Course Code: PHIR11

Department of Physics
National Institute of technology Course title: Physics-I
Kurukshetra  (practical)

EXPERIMENT NO: 10

Experiment:- To study I-V characteristics and rectification properties of a semiconductor

diode.

Apparatus:-Osaw diode characteristics module, connecting leads & instruction Manual.

Theory:-
Donor impurities (pentavalent) are introduced into one-side and acceptor impurities into
the other side of a single crystal of an intrinsic semiconductor to form a p-n diode with a region
called depletion region (this region is depleted off the charge carriers). This region gives rise to a
fictions potential barrier Vγ called Cut- in Voltage. This is the voltage across the diode at which
it starts conducting. The P-N junction can conduct beyond this Potential. The P-N junction
supports uni-directional current flow. If +ve terminal of the input supply is connected to anode
(P-side) and –ve terminal of the input supply is connected to cathode (N- side), then diode is said
to be forward biased. In this condition the height of the potential barrier at the junction is
lowered by an amount equal to given forward biasing voltage. Both the holes from p-side and
electrons from n-side cross the junction simultaneously and constitute a forward current
(Injected minority current) – due to holes crossing the junction and entering N-side of the
diode, due to electrons crossing the junction and entering P-side of the diode). Assuming current
flowing through the diode to be very large, the diode can be approximated as short-circuited
switch. If –ve terminal of the input supply is connected to anode (p-side) and +ve terminal of the
input supply is connected to cathode (n-side) then the diode is said to be reverse biased. In this
condition an amount equal to reverse biasing voltage increases the height of the potential barrier
at the junction. Both the holes on p-side and electrons on n-side tend to move away from the
junction thereby increasing the depleted region. However the process cannot continue
indefinitely, thus a small current called reverse saturation current continues to flow in the
diode. This small current is due to thermally generated carriers. Assuming current flowing
through the diode to be negligible, the diode can be approximated as an open circuited switch.

It is observed that Ge diode has smaller cut-in-voltage (0.3V) when compared to Si diode
(0.6V). A plot between this voltage and current gives the diode forward characteristics.
Procedure:- For forward characteristics apparatus:

1. Make circuit connections as given in circuit in diagram in figure1.

2. Note the type of diode connected on experiment board.
3. Connect the voltmeter and Ammeter of suitable ranges. For forward bias characteristics
keep voltmeter at 1.5V range and current meter at 15mA range using switches S1& S2.

Fig.1: Forward biasing of p-n junction

4. Measure input applied voltage using voltmeter across power supply.

5. Switch on power supply, increases the voltage slowly with potentiometer P1.
6. Note the ammeter and voltmeter readings for various values of applied voltage.
7. Draw the graph between voltage and current compare it with a graph given in figure 3.
8. At a suitable operating point, calculate the static and dynamic resistance of the diode.

S. No. When diode is forward biased When diode is reverse biased

Voltage(V) Current(mA) Voltage(V) Current(μA)
1.
2.
3.
4.
5.
6.
Reverse characteristics:-

1. Make circuit connection as given in fig 2.

Fig 2: Reverse biasing of p-n junction

2. For reverse characteristics keep voltmeter at 12 V range and current meter at 50µa range
using switches S1 & S2.

Fig 3: V-I CHARACTERISTICS OF P-N JUNCTION DIODE

 3. Measure input voltage using voltmeter.
4. Switch on the power supply and increase the applied voltage with potentiometer P2.
5. Note the voltmeter and micro ammeter reading for various value of applied voltage.
6. Draw the graph between voltage and current and compare it with a graph in figure 3.

Calculations from Graph:

Cut in voltage (V)=

Static forward Resistance Rdc = Vf/If Ω

Dynamic forward Resistance rac = ΔVf/ΔIf Ω (at 0.7V say)

Static Reverse Resistance Rdc =Vr/Ir Ω

Dynamic Reverse Resistance rac = ΔVr/ΔIr Ω

Result:
Thus the VI characteristic of PN junction diode is verified.

1. Cut in voltage = ……… V

2. Static forward resistance = ………. Ω

3. Dynamic forward resistance = ………. Ω

Precautions:
1. While doing the experiment do not exceed the ratings of the diode. This may lead to damage
of the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.
 VIVA QUESTIONS:

1. What are the types of Semiconductor?

Intrinsic semiconductor 2. Extrinsic semiconductor.

2. What is Intrinsic Semiconductor?

Pure form of semiconductors are said to be intrinsic semiconductor. Ex: germanium, silicon.

3. What is Extrinsic Semiconductor?

If certain amount of impurity atom is added to intrinsic semiconductor the resulting

semiconductor is Extrinsic or impure Semiconductor.

4. What are the types of Extrinsic Semiconductor?

1. P-type Semiconductor 2. N- Type Semiconductor.

5. What is P-type Semiconductor?

The Semiconductor which is obtained by introducing trivalent impurity atom (gallium, indium) is
known as P-type Semiconductor.

6. What is N-type Semiconductor?

The Semiconductor which is obtained by introducing pentavalent impurity atom (phospherus,

Antimony) is known as N-type Semiconductor.

7. What is doping?

Process of adding impurity to a intrinsic semiconductor atom is doping. The impurity is called
dopant.

8. Why n - type or pentavalent impurities are called as Donor impurities?

n- type impurities will donate the excess negative charge carriers ( Electrons) and therefore they
are referred to as donor impurities.

9. Why P – type or trivalent impurities are called as acceptor impurity?

p- type impurities make available positive carriers because they create holes which can accept
electron, so these impurities are said to be as acceptor impurity.

10. Define drift current?

When an electric field is applied across the semiconductor, the holes move towards the negative
terminal of the battery and electron move towards the positive terminal of the battery. This drift
movement of charge carriers will result in a current termed as drift current.

11. Define the term diffusion current?

A concentration gradient exists, if the number of either electrons or holes is greater in one
region of a semiconductor as compared to the rest of the region. The holes and electron tend to
move from region of higher concentration to the region of lower concentration. This process in
called diffusion and the current produced due this movement is diffusion current.

12. Define mean life time of a hole or electron.

The electron hole pair created due to thermal agitation will disappears as a result of
recombination. Thus an average time for which a hole or an electron exists before
recombination can be said as the mean life time of a hole or electron.

13. Define Hall Effect?

If a metal or semiconductor carrying current I is placed in a transverse magnetic field B , an

electric field E is induced in the direction perpendicular to both I and B , This phenomenon is
known as Hall effect.

14. What is depletion region in PN junction?

The region around the junction from which the mobile charge carriers (electrons and holes) are
depleted is called as depletion region, since this region has immobile ions, which are electrically
charged , the depletion region is also known as space charge region.

15. Give the other names of depletion region?

i. space charge region ii. Transition region

16. What is barrier potential?

Because of the oppositely charged ions present on both sides of PN junction an electric potential
is established across the junction even without any external voltage source which is termed as
barrier potential.

17. What is meant by biasing a PN junction?

Connecting a PN junction to an external voltage source is biasing a PN junction.

18. What are the types of biasing a PN junction?

1. Forward bias 2. Reverse bias.

19. What is forward bias and reverse bias in a PN junction?

When positive terminal of the external supply is connected to P region and negative terminal to
N region, the PN junction is said to be forward biased. Under forward biased condition the PN
region offers a very low resistance and a large amount of current flows through it.

20. What is reverse bias in a PN junction?

When positive terminal of the external supply is connected to N type and negative terminal to P
type then the PN junction is said to be in reverse bias. Under reverse biased condition the PN
region offers a very high resistance and a small amount of current flows through it.

21. What is Reverse saturation current?

The current due to the minority carriers in reverse bias is said to be reverse saturation current.
This current is independent of the value of the reverse bias voltage.

22. What is the static resistance of a diode?

Static resistance R of a diode can be defined as the ratio of voltage V across the diode to The
current flowing through the diode. R = V/ I Where R - Static resistance of a diode V - Voltage
across the diode I - current across the diode

23. Define dynamic resistance.

Dynamic resistance of a diode can be defined as the ratio of change in voltage across the diode
to the change in current through the diode.

24. Define the term transition capacitance?

When a PN junction is reverse biased, the depletion layer acts like a dielectric material while P
and N –type regions on either side which has low resistance act as the plates. In this way a
reverse biased PN junction may be regarded as parallel plate capacitor and thus the capacitance
across this set up is called as the transition capacitance.