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REPO
RT
LAB#
1
EE331
Termin
al
Device
Charac
teristic
s and
Diode
Charac
terizati
I. Procedure 1: Measurement of diode reverse leakage current
Measurement-1: Measure the reverse leakage current for the 1N34A,
1N4!, 1N414", and 1N#"1$ diodes. %o this &' using the %MM to
measure the voltage across (1 and divide this voltage &' (1 ) 1. M* to
o&tain the current through (1, and therefore the current through %1.
(ecord 'our measurements and calculations in a ta&le in 'our note&ook.
Diode 1N34A 1N4007 1N4148 1N5819
eas!re
lea"a#e
c!rrent $mA%
0.985 25.4 92.67 98.6
+uestion-1: ,rder these four diodes in rank, from smallest to largest
reverse leakage current. -hich diode .ould &e the most suita&le for
charging u/ a ca/acitor and allo.ing the ca/acitor to kee/ its charge for
the longest /eriod of time0
,(%1( from the smallest to the largest reverse leakage current:
1N34A, 1N4007, 1N4148, 1N5819.
2he most suita&le for charging u/ a ca/acitor and allo.ing the
ca/acitor to kee/ its charge for the longest /eriod of time is the one .hich
has a smallest leakage current. 3ecause this diode .ill discharge the
ca/acitor the slo.est. As for the charging time, this diode has nothing to
do .ith leakage current, &ecause .hen charging the ca/acitor, the diode
o/erates in the for.ard &ias region allo.ing the ca/acitor to kee/ its
charge for the longest /eriod of time. 4o, our ans.er is diode 1N34A.

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II. Procedure 5: Measurement of diode for.ard turn-on voltage
Measurement-5: 6or each of the four diodes 71N34A, 1N4!, 1N414", and
1N#"1$8, follo. this /rocedure. Ad9ust the %: /o.er su//l' ;44 to
/roduce <1. ;olts across (1 &' monitoring .ith the %MM1. Measure
the for.ard turn-on voltage of the diode .ith %MM5. If t.o %MMs are
not availa&le at 'our la& &ench, 'ou ma' have to s.itch &ack and forth
&et.een the t.o terminals at %MM1 and %MM5. (ecord the diode=s
current and voltage in a ta&le in 'our note&ook. 2he diode current is
e>ual to 1. ;?(1. :hange the resistor to the ne@t value and re/eat.
After measuring si@ different 7I, ;8 /airs for the diode, change the diode to
the ne@t one and re/eat each of the si@ measurements again. 2radeoff
&et.een la& grou/ mem&ers, so that ever'one gets to do at least one diode.
R
Real
val!e
1''
ohm
1'&
ohm
1''' ohm
1'11 ohm
1'" Ohm
()*( ohm
1''"
1'3)13"
ohm
1 Ohm
1)'''(+
ohm
, 10/ 102
= 0.098
A
10/1011 =
0.00986 A
10/ 9.89k
= 0.00101
A
10/
103.13k =
9.7 x 10
-5
A
10/1.00096
M = 9.99 x
10
-6
A
1-3.
A
3.23 V 1.14 V 0.36 V 0.1482 V 0.0613 V
1-.'
'/
0.79 V 0.697 V 0.587 V 0.48 V 0.389 V
1-.1
.*
0.9 V 0.72 V 0.59 V 0.48 V 0.37 V
1-0*
1(
0.33 V 0.25 V 0.2 V 0.125 V 0.067 V

+uestion-5:
a8 Asing some gra/h /a/er, /lot the common 7&ase 18 logarithm
of the current versus the voltage for each diodeB that is, create a
semi-log /lot of I versus ;, .here I is on a log scale and ; is on a
linear scale.
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0 0 0 0 0.01 0.1
0
0.5
1
1.5
2
2.5
3
3.5
3.23
1.14
0.36
0.15
0.06
1-3.A
c!rrent
volta#e
0 0 0 0 0.01 0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.79
0.7
0.59
0.48
0.39
1-.''/
c!rrent
volta#e
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0 0 0 0 0.01 0.1
0
0.2
0.4
0.6
0.8
10.9
0.72
0.59
0.48
0.37
1-.1.*
c!rrent
volta#e
0 0 0 0 0.01 0.1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.33
0.25
0.2
0.13
0.07
1-0*1(
c!rrent
volta#e
4ome comments: -e can see that the 4 figures a&ove have the same
characteristic that is the current increases, the voltage increases.
&8 6or each decade of increase in diode current, ho. much does
the diode voltage increase &'0
2'/es of diode %iode voltage increase /er decade
1N34A C ."!;
1N4! C .$1;
1N414" C.11;
1N#"1$ C.#";
c8 Identif' current ranges on 'our gra/h that corres/ond to diode
idealit' factors of 1 and 5. Identif' an' other o&vious trends.
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n ) non-idealit' factor. 6or most n is 1-.1. 2hough it a//roaches 5 in diodes
o/eration at high current densities.
Id ) Is D Ee@/ 7;d ? 7nD;288 F1G
4olve m' ins/ection ;2 ) .5# since the e@/eriment .as done in room tem/erature
environment.
At n)1, Id ) IsDEe@/7;d?7;288 F1G Is ) Id?Ee@/7;d?7;288 F 1G
At n)5, Id ) IsDEe@/7;d?75D;288 F 1G Is ) Id?Ee@/7;d?75D;288 F 1G
3ecause the saturation current is t'/icall' in the range of 1
-1"
H) Is H ) 1
-$
.
4o to identif' current ranges that corres/ond to diode idealit' factors of 1 and 5, .e
have to measure Id and ;d and then solve, check Is. A//l'ing the measured values
and 5 formulas of IIsJ a&ove, .e have the follo.ing result:
1N34
A
N=1

N=2

(3.23V,
0.098A)
7.747e-58
1.567e-4
(1.14V,0.0098
6A)
1.57e-22
3.4e-12
(0.36V,
0.00101A)
5.57e-10
2.03e-6
(148.2m
V, 9.7 x
10
-5
A)
2.67e-7
1.4e-5
(61.3mV,
9.99 x 10
-6
A)
9.4e-7
7.98e-6
1N40
07
N=1

N=2

(0.79V,
0.098A)
1.0889e-15
25.94e-3
(0.697V,0.009
86A)
7.8e-15
3.3e-3
(0.587V,
0.00101A)
6.3e-14
4.47e-4
( 048V,
9.7 x 10
-
5
A)
4.59e-13
6.2e-5
(0.389V,
9.99 x 10
-6
A)
1.75e-12
8.5e-6
1N41
48
N=1

N=2

(0.9V,
0.098A)
2.319e-17
19.8e-3
(0.72V,0.0098
6A)
3.1e-15
3.1e-3
(0.59V,
0.00101A)
5.6e-14
4.44e-4
( 0.48V,
9.7 x 10
-
5
A)
4.59e-13
6.2e-5
(0.37V,
9.99 x 10
-6
A)
3.74e-12
9.1e-6
1N58
19
N=1

N=2

(0.33V,
0.098A)
1.85e-7
106.97e-3
(0.25V,0.0098
6A)
4.5e-7
15.4e-3
(0.2V,
0.00101A)
3.36e-7
2.033e-3
( 0.125V,
9.7 x 10
-
5
A)
6.78e-7
3.52e-4
(0.067V,
9.99 x 10
-6
A)
7.36e-7
6.97e-5
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1N34A : .ith n)1, at Id ) .11A, the Is ) #.#!e-1 is t'/icall' ok
and KK Is ) !.!4!e-#" at Id).$"A. 2hat means, .ith Id ) .$"A to
reach t'/ical saturation current range, n .ould have to much larger.
for n ) 1: Id H) .11A ) 1.1mA.
for n ) 5: Id K) .$"A.
1N4!: 6rom the value ta&le, .e cannot identif' correctl' current
range. 2his is &ecause ;2 ) .5# is not ade>uate for this diode. Also
o&viousl' since .e have no other information to go on the current
ranges can &e determined through trends.
for n ) 1: Id H .$"A.
for n ) 5: Id K .$"A.
1N414": it is the same .ith 1N4!L
for n ) 1: Id H .$"A
for n ) 5: Id K .$"A
1N#"1$: there is no useful value in the ta&le. Mere is clearl' a /ro&lem
.ith ;2 ) .5#. 3ecause .e donNt have an' value .hich is greater
than .$"A so .e assume that this is the /oint that the current are
divided into n)1 and n)5 for.
for n ) 1: Id H .$"A
for n ) 5: Id K .$"A
d8 (ank the four diodes from smallest to largest turn-on voltage.
Mo. does this ranking com/are to that for reverse leakage
current0
1N#"1$ ) .33; H 1N34A ) .3O; H 1N4! ) .!$; H 1N414"
) .$;
2he ranking of current: 1N34A, 1N4007, 1N4148, 1N5819.
2he ranking of voltage: 1N5819, 1N34A, 1N4007, 1N4148.
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III. Procedure 3: Measurement of diode I-; characteristics using the oscillosco/e
Measurement-5: 4ketch the I-; characteristics of each diode in 'our
note&ook 7the' should look like the oscillosco/e trace8 on the same set of
a@es. Asing the scaling factors from the oscillosco/e, scale the @ and ' a@es
of 'our sketch .ith tick marks for current and voltage. Pra/h /a/er is
hand' for this and makes the follo.ing anal'sis easier.
+uestion-3: 6rom 'our sketch, e@tract the for.ard-&ias turn-on voltage
7;on8 for each diode. :om/are 'our ans.ers to the results of the /revious
%MM readings.
1N34A: 2urn on voltage ) 4" m;

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1N4!: 2urn on voltage ) O"m;
1N414": -e saved this /hoto in .rong /lace 7in the oscillosco/e8, so .e canNt sho. it
here. 3ut .e think .e 9ust sho. one of t.o diodes 1N414", 1N#"1$.
1N#"1$: 2urn on voltage ) 31m;
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%iodes 1N34A 1N4! 1N414" 1N#"1$
6rom %MM .3O .!$ .$ .33
6rom sketch .4" .O" No figure .31
1((,( -rong valueL 1O.5Q N, ;ARA1 O.4#Q
:,MM1N2: -e see that .ith each diode, 1N4!, 1N#"1$. 2he 1((,( is
acce/ted. 3ut the diode 1N34A is reall' .rong. Although .e measure man' times
and tr' to fi@ errors as man' as /ossi&le, .e 9ust o&tain this most correct value. -e
think there are some errors:
i. 2he values of com/onents are not reall' good.
ii. 2he diodes is also not reall' good.
iii. 2here are some .rongs in measuring and collecting data.
iv. 2he oscillosco/e is not reall' good.
-e think, in la& times after, .e .ill re/air these errors, and tr' to collect the
most correct values.
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I;. Procedure 4: 1ffect of series and /arallel resistances
Measurement-4: 4ketch the I-; characteristics of the 1N414" diode in
'our note&ook and la&el the current and voltage a@es .ith tick marks
matching to the scale factors on the oscillosco/e.
No., add another 1. k*1?4- resistor in /arallel .ith %1 and o&serve
the effect on the I-; characteristics, as dis/la'ed on the oscillosco/e
screen. 4ketch these ne. characteristics in 'our note&ook on the same set
of a@es as the first I-; curve. 2his ne. I-; curve re/resents ho. the diode
is affected &' a /arallel leakage /ath.
Ne@t, re/lace the %1 and 1. k* /arallel com&ination .ith %1 and a
1 * resistor in series and o&serve the effect on the I-; characteristics.
4ketch these ne. characteristics in 'our note&ook on the same set of a@es
as the other t.o I-; curves. 2his ne. I-; curve re/resents ho. the diode
is affected &' additional series resistance .hich might arise from a /oor
contact or a fault' connection in a circuit.
+uestion-4: Asing onl' a fe. .ell-chosen sentences, discuss the effects of
series and /arallel resistance on the o&served I-; characteristics of a
diode. (efer to 'our sketch of the characteristics as needed.
41(I14:
PA(ARR1R:
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:,MM1N2: -hen .e connect a resistor in series .ith the diode %1, the form
of sketch 7I, ;8 is not change. Mo.ever, .hen .e connect this resistor in
/arallel .ith %1, the form of sketch 7I, ;8 &ecome a linear line .hich is the
characteristic ;on-Am/e of a normal resistor onl'.
-e can sa' that, the diode %1 can ignore the negative /art of In/ut,
and if a resistor is connected in /arallel .ith %1, this effect is canceled.
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;. Procedure #: Measurement of a Sener diode
Measurement-#: 4ketch the I-; characteristics of each diode in 'our
note&ook 7the' should look like the oscillosco/e trace8 on the same set of
a@es. Asing the scaling factors from the oscillosco/e, scale the @ and ' a@es
of 'our sketch .ith tick marks for current and voltage. Pra/h /a/er is
hand' for this and makes the follo.ing anal'sis easier..
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+uestion-#:
a8 Asing the data that .as collected, com/ute a value for the
Tener resistance r
S
of the diode in its &reakdo.n region.
4imilarl', com/ute a value for the for.ard 7on8 resistance r
f
of
the diode in its for.ard region. 2he easiest .a' to do this for
&oth regions is to identif' t.o strategic 7I,;8 /oints .hich
define the &est fit lines in these regions and then com/ute the
inverse slo/es of these lines.
6rom the figure a&ove, .e can see 4 /oints: A74;, 3.3!mA8,
375;, 1.4mA8, :7-1.";, -.#mA8, %7-4;, -1.3!mA8. 7(1
) 1. k* and the 1@ /ro&e8
2he Tener (esistor 7.ith :,%8:
(
S
) U; ? UI F (1) 5.5?."! -1k ) 1#5".! 7*8.
2he for.ard 7on8 resistance r
f
7.ith A,38:
(
f
) U; ? UI F (1) 5?.1$! F 1k ) 1#.53 7*8.
&8 2he /o.er rating of the 1N4!35 Sener diode is >uoted at 1.
-att. :alculate the ma@imum current that the diode can
handle in the for.ard 7on8 direction and then in the reverse
7Sener8 direction and not e@ceed the 1. -att limit.
-e have the formula: Pma@ ) Ima@
5
.(.
the for.ard 7on8 direction : Ima@ ) .5#O A.
the reverse 7Sener8 direction: Ima@ ) .5#OA.
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;I.Procedure O: :haracteriSation of a light-emitting diode 7R1%8
Measurement-O: 4ketch the I-; characteristics of each diode in 'our
note&ook 7the' should look like the oscillosco/e trace8 on the same set
of a@es. Asing the scaling factors from the oscillosco/e, scale the @ and
' a@es of 'our sketch .ith tick marks for current and voltage. Pra/h
/a/er is hand' for this and makes the follo.ing anal'sis easier.
+uestion-O: %iscuss in 'our note&ook .h' the turn-on voltage of the
R1% is significantl' higher than that of a t'/ical silicon s.itching or
rectifier diode. Mint: R1%s are not made of siliconV

3ecause silicon elements donNt have the ca/acit' to emit light, so
R1%s are not made of silicon. 2herefore, R1%s are sim/l' made of
varieties of semiconductors, and this led the significantl' high turn-on
voltage of them.
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