PD - 9.

1370C

IRL3705N
HEXFET Power MOSFET
l
l
l
l
l
l

Logic-Level Gate Drive

Advanced Process Technology
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Fully Avalanche Rated

VDSS = 55V
RDS(on) = 0.01

Description

ID = 89A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

TO-220AB

Absolute Maximum Ratings

Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew

Max.

Units

89
63
310
170
1.1
16
340
46
17
5.0
-55 to + 175

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.50

0.90

62

C/W

8/25/97

IRL3705N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS/TJ

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient

Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
55

1.0
50

Typ.

0.056

12
140
37
78

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)
gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

3600
870
320

V(BR)DSS

I GSS

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, I D = 1mA
0.010
VGS = 10V, ID = 46A
0.012

VGS = 5.0V, I D = 46A

0.018
VGS = 4.0V, I D = 39A
2.0
V
VDS = VGS , ID = 250A

S
VDS = 25V, ID = 46A
25
VDS = 55V, VGS = 0V
A
250
VDS = 44V, VGS = 0V, TJ = 150C
100
VGS = 16V
nA
-100
VGS = -16V
98
ID = 46A
19
nC VDS = 44V
49
V GS = 5.0V, See Fig. 6 and 13

VDD = 28V

I D = 46A
ns

RG = 1.8, VGS = 5.0V

RD = 0.59, See Fig. 10

Between lead,

nH
6mm (0.25in.)
G
from package

and center of die contact

VGS = 0V

pF
VDS = 25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD
t rr
Q rr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
89
showing the
A
G
integral reverse
310
S
p-n junction diode.
1.3
V
TJ = 25C, IS = 46A, VGS = 0V
94 140
ns
TJ = 25C, IF = 46A
290 440
nC
di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

VDD = 25V, starting TJ = 25C, L = 320H

RG = 25, IAS = 46A. (See Figure 12)

ISD 46A, di/dt 250A/s, VDD V(BR)DSS,

TJ 175C

Pulse width 300s; duty cycle 2%.

Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4

IRL3705N
1000

1000

VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V

VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
TOP

ID , D ra in -to -S o u rc e C u rre n t (A )

ID , D ra in -to -S o u rc e C u rre n t (A )

TOP

100

10

2 .5V
20 s PU LSE W ID TH
T J = 2 5C

1
0.1

10

100

2.5 V

10

20 s PU LSE W ID TH
T J = 1 75C

100

0.1

V D S , Drain-to-Source V oltage (V )

3.0

R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )

I D , D r ain- to-S ourc e C urre nt (A )

TJ = 2 5 C
TJ = 1 7 5 C

10

V DS = 2 5 V
2 0 s P U L S E W ID T H
2.0

3.0

4.0

5.0

6.0

7.0

V G S , Ga te-to-S o urce V oltage (V )

Fig 3. Typical Transfer Characteristics

100

Fig 2. Typical Output Characteristics

1000

10

V D S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics

100

8.0

I D = 77 A

2.5

2.0

1.5

1.0

0.5

V G S = 10 V

0.0
-60 -40 -20

20

40

60

80

100 120 140 160 180

T J , Junction T emperature (C)

Fig 4. Normalized On-Resistance

Vs. Temperature

IRL3705N
V GS
C iss
C rs s
C is s C os s

C , C a p a c ita n c e (p F )

5000

=
=
=
=

15

0V ,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd

V G S , G a te -to -S o u rce V o lta g e (V )

6000

C os s

2000

C rs s
1000

0
10

FO R TES T C IR CU IT
SEE FIG U R E 13

A
1

V DS = 4 4V
V DS = 2 8V

12

4000

3000

I D = 4 6A

100

V D S , D rain-to-S ource Voltage (V )

40

60

80

100

120

140

Q G , Total Gate Charge (nC )

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

1000

OPE R ATIO N IN TH IS A RE A LIMITE D

BY R D S(o n)

I D , D ra in C u rre n t (A )

I S D , R e v e rse D ra in C u rre n t (A )

20

100

TJ = 1 75C
T J = 2 5C

10 s
100
100 s

1 ms
10
10m s

VG S = 0 V

10
0.4

0.8

1.2

1.6

2.0

2.4

V S D , S ource-to-Drain Voltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

2.8

T C = 25 C
T J = 17 5C
S ing le Pulse

1
1

A
10

100

V D S , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

IRL3705N
100

VGS

80

ID , Drain Current (A)

RD

VDS

LIMITED BY PACKAGE

D.U.T.

RG

-VDD

60

5.0V
Pulse Width 1 s
Duty Factor 0.1 %

40

Fig 10a. Switching Time Test Circuit

20

VDS
90%

0
25

50

75

100

125

TC , Case Temperature

150

175

( C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

10%
VGS
td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

1

Thermal Response

(Z thJC )

D = 0.50

0.20

0.1

0.10
0.05
0.02
0.01

0.01
0.00001

PDM
t1

SINGLE PULSE
(THERMAL RESPONSE)

t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRL3705N

15 V

VD S

D .U .T

RG

IA S
10V
tp

D R IV E R

+
V
- DD

0 .0 1

Fig 12a. Unclamped Inductive Test Circuit

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

800

TO P
BO TTOM
600

400

200

V D D = 2 5V
25

50

A
75

100

125

150

Starting TJ , Junction T emperature (C)

V (BR )D SS
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS
Current Regulator
Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50K

QG

12V

.2F
.3F

5.0 V
QGS

D.U.T.

QGD

+
V
- DS

VGS

VG

3mA

Charge

Fig 13a. Basic Gate Charge Waveform

ID
1 9A
33A
46 A

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

175

IRL3705N
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

Driver Gate Drive

Period

P.W.

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

D=

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

ISD

IRL3705N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )

1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )

-B -

3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )

4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )

-A -

1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )

6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )

4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )

1 . 1 5 ( .0 4 5 )
M IN
1

1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )

3X

L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN

1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )

4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )

3 X 0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
M

B A

2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )

2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H

3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E XEAM
PLE
: T: HITSHI IS
A NA NIRFIRF
1010
X AM
PLE
S IS
1010
W IT
A SASSESMB
LY LY
WHIT H
E MB
LOLO
T CO
DEDE
9B 9B
1M1M
T CO

A A

IN TE
R NA
T ION
A LA L
IN TE
R NA
T ION
R EC
T IFTIER
R EC
IF IER
IR FIR1010
F 1010
LOLO
GOGO
9246
9246
9B 9B 1M1M
A SASSEM
B LY
S EM
B LY
LOLO
T T COCO
DEDE

P APRT
NUNU
M BE
R R
A RT
M BE

D ADTE
C OD
E E
A TE
C OD
(Y YW
W )W )
(Y YW
Y YY =Y YE
A RA R
= YE
WW
W W= W
= EWEK
E EK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/