2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor
Features Description
• High Density Cell Design for Low RDS(ON) These N-channel enhancement mode field effect transis-
tors are produced using ON Semiconductor's
• Voltage Controlled Small Signal Switch
proprietary, high cell density, DMOS technology. These
• Rugged and Reliable products have been designed to minimize on-state
• High Saturation Current Capability resistance while providing rugged, reliable, and fast
switching performance. They can be used in most
applications requiring up to 400 mA DC and can deliver
pulsed currents up to 2 A. These products are
particularly suited for low-voltage, low-cur-rent
applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.

D
D

S G
G
1 TO-92 SOT-23
1. Source 2. Gate 3. Drain (TO-236AB) S
2N7002/NDS7002A

Ordering Information
Min Order Qty /
Part Number Marking Package Packing Method Immediate Pack
Qty
2N7000 2N7000 TO-92 3L Bulk 10000 / 1000
2N7000-D74Z 2N7000 TO-92 3L Ammo 2000 / 2000
2N7000-D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7000-D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000
NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000

© 1998 Semiconductor Components Industries, LLC. Publication Order Number:

October-2017, Rev. 3 NDS7002A/D
 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Value
Symbol Parameter Unit
2N7000 2N7002 NDS7002A
VDSS Drain-to-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS ≤ 1 M 60 V
VGSS Gate-Source Voltage - Continuous ±20 V
Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40
ID Maximum Drain Current - Continuous 200 115 280 mA
Maximum Drain Current - Pulsed 500 800 1500
PD Maximum Power Dissipation Derated above 25°C 400 200 300 mW
3.2 1.6 2.4 mW/°C
TJ, TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
TL Maximum Lead Temperature for Soldering Purposes,
300 °C
1/16-inch from Case for 10 Seconds

Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.

Value
Symbol Parameter Unit
2N7000 2N7002 NDS7002A
RJA Thermal Resistance, Junction to Ambient 312.5 625 417 °C/W

Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.

Symbol Parameter Conditions Type Min. Typ. Max. Unit

Off Characteristics
Drain-Source Breakdown
BVDSS VGS = 0 V, ID = 10 A All 60 V
Voltage
IDSS Zero Gate Voltage Drain VDS = 48 V, VGS = 0 V 2N7000 1 A
Current VDS = 48 V, VGS = 0 V, 1
mA
TC = 125°C
VDS = 60 V, VGS = 0 V 2N7002 1 A
VDS = 60 V, VGS = 0 V, NDS7002A 0.5
mA
TC = 125°C
IGSSF Gate - Body Leakage, VGS = 15 V, VDS = 0 V 2N7000
10 nA
Forward
VGS = 20 V, VDS = 0 V 2N7002
100 nA
NDS7002A
IGSSR Gate - Body Leakage, VGS = -15 V, VDS = 0 V 2N7000
-10 nA
Reverse
VGS = -20 V, VDS = 0 V 2N7002
-100 nA
NDS7002A

www.onsemi.com
2
 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (Continued)
Symbol Parameter Conditions Type Min. Typ. Max. Unit
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V
2N7002
VDS = VGS, ID = 250 A 1 2.1 2.5
NDS7002A
RDS(ON) Static Drain-Source VGS = 10 V, 2N7000 
1.2 5
On-Resistance ID = 500 mA
VGS = 10 V,
1.9 9
ID = 500 mA, TC = 125°C
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V, 2N7002
1.2 7.5
ID = 500 mA
VGS = 10 V,
1.7 13.5
ID = 500 mA, TC = 100°C
VGS = 5 V,
1.7 7.5
ID = 50 mA
VGS = 5 V,
2.4 13.5
ID = 50 mA, TC = 100°C
VGS = 10 V, NDS7002A
1.2 2
ID = 500 mA
VGS = 10 V,
2 3.5
ID = 500 mA, TC = 125°C
VGS = 5 V,
1.7 3
ID = 50 mA
VGS = 5 V,
2.8 5
ID = 50 mA, TC = 125°C
VDS(ON) Drain-Source On-Voltage VGS = 10 V, 2N7000 V
0.6 2.5
ID = 500 mA
VGS = 4.5 V,
0.14 0.4
ID = 75 mA
VGS = 10 V, 2N7002 0.6 3.75
ID = 500 mA
VGS = 5.0 V,
0.09 1.5
ID = 50 mA
VGS = 10 V, NDS7002A 0.6 1
ID = 500 mA
VGS = 5.0 V,
0.09 0.15
ID = 50 mA
ID(ON) On-State Drain Current VGS = 4.5 V, 2N7000 mA
75 600
VDS = 10 V
VGS = 10 V, 2N7002
500 2700
VDS  2 VDS(on)
VGS = 10 V, NDS7002A
500 2700
VDS  2 VDS(on)
gFS Forward VDS= 10 V, 2N7000 mS
100 320
Transconductance ID = 200 mA
VDS 2VDS(ON), 2N7002
80 320
ID = 200 mA
VDS 2VDS(ON), NDS7002A
80 320
ID = 200 mA

www.onsemi.com
3
 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (Continued)
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, All 20 50 pF
Coss Output Capacitance f = 1.0 MHz All 11 25
Crss Reverse Transfer
All 4 5
Capacitance
ton Turn-On Time VDD = 15 V, RL = 25 , 2N7000 ns
ID = 500 mA, 10
VGS= 10 V, RGEN = 25
VDD = 30 V, RL = 150 , 2N7002
ID = 200 mA, VGS= 10 V, NDS7002A 20
RGEN = 25
toff Turn-Off Time VDD = 15 V, RL = 25 , 2N7000 ns
ID = 500 mA, VGS= 10 V, 10
RGEN = 25
VDD = 30 V, RL = 150 , 2N7002
ID = 200 mA, VGS= 10 V, NDS7002A 20
RGEN = 25
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward 2N7002 115 mA
Current NDS7002A 280
ISM Maximum Pulsed Drain-Source Diode Forward 2N7002 0.8 A
Current NDS7002A 1.5
VSD Drain-Source Diode VGS = 0 V, 2N7002 V
Forward Voltage 0.88 1.5
IS = 115 mA(1)
VGS = 0 V, NDS7002A
0.88 1.2
IS = 400 mA(1)
Note:
1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %.

www.onsemi.com
4
 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
2N7000 / 2N7002 / NDS7002A

2 3
VGS = 10V 9.0 V GS =4.0V

DRAIN-SOURCE ON-RESISTANCE
8.0 4 .5
, DRAIN-SOURCE CURRENT (A)

7.0 2 .5 5 .0

RDS(on) , NORMALIZED
1 .5
6 .0
6.0 2
7 .0
1

5.0 1 .5 8 .0
9 .0
10
0 .5
4.0 1
D
I

3.0
0 0 .5
0 1 2 3 4 5 0 0 .4 0 .8 1 .2 1 .6 2
V DS , DRAIN-SOURCE VOLTAGE (V I D , DRA IN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

2 3
DRAIN-SOURCE ON-RESISTANCE

DRAIN-SOURCE ON-RESISTANCE

V GS = 10V V GS
1.75 I D = 500m A 2 .5
RDS(on) , NORMALIZED

RDS(on) , NORMALIZED

TJ = 1 2 5 ° C
1.5 2

1.25 1 .5
25°C
1 1
-55°C
0.75 0 .5

0.5 0
-5 0 -2 5 0 25 50 75 100 125 150 0 0 .4 0 .8 1 .2 1 .6 2
TJ , JUNCTION T EMPERATURE (°C) I D , DRAIN CURRENT (A)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain

with Temperature Current and Temperature

2 1 .1
T J = -55°C
*$7(6285&(7+5(6+2/'92/7$*(

VDS = 109 25°C V DS = VGS

125°C 1 .0 5
1.6 I D = 1 mA
,'5$,1&855(17$

WK91250$/,=('
Vth , N250$/,=(D

1
1.2

0 .9 5

0.8
0 .9
D

0.4
0 .8 5

0 0 .8
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
V , GATE TO SOURCE VOLTAGE (V TJ , JUNCTION TEM PERATURE (°C)
GS

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

www.onsemi.com
5
 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics (Continued)
2N7000 / 2N7002 / NDS7002A

1.1 2
V GS 9
I D = 250µA 1
DRAIN-SOURCE BREAKDOWN VOLTAGE

1.075
0 .5

IS , REVERSE DRAIN CURRENT (A)

1.05
TJ = 1 2 5 ° C
BV'66  NORMALIZED

1.025 0 .1
25°C
0 .0 5
-5 5 ° C
1

0.975 0 .0 1

0 .0 0 5
0.95

0.925
-50 -25 0 25 50 75 100 125 150 0 .0 0 1
0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4
TJ , JUNCTION TEM PERATURE (°C)
V SD , BODY DIODE FORW A RD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation Figure 8. Body Diode Forward Voltage Variation with
with Temperature

60 10

40
V DS = 2 5 V

VGS , GA E-SOURCE VOLTAGE (V)

C iss
8
20
CAPACITANCE (pF)

C oss
6
10
ID = 5 0 0 m A

5 4
C rss

f = 1 MHz 2 280m A
2
V GS = 0V 0 .8 1 .2
115m A Q g , *ATE CHARGE (nC)
1 0
1 2 3 5 10 20 30 50 0 0 .4 0 .  . 1 .6 2
VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

VDD t on t off
t d(on) tr t d(off) tf
V IN RL 90% 90%

D V OUT Output, Vout

10% 10%
VGS Inverted
R GEN DUT
90%
G
Input, Vin 50% 50%

10%
S
Pulse Width

Figure 11.6ZLWFKLQJ7HVW&LUFXLW Figure 12. Switching Waveforms

www.onsemi.com
6
 2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics (Continued)



 

X
  V
LW 
/ LP X  LW P

,'5$,1&855(17$
 1 V
,'5$,1&855(17$

 /LP V
62 1
5' 62
P 5'
V
 
PV PV
  
P
V 
 V  P
V
*6 9
9      9
9*6
V V

'
6,1*/(38/6(
'

 '& 
6,1*/(38/6(  '& V
7 
$  &
  7   &
$

 
               
 9'6
'5$,16285&(92/7$*(9
 9 '6
9 '5$,16285&(92/7$*(

Figure 13. 2N7000 Maximum Figure 14. 2N7002 Maximum

Safe Operating Area Safe Operating Area


 LW
 /LP 
1 X
 62 V
5' P
V

,'5$,1&855(17$


PV


P
 V
9 
*6  
V

6,1*/(38/6(  '& V
'

7 
$  &



       
9 '6
9 '5$,16285&(92/7$*(9

Figure 15. NDS7000A Maximum

Safe Operating Area

1
r(t), NORMALIZED EFFECTIVETRANSIENT

0.5 '  

THERMAL RESISTANCE

RQ-$ W  UW 5Q-$

0.2   
5Q- $= (See Datasheet)


0.1 3SN

0.05 W

W 
 

 TJ - TA = P * 5Q-$ (t)

0.02 6LQJOH3XOVH
,D uty Cy cle' W  W 

0.01
0.0001 0.001 0.01 0.1 1 10 100 300
t 1, TIME (sec)
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
1
r(t), NORMALIZED EFFECTIVETRANSIENT

0.5 ' 

0.2   
RQ-$ W  UW 5Q-$
THERMAL RESISTANCE

0.1 
5Q-$= (See Datasheet)
0.05    

    P(pk)
   
0.01 t1
t2
6LQJOH3XOVH
TJ - TA = P * 5Q-$ (t)
,D uty Cy cle' W  W 
0.002
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
R
t1 , TIME (sec)

Figure 1. 62711'6$7UDQVLHQW7KHUPDO5HVSRQVH&XUYH

www.onsemi.com
7
 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

❖ © Semiconductor Components Industries, LLC www.onsemi.com