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    Chapter 12

    Uploaded by

    Felipe Souza
    Cap 12

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd

    Chapter 12

    Uploaded by

    Felipe Souza
    24 views42 pages
    Cap 12

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    © © All Rights Reserved

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    PPTX, PDF, TXT or read online from Scribd

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    Cap 12

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    24 views42 pages

    Chapter 12

    Uploaded by

    Felipe Souza
    Cap 12

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 42

    MOSFETs

    Chapter 12
    Topics Covered in Chapter 12
    • Basic Concepts
    • The Ohmic Region
    • Digital Switching
    • CMOS
    • Power FETs
    • MOSFET Amplifiers
    • MOSFET Testing

    Copyright © 2016 McGraw-Hill Education. Permission required for reproduction or display.


    Basic Concepts
    p-channel Enhancement-Mode MOSFET

    • Normally “Off” device.


    • Unipolar device (fast switching).
    • A negative gate voltage is required for
    current to flow through the device.
    Basic Concepts
    p-channel Enhancement-Mode MOSFET
    Basic Concepts
    • The SiO2 layer is very thin and is easily
    damaged by static discharge or
    excessive gate-source voltage.
    • Proper ESD precaution must be
    observed when handling.
    Basic Concepts
    n-channel Enhancement-Mode MOSFET

    • Normally “Off” device.


    • Unipolar device (fast switching).
    • A positive gate voltage is required for
    current to flow through the device.
    Basic Concepts
    n-channel Enhancement-Mode MOSFET
    Basic Concepts
    • The SiO2 layer is very thin and is easily
    damaged by static discharge or
    excessive gate-source voltage.
    • Proper ESD precaution must be
    observed when handling.
    Basic Concepts
    Basic Concepts

    The minimum VGS required to create the inversion


    layer is called the threshold voltage (VGS(th)).
    Family of Curves
    5 +10

    3 VGS(V)
    ID (mA) +5
    2
    +2.8
    1
    VGS(th)
    0 0
    VDS (V)
    The Ohmic Region
    Active Region

    Ohmic
    Region
    Ohmic Region
    • While operating in the ohmic region, the
    MOSFET has predictable resistance
    between the drain and the source.

    VDS ( on )
    RDS ( on ) 
    ID ( on )
    Ohmic Region
    • While operating in the ohmic region, the
    MOSFET behaves like a resistor.
    VDS ( on )
    RDS ( on ) 
    ID ( on )
    1V
    RDS ( on ) 
    3.3 mA
    RDS ( on )  303 
    Biasing in the Ohmic region
    • The MOSFET is biased in the ohmic region
    when: ID(sat) < ID(on) while VGS = VGS(on)
    Switching between Cutoff & Saturation
    Given: RDS = 5 Ω

    VS = 0V, vout = VDD = 20 V


    VS = 5V, vout = ?
    RDS
    v out  xVDD
    RD  RDS
    5
    v out  x 20V
    5   1k 
    v out  99 mV
    Switching between Cutoff & Saturation

    Notice how Ch 2 never reaches 0V.


    Decrease the V/div on the scope.
    Switching between Cutoff & Saturation

    RDS = 5 Ω V1 = 0V, vout = VDD = 20 V


    V1 = 5V, vout = 99 mv
    MOSFETS – Digital Switching
    • Passive Load Switching occurs when
    RDS(on) << RD.

    vin = 0 V, vout = High


    vin = High, vout = Low
    MOSFETS – Digital Switching
    • Active Load Switching
    – The upper MOSFET (Q1)
    acts like a large resistance.
    – The lower MOSFET (Q2)
    acts like a switch.
    MOSFETS – Digital Switching

    VDS ( active ) 10V


    RD    5 k
    ID ( active ) 2 mA
    MOSFETS – Digital Switching

    RD  5 k 

    1V
    RDS ( on )   500 
    2 mA
    CMOS MOSFETS

    • Complementary Metal Oxide Semiconductor


    • An n-channel and a p-channel MOSFET are
    used.
    • When the input voltage is low (0 V), the
    output voltage is high.
    • When the input voltage is high (+VDD), the
    output voltage is low.
    • Low power consumption.
    CMOS MOSFETS

    Input Q1 Q2 Output
    0V On Off +VDD
    +VDD Off On 0V
    CMOS MOSFETS
    Power FETs
    • Power FETS
    – VMOS
    – TMOS
    – hexFET
    – Trench FET
    – Wave FET
    • Current Ratings of 1 A to > 200 A
    • Power Ratings of 1 W to > 500 W
    Power FETs
    • No Thermal Runaway
    – RDS(on) has a positive temperature coefficient.
    – As the temperature ↑, RDS(on) also ↑ causing ID
    to ↓ which in turn causes the temperature to ↓.
    • Can be connected in parallel
    – No current hogging occurs like in transistors.
    – If one FET conducts more current, the
    temperature ↑, RDS(on) also ↑ causing ID to ↓.
    Power FETs
    • A common application of a Power FET is
    to act as an interface between a digital
    circuit and a high power load.
    E-MOSFET Amplifiers
    • Applications include:
    • High-frequency RF Amplifiers
    • AB-Class Power Amplifiers
    E-MOSFET Amplifiers
    • Drain Current Formula
    2
    ID  k VGS  VGS ( th ) 
    where k is a constant
    ID ( on )
    k 2
    VGS ( on )  VGS ( th ) 
    E-MOSFET Amplifiers
    • Transconductance Formula

    gm  2k VGS  VGS (th) 


    E-MOSFET Amplifiers
    • Voltage Gain & Impedance
    Formulas
    E-MOSFET Amplifiers
    Solve for:
    VGS, ID, gm, vout
    Given:
    K = 104x10-3 A/V2
    ID(on) = 600 mA
    VGS(th) = 2.1 V
    E-MOSFET Amplifiers
    Solve for:
    VGS, ID, gm, vout
    R2
    Given: VG  xVDD
    K = 104x10-3 A/V2 R1  R2
    ID(on) = 600 mA
    VGS(th) = 2.1 V 1M 
    VG  x 12V
    3 M   1M 
    VG  3V VGS
    E-MOSFET Amplifiers
    Solve for:
    2
    VGS, ID, gm, vout
    ID  k VGS  VGS ( th ) 
    Given:
    K = 104x10-3 A/V2
    3V  2.1V 
    3 2
    ID(on) = 600 mA ID  104 x10
    VGS(th) = 2.1 V
    ID  84.24 mA

    VGS  3V
    E-MOSFET Amplifiers
    Solve for:
    VGS, ID, gm, vout
    Given: g m  2k VGS  VGS ( th ) 
    K = 104x10-3 A/V2
    ID(on) = 600 mA g m  2k 3V  2.1V 
    VGS(th) = 2.1 V
    g m  187.2 mS

    VGS  3V , ID  84.24 mA
    E-MOSFET Amplifiers
    Solve for:
    VGS, ID, gm, vout
    Given:
    K = 104x10-3 A/V2
    ID(on) = 600 mA
    VGS(th) = 2.1 V
    E-MOSFET Amplifiers
    Solve for:
    VGS, ID, gm, vout
    Given: AV  g m rd
    K = 104x10-3 A/V2
    ID(on) = 600 mA AV  187.2 mS 90.9  
    VGS(th) = 2.1 V
    AV  17.02
    VGS  3V , ID  84.24 mA
    g m  187.2 mS
    rd  90.9 
    E-MOSFET Amplifiers
    Solve for:
    VGS, ID, gm, vout
    Given: vout  AV vin
    K = 104x10-3 A/V2
    ID(on) = 600 mA vout  17.02 100 mV 
    VGS(th) = 2.1 V
    vout  1.702V

    VGS  3V , ID  84.24 mA
    gm  187.2 mS
    rd  90.9 , AV  17.02
    E-MOSFET Amplifiers
    Solve for:
    VGS, ID, gm, vout
    Given: VGS  3V , ID  84.24 mA
    K = 104x10-3 A/V2
    ID(on) = 600 mA gm  187.2 mS
    VGS(th) = 2.1 V
    rd  90.9  , AV  17.02
    vout  1.702V
    E-MOSFET Amplifiers
    MOSFET Testing
    • Observe ESD Precautions.
    • Due to construction, ohmmeter or DMM
    testing is not very effective.
    • A curve tracer is an effective method for
    testing a MOSFET.
    • Specialized circuits can also be used to
    test a MOSFET.

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