Ecen 326 - Lab 7 Report
Ecen 326 - Lab 7 Report
Ecen 326 - Lab 7 Report
Objectives
Understand the characteristics of a transconductance amplifier.
Design and analyze a BJT amplifier meeting certain constraints.
Evaluate the DC operating point of each transistor in each part of the circuit.
Procedure
In this lab, the BJT amplifier circuit designed from the pre-lab was constructed. The
amplifier was designed to fit the following constraints shown in Figure 1.
Figure 3: Transconductance
Data Tables
Table 1: Measured Current Values
Parameter
Value
I5
1.03 mA
I3
1.14 mA
I4
1.137 mA
I6
1.035 mA
IT
2.31 mA
Isupply
4.342 mA
BJT
VCE
VBE
Q1
3.84 V
0.64 V
Q2
3.84 V
0.65 V
Q3
0.65 V
0.65 V
Q4
0.655 V
0.65 V
Q9
2.62 V
0.668 V
Value
Transconductance, Gm
2 mA/V
2.4 V
Input Resistance
583.58 k
Transconductance (Gm)
0.667 mA/V
VCM maximum
3.80 V
VCM minimum
-3.21 V
Discussion
The circuit we built in this lab met all the given specifications. We had a
transconductance of 2 mA/V which is higher than the required 1 mA/V.
Conclusion
From this lab, we have a better understanding of the characteristics of a BJT
Operational Transconductance Amplifier, and we became more familiar with the
procedures of how to design and analyze output waveforms to meet given constraints of
transconductance. Also, we have learnt how to calculate DC Biasing for an
asymmetrical circuit topology.