Vlsi Lab Manual 2010
Vlsi Lab Manual 2010
Vlsi Lab Manual 2010
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INDEX
I. II. VLSI DESIGN FLOW AND THE TOOLS USED IN CADENCE PART A: Digital Simulation PROCEDURE FOR CREATING DIGITAL SIMULATION USING VERILOG AND CADENCE DIGITAL TOOL. Experiment1: Inverter Experiment2: Buffer Experiment3: Transmission Gates(TG) Experiment4: Logic Gates AND,OR,NAND,NOR,XOR,XNOR Experiment5: Flip Flops JK,MS,SR,D,T Experiment6: Synchronous Counter Experiment7: Asynchronous Counter Experiment8: Parallel Adder Experiment 9: Serial Adder PART B: Analog Design
III.
PART B[1] : Schematic Simulation PROCEDURE FOR CREATING THE SCHEMATIC SIMULATION Experiment 1(a): Experiment 2(a): Experiment 3(a): Experiment 4(a): Experiment 5(a): Experiment 6(a): Inverter Schematic and test Cell View Common Source Amplifier Schematic and test Cell View Common Drain Amplifier Schematic and test Cell View Differential Amplifier Schematic and test Cell View Operational Amplifier Schematic and test Cell View R-2R DAC Schematic and test Cell View
IV.
VLSI LAB MANUAL 2010 1) VLSI DESIGN FLOW AND TOOLS USED IN CADENCE
PDK stands for Process Design Kit. A PDK contains the process technology and needed information to do device-level design in the Cadence DFII environment.
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PART - A
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Experiment1: Inverter
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`noview 13 Bangalore
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VLSI LAB MANUAL 2010 Experiment 4: LOGIC GATES 4.1 NAND GATE
4.4 OR GATE
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Verilog Code SR FF
module sr_ff(s,r, q,qb); input s,r; output reg q,qb; reg st = 1'b0; reg [1:0] k; always@(s|r) begin k = {s,r}; case(k) 2'b00 : st = st; 2'b01 : st = 1'b0; 2'b10 : st = 1'b1; 2'b11 : st = 1'bz; default: ; endcase q = st; qb = ~q; end endmodule
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Cin 0 0 1 1
A3 1 0 1 0
A2 0 1 0 0
A1 0 1 0 0
A0 1 1 1 1
B3 1 0 1 0
B2 0 0 0 0
B1 0 0 0 1
B0 1 1 0 1
Cout 1 0 1 0
S3 0 1 0 1
S2 0 0 0 1
S1 1 0 0 1
S0 0 0 1 0
Note:
Simulation and synthesis of parallel adder uses a full adder in its module . Therefore, In simulation process it is necessary to compile full adder verilog file and parallel adder with test bench. In synthesis it is necessary to read_hdl file of full adder as well as parallel adder
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Note:
Simulation and synthesis of serial adder uses a shift register in its module. Therefore, In simulation of Serial adder It is necessary to compile shift register verilog file and serial adder with test bench. In Synthesis of Serial adder it is necessary to read_hdl file for shift register as well as serial adder.
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PART B
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i) Procedure for Creating New Library. a. File New Library b. Name : Give name for ur library Ex: VLSILAB c. Enable Attach to an existing technology library, Click OK d. Attach the library to the technology library gpdk180.Click OK ii) Create Schematic Cell view. a. Go to 1st window i.e virtuoso(CIW) b. File-New-Cell view c. Setup the new file form Library: Select the one you a created. Cell : Give the experiment name Ex: Inverter View: Schematic Type: Schematic press OK 44 Bangalore
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Specifications:
Specifications: Vpulse V1 = 0 V2 = 1
Vdd
= 1.8
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DC Analysis
Specifications:
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Setup for D.C analysis 3. Component to be selected in schematic is Vsin for d.c analysis 4. Start = -5 Stop = 5 resp. Setup for A.C analysis 4. Turn on Frequency button 5. In sweep range section Start 7 stop 150 to 100M 6. Select point per decade = 20 Check enables and apply
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DC Analysis
AC Analysis- Frequency
Specifications:
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Simulation Settings Setup for transient analysis: 1. Stop time = 5m Setup for D.C analysis 1. Component to be selected in schematic is Vsin for d.c analysis 2. Start = -5 Stop = 5 resp. Setup for A.C analysis 1. Turn on Frequency button 2. In sweep range section Start 7 stop 150 to 100M 3. Select point per decade = 20 Check enables and apply
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DC Analysis
AC Analysis- Frequency
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VLSI LAB MANUAL 2010 Experiment 4(a): Differential Amplifier schematic Cell view
Specifications:
NM0&NM1 W=3u L=1U , NM2,NM3 4.5U L=1U PM0 & PM1 W=15U L=1U V1,V2,Idc Vout Vdd,Vss
Vdd Vss
= 2.5 = -2.5
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Expected Waveform:
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VLSI LAB MANUAL 2010 Experiment 5(a) : OPAMP schematic Cell view
\ Specifications: Diff_Amplifier Cs_amplifier Input Pins Output pin From your library From your library Vinv,Vnoninv,Id.c,Vdd,Vss Vout
Specifications: Vsin
=1 =0 =0 =5m =1K
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Expected Waveform:
Table for component building: Lib Name Cell Name gpdk180 polymer analog lib Idc,gnd My.Library op-amp
D0,D1,D2,D3 Input pins Vout-output pin Vdd and Gnd Input pins
Properties V0: V1=0V V2=2 V1: V1=0V V2=2 V2: V1=0V V2=2 V3: V1=0V V2=2 Vdd=2 Vss=-2 symbol
Total period(T)=10n Pulse width(Ton)=5n Total period(T)=20n Pulse width(Ton)=10n Total period(T)=40n Pulse width(Ton)=20n Total period(T)=80n Pulse width(Ton)=40n
Simulation Settings
Setup for transient analysis: 5. Stop time = Setup for D.C analysis 9. Component to be selected in schematic is_______for d.c analysis 10. Start = -5 Stop = 5 resp. Setup for A.C analysis 13. Turn on Frequency button 14. In sweep range section Start ____ stop ______ 15. Select point per decade = _____ Check enables and apply
Output Waveform:
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Some of the important design rules mentioned above are pictorially represented in next page.
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OXIDE RULE
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Poly RULE
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The PMOS is designed with respect to the design rules mentioned. The PMOS is designed with a respect to the W/L ratio. W L Width of channel Nimp Width of POLY1
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set the cell Name: Inverter ( Same as Schematic ) View Name : Layout and click OK. A LSW [ Layout schematic window] & blank Layout window opens. 4. In Layout window, Execute Connectivity Generate All from source. In the layout editor window, A Generate Layout form appears. In this form enable Labels options & Click OK. 5. Now, we can view the components and Area of silicon [boundary]. The Area defines that the required layout can be fitted in to that. There for try to restrict to this area. NOTE: As a beginner extend the height of area by maximum of 2 units.
6. Stretch the area by using stretch Key from edit window.
7. Move the components in to specified area and arrange them at required positions properly.
8. Press shift F to observe the internal view of the NMOS & PMOS. 9. Now Zoom the layout editor window and align the NMOS & PMOS exactly. [That is poly
of both MOS must match to avoid the DRC errors]. 10. Make the required connections by selecting the required material from LSW window like poly, metal then create the required shapes by executing Create Shape Path / Rectangle 11. Once the required connection are made, the next step is to connect the required overlapping materials by using corresponding connectors (via)s 71 Bangalore
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i)
The DRC form opens Check: ii) Library: ? Cell: ? View: ? [Layout].
This should be same what you have set iii) Technology gpdk 180. Then click OK. iv) v) A progress form appears.[Dont click on OK] When DRC finishes, a dialog box appears asking you if you want to view your DRC results, and then click yes to view the results of this form.
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If any DRC errors exist, a Error Layer window [ELW] appears. Open ELW window and rectify the errors by selecting the errors one by one. Then follow step (i) to (v) mentioned above unit you get a message as No DRC errors found then clck on close to terminate the DRC run.
B) Running LVS( Layout Vs Schematics) . i) ii) Assura LVS in Layout window A Assura Run LVS window opens. Check: Schematic Design Source Lib: Cell: View:
These should be have Schematic & Layout to be compared CLICK OK. The LVS begins and progress. Form appears. If schematic & Layout matches completely, you will get the form displaying Schematic and Layout Match If Not matching, a form informs LVS completed successfully and asks if you want view the results of this run. CLICK Yes in the form.
v)
The LVS debug form opens indicating the mismatches and you need to correct all these mismatches and Re run the LVS.
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Now you can conclude how much delay is introduced by parasites by comparing delay with and without parasites and based on this we need to optimize the parasitic effect and reduce the delay due to parasites. This finally leads to an optimized layout
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LSW What is LSW? It is a layout Vs Schematic window which consists of different layers used for layout. The layers to drawn or traced has to be selected from the LSW window and the required type of shape has to be created by using the Create Shape Select the required shapes. The Shapes may be a Rectangle, Circle, Path so on. Rectangle: This shape is chosen when the shape to be drawn is rectangular and but the size is not defined. Path: This shape is chosen when the path to be drawn is with predefined with. The drawn shapes must follow the design rules.
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4) VLSI Questions
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Why dont we use just one NMOS or PMOS transistor as a transmission gate? Because we can't get full voltage swing with only NMOS or PMOS .We have to use both of them together for that purpose. Why dont we use just one NMOS or PMOS transistor as a transmission gate? nmos passes a good 0 and a degraded 1 , whereas pmos passes a good 1 and bad 0. for pass transistor, both voltage levels need to be passed and hence both nmos and pmos need to be used. What are set up time & hold time constraints? What do they signify? Setup time: Time before the active clock edge of the flip-flop, the input should be stable. If the signal changes state during this interval, the output of that flip-flop cannot be predictable (called metastable). Hold Time: The after the active clock edge of the flip-flop, the input should be stable. If the signal changes during this interval, the output of that flip-flop cannot be predictable (called metastable).
Explain Clock Skew?
clock skew is the time difference between the arrival of active clock edge to different flip-flops of the same chip. Why is not NAND gate preferred over NOR gate for fabrication? NAND is a better gate for design than NOR because at the transistor level the mobility of electrons is normally three times that of holes compared to NOR and thus the NAND is a faster gate. Additionally, the gate-leakage in NAND structures is much lower. What is Body Effect? In general multiple MOS devices are made on a common substrate. As a result, the substrate voltage of all devices is normally equal. However while connecting the devices serially this may result in an increase in source-to-substrate voltage as we proceed vertically along the series chain (Vsb1=0, Vsb2 0).Which results Vth2>Vth1. Why is the substrate in NMOS connected to Ground and in PMOS to VDD? we try to reverse bias not the channel and the substrate but we try to maintain the drain, source junctions reverse biased with respect to the substrate so that we dont loose our current into the substrate. What is the fundamental difference between a MOSFET and BJT ? In MOSFET, current flow is either due to electrons(n-channel MOS) or due to holes(p-channel MOS) In BJT, we see current due to both the carriers.. electrons and holes. BJT is a current controlled device and MOSFET is a voltage controlled device In CMOS technology, in digital design, why do we design the size of pmos to be higher than the nmos. What determines the size of pmos wrt nmos. Though this is a simple question try to list all the reasons possible? In PMOS the carriers are holes whose mobility is less[ aprrox half ] than the electrons, the carriers in NMOS. That means PMOS is slower than an NMOS. In CMOS technology, nmos helps in pulling down the output to ground PMOS helps in pulling up the output to Vdd. If the sizes of PMOS and NMOS are the same, then PMOS takes long time to charge up the output node. If we have a larger PMOS than there will be more carriers to charge the node quickly and overcome the slow nature of PMOS . Basically we do all this to get equal rise and fall times for the output node. Why PMOS and NMOS are sized equally in a Transmission Gates?
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FPGA vs ASIC
Definitions FPGA: A Field-Programmable Gate Array (FPGA) is a semiconductor device containing programmable logic components called "logic blocks", and programmable interconnects. Logic blocks can be programmed to perform the function of basic logic gates such as AND, and XOR, or more complex combinational functions such as decoders or mathematical functions.
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Type of Design ASIC can have mixed-signal designs, or only analog designs. But it is not possible to design those using FPGA chips.
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