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    AE 1 EQ by Faiz Sir

    Uploaded by

    Faiz Rangari
    This document contains past exam questions from Prof. Faiz Rangari covering various topics related to diodes, transistors and FET amplifiers. The questions are grouped by exam date and module topic. Module 1 covers diodes and applications, Module 2 covers field effect transistors, Module 3 covers DC analysis of transistor circuits, Module 4 covers small signal analysis of BJT amplifiers, and Module 5 covers small signal analysis of FET amplifiers. The document provides a comprehensive bank of questions that have been used over multiple years of exams. It is a valuable resource for students to review important concepts and practice example problems.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    AE 1 EQ by Faiz Sir

    Uploaded by

    Faiz Rangari
    129 views16 pages
    This document contains past exam questions from Prof. Faiz Rangari covering various topics related to diodes, transistors and FET amplifiers. The questions are grouped by exam date and module topic. Module 1 covers diodes and applications, Module 2 covers field effect transistors, Module 3 covers DC analysis of transistor circuits, Module 4 covers small signal analysis of BJT amplifiers, and Module 5 covers small signal analysis of FET amplifiers. The document provides a comprehensive bank of questions that have been used over multiple years of exams. It is a valuable resource for students to review important concepts and practice example problems.

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    Question set by Faiz Sir

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    This document contains past exam questions from Prof. Faiz Rangari covering various topics related to diodes, transistors and FET amplifiers. The questions are grouped by exam date and module topic. Module 1 covers diodes and applications, Module 2 covers field effect transistors, Module 3 covers DC analysis of transistor circuits, Module 4 covers small signal analysis of BJT amplifiers, and Module 5 covers small signal analysis of FET amplifiers. The document provides a comprehensive bank of questions that have been used over multiple years of exams. It is a valuable resource for students to review important concepts and practice example problems.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    129 views16 pages

    AE 1 EQ by Faiz Sir

    Uploaded by

    Faiz Rangari
    This document contains past exam questions from Prof. Faiz Rangari covering various topics related to diodes, transistors and FET amplifiers. The questions are grouped by exam date and module topic. Module 1 covers diodes and applications, Module 2 covers field effect transistors, Module 3 covers DC analysis of transistor circuits, Module 4 covers small signal analysis of BJT amplifiers, and Module 5 covers small signal analysis of FET amplifiers. The document provides a comprehensive bank of questions that have been used over multiple years of exams. It is a valuable resource for students to review important concepts and practice example problems.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 16

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    Module 1: Diodes and its Applications


    June
    2015

    Dec 2014

    1. Compare Clipper and Clamper Circuits.

    05

    1. Write down current equation of Diode and explain significance of 04


    each parameters.
    2. Draw a required diode clamper circuit to generate the output V o
    to from the input V1 as shown in the figure, If
    i. V= 0V
    ii. V=0.7V where V is cutin voltage of diode.
    10

    June
    2014

    3. Write short note on construction and operation of photodiode.

    05

    1. Explain effect of temperature on characteristics of PN junction 04


    diode.
    2. Write short note on series and shunt clippers.
    07
    Dec 2013

    3. Write short on construction and operation of varactor diode.

    07

    1. Draw switching characteristics of a diode and explain reverse 04


    recovery time. Faiz Rangari - 8976530729
    2.
    04

    1|Page

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    Obtain output for the clipper shown in the figure. If a sine wave
    of 15sinwt is applied as an input. Assume practical diode with
    suitable cutin voltage.

    3. Write short note on small signal model of diode.

    05

    4. Write short note on Construction and operation of schottkey 05


    diode.
    June
    2015

    Module 2: Field Effect Transistors


    Faiz Rangari - 8976530729

    1. Compare Depletion and Enhancement type MOSFET.

    Dec
    2014

    June
    2014

    Dec
    2013

    05

    2. Explain the basic operation and characteristics of n-channel 10


    enhancement type MOSFET.
    3. Write short note on Energy Band diagram of MOS capacitor. 05
    1. Explain the working of n-channel EMOSFET with the help of
    output characteristics, showing clearly effect of channel length 10
    modulation. Give equation of drain current in linear and
    saturation region along with conditions.
    2. Write short note on MOS capacitor.
    05
    1. Draw and explain energy band diagram of MOS capacitor in 10
    accumulation, depletion and inversion region.
    2. Write short note in MOSFET operation.
    07
    1. Draw energy band diagram of MOS capacitor in accumulation, 04
    depletion and inversion region for p-substrate.
    2. Write short note on regions of operation of FET.
    05
    2|Page

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    June
    2013

    Dec
    2012

    1. Explain EMOSFET.

    05

    1. Explain graphical determination of FET parameters.

    05

    2. Explain with the help of neat diagram the structure of a NChannel FET, and its volt-ampere characteristics. In what way it 10
    is different from BJT.

    2. Explain transfer characteristics of JFET.

    05

    Module 3: DC Analysis of Transistor Circuits


    June 2015
    1. Transistor is current controlled device while FET is voltage
    controlled device. Justify.
    2. Define Stability factor. Derive the equation for Stability factor.
    State which biasing technique is more suitable. Justify your
    answer.
    3. For a NPN transistor in CE mode voltage divider configuration
    determine Vc and Vb. Given Vcc= +20V, VEE= -20V, R1= 8.2K,R2=
    2.2 K, Rc= 2.7 K, RE= 1.8 K, C1=C2= 10F and = 120.
    4. Write short note on Biasing of JFET for Zero Temperature Drift.
    5. Write short note on DC load line and significance of Q point.

    6. Determine IDQ, VGSQ, VD and VS for the network shown below.

    05
    10
    10
    05
    05

    10

    3|Page

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    Dec 2014
    1. The PNP transistor shown on figure has = 50. Find the value of
    Rc to obtain Vc= +5V. What happen when transistor is replaced
    with another transistor having = 100.
    04

    Faiz Rangari - 8976530729

    2. Why Common Collector amplifier is used as buffer? Why Buffers 04


    are required.
    3. For the circuit shown on figure. Find IDS and VDS if VRS= 1.5V.
    04

    4. Design JFET circuit with voltage divider biasing as shown in


    figure with JFET parameters IDSS= 12mA, VP= -3.5V and = 0. Let
    R1+R2= 100K, IDSQ= 5mA and VDSQ= 5V.
    10

    4|Page

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    5. For the circuit shown in figure, assume =100.


    10
    i. Find thevenins equivalent voltage Vth and resistance
    Rth for base circuit.
    ii. Determine ICQ and VCEQ

    June 2014

    6. What are different biasing techniques used to bias D-MOSFET


    and E-MOSFET. Explain with the help of appropriate circuit 10
    diagrams.
    1. Find RB and Rc for the circuit shown to obtain VCE= 5V and Ic= 04
    2mA
    2. In n-channel MOSFET VDS= 5V, VGS= 5V, VBS= 0, W=10m,
    04
    L=5m, kn= 100mA/V2 and VTO= 1V. Calculate its drain current
    for channel length modulation factor of 0 and 0.25V-1.
    3. Differentiate between BJT and MOSFET.
    04
    4. Find ICQ and VCEQ for the circuit shown in figure if =100.

    10

    5|Page

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    5. The JFET shown in the figure has parameters IDSS= 8mA and Vp=
    -4V. Determine VG, IDSQ, VDSQ and VGSQ.
    10

    Dec 2013
    1.
    04

    Faiz Rangari - 8976530729

    Draw the DC load line for the above circuit.

    2. Obtain IDQ , VDSQ, VGSQ graphically.

    08
    3. Derive the expression for Threshold voltage foe Enhancement 10
    type N-channel MOSFET.

    4.

    10

    Determine IB, Ic, VCE, and VBE and also SICO for the biasing circuit

    6|Page

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    shown in figure.

    5. Explain graphical method to obtain parameters of CE 10


    configuration.
    6. Calculate IDQ , VDSQ, VGSQ
    05

    June
    2013
    1.

    For the circuit shown in the figure the JFET parameters are I DSS=
    5mA, Vp= -4V

    10

    Determine the following with ID= 2mA and VDS= 6V


    i.
    ii.
    iii.
    iv.
    v.

    RD
    Rs
    VD
    Vs
    VRD

    7|Page

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    2. A CE BJT amplifier is shown in the figure with VCE= 12V, Ic=


    2mA, Stability factor 5.1, Vcc= 24V, VBE= 0.7V, = 50 and Rc=
    4.7K.
    Determine the value of resistors RE, R1 and R2 (Hint: R2= 0.1RE)

    10

    3.

    10
    For the network of figure with RD= 2K, RG= 10M and
    VDD=12V.
    Determine the following
    i.
    ii.

    IDQ
    VDSQ

    8|Page

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    Dec 2012
    1. Explain BJT as a switch.

    05

    2. Discuss using the concept of load line superimposed on the


    transistor characteristics. How a simple CE circuit can amplify a 10
    time varying signal.
    3. The following parameters are obtained from certain JFET
    datasheet: VGSoff= -8V and IDSS= 5mA. Determine the values of ID,
    10
    for each value of VGS ranging from 0 to -8 Vin 1V steps. Plot the
    transfer characteristics curve for the same data.
    4. Explain output characteristics of CE BJT voltage amplifier.

    05

    Module 4: Small Signal Analysis of BJT Amplifiers


    June
    2015
    1. Derive the equations for Av, Ai, Ri and Ro for a NPN transistor in 10
    CE mode voltage divider bias configuration with RE unbypassed.
    2. For the network given below determine Zi, Zo and Av.
    10

    3. Determine Zi, Zo and Av for the circuit shown below.


    10

    9|Page

    AE-1/AE/EDC

    Dec 2014

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    4. Write short note on Small signal equivalent circuit of CC 05


    amplifier.
    1. Draw circuit diagram of CE amplifier with voltage divider bias
    with bypassed emitter resistance and derive expression for
    voltage gain, current gain, input resistance and output resistance 10
    using Hybrid- model which includes early effect.
    2. Write short note on Hybrid- model of BJT.

    June
    2014

    05

    3. Write short note on AC and DC load line.

    05

    1. Draw and explain small signal hybrid-Pi model of BJT including


    04
    early effect.
    2. The parameters of the transistors in the circuit shown in the
    figure are = 100 and VA= 100V.
    i. Determine the DC voltage at base and emitter terminals
    ii. Find Rc such that VCEQ= 3.5V and
    iii. Assuming Cc and CE as short circuit, determine small
    signal voltage gain Av=Vo/Vs.

    10

    10 | P a g e

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    3. For the common base amplifier shown in the figure, derive the
    expression for voltage gain, current gain, input resistance and
    output resistance using hybrid- model.
    10

    Dec 2013
    1. Compare CB, CC and CE configuration.

    2. Determine Ri, Ro, Av and gm for the amplifier circuit shown in


    figure.

    04

    10

    3. Determine Hybrid- parameters.


    05

    4. Write short note on Hybrid- model of BJT.

    05

    11 | P a g e

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    June
    2013
    1. Design a single stage RC coupled CE audio frequency amplifier
    employing BC147B BJT to satisfy the following conditions.
    , SICO 10, Load resistor RL= 10K and output 15
    voltage Vo= 3V.

    Dec 2012

    2. For the designed amplifier in above question determine,


    expected voltage gain, input impedance, output impedance and 05
    current supplied by source voltage VCC.
    1. Design for supply voltage Vcc, collector resistor Rc,emitter
    resistor RE, voltage divider biasing resistor R1 and R2 of a single
    stage RC coupled CE audio amplifier with following conditions.
    10
    , SICO 10, Load resistor RL= 5K and output
    voltage Vo= 3V.

    2. For the circuit shown below, determine the following with


    and = 100
    i. ICQ and IEQ
    ii. Input and output impedance
    iii. Voltage gain
    iv.
    Current gain
    v.
    List advantages of circuit shown

    10

    Faiz Rangari - 8976530729

    12 | P a g e

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    Module 5: Small Signal Analysis of FET Amplifiers


    Dec 2014

    June
    2014

    1. Draw small signal model of JFET and Explain significance of each 04


    parameters.
    2. In n-channel EMOSFET
    i. Substrate Doping NA=1016cm-3
    ii. Polysilicon Gate doping ND=1020cm-3
    iii. Gate oxide thickness tox= 0.5m
    iv.
    Oxide positive charge interface density= 4x1010cm-2
    10
    v.
    Charge of electron= 1.6x10-19 col
    vi.
    Permittivity of free space= 8.85x10-14 F/cm
    vii. Dielectric constant of Si= 11.9
    viii. Dielectric constant of SiO2= 3.9
    Find zero bias threshold voltage(VT0)
    1. For the common gate circuit shown in figure, the NMOS
    transistors parameters are VTN= 1V, kn= 3mA/V2 and = 0.
    i. Determine IDSQ and VDSQ
    ii. Calculate gm and ro
    iii. Find the small- signal gain Av= Vo/Vi. Assume Cc1 and Cc2
    acts as short circuit for small signal analysis.

    10

    2. Derive expression for voltage gain of NMOS source follower 08


    circuit.

    13 | P a g e

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    Dec 2013
    1.

    04

    Obtain gm, ro and Av for the amplifier circuit shown in figure. In


    which region the device is operating? Justify.

    2.

    10
    VTN= 1V, Kn= 0.5mA/V2, =0.01V-1

    Determine VGSQ and VDSQ

    Also calculate voltage gain, input and output resistance

    14 | P a g e

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    June 2013
    1. Design single stage RC coupled CS audio frequency amplifier
    employing JFET BFW-11 to satisfy the following requirements
    IDQ= 0.5IDSS, RL= 120K, VDD=20V and output peak 10
    voltage Vo=4.5V.

    Dec 2012

    2. For the above designed circuit with source resistor R S


    unbypassed, determine voltage gain, input impedance, output 10
    impedance and output voltage for input voltage of 20VPP.

    1. Design single stage RC coupled CS audio frequency amplifier


    employing JFET BFW-11 to satisfy the following requirements
    IDQ= 3mA, RL= 120K, VDD=20V and output peak 10
    voltage Vo=4.5V.

    2. For the above designed circuit with source resistor R S


    unbypassed, determine voltage gain, input impedance, output 10
    impedance and output voltage for input voltage of 20VPP.
    3. Determine the small signal voltage gain of a MOSFET circuit
    with VGSQ= 2.12V, VDD= 5V, Rd= 2.5K, VTN= 1V, Kn= 0.8mA/V2
    and = 0.02V-1. Assume transistor is biased in the saturation
    region.

    10

    15 | P a g e

    AE-1/AE/EDC

    Prof. FAIZ RANGARI


    -8976530729

    Exam Questions [EQ]

    Module 6: Oscillators
    June
    2015

    Dec
    2014

    June
    2014

    Dec
    2013

    1. Explain barkhausen criteria for sustained oscillations.

    05

    1. Compare Collpits and Clapps Oscillator.

    04

    2. Draw a neat circuit diagram of Wien bridge oscillator and derive 10


    an expression for its output frequency.
    3. Write short note on crystal oscillator.
    05

    2. Explain the working of Wien Bridge Oscillator. Derive the


    10
    expression for frequency of oscillation and the value of gain
    required for sustained oscillation.
    3. Write short note on Twin-T oscillator.
    05
    1. Why LC oscillators are preferred for high frequency 04
    applications?
    2. Draw and explain working of transistorized Wien bridge 10
    oscillator.
    3. Write short note on Twin-T oscillator.
    07
    1. State and Explain barkhausen criteria for oscillations.

    04

    2. Derive the expression for frequency of oscillation for a 08


    transistorized (BJT) RC phase shift oscillator.
    3. Write short note on crystal oscillator.
    05

    16 | P a g e

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