) (iv) Q9.

Draw the ID versus VDS curve for an ideal n-channel E-MOSFET (NMOS). Label the operating mode regions and write the ID expression for each region. 1

Q10. With the help of illustrations, explain briefly on the operation of the DE and E MOSFETs as amplifiers and comment on the differences. Q11. For the circuit shown below, (a)give detailed explanation on the reason why ID will decrease with the increment of VGG at a fixed VDD . (b)what will happen if VGG = VGS(off) ?
RD
ID
VDD

VGG

Q12. How is the drain current controlled in the n-channel JFET? Use illustrations to help you in giving your explanations.

Calculations: Q1. The JFET in the following diagram has the following characteristics, IDSS = 5mA and VGS(off) = -3V . Determine VGSQ and VO if (a) VG = 0 V (b) VG =10 V

RD 3 k

VG

RS 8 k
Vo

Q2.

Given the drain to ground voltage is equivalent to 5 V for the circuit below. Calculate ID ,VGS ,VDS and VS for this circuit.
+VDD 9V

R1 10 M

RD 4.7 k

R2 2.2 M

RS 3.3 k

Q3.

Calculate the voltage gain and the input and output impedances for the common source circuit shown below. R GS =1000 M, g m = 4000 S and rds = 80 k . Determine the voltage gain if C2 is absent.
VDD

RD 4.7 k
R Supply C 1

C3

vs

vi

RG 390 k

vo

RL 68 k

RS 2.7 k

C2

Q4.

The JFET in the following diagram has Vp = -3 V and IDSS = 9 mA . Calculate the value of all the resistors so that VG = 5 V,ID = 4 mA and VD =11V . The design has 0.05 mA flowing through the voltage divider.

R G1

RD

R G2

RS

Q5.

The gate current can be ignored for the JFET in the circuit below. If VDD = -20 V,IDSS =10 mA,IDQ = 8 mA, VGS(off) = 4 V, R S = 0 and R D =1.5 k , determine VGG and VDSQ
VDD
RD C3
C1

(i) (ii)

+
vi

RG

vo
RS

VGG

Q6.

For the circuit shown below,

(a) (b) (c)

Determine: VS RS1 RS2

VDD

ii

CC

CC RG
v in
CS

iL

R S1 R S2 VS

RL

vL

Q7.

(a)Self-biasing is implemented on the following JFET circuit. Assume that the gate current can be neglected (IG = 0). Show that if VDD > 0, VGS < 0. This condition will enable correct device biasing. (b)If R D = 3 k, R S = 1 k, VDD =15 V and VDSQ = 7 V , calculate IDQ and VGSQ.
VDD
RD

RG
RS

Q8.

Referring to the following circuits, determine the DE MOSFETs mode of operation (depletion, enhancement or zero). Give explanation to your answer. Assume R G is very large that the current flowing through it can be neglected resulting in VRG 0 .

+VDD

+VDD RD RG

RD

RG

RS

(a)

(b)

+VDD RD

-VDD
RD

RG

RS

(c)

(d)

Q9.

The JFET in the following circuit has Vp = -3 V. If VS = -1 V when the device is in its pinched-off region, calculate IDSS.
VSS

1mA
VS = -1V

VDD

Q10. For a JFET that is operating at VGS = -1 V, has Vp = -2 V and IDSS = 8 mA, determine the variation required in the VGS to increase the ID by 0.4 mA. What is the variation required in the VGS to reduce the ID by 0.4 mA from the same initial value. Why is the variation in the VGS different for both cases? What is the JFET type? Give explanations for your answers. Q11. For the circuit
2

shown

below,

VGS(off) = -2 V and K = 2 mA/V 2 .

Given

IDSS = K [ VGS(off) ] . Neglecting the VDS effect on ID in the pinched-off region (also

known as the constant current region or saturation region), calculate the voltage at the source of the transistor. Determine the operation mode of the device. Give two reasons for your answer.
5V

2 mA

Q12. (a)Determine the voltages at the terminal, the transconductance and the voltage gain for the following DE-MOSFET circuit. Given: gain, Av = gm x RD, gm0 = 2000 mho, VGS(off) = -4 V and IDSS = 4 mA. (b)Determine the transistors mode of operation, i.e. whether it is in depletion or enhancement mode. Based on the results from the calculation in (a), give two reasons for your answer.
11V

R1 100 M

RD 1k

v out
v in
R2 10 M

Q13. Each

circuit below has VGS(th) = 2 V, nC ox = 20 A/V , = 0 and L 1 = L 2 =10 m . Find the value of R and the required gate width for Q1 and Q2 to obtain the voltages and current as shown in the diagram.
2

of

the

transistor

in

the

Q2

Q1

amplifier of the circuit below, let R D = 3 k, g m = 2 10 S and rds = 30 k . Using the simplified, low-frequency smallsignal equivalent circuit, find an expression for the voltage-gain ratio A v = v o / v in and then evaluate A v .
-3

Q14. In

the

common

source

VDD RD

vi

RG

RS

CS

Q15. E-MOSFETs are normally found operating as switches in digital ICs. Below is a typical switching circuit. Determine the waveform vout for the shown vin. Use the given drain characteristics to help you in your calculations. Repeat if R is changed to 10 k.
VDD = 20 V

R = 4.7 k

10 0

v in

+ -

v out

Q16. Fixed biasing can be implemented on the E-MOSFET as shown in the diagram below. The drain characteristic of the E-MOSFET is included. R 1 = 60 k, R 2 = 40 k, R D = 3 k, VDD =15 V. Assume IG = 0. (i) Calculate VGSQ. (ii) Determine VDSQ and IDQ from the drain characteristic.
VDD

R1

RD

R2