Tic 126

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
12 A Continuous On-State Current
100 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 20 mA
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.

MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
TIC126D
Repetitive peak off-state voltage
Repetitive peak reverse voltage
TIC126M
TIC126S
VALUE
VDRM
600
700
TIC126N
800
TIC126D
400
TIC126M
TIC126S
VRRM
TIC126N
Continuous on-state current at (or below) 70C case temperature (see Note 1)
UNIT
400
600
700
800
IT(RMS)
12
IT(AV)
7.5
Surge on-state current at (or below) 25C case temperature (see Note 3)
ITM
100
Peak positive gate current (pulse width 300 s)
IGM
Peak gate power dissipation (pulse width 300 s)
PGM
Average on-state current (180 conduction angle) at (or below) 70C case temperature
(see Note 2)
Average gate power dissipation (see Note 4)
PG(AV)
Operating case temperature range
TC
-40 to +110
Storage temperature range
Tstg
-40 to +125
TL
230
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate
linearly to zero at 110C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.
TIC126 SERIES
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
IDRM
IRRM
IGT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
TEST CONDITIONS
VD = rated VDRM
MIN
MAX
UNIT
TC = 110C
mA
mA
20
mA
VR = rated VRRM
IG = 0
TC = 110C
VAA = 12 V
RL = 100
tp(g) 20 s
VAA = 12 V
RL = 100
TC = - 40C
TYP
2.5
tp(g) 20 s
VGT
Gate trigger voltage
VAA = 12 V
RL = 100
0.8
tp(g) 20 s
VAA = 12 V
RL = 100
TC = 110C
tp(g) 20 s
VAA = 12 V
IH
Holding current
dv/dt
NOTE
On-state voltage
Critical rate of rise of
off-state voltage
0.2
TC = - 40C
100
Initiating IT = 100 mA
mA
VAA = 12 V
40
VT
1.5
IT = 12 A
(see Note 5)
VD = rated VD
IG = 0
1.4
TC = 110C
400
V
V/s
5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
RJC
Junction to case thermal resistance
RJA
Junction to free air thermal resistance
MIN

2
TYP
MAX
UNIT
2.4
C/W
62.5
C/W


TIC126 SERIES
THERMAL INFORMATION
MAX ANODE POWER LOSS
vs
ON-STATE CURRENT
AVERAGE ON-STATE CURRENT

DERATING CURVE
TI03AE
PA - Max Continuous Anode Power Dissipated - W
IT(AV) - Maximum Average On-State Current - A
16
14
Continuous DC
12
10
= 180
8
6
4
0
180
Conduction
Angle
0
30
40
50
60
70
80
90
100
TI03AF
100
TJ = 110C
10
01
01
110
TC - Case Temperature - C
10
100
Figure 1.
Figure 2.
SURGE ON-STATE CURRENT

vs
CYCLES OF CURRENT DURATION
TRANSIENT THERMAL RESISTANCE

vs
CYCLES OF CURRENT DURATION
TI03AG
10
TC 70C
No Prior Device Conduction
Gate Control Guaranteed
1
TI03AH
10
RJC(t) - Transient Thermal Resistance - C/W
100
ITM - Peak Half-Sine-Wave Current - A
IT - Continuous On-State Current - A
0.1
1
10
100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3.

10
100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 4.


TIC126 SERIES
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
GATE TRIGGER CURRENT

vs
CASE TEMPERATURE
CASE TEMPERATURE
TC03AA
TC03AB
VGT - Gate Trigger Voltage - V
IGT - Gate Trigger Current - mA
VAA = 12 V
RL = 100
tp(g) 20 s
10
08
06
04
VAA =12 V
RL = 100
02
1
-50
-25
25
50
75
100
tp(g) 20 s
0
-50
125
-25
25
75
100
125
Figure 5.
Figure 6.
PEAK ON-STATE VOLTAGE

vs
PEAK ON-STATE CURRENT
HOLDING CURRENT
vs
CASE TEMPERATURE
100
TC03AD
TC03AH
25
TC = 25 C
tp = 300 s
VAA = 12 V
VTM - Peak On-State Voltage - V
IH - Holding Current - mA
50
10
Duty Cycle 2 %
15
05
1
-50
-25
25
50
75
Figure 7.
100
125
0
01
10
Figure 8.

4
100
ITM - Peak On-State Current - A



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TIC126 SERIES

SILICON CONTROLLED RECTIFIERS

12 A Continuous On-State Current

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Pin 2 is in electrical contact with the mounting base.

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Peak positive gate current (pulse width 300 s)

Peak gate power dissipation (pulse width 300 s)

Average gate power dissipation (see Note 4)

Operating case temperature range

Storage temperature range

Lead temperature 1.6 mm from case for 10 seconds

APRIL 1971 - REVISED SEPTEMBER 2002

Gate trigger voltage

Junction to case thermal resistance

Junction to free air thermal resistance

APRIL 1971 - REVISED SEPTEMBER 2002

AVERAGE ON-STATE CURRENT

PA - Max Continuous Anode Power Dissipated - W

IT(AV) - Maximum Average On-State Current - A

SURGE ON-STATE CURRENT

TRANSIENT THERMAL RESISTANCE

IT - Continuous On-State Current - A

Consecutive 50 Hz Half-Sine-Wave Cycles

Consecutive 50 Hz Half-Sine-Wave Cycles

APRIL 1971 - REVISED SEPTEMBER 2002

GATE TRIGGER CURRENT

VGT - Gate Trigger Voltage - V

IGT - Gate Trigger Current - mA

PEAK ON-STATE VOLTAGE

ITM - Peak On-State Current - A

APRIL 1971 - REVISED SEPTEMBER 2002

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