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Faculty of Information Engineering & Technology

Semiconductors (ELCT503)
Electronics Department Dr. Hany Bastawrous
Winter 2012 Eng. Ramy Hanna
__________________________________________________________________________________

Lab Report 1: Diode I-V Characteristics


Contents that should be delivered for every report:

1- Netlist code for each experiment showing all components, models and control statements.
2- Output graph of each experiment.
3- Filling all tables and answering all questions in the report.

Note: Lab reports are formed in groups of two and delivered in the next lab session.

Name :
ID:

Name:
ID:

For this report you should solve experiment 1, experiment 2 and experiment 3 parts a) b) c).
Purpose: Determine several diode parameters, investigate I-V characteristics of diodes and
Zener diodes when forward or reverse bias is applied, and understand the behavior of simple
diode circuits.

Experiment 1: (Diode 1N4148)

(a) Use DC sweep to simulate the circuit shown and


plot I versus for VD for -1< VD < 1 with 0.01 step. R =
1k. (Note: How will you set the x-axis to VD?)
(b) At what voltage does the current begin to increase
very quickly?
(c) Fill in the table below by obtaining values from
the graph. Comment on the value of diode’s
resistance RF.

ID (A) VD(V) RF (Ω) = VD/ID


30µA

50uA

0.1mA(100 µA)
0.2mA

0.4mA

(d) Plot log(ID) versus VD for 0.5V < VD < 0.8V get n and Is from this graph this graph?

Experiment 2:
(a) Determine the value of resistance that will give a diode current
of 10mA assuming a 0.7V battery model for diode.
(b) Using 1N4148 model, simulate this circuit for this circuit.
Determine simulation type? What is the current obtained from
your simulation?
Experiment 3: Simple Diode Circuits

(a) Use DC sweep to simulate the circuit shown for 0<Vin<10 with 0.5V for R=100Ω, R=1KΩ
and R=10kΩ. Comment on the effect of changing the resistance R.

Vin Vout
R=100Ω R=1KΩ R=10kΩ
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10

(b) What is the effect of the diode on Vo?

(c) Derive an expression for Vo as a function of Vin using the (battery + resistance) model of the
diode. Get values of battery and resistance from the linear I-V characteristic plot for ID=0.4mA.

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