Experiment 1

Experiment 1
Diode Characteristic
1. Introduction
1.1. Objective
1. Understanding the characteristics of each type (kind) of diode device.
2. Recognizing the spesification of each type (kind) of diode device.
3. Learning how to test the characteristics of each type of diode device by using
various instruments, and how to judge the accepted and defective device.
1.2. Experiment Equipements

1. KL-200 Linear Circuit Lab.
2. Experiment Module: KL-23001
3. Experiment Instrument: 1. Oscilloscope.
4. Tool: Basic hand tools.
5. Material: As indicated in the KL-23001.
2. Basic Theory
2.1.
PN Junction Diode
The diode is a device formed from a junction of n-type and p-type
semiconductor material. The lead connected to the p-type material is called the anode
and the lead connected to the n-type material is the cathode. In general, the cathode of
a diode is marked by a solid line on the diode.
2.2. Forward Bias

When a diode is connected in a Forward Bias condition, a negative voltage is
applied to the N-type material and a positive voltage is applied to the P-type material.
If this external voltage becomes greater than the value of the potential barrier, approx.
Basic Electronics Laboratory Electrical Engineering, Universitas Internasional Batam
0.7 volts for silicon and 0.3 volts for germanium, the potential barriers opposition will
be overcome and current will start to flow.
This is because the negative voltage pushes or repels electrons towards the
junction giving them the energy to cross over and combine with the holes being
pushed in the opposite direction towards the junction by the positive voltage. This
results in a characteristics curve of zero current flowing up to this voltage point, called
the "knee" on the static curves and then a high current flow through the diode with
little increase in the external voltage as shown below.
2.3. Reverse Bias

When a diode is connected in a Reverse Bias condition, a positive voltage is
applied to the N-type material and a negative voltage is applied to the P-type material.
The positive voltage applied to the N-type material attracts electrons towards the
positive electrode and away from the junction, while the holes in the P-type end are
also attracted away from the junction towards the negative electrode.
The net result is that the depletion layer grows wider due to a lack of electrons
and holes and presents a high impedance path, almost an insulator. The result is that a
high potential barrier is created thus preventing current from flowing through the
semiconductor material.
2.4. Characteristic Curve (V-I) of Diode
3. Experiment Procedure
3.1.
Plotting the V-I Characteristic Curve of Silicon Diode

1. First fix the module KL-23001 in the KL-200 Linear Circuit Lab, then locates
the block marked 23001-block a.
2. Insert the short circuit clip by referring to Fig 1-1 and the short circuit clip
arrangement diagram 23001block a.2(a). Connect the voltmeter and ammeter.
3. Connect 12V to the input (IN) terminals, then adjust VR2 (VR10K) to apply
voltage to two terminals of the diode as shown in Experiment Table (1) given,
and view to corresponding if (forward current). Use VR2 to continuously
adjust Vf to view how it will change, then record in Experiment Table (1).
4. Insert the short circuit clip by referring to Fig 1-1 (b) and the short circuit
clip arrangement diagram 23001 block a.2(b) (reverse connection). Connect
the voltmeter and ammeter.
5. Connect 12V to the input (IN) terminals, and then adjust VR2 (VR10K) to
apply reserve voltage to two terminals of the diode as shown in Experiment
Table (2) given, and view the corresponding Ir. Then record in the Experiment
Table (2).
6. Plot the values of Experiment Table (1) and (2) on the coordinate paper as Fig
1-2.
Fig 1-1
4.
Experiment Data
4.1. Characteristic Curve of Silicon Diode
Table 1. Forward Bias V-I of Silicon Diode

VFwd
IFwd
Table 2. Reverse Bias V-I of Silicon Diode
VRev
IRev
IFwd
VRev
VFwd
IRev
Fig 1-2. Characteristic Curve of Silicon Diode
4.2. Characteristic Curve of Germanium Diode
Table 3. Forward Bias V-I of Germanium Diode
VFwd
IFwd
Table 4. Reverse Bias V-I of Germanium Diode
VRev
IRev
IFwd
VRev
VFwd
IRev
Fig 1-3. Characteristic Curve of Silicon Diode
4.3. Characteristic Curve of Zener Diode

Table 5. Forward Bias V-I of Zener Diode
VFwd
IFwd
Table 6. Reverse Bias V-I of Zener Diode
VRev
IRev
IFwd
VRev
VFwd
IRev
Fig 1-4. Characteristic Curve of Zener Diode
5.
Data Analysis and Assignment

a) Give your analysis about the characteristic curve of Germanium and Silicon
diode. Please give example of it uses in electronics circuit!
b) What is the application of zener diode in electronics circuit? Explain how it
works!
c) Explain what you know about this term:
a. Breakdown Voltage
b. Knee Voltage

Experiment 1 - Basic Electronics

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Experiment 1 - Basic Electronics

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1.2. Experiment Equipements

2.2. Forward Bias

2.3. Reverse Bias

Basic Electronics Laboratory Electrical Engineering, Universitas Internasional Batam

2.4. Characteristic Curve (V-I) of Diode

Plotting the V-I Characteristic Curve of Silicon Diode

Basic Electronics Laboratory Electrical Engineering, Universitas Internasional Batam

4.1. Characteristic Curve of Silicon Diode

Table 1. Forward Bias V-I of Silicon Diode

Basic Electronics Laboratory Electrical Engineering, Universitas Internasional Batam

Basic Electronics Laboratory Electrical Engineering, Universitas Internasional Batam

4.3. Characteristic Curve of Zener Diode

Data Analysis and Assignment

Basic Electronics Laboratory Electrical Engineering, Universitas Internasional Batam

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