BLF6G21-10G: 1. Product Profile

BLF6G21-10G
Power LDMOS transistor

Rev. 3 11 April 2013 Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz
Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA
[1]
f (MHz) 2110 to 2170 2110 to 2170
VDS (V) 28 28
PL(AV) (W) 0.7 2
Gp (dB) 18.5 19.3
D (%) 15 31
ACPR (dBc) 50[1] 39[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits

Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: Average output power = 0.7 W Gain = 18.5 dB Efficiency = 15 % ACPR = 50 dBc Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: Average output power = 2 W Gain = 19.3 dB Efficiency = 31 % ACPR = 39 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency
NXP Semiconductors
BLF6G21-10G
Excellent thermal stability No internal matching for broadband operation Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multi carrier applications in the HF to 2200 MHz frequency range Broadcast drivers
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1
Graphic symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLF6G21-10G Description ceramic surface-mounted package; 2 leads Version SOT538A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min 0.5 65 Max 65 +13 +150 225 Unit V V C C
BLF6G21-10G
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NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 11 April 2013
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5. Thermal characteristics
Table 5. Thermal characteristics Conditions
[1]
Symbol Parameter
Typ 3.2
Unit K/W
Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL(AV) = 11 W

[1] Thermal resistance is determined under specified RF operating conditions
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs Parameter drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 18 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 0.9 A VGS = VGS(th) + 3.75 V; ID = 0.625 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 Typ 1.9 3.1 0.5 0.4 0.5 Max 2.4 1.5 150 Unit V V A A nA S pF
7. Application information
Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp D ACPR Parameter power gain drain efficiency adjacent channel power ratio Conditions PL(AV) = 0.7 W PL(AV) = 0.7 W PL(AV) = 0.7 W Min Typ 18.5 15 50 Max Unit dB % dBc
Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp D ACPR Parameter power gain drain efficiency adjacent channel power ratio Conditions PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W Min 17.3 29 Typ 19.3 31 39 Max 36 Unit dB % dBc
7.1 Ruggedness in class-AB operation

The BLF6G21-10G is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 2140 MHz at PL = 10 W.
BLF6G21-10G All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved.
Product data sheet
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BLF6G21-10G
7.2 CW
50 RLin (dB) 40
(1) 001aal120
30
20
(2)
10
(3)
0 0 4 8 12 PL (W) 16
VDS = 28 V; IDq = 100 mA. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz
Fig 1.
CW input return loss as a function of load power; typical values
19.5 Gp (dB) 18.5
001aal121
80 D (%) 60
001aal122
(1) (2) (3)
40
17.5
(1) (2) (3)
20
16.5 0 4 8 12 PL (W) 16
0 0 4 8 12 PL (W) 16
Fig 2.
CW power gain as a function of load power; typical values
Fig 3.
CW drain efficiency as a function of load power; typical values
BLF6G21-10G
Product data sheet
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BLF6G21-10G
7.3 1-carrier W-CDMA

50 RLin (dB) 40
(1) 001aal123
30
20
(2) (3)
10
0 0 1 2 3 PL (W) 4
Fig 4.
1-carrier W-CDMA input return loss as a function of load power; typical values
20.0 Gp (dB) 19.6
001aal124
50 D (%) 40
001aal125
19.2
30
(1) (2) (3)
18.8
(1) (2) (3)
20
18.4
10
18.0 0 1 2 3 PL (W) 4
0 0 1 2 3 PL (W) 4
Fig 5.
1-carrier W-CDMA power gain as a function of load power; typical values
Fig 6.
1-carrier W-CDMA drain efficiency as a function of load power; typical values
BLF6G21-10G
Product data sheet
5 of 12
NXP Semiconductors
BLF6G21-10G
30 ACPR (dBc) 40
(3) (2) (1)
001aal126
52 ACPR (dBc) 56
001aal127
50
60
(3) (2) (1)
60
3 PL (W)
64
3 PL (W)
VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz. (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz
Fig 7.
1-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values
Fig 8.
1-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values
7.4 2-carrier W-CDMA

40 RLin (dB) 30
(1) 001aal128
20
(2) (3)
10
0 0 0.6 1.2 PL (W) 1.8
Fig 9.
2-carrier W-CDMA input return loss as a function of load power; typical values
BLF6G21-10G
Product data sheet
6 of 12
NXP Semiconductors
BLF6G21-10G
20.0 Gp (dB) 19.6
001aal129
30 D (%) 20
001aal130
19.2
(1) (2) (3)
18.8
10
(1) (2) (3)
18.4
18.0 0 0.6 1.2 PL (W) 1.8
0 0 0.6 1.2 PL (W) 1.8
Fig 10. 2-carrier W-CDMA power gain as a function of load power; typical values
Fig 11. 2-carrier W-CDMA drain efficiency as a function of load power; typical values
30 ACPR (dBc) 40
001aal131
40 ACPR (dBc) 45
001aal132
(3) (2) (1)
50
(3) (2) (1)
50 55
60
0.6
1.2 PL (W)
1.8
60
0.6
1.2 PL (W)
1.8
Fig 12. 2-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values
Fig 13. 2-carrier W-CDMA adjacent channel power ratio as a function of load power; typical values
BLF6G21-10G
Product data sheet
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BLF6G21-10G
8. Package outline
Ceramic surface-mounted package; 2 leads SOT538A
z2 (4) D1 D2
z4 (4) B
1 A L
Lp
z1 (4) H E2 E1 E
z3 (4) 2 a B Q
w1
2.5 scale
5 mm
Dimensions (mm are the original dimensions) Unit mm A b c D D1 D2 E E1 E2 H L Lp Q w1 0.25 0.51 0.0 0.43 0.18 0.81 0.00 z1 z2 z3 z4 7 0
sot538a_po
max 2.34 1.35 0.23 5.16 4.65 5.16 4.14 3.63 4.14 7.49 2.03 nom min 2.13 1.19 0.18 5.00 4.50 5.00 3.99 3.48 3.99 7.24 1.27
1.02 0.1
0.58 0.25 0.97 0.51
Outline version SOT538A
References IEC JEDEC JEITA
European projection
Issue date 06-03-16 13-02-07
Fig 14. Package outline SOT538A

BLF6G21-10G All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved.
Product data sheet
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BLF6G21-10G
9. Abbreviations
Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM HF LDMOS PAR PDPCH PHS RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Personal Handy-phone System Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access
10. Revision history

Table 10. Revision history Release date 20130411 Data sheet status Product data sheet Change notice Supersedes BLF6G21-10G v.2 Document ID BLF6G21-10G v.3 Modifications:
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. Product data sheet Objective data sheet BLF6G21-10G v.1 -
BLF6G21-10G v.2 BLF6G21-10G v.1
20091211 20090511
BLF6G21-10G
Product data sheet
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BLF6G21-10G
11. Legal information

11.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term short data sheet is explained in section Definitions. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customers sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). Customer is responsible for doing all necessary testing for the customers applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
11.3
Disclaimers
Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
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Product data sheet
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NXP Semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications. Translations A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
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13. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information.
NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 April 2013 Document identifier: BLF6G21-10G

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BLF6G21-10G

Power LDMOS transistor

f (MHz) 2110 to 2170 2110 to 2170

PL(AV) (W) 0.7 2

Gp (dB) 18.5 19.3

ACPR (dBc) 50[1] 39[1]

1.2 Features and benefits

All information provided in this document is subject to legal disclaimers.

NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 3 11 April 2013

Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL(AV) = 11 W

7.1 Ruggedness in class-AB operation

Product data sheet

Rev. 3 11 April 2013

CW input return loss as a function of load power; typical values

19.5 Gp (dB) 18.5

(1) (2) (3)

(1) (2) (3)

CW power gain as a function of load power; typical values

CW drain efficiency as a function of load power; typical values

All information provided in this document is subject to legal disclaimers.

NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 3 11 April 2013

7.3 1-carrier W-CDMA

20.0 Gp (dB) 19.6

(1) (2) (3)

(1) (2) (3)

1-carrier W-CDMA power gain as a function of load power; typical values

1-carrier W-CDMA drain efficiency as a function of load power; typical values

All information provided in this document is subject to legal disclaimers.

NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 3 11 April 2013

7.4 2-carrier W-CDMA

0 0 0.6 1.2 PL (W) 1.8

All information provided in this document is subject to legal disclaimers.

NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 3 11 April 2013

20.0 Gp (dB) 19.6

(1) (2) (3)

18.0 0 0.6 1.2 PL (W) 1.8

0 0 0.6 1.2 PL (W) 1.8

(3) (2) (1)

(3) (2) (1)

All information provided in this document is subject to legal disclaimers.

NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 3 11 April 2013

0.58 0.25 0.97 0.51

Outline version SOT538A

References IEC JEDEC JEITA

Issue date 06-03-16 13-02-07

Fig 14. Package outline SOT538A

Product data sheet

Rev. 3 11 April 2013

10. Revision history