Eee Exp 3

Experiment
Name: Avradeep Nayak Reg no.21BCE10856

Aim: VI characteristics of PN diode.
Theory
Objectives
At the end of the experiment, the student should

be able to
1.Explain the structure of a P-N junction
diode
2.Explain the function of a P-N junction
diode
3.Explain forward and reverse biased
characteristics of a Silicon diode
4.Explain forward and reverse biased
characteristics of a Germanium diode
Structure of P-N junction diode
The diode is a device formed from a junction of n-

type and p-type semiconductor material. The lead
connected to the p-type material is called the
anode and the lead connected to the n-type
material is the cathode. In general, the cathode of
a diode is marked by a solid line on the diode.
Figurer:1
Figurer:2
Function of a P-N junction diode in Forward Bias
The positive terminal of battery is connected to the

P side(anode) and the negative terminal of battery
is connected to the N side(cathode) of a diode, the
holes in the p-type region and the electrons in the
n-type region are pushed toward the junction and
start to neutralize the depletion zone, reducing its
width. The positive potential applied to the p-type
material repels the holes, while the negative
potential applied to the n-type material repels the
electrons. The change in potential between the p
side and the n side decreases or switches sign.
With increasing forward-bias voltage, the depletion
zone eventually becomes thin enough that the
zone's electric field cannot counteract charge
carrier motion across the p–n junction, which as a
consequence reduces electrical resistance. The
electrons that cross the p–n junction into the p-
type material (or holes that cross into the n-type
material) will diffuse into the nearby neutral region.
The amount of minority diffusion in the near-
neutral zones determines the amount of current
that may flow through the diode.
Figurer:3
Function of a P-N junction diode in Reverse Bias

N side(cathode) and the negative terminal of
battery is connected to the P side(anode) of a
diode. Therefore, very little current will flow until
the diode breaks down.
Figurer:4

N side(cathode) and the negative terminal of
battery is connected to the P side(anode) of a
diode, the 'holes' in the p-type material are pulled
away from the junction, leaving behind charged
ions and causing the width of the depletion region
to increase. Likewise, because the n-type region is
connected to the positive terminal, the electrons
will also be pulled away from the junction, with
similar effect. This increases the voltage barrier
causing a high resistance to the flow of charge
carriers, thus allowing minimal electric current to
cross the p–n junction. The increase in resistance
of the p–n junction results in the junction behaving
as an insulator.
The strength of the depletion zone electric field
increases as the reverse-bias voltage increases.
Once the electric field intensity increases beyond a
critical level, the p–n junction depletion zone
breaks down and current begins to flow, usually by
either the Zener or the avalanche breakdown
processes. Both of these breakdown processes are
non-destructive and are reversible, as long as the
amount of current flowing does not reach levels
that cause the semiconductor material to overheat
and cause thermal damage.
Forward and reverse biased characteristics of a

Silicon diode
In forward biasing, the positive terminal of battery

is connected to the P side and the negative
terminal of battery is connected to the N side of
the diode. Diode will conduct in forward biasing
because the forward biasing will decrease the
depletion region width and overcome the barrier
potential. In order to conduct, the forward biasing
voltage should be greater than the barrier
potential. During forward biasing the diode acts
like a closed switch with a potential drop of nearly
0.6 V across it for a silicon diode. The forward and
reverse bias characteristics of a silicon diode. From
the graph, you may notice that the diode starts
conducting when the forward bias voltage exceeds
around 0.6 volts (for Si diode). This voltage is
called cut-in voltage.
Figurer:5
In reverse biasing, the positive terminal of battery

is connected to the N side and the negative
terminal of battery is connected to the P side of a
diode. In reverse biasing, the diode does not
conduct electricity, since reverse biasing leads to
an increase in the depletion region width; hence
current carrier charges find it more difficult to
overcome the barrier potential. The diode will act
like an open switch and there is no current flow.
Forward and reverse biased characteristics of a Germanium diode
In forward biasing, the positive terminal of battery is connected to the P side

and the negative terminal of battery is connected to the N side of the diode.
Diode will conduct in forward biasing because the forward biasing will
decrease the depletion region width and overcome the barrier potential. In
order to conduct, the forward biasing voltage should be greater than the
barrier potential. During forward biasing the diode acts like a closed switch
with a potential drop of nearly 0.3 V across it for a germanium diode. The
forward and reverse bias characteristics of a germanium diode. From the
graph, you may notice that the diode starts conducting when the forward
bias voltage exceeds around 0.3 volts (for Ge diode). This voltage is called
cut-in voltage.
Figurer:6
In reverse biasing, the positive terminal of battery is connected to the N side

and the negative terminal of battery is connected to the P side of a diode. In
reverse biasing, the diode does not conduct electricity, since reverse biasing
leads to an increase in the depletion region width; hence current carrier
charges find it more difficult to overcome the barrier potential. The diode
will act like an open switch and there is no current flow.
Procedure
1.Forward Bias-Si Diode
1.Set DC voltage to 0.2 V .
2.Select the diode.
3.Set the resistor.
4.Voltmeter is placed parallel to
Silicon diode and ammeter series
with resistor.
5.The positive side of battery to the
P side(anode) and the negative of
battery to the N side(cathode) of
the diode.
6.Now vary the voltage upto 5V and
note the Voltmeter and Ammeter
reading for particular DC voltage .
7.Take the readings and note
Voltmeter reading across Silicon
diode and Ammeter reading.
8.Plot the V-I graph and observe the
change.
9.Calculate the dynamic resistance
of the diode. rd=ΔV/ΔI
10. Therefore from the graph we
see that the diode starts
conducting when the forward bias
voltage exceeds around 0.6 volts
(for Si diode). This voltage is
called cut-in voltage.
2.Reverse Bias-Si Diode
2.Select the diode.
3.Set the resistor.
4.Voltmeter is placed parallel to Silicon diode
and ammeter series with resistor.
5.The positive terminal of battery is
connected to the N side(cathode) and the
negative terminal of battery is connected
to the P side(anode) of a diode.
6.Now vary the voltage upto 30V and note
the Voltmeter and Ammeter reading for DC
voltage .
7.Take the readings and note Voltmeter
reading across Silicon diode and Ammeter
reading.
8.Plot the V-I graph and observe the change.
3.Forward Bias-Ge Diode
2.Use the resistor of 1K ohms and a
Germanium diode.
3.Voltmeter is placed parallel to Germanium
diode and ammeter series with resistor.
connected to the P side(anode) and the
to the N side(cathode) of the diode.
the Voltmeter and Ammeter reading for
particular DC voltage .
reading across Germanium diode and
Ammeter reading.
7.Plot the V-I graph and observe the change.
8.Therefore from the graph we see that the
diode starts conducting when the forward
bias voltage exceeds around 0.3 volts (for
Ge diode). This voltage is called cut-in
voltage.
4.Reverse Bias-Ge Diode
2.Use the resistor of 1K ohms and a
Germanium diode.
3.Voltmeter is placed parallel to Germanium
diode and ammeter series with resistor.
connected to the N side(cathode) and the
to the P side(anode) of a diode.
the Voltmeter and Ammeter reading for DC
voltage .
reading across Silicon diode and Ammeter
reading.
7. Plot the V-I graph and observe the change.
Result forward bias silicon diode:

Forward Forward
Serial No.
Voltage(Volt) Current(mAmp)
1 0.589 0.997
2 0.580 1.24
3 0.577 1.97
4 0.576 2.41
5 0.570 2.10
6 0.572 2.30
Result Reverse biased silicon diode:
Serial No. Reverse Voltage(Volt) Reverse Current(μAmp)
1 1.51 0.100
2 3.00 0.100
3 3.63 0.100
4 6.23 0.100
5 7.22 0.100
6 8.76 0.100
Result forward bias Germenium diode:
XPERIMENTAL TABLE
Forward Forward
Serial No.
Voltage(Volt) Current(mAmp)
1 0.285 3.10
2 0.291 4.90
3 0.297 8.20
4 0.300 10.5
5 0.304 14.2
6 0.306 16.3
Result Reverse biased Germenium diode:

EXPERIMENTAL TABLE
Serial No. Reverse Voltage(Volt) Reverse Current(μAmp)

1 6.30 0
2 8.00 0
3 15.8 0
4 22.6 0
5 27.9 0
6 30.1 30100
Conclusion: we found the results of the frwd and reverse

diode of silicon and germanium respectively from the vlabs
experiment section by doing the requirements.
Software requirement: VLABS

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Experiment

Name: Avradeep Nayak Reg no.21BCE10856

At the end of the experiment, the student should

Structure of P-N junction diode

The diode is a device formed from a junction of n-

Function of a P-N junction diode in Forward Bias

The positive terminal of battery is connected to the

Function of a P-N junction diode in Reverse Bias

The positive terminal of battery is connected to the

The positive terminal of battery is connected to the

Forward and reverse biased characteristics of a

In forward biasing, the positive terminal of battery

In reverse biasing, the positive terminal of battery

In forward biasing, the positive terminal of battery is connected to the P side

In reverse biasing, the positive terminal of battery is connected to the N side

Result forward bias silicon diode:

Result Reverse biased Germenium diode:

Serial No. Reverse Voltage(Volt) Reverse Current(μAmp)

Conclusion: we found the results of the frwd and reverse

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