SRI INDU COLLEGE OF ENGINEERING AND

TECHNOLOGY

DEPARTMENT OF ELECTRONICS AND COMMUNICATION

ENGINEERING

LAB MANUAL
ON
R20ECE21L1:ELECTRONIC DEVICES AND CIRCUITS LAB

II B. TECH I SEMESTER
 R20 B.TECH ECE

R20ECE21L1: ELECTRONIC DEVICES AND CIRCUITS LAB

B.Tech. II Year I Sem. LTPC

0 0 2 1

List of Experiments (Twelve experiments to be done):

Verify any twelve experiments in H/W Laboratory
1. PN Junction diode characteristics A) Forward bias B) Reverse bias.
2. Zener diode characteristics and Zener as voltage Regulator
3. Full Wave Rectifier with & without filters
4. Input and output characteristics of BJT in CE Configuration
5. Input and output characteristics of FE in CS Configuration
6. Common Emitter Amplifier Characteristics
7. Common Base Amplifier Characteristics
8. Common Source amplifier Characteristics
9. Measurement of h-parameters of transistor in CB, CE, CC configurations
10. Switching characteristics of a transistor
11. SCR Characteristics.
12. Types of Clippers at different reference voltages
13. Types of Clampers at different reference voltages
14. The steady state output waveform of clampers for a square wave input
Major Equipment required for Laboratories:
1. Regulated Power Suppliers, 0-30V
2. 20 MHz, Dual Channel Cathode Ray Oscilloscopes.
3. Functions Generators-Sine and Square wave signals
4. Multimeters
5. Electronic Components
 ELECTRONIC DEVICES & CIRCUITS LAB

Experiment-1
PN Junction diode characteristics A) Forward bias B) Reverse bias

AIM: 1. To plot Volt-Ampere Characteristics P-N Junction Diode.

APPARATUS:
S.No Name of the Apparatus Range Quantity
1 Diodes IN 4007 (Ge and Si) 1
2 Resistors 1KΩ, 100Ω 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)μA/(0-200)mA 1
6 Digital Voltmeter (0-20)V DC 1
7 Connecting Wires As Required

THEORY:-
A p-n junction diode conducts only in one direction. The V-I characteristics of the diode
are curve between voltage across the diode and current through the diode. When external voltage
is zero, circuit is open and the potential barrier does not allow the current to flow. Therefore, the
circuit current is zero. When P-type (Anode is connected to +ve terminal and n- type (cathode) is
connected to –ve terminal of the supply voltage, is known as forward bias. The potential barrier is
reduced when diode is in the forward biased condition. At some forward voltage, the potential
barrier altogether eliminated and current starts flowing through the diode and also in the circuit.
The diode is said to be in ON state. The current increases with increasing forward voltage.
When N-type (cathode) is connected to +ve terminal and P-type (Anode) is
connected to –ve terminal of the supply voltage is known as reverse bias and the potential barrier
across the junction increases. Therefore, the junction resistance becomes very high and a very
small current (reverse saturation current) flows in the circuit. The diode is said to be in OFF state.
The reverse bias current due to minority charge carriers.

Dept. of ECE 1
 ELECTRONIC DEVICES & CIRCUITS LAB

CIRCUIT DIAGRAM:

(i) FORWARD BIAS:

(ii) REVERSE BIAS:

Dept. of ECE 2
 ELECTRONIC DEVICES & CIRCUITS LAB

V-I CHARACTERISTICS:

PROCEDURE:

(i) FORWARD BIAS (For ‘Ge’ and ‘Si’ Diode):

1. Connections are made as per the circuit diagram.
2. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is
connected to the cathode of the diode,
3. Switch ON the power supply and increases the input voltage (supply voltage) in Steps.
4. Note down the corresponding current flowing through the diode and voltage across the diode
for each and every step of the input voltage.
5. The readings of voltage and current are tabulated.
6. Graph is plotted between voltage on x-axis and current on y-axis.

Dept. of ECE 3
 ELECTRONIC DEVICES & CIRCUITS LAB

OBSERVATIONS:

Forward Bias:
S.No. Applied voltage Voltage across Current through Diode (mA)
(volts) Diode (volts)

PROCEDURE:
(ii) REVERSE BIAS :
1. Connections are made as per the circuit diagram.
2. For reverse bias, the RPS +ve is connected to the cathode of the diode and RPS –ve is
connected to the anode of the diode.
3. Switch ON the power supply and increase the input voltage (supply voltage) in Steps.
4. Note down the corresponding current flowing through the diode and voltage across the diode
for each and every step of the input voltage.
5. The readings of voltage and current are tabulated.
6. The Graph is plotted between voltage on x-axis and current on y-axis.

Dept. of ECE 4
 ELECTRONIC DEVICES & CIRCUITS LAB

OBSERVATIONS:

REVERSE BIAS
S.No. Applied voltage Voltage across Current through Diode (µA)
(volts) Diode (volts)

PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the diode. This may lead to
damage the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per
the circuit diagram.

RESULT: The Forward and Reverse Bias characteristics for a p-n diode are observed

Dept. of ECE 5
 ELECTRONIC DEVICES & CIRCUITS LAB

Experiment-2
Zener diode characteristics and Zener as voltage Regulator

AIM: 1. To observe and draw the V-I characteristics and Regulation characteristics of a
Zener diode.
2. To find the Zener Break down voltage in reverse biased condition.

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Zener Diode (IN 4735A) 1
2 Resistors 1KΩ, 10KΩ 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)mA 1
6 Digital Voltmeter (0-20)V DC 1
7 Connecting Wires As Required

CIRCUIT DIAGRAM:

(i) V-I CHARACTERISTICS:

Dept. of ECE 6
 ELECTRONIC DEVICES & CIRCUITS LAB

(ii) REGULATION CHARACTERISTICS:

THEORY:
A zener diode is heavily doped p-n junction diode, specially made to operate in
the break down region. A p-n junction diode normally does not conduct when reverse biased. But
if the reverse bias is increased, at a particular voltage it starts conducting heavily. This voltage is
called Break down Voltage. High current through the diode can permanently damage the device
To avoid high current, we connect a resistor in series with zener diode. Once the
diode starts conducting it maintains almost constant voltage across the terminals what ever may
be the current through it, i.e., it has very low dynamic resistance. It is used in voltage regulators.

PROCEDURE:

(i) V-I CHARACTERISTICS:

1. Connections are made as per the circuit diagram.
2. The Regulated power supply voltage is increased in steps.
3. The zener current (lz), and the zener voltage (Vz.) are observed and then noted in the
tabular form.
4. A graph is plotted between zener current (Iz) on y-axis and zener voltage (Vz) on x-axis.

Dept. of ECE 7
 ELECTRONIC DEVICES & CIRCUITS LAB

(ii) REGULATION CHARACTERISTICS:

1. Connections are made as per the circuit diagram.
2. The Regulated power supply voltage is increased in steps.
3. The voltage across the diode (Vz.) remains almost constant although the current through
the diode increases. This voltage serves as reference voltage.
4. The zener current (lz), and the zener voltage (Vz.) are observed and then noted in the
tabular form.
4. A graph is plotted between zener current (Iz) on y-axis and zener voltage (Vz) on x-axis.

OBSERVATIONS:

(i) V-I CHARACTERISTICS:

S.No Zener Voltage (VZ) Zener Current (IZ) (mA)

(volts)

(ii) REGULATION CHARACTERISTICS:

S.No Zener Voltage (VZ) Zener Current (IZ) (mA)

(volts)

Dept. of ECE 8
 ELECTRONIC DEVICES & CIRCUITS LAB

V-I & REGULATION CHARACTERISTICS:

PRECAUTIONS:
1. While doing the experiment do not exceed the
ratings of the zener diode. This may lead to
damage the diode.
2. Connect voltmeter and Ammeter in correct
polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you
have checked the circuit connections as per the
circuit diagram.

Dept. of ECE 9
 ELECTRONIC DEVICES & CIRCUITS LAB

RESULT: The V-I characteristics and Regulation characteristics of a zener diode are observed.

EXPERIMENT -3
FULL WAVE RECTIFIER WITH AND WITHOUT FILTERS

AIM: 1. To obtain the load regulation and ripple factor of a full-wave rectifier by using
(a). without Filter
(b). with Filter
2. To observe the input and output waveforms of a full-wave rectifier.

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Diodes IN 4007 (Si) 2
2 Decade Resistance Box (1KΩ-10 KΩ) 1
3 Transformer 230 V AC 1
4 Capacitor 100µF 1
5 Bread Board
6 Digital Voltmeter (0-20)V (AC & DC) 2
7 Connecting Wires As Required

THEORY:
The circuit of a center-tapped full wave rectifier uses two diodes D1&D2.
During positive half cycle of secondary voltage (input voltage), the diode D1 is forward biased
and D2is reverse biased.
The diode D1 conducts and current flows through load resistor R L. During negative half
cycle, diode D2 becomes forward biased and D1 reverse biased. Now, D2 conducts and current
flows through the load resistor RL in the same direction. There is a continuous current flow
through the load resistor RL, during both the half cycles and will get unidirectional current as
show in the model graph. The difference between full wave and half wave rectification is that a
full wave rectifier allows unidirectional (one way) current to the load during the entire 360
degrees of the input signal and half-wave rectifier allows this only during one half cycle (180
degree).

Dept. of ECE 10
 ELECTRONIC DEVICES & CIRCUITS LAB

CIRCUIT DIAGRAM:

(a) WITHOUT FILTER:

(b) WITH FILTER:

Dept. of ECE 11
 ELECTRONIC DEVICES & CIRCUITS LAB

PROCEDURE:

1. Connections are made as per the circuit diagram.

2. Connect the primary side of the transformer to ac mains and the secondary side to the
rectifier input.
3. By using the multimeter, measure the ac input voltage of the rectifier and, ac and dc
voltage at the output of the rectifier.
4. Find the theoretical value of dc voltage by using the formula,
Vdc=2Vm/П
Where, Vm= √2Vrms, (Vrms=output ac voltage.)
5. Now, the Ripple factor is calculated by using the formula
Γ = ac output voltage (Vac)/dc output voltage (Vdc)

6. By increasing the value of the resistance from 1 KΩ to 10KΩ, the voltage across the load
(VL) and current (IL) flowing through the load are measured.
7. Draw a graph between load voltage (VL) and load current (IL) by taking VL on X-axis and
IL on y-axis.
8. From the value of no-load voltage (VNL), the % regulation is to be calculated from the
theoretical calculations given below.

Dept. of ECE 12
 ELECTRONIC DEVICES & CIRCUITS LAB

INPUT AND OUTPUT WAVEFORMS:

Dept. of ECE 13
 ELECTRONIC DEVICES & CIRCUITS LAB

THEORETICAL CALCULATIONS FOR RIPPLE FACTOR & % REGULATION:

(a) WITHOUT FILTER:

For a Full-Wave Rectifier,

Vrms=Vm/√2

Vdc=2Vm/П

Therefore, Ripple factor Γ=√ (Vrms/ Vdc )2 -1 = 0.482

% regulation = [(VNL-VFL)/VFL]*100

(b) WITH FILTER:

Ripple factor for a Full-Wave Rectifier is Γ=1/ (2√3 fRC).

Where f =50Hz

C =100µF

R= (1-10) KΩ

Therefore, for 1KΩ, Ripple factor, Γ = 0.0577

% regulation = [(VNL-VFL)/VFL]*100

OBSERVATIONS:

(a) WITH OUT FILTER:

VNL = V
Load
S.No Resistance Vac(v) Vdc(v) Γ= Vac/ Vdc % Regulation
(KΩ)

Dept. of ECE 14
 ELECTRONIC DEVICES & CIRCUITS LAB

(b) WITH FILTER: VNL = V

PRECAUTIONS:

Load
S.No Resistance Vac(v) Vdc(v) Γ= Vac/ Vdc % Regulation
(KΩ)

1. The primary and secondary sides of the transformer should be carefully identified.
2. The polarities of the diode should be carefully identified.
3. While determining the % regulation, first Full load should be applied and then it should be
decremented in steps.

RESULT:
The Ripple factor and the % regulation for the Full-Wave Rectifier with and without filters are
calculated.
1. The Ripple factor of Full-Wave Rectifier without filter is
2. The Ripple factor of Full-Wave Rectifier with filter is
3. The % Regulation of Full-Wave Rectifier without filter is
4. The % Regulation of Full-Wave Rectifier with filter is

Dept. of ECE 15
 ELECTRONIC DEVICES & CIRCUITS LAB

Experiment -4
INPUT AND OUTPUT CHARACTERISTICS OF BJT IN CE CONFIGURATION

AIM: 1. To draw the input and output characteristics of transistor connected in CE

Configuration
2. To find Input Resistance (Ri), Output Resistance (Ro) and Current amplification
Factor (β) of the given transistor.
APPARATUS:

S.No Name of the Apparatus Range Quantity

1 Transistor (BC-107) 1
2 Resistors 1KΩ, 470Ω 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeters (0-200)μA/(0-200)mA 2
6 Digital Voltmeters (0-20)V DC 2
7 Connecting Wires As Required

THEORY:
A transistor is a three terminal device. The terminals are emitter, base, collector. In
common emitter configuration, input voltage is applied between base and emitter terminals and
out put is taken across the collector and emitter terminals. Therefore the emitter terminal is
common to both input and output.
The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased. As compared to CB
arrangement IB increases less rapidly with VBE. Therefore input resistance of CE circuit is higher
than that of CB circuit.
The output characteristics are drawn between Ic and VCE at constant IB. the collector
current varies with VCE unto few volts only. After this the collector current becomes almost
constant, and independent of VCE. The value of VCE up to which the collector current changes
with V CE is known as Knee voltage. The transistor always operated in the region above Knee
voltage, IC is always constant and is approximately equal to IB. The current amplification factor
of CE configuration is given by β = ΔIC/ΔIB

Dept. of ECE 16
 ELECTRONIC DEVICES & CIRCUITS LAB

CIRCUIT DIAGRAM:

PROCEDURE:

(i) INPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage VCE is kept constant at 1V and
for different values of VBE, note down the values of IB.
3. Repeat the above step by keeping VCE at 2V and 3V.
4. Tabulate all the readings.
5. Plot the graph between VBE on x-axis and IB on y-axis forconstant VCE.

(ii) OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram.
2. For plotting the output characteristics the input current IB is kept constant at 50μA and for
different values of VCE, note down the values of IC.
3. Repeat the above step by keeping IB at 75μA and 100μA.
4. Tabulate the all the readings.
5. Plot the graph between VCE on x-axis and IC on y-axis for constant IB.

Dept. of ECE 17
 ELECTRONIC DEVICES & CIRCUITS LAB

OBSERVATIONS:

(i) INPUT CHARACTERISTICS:

VCE = 1V VCE = 2V VCE = 3V

S.No
VBE (V) IB (μA) VBE (V) IB (μA) VBE (V) IB (μA)

(ii) OUTPUT CHARACTERISTICS:

IB = 50 μA IB = 75 μA IB = 100 μA
S.No
VCE (V) IC (mA) VCE (V) IC( mA) VCE(V) IC (mA)

Dept. of ECE 18
 ELECTRONIC DEVICES & CIRCUITS LAB

MODEL GRAPH:
(i) INPUT CHARACTERISTICS:

(ii) OUTPUT CHARACTERISTICS:

Dept. of ECE 19
 ELECTRONIC DEVICES & CIRCUITS LAB

PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead
to damage the transistor.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the transistor.

CALCULATIONS:
1. Input resistance: To obtain input resistance find ΔVBE and ΔIB at constant VCE on one
of the input characteristics. Then
Ri = ΔVBE / ΔIB (VCE constant)
2. Output resistance: To obtain output resistance, find ΔIC and ΔVCE at constant IB.
Ro = ΔVCE / ΔIC (IB constant)
3. The current amplification factor of CE configuration is given by
β = ΔIC/ΔIB

RESULT: The input and output characteristics of a transistor in CE configuration are drawn.
The Input (Ri) and Output resistances (Ro) and  of a given transistor are calculated.
1. The Input resistance (Ri) of a given Transistor is
2. The Output resistance (Ro) of a given Transistor is
3. The Current amplification factor is

Dept. of ECE 20
 ELECTRONIC DEVICES & CIRCUITS LAB

Experiment -5
INPUT AND OUTPUT CHARACTERISTICS OF FE IN CS CONFIGURATION

AIM: 1. To draw the Drain and Transfer characteristics of a given FET in CS

Configuration.
2. To find the drain resistance (rd), amplification factor (μ) and Trans-Conductance
(gm) of the given FET.
APPARATUS:

S.No Name of the Apparatus Range Quantity

1 JFET (BFW-10) 1
2 Resistors 100KΩ, 100Ω 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)mA 1
6 Digital Voltmeter (0-20)V DC 2
7 Connecting Wires As Required

THEORY:
A FET is a three terminal device, having the characteristics of high input impedance and
less noise, the Gate to Source junction of the FET s always reverse biased. In response to small
applied voltage from drain to source, the n-type bar acts as sample resistor, and the drain current
increases linearly with VDS. With increase in ID the ohmic voltage drop between the source and
the channel region reverse biases the junction and the conducting position of the channel begins
to remain constant. The VDS at this instant is called “pinch of voltage”.
If the gate to source voltage (VGS) is applied in the direction to provide additional
reverse bias, the pinch off voltage ill is decreased. In amplifier application, the FET is always
used in the region beyond the pinch-off.
IDS=IDSS (1-VGS/VP)2

Dept. of ECE 21
 ELECTRONIC DEVICES & CIRCUITS LAB

CIRCUIT DIAGRAM:

PROCEDURE:
1. All the connections are made as per the circuit diagram.
2. To plot the drain characteristics, keep VGS constant at 0V.
3. Vary the VDD and observe the values of VDS and ID.
4. Repeat the above steps 2, 3 for different values of VGS at -1V and -2V.
5. All the readings are tabulated.
6. To plot the transfer characteristics, keep VDS constant at 0.5V.
7. Vary VGG and observe the values of VGS and ID.
8. Repeat steps 6 and 7 for different values of VDS at 1V and 1.5V.
9. The readings are tabulated.
10. From drain characteristics, calculate the values of drain resistance (rd) by using the formula
rd =∆VDS/∆ID
11. From transfer characteristics, calculate the value of trans-conductance (gm) by using the
formula
gm = ∆ID/∆VGS
12. Amplification factor (μ) = drain resistance (rd) x Trans-conductance (gm)
μ = ∆VDS/∆VGS

Dept. of ECE 22
 ELECTRONIC DEVICES & CIRCUITS LAB

OBSERVATIONS:

(i) DRAIN CHARACTERISTICS:

S.No VGS = 0V VGS = -1V VGS = -2V

VDS (V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)

(ii) TRANSFER CHARACTERISTICS:

S.No VDS =0.5V VDS=1V VDS =1.5V

VGS (V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)

Dept. of ECE 23
 ELECTRONIC DEVICES & CIRCUITS LAB

MODEL GRAPH:

(i) DRAIN CHARACTERISTICS:

(ii) TRANSFER CHARACTERISTICS:

Dept. of ECE 24
 ELECTRONIC DEVICES & CIRCUITS LAB

PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the FET. This may lead to
damage the FET.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as
per the circuit diagram.
4. Make sure while selecting the Source, Drain and Gate terminals of the FET.

RESULT:
1. The drain and transfer characteristics of a given FET are drawn.
2. The drain resistance (rd), amplification factor (μ) and Trans-conductance (gm) of the
given FET are calculated.
(i) The drain resistance (rd) of FET is _
(ii) Trans-conductance (gm) of FET is
(iii) Amplification factor (μ) of FET is

Dept. of ECE 25
 ELECTRONIC DEVICES & CIRCUITS LAB

Experiment-6
Common Emitter Amplifier characteristics
AIM: 1. To obtain the frequency response of the Common Emitter BJT Amplifier.
2. To Measure the Voltage gain and Bandwidth of CE amplifier.
APPARATUS:
S

S.No Name of the Apparatus Range Quantity

1 Transistor (BC-107) 1
2 Resistors 1KΩ, 4.7KΩ, 10KΩ, 1
15 KΩ , 68 KΩ
3 Capacitors 10µF 2
47 µF 1
4 Bread Board 1
5 Regulated Power Supply (0-30)V DC 1
6 Function Generator (100-1M)Hz 1
7 CRO (100-20M)Hz 1
7 Connecting Wires As Required

THEORY:

The CE amplifier provides high gain &wide frequency response. The emitter lead is
common to both input & output circuits and is grounded. The emitter-base circuit is forward
biased. The collector current is controlled by the base current rather than emitter current. The
input signal is applied to base terminal of the transistor and amplifier output is taken across
collector terminal. A very small change in base current produces a much larger change in
collector current. When +ve half-cycle is fed to the input circuit, it opposes the forward bias of
the circuit which causes the collector current to decrease, it decreases the voltage more –ve. Thus
when input cycle varies through a -ve half-cycle, increases the forward bias of the circuit, which
causes the collector current to increases thus the output signal is common emitter amplifier is in
out of phase with the input signal.

Dept. of ECE 26
 ELECTRONIC DEVICES & CIRCUITS LAB

CIRCUIT DIAGRAM:

PROCEDURE:

1. Connect the circuit as per the circuit diagram.

2. Set Source Voltage Vs = 50mV (say) at 1 KHz frequency, using function generator.
3. Keeping the input voltage constant, vary the frequency from 50Hz to 1MHz in regular
steps and note down the corresponding output voltage.
4. Calculate the Voltage Gain by using the formula
Av = Output voltage (V0) / Input voltage (Vs)

5. Calculate the Voltage Gain in dB by using Voltage Gain Av(dB) = 20 log10 (Vo/Vs).
6. Plot the Graph by taking Voltage gain (dB) on x-axis and frequency (Hz) on y-axis.
7. The Bandwidth of the amplifier is calculated from the graph using the expression,
Bandwidth, BW=f2-f1
Where f1 is lower 3-dB frequency
f2 is upper 3-dB frequency

Dept. of ECE 27
 ELECTRONIC DEVICES & CIRCUITS LAB

OBSERVATIONS:
Vs = V
Input Output
Voltage Voltage Gain (dB)
S.No Frequency Voltage (Vo)
Gain=Vo/Vs =20 log10 (Vo/Vs)
(Hz) (volts)

FREQUENCY RESPONSE:

PRECAUTIONS:
1. While doing the experiment do not exceed the ratings of the transistor. This may lead
to damage the transistor.
2. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
3. Make sure while selecting the emitter, base and collector terminals of the transistor.

RESULT: The Voltage gain and Bandwidth of CE amplifier is measured and the
frequency response of the CE Amplifier is obtained.
1. The Voltage gain of CE Amplifier is .
2. The Bandwidth of CE Amplifier is .

Dept. of ECE 28
 ELECTRONIC DEVICES & CIRCUITS LAB

Experiment-7
SWITCHING CHARACTERISTICS OF A TRANSISTOR
AIM: To design and observe the performance of a transistor as a switch
APPARATUS REQUIRED:
1. Transistor (BC107) - 1 No.
2. Resistor 6.8 kΩ, 33 kΩ, 1kΩ
3. Bread board Trainer
4. Function Generator
5. Cathode Ray Oscilloscope
6. Connecting Wires
CICRUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit as per circuit diagram.
2. Apply square wave of 5V with frequency of 1KHz from function generator.
3. Observe the input and output waveforms.

EXPECTED WAVEFORMS:

RESULT:

Dept. of ECE 29
 ELECTRONIC DEVICES & CIRCUITS LAB

Experiment-8
SCR CHARACTERISTICS
AIM: 1. To draw the V-I characteristics of SCR.
2. To find the Break-over voltage (VBO) and Holding current (IH) of SCR.

APPARATUS:

S.No Name of the Apparatus Range Quantity

1 SCR (TYN616) 1
2 Resistors 1KΩ, 10KΩ 1
3 Regulated Power Supply (0-30)V DC 1
4 Bread Board 1
5 Digital Ammeter (0-200)mA,(0-200)µA 2
6 Digital Voltmeter (0-20)V DC 1
7 Connecting Wires As Required

THEORY:
It is a four layer semiconductor device being alternate of P-type and N-type silicon. It
consists of 3 junctions J1, J2, J3 the J1 and J3 operate in forward direction and J2 operates in reverse
direction and three terminals called anode A, cathode K, and a gate G. The operation of SCR can
be studied when the gate is open and when the gate is positive with respect to cathode. When gate
is open, no voltage is applied at the gate due to reverse bias of the junction J 2 no current flows
through R2 and hence SCR is at cut off. When anode voltage is increased J2 tends to breakdown.

Fig.: Symbol of SCR

When the gate positive, with respect to cathode J3 junction is forward biased and J2 is
reverse biased .Electrons from N-type material move across junction J3 towards gate while holes
from P-type material moves across junction J3 towards cathode. So gate current starts flowing,
anode current increase is in extremely small current junction J 2 break down and SCR conducts
heavily. When gate is open the break over voltage is determined on the minimum forward voltage
at which SCR conducts heavily. Now most of the supply voltage appears across the load
resistance. The holding current is the maximum anode current gate being open, when break over
occurs.

Dept. of ECE 30
 ELECTRONIC DEVICES & CIRCUITS LAB

CIRCUIT DIAGRAM:

PROCEDURE:
1. All the connections are made as per the circuit diagram.
2. Keep the gate current (IG) open i.e. IG = 0 mA.
3. Vary the anode to cathode supply voltage and note down the readings of Voltage VAK (V),
and Current IAK (µA).
4. Now Keep the gate current (IG) at a standard value of 10 mA i.e. IG = 10 mA.
5. Again vary the anode to cathode supply voltage and note down the corresponding readings
of Voltage VAK (V), and Current IAK (mA).
6. Plot the graph by taking VAK (V) on x-axis and Current IAK (mA) on y-axis.
7. Measure the Break-over voltage (VBO) and Holding current (IH) of SCR from the graph.
OBSERVATIONS:

IG = 0 mA IG = 10 mA
S.No VAK (V) IAK (µA) VAK (V) IAK (mA)

Dept. of ECE 31
 ELECTRONIC DEVICES & CIRCUITS LAB

MODEL GRAPH:

PRECAUTIONS:

1. While doing the experiment do not exceed the ratings of the SCR. This may
lead to damage the SCR.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit
diagram.
3. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
4. Make sure while selecting the Anode, Cathode and Gate terminals of the SCR.

RESULT: The V-I characteristics of SCR are drawn and the Break-over
voltage (VBO), Holding current (IH) of SCR are found.
1. The Break-over voltage (VBO) of SCR is .
2. The Holding current (IH) of SCR is .

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Experiment-9
TYPES OF CLIPPERS AT DIFFERENT REFERENCE VOLTAGES

AIM: To observe the output wave form for various types of Clipping circuits.

APPARATUS:
1. Diodes (1N4007) -2 Nos
2. Resistors (1 KΩ -1 No)
3. Function generator
4. Bread board trainer
5. Cathode Ray Oscilloscope (CRO)
6. Connecting Wires.

CIRCUIT DIAGRAM:
1. Shunt Positive Clipper:

2. Shunt Negative Clipper:

3. Shunt Positive clipper with reference voltage

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4. Shunt Negative Clipper with Reference Voltage:

5. Clipping at two reference voltages :

PROCEDURE:
1. Make the circuit connections as per circuit diagram
2. Set the sinusoidal input wave form with magnitude of 5 volts and frequency
of 1KHz in the function generator
3. Apply sinusoidal input from function generator to the circuit.
4. Sketch the respective output waveforms.
5. Repeat above procedure for each circuit.

Result:

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Experiment-10
TYPES OF CLAMPERS AT DIFFERENT REFERENCE
VOLTAGES

AIM: To observe the output wave form for various types of Clamping circuits.

APPARATUS:
1. Diodes (1N4007)-1.No.s
2. Resistors (1 kΩ -1)
3. Capacitor - 10µf
4. Function generator
5. Bread board Trainer
6. Cathode Ray Oscilloscope (CRO)
7. Connecting Wires
CICRUIT DIAGRAM:
1.Positive peak clamper

2. Negative peak clamper

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 ELECTRONIC DEVICES & CIRCUITS LAB

3. Positive peak bias clamper

4. Negative peak bias clamper

PROCEDURE:
1. Make the circuit connections as per circuit diagram
2. Set the sinusoidal input wave form with magnitude of 5 volts and frequency of 1KHz in the
function generator
3. Apply sinusoidal input from function generator to the circuit.
4. Sketch the respective output waveforms.
5. Repeat above procedure for each circuit.

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EXPECTED WAVE FORMS:

RESULT:

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