Alfa-MOS AFC1563

20V N & P Pair

Technology Enhancement Mode MOSFET

General Description Features

AFC1563, N & P Pair enhancement mode
N-Channel

MOSFET, uses Advanced Trench Technology 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V
voltage power management, such as smart 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V
phone and notebook computer and other
P-Channel
battery powered circuits, and low in-line power -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V
loss are needed in commercial industrial
-20V/-0.5A, RDS(ON)= 840 mΩ@ VGS =-2.5V
surface mount applications.
-20V/-0.4A, RDS(ON)= 1440 mΩ@ VGS =-1.8V

Low-Voltage Operation

High-Speed Circuits

Low Battery Voltage Operation

SOT-363 package design

Pin Description ( SOT-363 )

Application

Load Switch for Portable Devices, Smart Phones, Pagers

Pin Define
Pin Symbol Description
1 S1 Source 1
2 G1 Gate 1
3 D2 Drain 2
4 S2 Source 2
5 G2 Gate 2
6 D1 Drain1

Ordering Information
Part Ordering No. Part Marking Package Unit Quantity
AFC1563S36RG 63YW SOT-363 Tape & Reel 3000 EA

 63 parts code

 Y year code ( 0 ~ 9 )

 W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )

 AFC1563S36RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. www.alfa-mos.com
Rev.B Jan. 2011 Page 1
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Absolute Maximum Ratings

(TA=25
Unless otherwise noted)
Typical
Parameter Symbol Unit
N-Channel P-Channel
Drain-Source Voltage VDSS 20 -20 V
Gate –Source Voltage VGSS ±12 ±12 V
TA=25
1.0 -0.6
Continuous Drain Current(TJ=150
) ID A
TA=70
0.7 -0.4
Pulsed Drain Current IDM 6 -6 A
Continuous Source Current(Diode Conduction) IS 1 -1 A
TA=25
0.3
Power Dissipation PD W
TA=70
0.2
Operating Junction Temperature TJ -55/150

Storage Temperature Range TSTG -55/150

Electrical Characteristics ( N-Channel )

(TA=25
Unless otherwise noted)
Parameter Symbol Conditions Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20
V
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.4 1.0
Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA
VDS=20V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V uA
5
TJ=85

On-State Drain Current ID(on) VDS5V,VGS=4.5V 1.2 A
VGS=4.5V,ID=1.0A 220 280
Drain-Source On-Resistance RDS(on) VGS=2.5V,ID=0.8A 260 340 mΩ
VGS=1.8V,ID=0.7A 340 580
Forward Transconductance gFS VDS=10V,ID=1.0A 1 S
Diode Forward Voltage VSD IS=1.0A,VGS=0V 0.65 1.2 V
Dynamic
Input Capacitance Ciss 70
VDS=10V,VGS=0V
Output Capacitance Coss 20 pF
f=1MHz
Reverse Transfer Capacitance Crss 8
Total Gate Charge Qg 1.06 1.38
VDS=10V,VGS=4.5V
Gate-Source Charge Qgs 0.18 nC
ID≡1.2A
Gate-Drain Charge Qgd 0.32
td(on) 18 26
Turn-On Time VDD=10V,RL=20Ω
tr 20 28
ID≡1.2A,VGEN=4.5V ns
td(off) RG=1Ω 70 110
Turn-Off Time
tf 25 40

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 2
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Electrical Characteristics ( P-Channel )

(TA=25
Unless otherwise noted)
Parameter Symbol Conditions Min. Typ Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20
V
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.4 -1.0
Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA
VDS=-20V,VGS=0V -1
Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V uA
-5
TJ=85

On-State Drain Current ID(on) VDS5V,VGS=4.5V 0.7 A
VGS=-4.5V,ID=-0.6A 500 600
Drain-Source On-Resistance RDS(on) VGS=-2.5V,ID=-0.5A 700 840 mΩ
VGS=-1.8V,ID=-0.4A 1000 1440
Forward Transconductance gFS VDS=-10V,ID=-0.4A 1 S
Diode Forward Voltage VSD IS=-0.15A,VGS=0V 0.65 1.2 V
Dynamic
Input Capacitance Ciss 70 100
VDS=-10V,VGS=0V
Output Capacitance Coss 20 pF
f=1MHz
Reverse Transfer Capacitance Crss 10
Total Gate Charge Qg 1.0 1.3
VDS=-10V,VGS=-4.5V
Gate-Source Charge Qgs 0.1 nC
ID≡-0.25A
Gate-Drain Charge Qgd 0.3
td(on) 10 15
Turn-On Time VDD=-10V,RL=30Ω
tr 10 15
ID≡-0.2A,VGEN=-4.5V ns
td(off) RG=10Ω 40 60
Turn-Off Time
tf 30 50

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 3
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Typical Characteristics ( N-Channel )

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 4
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Typical Characteristics ( N-Channel )

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 5
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Typical Characteristics ( N-Channel )

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 6
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Typical Characteristics ( P-Channel )

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 7
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Typical Characteristics ( P-Channel )

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 8
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Typical Characteristics ( P-Channel )

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 9
 Alfa-MOS AFC1563
20V N & P Pair
Technology Enhancement Mode MOSFET

Package Information ( SOT-363 )

©2010 Alfa-MOS Technology Corp.

2F, No.80, Sec.1, Cheng Kung Rd., Nan Kang Dist., Taipei City 115, Taiwan (R.O.C.)
Tel : 886 2) 2651 3928
Fax : 886 2) 2786 8483
©http://www.alfa-mos.com

©Alfa-MOS Technology Corp. www.alfa-mos.com

Rev.B Jan. 2011 Page 10