2N7002

N-Channel Enhancement-Mode
Vertical DMOS FETs

Ordering Information
BVDSS / RDS(ON) ID(ON) Order Number / Package Product marking for TO-236AB:
BVDGS (max) (min) TO-236AB* 702❋
60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Features Advanced DMOS Technology

Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
Low power drive requirement
manufacturing process. This combination produces devices with
Ease of paralleling the power handling capabilities of bipolar transistors and with the
Low CISS and fast switching speeds high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
Excellent thermal stability devices are free from thermal runaway and thermally-induced
Integral Source-Drain diode secondary breakdown.

High input impedance and high gain Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
Complementary N- and P-channel devices voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.

Applications
Motor controls Package Options
Converters
Amplifiers
Switches
Power supply circuits
Driver (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.) Drain

Absolute Maximum Ratings

Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate Source
Gate-to-Source Voltage ± 30V
TO-236AB
Operating and Storage Temperature -55°C to +150°C
(SOT-23)
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds. top view

Note: See Package Outline section for dimensions.

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 2N7002

Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR* IDRM
@ TA = 25°C °C/W °C/W
TO-236AB 115mA 800mA 0.36W 200 350 115mA 800mA
* ID (continuous) is limited by max rated Tj.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 V ID = 10µA, VGS = 0V
VGS(th) Gate Threshold Voltage 1.0 2.5 V VGS = VDS, ID = 250µA
∆V GS(th) Change in VGS(th) with Temperature -5.5 mV/°C ID = 250µA, VGS = VDS
IGSS Gate Body Leakage ±100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 1 µA VGS = 0V, VDS = Max Rating
500 µA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 500 mA VGS = 10V, VDS = 25V
RDS(ON) Static Drain-to-Source 7.5 Ω VGS = 5V, ID = 50mA
ON-State Resistance
7.5 Ω VGS = 10V, ID = 0.5A
∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS = 10V, ID = 0.5A
Ω
GFS Forward Transconductance 80 m VDS = 25V, ID = 0.5A
CISS Input Capacitance 50
COSS Common Source Output Capacitance 25 pF VGS = 0V, VDS = 25V, f = 1MHz
CRSS Reverse Transfer Capacitance 5
t(ON) Turn-ON Time 20 ns VDD = 30V, ID = 0.2A,
t(OFF) Turn-OFF Time 20 RGEN = 25Ω

VSD Diode Forward Voltage Drop 1.2 V ISD = 0.2A, VGS = 0V

trr Reverse Recovery Time 400 ns ISD = 0.8A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

VDD

10V RL
90% PULSE
INPUT GENERATOR
OUTPUT
0V 10%
Rgen
t(ON) t(OFF)

td(ON) tr td(OFF) tF
D.U.T.
VDD INPUT
10% 10%
OUTPUT
0V 90% 90%

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 2N7002

Typical Performance Curves

Output Characteristics Saturation Characteristics
2.0 2.0

VGS =
10V VGS =
1.6 1.6 10V

9V 9V
ID (amperes)

1.2 1.2

ID(amperes)
8V 8V

0.8 0.8
7V 7V
6V
0.4 0.4
6V
5V 5V
4V
4V
0 3V 0 3V
0 10 20 30 40 50 0 2 4 6 8 10
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Temperature

0.5 0.5

VDS = 25V
0.4 0.4
GFS (siemens)

TA = -55°C SOT-23
0.3 0.3
PD (watts)

25°C
0.2 0.2
125°C

0.1 0.1

0 0
0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150
ID (amperes) TA(°C)

Maximum Rated Safe Operating Area Thermal Response Characteristics

1.0 1.0
SOT-23 (pulsed)
Thermal Resistance (normalized)

0.8
SOT-23 (DC)
0.1
ID (amperes)

0.6

0.4
0.01

SOT-23
0.2
TA = 25°C TA = 25°C
PD = 0.36W
0.001
0
0.1 1 10 100 0.001 0.01 0.1 1.0 10
VDS (volts) tp (seconds)

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 2N7002

Typical Performance Curves

BVDSS Variation with Temperature On-Resistance vs. Drain Current
1.1 10

VGS = 5V
8
BVDSS (normalized)

RDS(ON) (ohms)
VGS = 10V
6

1.0

0.9 0
-50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5
Tj (°C) ID (amperes)

Transfer Characteristics VGS(th) and RDS(ON) Variation with Temperature

2.0 2.0

VDS = 25V 1.4

RDS(ON) @ 10V, 0.5A
1.6 1.6
TA = -55°C

RDS(ON) (normalized)
VGS(th) (normalized)

1.2
ID (amperes)

1.2 1.2

25°C 1.0

0.8 0.8
VGS(th) @ 1mA
0.8
125°C
0.4 0.4

0.6

0 0
0 2 4 6 8 10 -50 0 50 100 150
VGS (volts) Tj (°C)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

50 10
f = 1MHz
VDS = 10V
8

90 pF
C (picofarads)

CISS
VGS (volts)

25

COSS

2
30 pF VDS = 40V
CRSS
0 0
0 10 20 30 40 0 0.2 0.4 0.6 0.8 1.0
VDS (volts) QG (nanocoulombs)

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