(BISS) Transistors
(BISS) Transistors
(BISS) Transistors
Automotive
Simplifying design through increased functionality By delivering more functionality from individual products, we help to cut development times. With just a few small-signal discretes several circuit blocks can be build and therewith the number of different components on the bill-of-materials can be reduced signicantly. Our small-signal discretes portfolio offers power and performance levels previously only associated with much larger packages allowing you to replace medium-power products with more compact alternatives. And because you can now get high-performance transistors and diodes in low-cost small-signal packages, you can signicantly cut costs. Whether its superior ESD protection or loadswitch functionality integrated into a single component, our portfolio makes it easier to design a new system.
All our new products are released in the well-known SOT23 package, as well as in smaller packages like SOT323 (SC-70), SOD323 (SC-76) and SOD323F (SC-90). To support the trend towards integration also multiple transistors and diodes are available integrated into just a single package like SOT457 (SC-74) and SOT363 (SC-88). Philips has all the technologies in place to lead the way in small-signal discretes products, allowing to develop automotive applications that will drive the future.
Key families - Low VCEsat (BISS) transistors - Resistor-equipped transistors (RETs) - Complex discretes BISS Loadswitches Matched pair transistors MOSFET drivers - Low VF (MEGA) Schottky rectiers - ESD protection diodes Key benets - More power - Lower costs - More functionality - Improved reliability - Automotive packages
VCC
CONTROLLER
MSD923
DC/DC converter
Key applications - Applications where heat is a concern (e.g. engine- or dashboard mounted components) - High and low side switches, e.g. in control units - Drivers in low supply voltage applications, e.g. fans, motors - Inductive load drivers, e.g. relays, buzzers - MOSFET drivers
Less heat generation with BISS transistors SOT223: IC = 1.55 A; IB = 0.1 A; PCB FR4 + 1 cm2 Cu
BCP51, Tj = 130C
PBSS9110Z, Tj = 103C
SOT223 (SC-73)
PBSS5540Z, Tj = 45C
SOT23 SOT457 (SC-74)
Ptot 2000 mW IC (A) VCEO (V) 30 1.0 40 60 100 30 2.0 40 50 20 30 3.0 50 60 80 100 4.0 5.0 40 80 20 PBSS4540Z PBSS5540Z PBSS4350Z PBSS5350Z PBSS8110Z PBSS9110Z NPN PNP
Ptot 480 mW PNP PBSS5130T PBSS5140T PBSS5160T PBSS9110T PBSS5230T PBSS5240T PBSS5350T NPN PBSS4130T PBSS4140T PBSS4160T PBSS8110T PBSS4230T PBSS4240T
PBSS4240DPN (NPN/PNP)
PBSS4350T
PBSS4440D
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Key applications - Digital applications - Switching loads, e.g. for instrument clusters - Controlling IC inputs, e.g. in engine control units
500 mA RETs
R2 (k) 1 2.2 10 10
100 mA RETs
SOT23
SOT323 (SC-70)
Conguration IC max. (mA) VCEO max. (V) R1 (k) R2 (k) 2.2 R1 = R2 4.7 10 22 47 100 2.2 2.2 4.7 R1 R2 100 50 4.7 10 22 47 47 2.2 Only R1 4.7 10 22 47 100 2.2 4.7 10 22 47 100 10 47 10 47 47 47 10 22 NPN PDTC123ET PDTC143ET PDTC114ET PDTC124ET PDTC144ET PDTC115ET PDTC123YT PDTC123JT PDTC143XT PDTC143ZT PDTC114YT PDTC124XT PDTC144VT PDTC144WT PDTC123TT PDTC143TT PDTC114TT PDTC124TT PDTC144TT PDTC115TT PNP PDTA123ET PDTA143ET PDTA114ET PDTA124ET PDTA144ET PDTA115ET PDTA123YT PDTA123JT PDTA143XT PDTA143ZT PDTA114YT PDTA124XT PDTA144VT
single NPN PDTC123EU PDTC143EU PDTC114EU PDTC124EU PDTC144EU PDTC115EU PDTC123YU PDTC123JU PDTC143XU PDTC143ZU PDTC114YU PDTC124XU PDTC144VU PDTC144WU PDTC123TU PDTC143TU PDTC114TU PDTC124TU PDTC144TU PDTC115TU PNP PDTA123EU PDTA143EU PDTA114EU PDTA124EU PDTA144EU PDTA115EU PDTA123YU PDTA123JU PDTA143XU PDTA143ZU PDTA114YU PDTA124XU PDTA144VU PDTA144WU PDTA123TU PDTA143TU PDTA114TU PDTA124TU PDTA144TU PDTA115TU PUMH17 PUMH30 PUMH7 PUMH4 PUMH19 PUMH14 PUMH10 PUMH18 PUMH13 PUMH9 PUMH16 NPN/NPN PUMH20 PUMH15 PUMH11 PUMH1 PUMH2 PUMH24
double NPN/PNP PUMD20 PUMD15 PUMD3 PUMD2 PUMD12 PUMD24 PUMD10 PUMD18 PUMD13 PUMD9 PUMD16 PUMD17 PUMD30 PUMD6 PUMD4 PUMD19 PUMD14 PNP/PNP PUMB20 PUMB15 PUMB11 PUMB1 PUMB2 PUMB24 PUMB10 PUMB18 PUMB13 PUMB9 PUMB16 PUMB17 PUMB30 PUMB3 PUMB4 PUMB19 PUMB14
BISS Loadswitches
Power supply
Load
Combining a BISS transistor with a RET, BISS Loadswitches provide full miniature loadswitch functionality in a single package and deliver best-in-class performance.
Control input
R1
Tr2 (RET)
Key features - BISS transistor and RET in one package - Low threshold voltage (< 1 V) compared to MOSFET - Small drive power required - Best-in-class performance for loadswitches - Available for switching loads of 0.5 1 A
Key benets - Integrated on-the-shelve solution for switching loads Saves design and sourcing costs Reduction in boardspace requirements Just one or two external resistors needed for full loadswitch capability - Combination of low voltage drop and low base drive current BISS transistor in the power path provides the lowest energy-losses RET in the control path provides a low base drive current
MSE336 GND
Loadswitch
Key applications - Supply line switches, e.g. in control units - Control of lamps, motors and switches, e.g. instrument clusters - High side switches for drivers
SOT457 (SC-74)
SOT363 (SC-88)
IC (A)
VCEO (V)
R1 = R2 (k) 2.2 4.7 PBLS4001Y PBLS4002Y PBLS4003Y PBLS4004Y PBLS4005Y PBLS4001D PBLS4002D PBLS4003D PBLS4004D PBLS4005D PBLS6001D PBLS6002D PBLS6003D PBLS6004D PBLS6005D
0.5
40
350
10 22 47 2.2 4.7
40
170
10 22 47 2.2 4.7
1.0
60
180
10 22 47
Vin
Rsense
Vout
Vsense
Key applications - Current mirror e.g. for current measurement or to drive LEDs with a constant current - Differential amplier e.g. sensor signal amplication - Comparator e.g. for DC/DC converters
SOT143B
Ptot max. Polarity IC (mA) VCEO (V) 30 NPN 100 hFE min. 110 hFE max. 800 hFE1/hFE2 0.7 0.9 45 200 450 0.9 0.95 0.98 30 PNP 100 110 800 0.7 0.9 45 200 450 0.9 0.95 0.98 VBE1 - VBE2 (mV) n.a. 2 2 2 2 n.a. 2 2 2 2
380 mW
300 mW
300 mW
MOSFET drivers
Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET driving functionality. With a choice of congurations Philips offers solutions to take load from the driving circuit, improve the efciency of the MOSFET and enable design exibility.
Key features - Complete MOSFET driving functionality in one package - Several congurations available
Key benets - Improved MOSFET efciency by Minimizing rise and fall time Fast gate (dis-)charge of the driven MOSFET - Takes load from the driving circuit and thus minimizes the IC power dissipation - More design exibility: the control IC and the MOSFET do not have to be placed as close as possible anymore - Cost-effective alternative to IC-solutions
Key applications - MOSFET driver - Bipolar power transistor driver - Push-pull driver
SOT457 (SC-74)
SOT346 (SC-59A)
SOT457 (SC-74)
SOT457 (SC-74)
3
D1
3
2
3
Rext
2, 3
Tr1
2
D1
Tr1
2
D1
Tr1
R1
4, 5
D1
Tr2
1 6
Tr1
Tr2
5
Tr3
1 3
Tr1 R2
1
Tr2
4
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1
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1
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5, 6
2
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600 mW PMD9050D
250 mW PMD4001K (NPN) PMD5001K (PNP) 2.2 4.7 10 PMD4002K (NPN) PMD5002K (PNP) PMD4003K (NPN) PMD5003K (PNP)
600 mW
0.2
Switching transistors reduced storage time Low VCEsat (BISS) transistors Low VCEsat, high hFE and IC
0.6 1.0
1.2 2.0
SOT457 (SC-74)
SOT23
SOD123F
SOD323F (SC-90)
IR max. (A) @ IF max. (A) 0.5 VR max. (V) 20 30 40 20 30 30 40 60 1.5 20 30 10 2 3 20 30 10 IFSM (A) 6 10 10 9 10 9 1 10 10 10 10 17.5 9 9 9 9 9 9 VF max. (mV) 390 430 470 500 550 430 560 520 640 660 650 660 550 460 525 620 530 VF max. 200 150 100 200 70 200 150 50 100 50 350 70 1000 3000 200 1000 3000 PMEG6010AED PMEG2015EH PMEG3015EH PMEG1020EH PMEG2020EH PMEG3020EH PMEG1030EH PMEG2015EJ PMEG3015EJ PMEG1020EJ PMEG2020EJ PMEG3020EJ PMEG1030EJ PMEG4010EH PMEH2010AEH PMEG3010EH PMEG3010EJ PMEG3010CEJ PMEG4010EJ PMEG6010CEJ PMEG2005ET PMEG3005ET PMEG4005ET PMEG2005EH PMEG3005EH PMEG4005EH PMEG2010EH PMEG2005EJ PMEG3005EJ PMEG4005EJ PMEG2010EJ PMEG2010AEJ
Number of lines
SOT23
SOD323 (SC-76)
uniConguration
15 V 1 24 V 2
bidirectional 1
IRM max. @ VRWM A 0.05 V 15 13 0.05 24 160 PESD1LIN C max. pF PPP max. W
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2 2
3
24 5 12 24 5.25 12 24 5 12 24
17 200 75 50 200 75 50 65 13 9
200 260 180 160 260 180 160 500 200 200
PESD1CAN PESD5V0S2UAT PESD12VS2UAT PESD24VS2UAT PESD5V2S2UT PESD12VS2UT PESD24VS2UT PESD5V0L1BA PESD12VL1BA PESD24VL1BA
2
mse213
1 1 1 1 1 1 1
2 2 2
2
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1
2 2
mse212
1
mse211
1 1
10
PESD1LIN and PESD1CAN Also specic automotive devices are available; with the PESD1LIN Philips offers the best-in-class ESD protection of one LIN bus line. The asymmetrical diode conguration ensures optimized electromagnetic immunity of LIN transceivers. The PESD1CAN is designed to protect two CAN bus lines and can be used for both high speed CAN bus and the fault-tolerant CAN bus protection. With the very low C max. of the PESD1CAN the unwanted parasitic capacitance is reduced to an absolute minimum.
Power Application (e.g. electro motor, inductive loads)
CAN bus
CANL
24 V CMASTER/SLAVE
15 V
PESD1LIN
PESD1CAN 3
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Philips Semiconductors Philips Semiconductors is one of the worlds top semiconductor suppliers, with 20 manufacturing and assembly sites and a sales organization that delivers in 60 countries. For a complete up-to-date list of our sales ofces please visit our website http://www.semiconductors.philips.com/sales 2006 Koninklijke Philips Electronics N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: May 2006 Document order number: 9397 750 15548 Printed in the Netherlands