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    Tutorial - 1st (Unit - 3rd)

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    Saurabh Singh
    The document contains 10 questions related to the working and characteristics of JFETs and MOSFETs. Question 1 asks to explain the construction and working of a JFET, draw its transfer characteristic curve, and relate pinch off voltage, transconductance, drain resistance, and how it can be used as a voltage dependent and variable resistor. Question 2 asks about the advantages of FETs over BJTs and to define some FET parameters. Question 3 asks to derive an expression for drain current based on transfer characteristics of a JFET. The remaining questions involve using device parameters to calculate voltages, currents, and resistance values in various FET circuits and characteristics.

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    Tutorial - 1st (Unit - 3rd)

    Uploaded by

    Saurabh Singh
    82 views4 pages
    The document contains 10 questions related to the working and characteristics of JFETs and MOSFETs. Question 1 asks to explain the construction and working of a JFET, draw its transfer characteristic curve, and relate pinch off voltage, transconductance, drain resistance, and how it can be used as a voltage dependent and variable resistor. Question 2 asks about the advantages of FETs over BJTs and to define some FET parameters. Question 3 asks to derive an expression for drain current based on transfer characteristics of a JFET. The remaining questions involve using device parameters to calculate voltages, currents, and resistance values in various FET circuits and characteristics.

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    Tutorial- 1st (Unit -3rd)

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    The document contains 10 questions related to the working and characteristics of JFETs and MOSFETs. Question 1 asks to explain the construction and working of a JFET, draw its transfer characteristic curve, and relate pinch off voltage, transconductance, drain resistance, and how it can be used as a voltage dependent and variable resistor. Question 2 asks about the advantages of FETs over BJTs and to define some FET parameters. Question 3 asks to derive an expression for drain current based on transfer characteristics of a JFET. The remaining questions involve using device parameters to calculate voltages, currents, and resistance values in various FET circuits and characteristics.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Download as doc, pdf, or txt
    82 views4 pages

    Tutorial - 1st (Unit - 3rd)

    Uploaded by

    Saurabh Singh
    The document contains 10 questions related to the working and characteristics of JFETs and MOSFETs. Question 1 asks to explain the construction and working of a JFET, draw its transfer characteristic curve, and relate pinch off voltage, transconductance, drain resistance, and how it can be used as a voltage dependent and variable resistor. Question 2 asks about the advantages of FETs over BJTs and to define some FET parameters. Question 3 asks to derive an expression for drain current based on transfer characteristics of a JFET. The remaining questions involve using device parameters to calculate voltages, currents, and resistance values in various FET circuits and characteristics.

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    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
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    KALI CHARAN NIGAM INSTITUTE OF TECHNOLOGY, BANDA

    DEPARTMENT OF ELECTRONIC AND COMMUNICATION Tutorial- 1st (unit -3rd) Attempt all questions
    Q-1 Explain the working of a JFET along with its construction with neat sketch. Also draw its transfer Characteristic curve with explain it? Uptu-2006-07 Q-2 What are advantage of the FET over a conventional bipolar junction transistor? Define pinch off voltage, amplification factor transconductance, and drain resistance of FET and relate them ? How an FET is used a voltage dependent resistor and voltage Variable resistor? Uptu-2005-06 Q-3 Write the Expression for ID on the basis of transfer characteristics? A JFET has VGS(OFF) = -8V, IDSS =12mA.Find ID for VGS=0, -4V, -8, -12V ? Q-4 The following readings were obtained experimentally from a FET VGS -0.1V -0.1V -0.4V VDS 5V 14V 14V ID 8mA 8.3mA 7.1mA Determine (a) a.c resistance (b) Transconductance (iii) Amplification factor Q-5 In the JFET circuit shown in figure,the following data are given below VDD =25V, ID= 2mA , RD= 3k , RS = 400 find (i) VGS (ii) VDS ?

    Q-6 Following given the network as shown in figure, Determine (i) IDQ (ii)VGSQ (iii) VD (iv) VDG (v) VDS (vi) VS Uptu-2005-06

    Q-7 With a neat sketch and explain the working of a P-channel Depletion mode MOSFET ? Draw the transfer characteristics? Q-8 An n-channel JFET, having Vp= - 4V, IDSS = 10mA is used in the circuit in figure. The parameters value are R1=450k, R2=90k, RS=2k, RD=2k , VDD=18 V determine ID and VDS?

    Q-9 Consider the n-channel Enhancement MOSFET shown in figure, if VT = 4V, ID = 1.28mA at VGS=12V, determine the value of RD for operation at VDS=8V. Uptu-2007-08

    Q-10 Describe briefly the construction and working of a MOSFET in Enhancement mode? Draw its characteristics? Uptu-2006-07

    KALI CHARAN NIGAM INSTITUTE OF TECHNOLOGY, BANDA


    DEPARTMENT OF ELECTRONIC AND COMMUNICATION Hint sheet ( tutorial- 1st (unit -3rd))
    Q-1 Hint : see notes (JFET)

    Q-2 Hint : see notes (JFET )

    Q-3 Hint : ID=IDSS(1-VGS\VP)2

    Q-4 Hint : rd ==dVDS /dID, gm = dID /dVGS ,

    = g m rd

    Q-5 Hint :

    V DS

    = VDD - ID (RD + RS ),

    VGS = - ID RS

    Q-6 Hint : VG=R2*VDD\(R1+R2 ),

    VGS = VG - ID RS

    Q-7 Hint :see notes(MOSFET)

    Q-8 Hint : VG=R2*VDD\R1+R2 ,

    VGS=VG - ID RS , IDQ = IDSS (1 - VGSQ\VP)2

    Q-9 Hint : ID=K(VGSQ - VT)2 Q-10 Hint : see notes (MOSFET)

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