EC3361-ELECTRONIC CIRCUITS AND DEVICES LABORATORY

IIIrd Semester – B.E – ECE

LIST OF EXPERIMENTS

1. Characteristics of PN Junction Diode and Zener diode.

2. Full Wave Rectifier with Filters.

3. Design of Zener diode Regulator.

4. Common Emitter input-output Characteristics.

5. MOSFET Drain current and Transfer Characteristics.

6. Frequency response of CE and CS amplifiers.

7. Frequency response of CB and CC amplifiers.

8. Frequency response of Cascode Amplifier

9. CMRR measurement of Differential Amplifier

10. Class A Transformer Coupled Power Amplifier.

1
Circuit Diagram:

Model Graph:

2
EXPT NO: 1 (a)
DATE: CHARACTERISTICS OF PN JUNCTION DIODE
AIM:
To plot the V-I characteristics of a PN junction diode in both forward and reverse directions
APPARATUS REQUIRED:
S.No Apparatus Required Range Quantity
1 Regulated power supply 0-30v 1
2 PN junction Diode IN 4007 1
3 Ammeter 0-5mA,0-500uA Each 1
4 Voltmeter 0-15 V 1
5 Resistors 1K 1
6 Connecting wires - As required
7 Bread board - 1
THEORY:
Forward bias:
When the +Ve terminal of the battery is connected to P-type material & -Ve
terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward
biased. The application of forward bias voltage will force electrons in N-type and holes in
P-type material to recombine with the ions near boundary and to flow crossing junction.
This reduces width of depletion region. This further will result in increase in majority
carriers flow across the junction. If forward bias is further increased in magnitude the
depletion region width will continue to decrease, resulting in exponential rise in current as
shown in ideal diode characteristic curve.
Reverse bias:
If the negative terminal of battery (DC power supply) is connected with P-type
terminal of diode and +Ve terminal of battery connected to N type then diode is said to be
reverse biased. In this condition the free charge carriers (i.e. electrons in N-type and holes
in P-type) will move away from junction widening depletion region width. The minority
carriers (i.e. –ve electrons in p-type and +ve holes in n-type) can cross the depletion region
resulting in minority carrier current flow called as reverse saturation current(Is). As no of
minority carrier is very small so the magnitude of Is is few microamperes. Ideally current
in reverse bias is zero. In short, current flows through diode in forward bias and does not
flow through diode in reverse bias. Diode can pass current only in one direction.

3
4
TABULATION: Forward Bias:
S.No Supply Diode voltage(v) Diode
Voltage(V) current(mA)

Reverse bias:
S.No Supply Diode voltage(v) Diode
Voltage(V) current(mA)

5
PROCEDURE:
 Connect the power supply, voltmeter, current meter with the diode as shown in the
figure for forward bias diode. You can use two multimeter (one to measure current
through diode and other to measure voltage across diode)
 Increase voltage from the power supply from 0V to 20V in step as shown in the
observation table
 Measure voltage across diode and current through diode. Note down readings in
the observation table.
 Reverse DC power supply polarity for reverse bias
 Repeat the above procedure for the different values of supply voltage for reverse
bias
 Draw VI characteristics for forward bias and reverse bias in one graph

RESULT:

6
Circuit Diagram:

Model Graph:

7
EXPT NO: 1 (b)
DATE: CHARACTERISTICS OF ZENER DIODE
AIM:
To plot the V-I characteristics of a Zener diode in both forward and reverse directions
APPARATUS REQUIRED:
S.No Apparatus Required Range Quantity
1 Regulated power supply 0-30v 1
2 Zener Diode 1
3 Ammeter 0-5mA,0-500uA Each 1
4 Voltmeter 0-15 V 1
5 Resistors 1K 1
6 Connecting wires - As required
7 Bread board - 1

THEORY:
The Zener diode is designed to operate in reverse breakdown region. Zener diode is used
for voltage regulation purpose. Zener diodes are designed for specific reverse breakdown
voltage called Zener breakdown voltage (VZ). The value of VZ depends on amount of
doping. Breakdown current is limited by power dissipation capacity of the zener diode. If
power capacity of the Zener is 1 W and Zener voltage is 10V, highest reverse current is
0.1A or 100 mA. If current increases more than this limit, diode will be damaged. Forward
characteristics of the Zener diode is similar to normal PN junction diode.
PROCEDURE:
 Connect the power supply, voltmeter, current meter with the diode as shown in the
figure for reverse bias. You can use two multimeter
 Increase voltage from the power supply from 0V to 20V in step as shown in the
observation table
 Measure voltage across diode and current through diode. Note down readings in
the observation table.
 Reverse DC power supply polarity for forward bias

8
  Repeat the above procedure for the different values of supply voltage for reverse
bias
 Draw VI characteristics for reverse bias and forward bias in one graph
TABULATION: Forward Bias:
S.No Supply Diode voltage(v) Diode
Voltage(V) current(mA)

Reverse bias:
S.No Supply Diode voltage(v) Diode current(mA)
Voltage(V)

9
PROCEDURE:
 Connect the power supply, voltmeter, current meter with the zener diode as shown
in the figure for forward bias diode. You can use two multimeter (one to measure
current through zener diode and other to measure voltage across zener diode)
 Increase voltage from the power supply from 0V to 20V in step as shown in the
observation table
 Measure voltage across zener diode and current through diode. Note down
readings in the observation table.
 Reverse DC power supply polarity for reverse bias
 Repeat the above procedure for the different values of supply voltage for reverse
bias
 Draw VI characteristics for forward bias and reverse bias in one graph

RESULT:

10
Circuit Diagram:

Model graph:

11
Exp.No:02
FULLWAVE RECTIFIER WITH FILTER
Date:

AIM:
To construct a full wave rectifier using diode. Examine the input and output waveforms of
a full wave (center tapped) rectifier with filters. Calculate the ripple factor and efficiency
APPARATUS REQUIRED:

Sl. Apparatus Range / Quantity

No. Specification
1. Diode IN 4007 2
2. Transformer 230V/ 0-9V 1
3. Resistors 1K 1

4. Capacitors 100uF/16V, 470uF/25V Each 1

5. Function Generator (0-5)MHz 1
6. CRO (0-30)MHz 1

7. Connecting Wires As required

8. Function generator (0-20)MHz 1

THEORY:

 The output of a rectifier is pulsating dc voltage.

 Filtering is necessary because electronic circuits require a constant source of dc
voltage and current to provide power and biasing for proper operation.
 A power supply filter eliminates the fluctuations in the output voltage of a full-wave
rectifier and produces a constant source of dc voltage.
 The voltage fluctuation in the filtered waveform is called ripple voltage.
 Filters are implemented with capacitors and inductors.

12
TABULATION:

Without Filter
Vin Vrms Vdc Ripple Factor Efficiency

With Filter

Vin Vrms Vdc Ripple Factor Efficiency

PROCEDURE:

 Connecting the circuit on bread board as per the circuit diagram

 Connect the primary of the transformer to main supply i.e. 230V, 50Hz
 Connect the decade resistance box and set the RL value to 100Ω
 Connect the multimeter at output terminals and vary the load resistance (DRB)
from 100Ω to 1KΩ and note down the Vac and Vdc as per given tabular form
 Disconnect load resistance ( DRB) and note down no load voltage Vdc (V no load)
 Connect load resistance at 1KΩ and connect Channel – II of CRO at output
 Terminals and CH – I of CRO at Secondary Input terminals observe and note
down the Input and Output Wave form on Graph Sheet.

RESULT:

13
Circuit Diagram:

MODEL GRAPH:

14
EXPT NO:2(a)
DATE: CHARACTERISTICS OF CE CONFIGURATION USING BJT

AIM:

To plot the transistor characteristics of CE configuration.

APPARATUS REQUIRED:

S.NO NAME OF APPARATUS RANGE TYPE QUANTITY

Single
1. DC Regulated Power Supply (0-30)V 2
Variable
2. (0-10)mA MC Each 1
Ammeter
3. (0-250)μA
4. (0-1)V MC Each 1
Voltmeter
5. (0-30)V
6. Transistor BC107 NPN 1
1KΩ,
7. Resistor - 1
10KΩ
8. Bread board - - 1
9. Connecting wires - - As Required

THEORY:

In a common base configuration, base terminal is common between input and

output. The output is taken from collector and the input voltage is applied between emitter
and base. The base is grounded because it is common. To obtain output characteristics, we
wil l measure collector current for different value of collector to base voltage (VCB). Input
current is emitter current Ie and input voltage is Veb. To plot input characteristics we wi ll
plot Veb versus Ie . Current gain for CB configuration is less than unity. CB configuration
is used in common base amplifier to obtain voltage gain. Output impedance of common
base configuration is very high. CB amplifier is used in multi-stage amplifier where
impedance matching is required between different stages.

15
TABULATION:

INPUT CHARACTERISTICS:

VCE = 5V VCE = 10V

S.NO
VBE (V) IB (A) VBE (V) IB (A)

OUTPUT CHARACTERSITICS:

IB = 20 (A) IB = 30 (A)
S.NO
VCE (V) IC (A) VCE (V) IC (A)

16
PROCEDURE:

INPUT CHARACTERISTICS:

 Connect the circuit as per the circuit diagram.

 Set VCE, vary VBE in regular interval of steps, and note down the corresponding IB
reading. Repeat the above procedure for different values of VCE.
 Plot the graph: VBE versus IB for a constant VCE.

OUTPUT CHARACTERISTICS:

 Connect the circuit as per the circuit diagram.

 Set IB, vary VCE in regular interval of steps and note down the corresponding IC
reading. Repeat the above procedure for different values of IB.
 Plot the graph: VCE versus IC for a constant IB.

RESULT:

17
18
19
Circuit Diagram:

MODEL GRAPH:

INPUT CONFIGURATION OUTPUT CONFIGURATION

20
EXPT NO: 2 (b)
DATE: CHARACTERISTICS OF CB CONFIGURATION USING BJT

AIM:

To plot the transistor characteristics of CB configuration.

APPARATUS REQUIRED:

S.NO NAME OF APPARATUS RANGE TYPE QUANTITY

Single
1. DC Regulated Power Supply (0-30)V 2
Variable
2. (0-10)mA MC Each 1
Ammeter
3. (0-250)μA
4. (0-1)V MC Each 1
Voltmeter
5. (0-30)V
6. Transistor BC107 NPN 1
1KΩ,
7. Resistor - 1
10KΩ
8. Bread board - - 1
9. Connecting wires - - As Required

THEORY:

A BJT is a three terminal two – junction semiconductor device in which the

conduction is due to both the charge carrier. Hence it is a bipolar device and it amplifier
the sine waveform as they are transferred from input to output. BJT is classified into two
types – NPN or PNP. A NPN transistor consists of two N types in between which a layer
of P is sandwiched. The transistor consists of three terminal emitter, collector, and base.
The emitter layer is the source of the charge carriers and it is heartily doped with a
moderate cross sectional area. The collector collects the charge carries and hence moderate
doping and large cross sectional area. The base region acts a path for the movement of the
charge carriers. In order to reduce the recombination of holes and electrons the base region
is lightly doped and is of hollow cross sectional area. Normally the transistor operates with
the EB junction forward biased. In transistor, the current is same in both junctions, which
indicates that there is a transfer of resistance between the two junctions. One to this fact
the transistor is known as transfer resistance of transistor.

21
TABULATION:

INPUT CHARACTERISTICS:

VCE = 5V VCE = 10V

S.NO
VEB (V) IE (A) VEB (V) IC (A)

OUTPUT CHARACTERSITICS:

IE = 1 mA IE=10mA IB = 30 mA
S.NO VCB
VCB (V) IC VCB (V) IC IC
(V)

22
PROCEDURE:

INPUT CHARACTERISTICS:

 Connect circuit as shown in the circuit diagram for input characteristics

 Connect variable power supply 0-30V (VEE) at emitter base circuit and another
power supply 0-30V at collector base circuit (Vcc).
 Keep Vcc fix at 0V (Or do not connect Vcc)
 Increase VEE from 0V to 20V, note down readings of emitter current Ie and
emitter to base voltage Veb in the observation table.
 Repeat above procedure for Vcc = +5V and Vcc = +10V
 Draw input characteristics curve. Plot Veb on X axis and Ie on Y axis.
OUTPUT CHARACTERISTICS:

 Connect circuit as shown in the circuit diagram for output characteristics

 Connect variable power supply 0-30V at emitter circuit and collector circuit.
 Keep emitter current fix (Initially 0)
 Increase VCC from 0V to 30V, note down readings of collector current Ic and
collector to base voltage Vcb in the observation table.
 Repeat above procedure for base currents Ie = 1mA, 5 mA and 10mA. Increase
emitter current by increasing VEE.
 Draw output characteristics curve. Plot Vcb on X axis and Ic on Y axis.

RESULT:

23
24
25
Circuit Diagram:

26
EXPT NO: 2 (C)
DATE: CHARACTERISTICS OF CC CONFIGURATION USING BJT

AIM:

To plot the transistor characteristics of CC configuration.

APPARATUS REQUIRED:

S.NO NAME OF APPARATUS RANGE TYPE QUANTITY

Single
1. DC Regulated Power Supply (0-30)V 2
Variable
2. (0-10)mA MC Each 1
Ammeter
3. (0-250)μA
4. (0-1)V MC Each 1
Voltmeter
5. (0-30)V
6. Transistor BC107 NPN 1
1KΩ,
7. Resistor - 1
10KΩ
8. Bread board - - 1
9. Connecting wires - - As Required

THEORY:

A BJT is a three terminal two – junction semiconductor device in which the

conduction is due to both the charge carrier. Hence it is a bipolar device and it amplifier
the sine waveform as they are transferred from input to output. BJT is classified into two
types – NPN or PNP. A NPN transistor consists of two N types in between which a layer
of P is sandwiched. The transistor consists of three terminal emitter, collector, and base.
The emitter layer is the source of the charge carriers and it is heartily doped with a
moderate cross sectional area. The collector collects the charge carries and hence moderate
doping and large cross sectional area. The base region acts a path for the movement of the
charge carriers. In order to reduce the recombination of holes and electrons the base region
is lightly doped and is of hollow cross sectional area. Normally the transistor operates with
the EB junction forward biased. In transistor, the current is same in both junctions, which
indicates that there is a transfer of resistance between the two junctions. One to this fact
the transistor is known as transfer resistance of transistor.

27
TABULATION:

OUTPUT CHARACTERISTICS:

IE = A IE = A
S.NO
VCB (V) IC (mA) VCB (V) IC (mA)

INPUT CHARACTERSITICS:

VCE = V VCE = V

S.NO VBC
VBC (V) IB(uA) IB (uA)
(V)

28
PROCEDURE:

INPUT CHARACTERISTICS:

 Connect the circuit as per the circuit diagram.

 Set VCE, vary VBC in regular interval of steps, and note down the corresponding IB
reading. Repeat the above procedure for different values of VCE.
 Plot the graph: VBC versus IB for a constant VCE.

OUTPUT CHARACTERISTICS:

 Connect the circuit as per the circuit diagram.

 Set IB, vary VCE in regular interval of steps and note down the corresponding IC
reading. Repeat the above procedure for different values of IB.
 Plot the graph: VCE versus IC for a constant IB.

RESULT:

29
30
31
Circuit Diagram:

Model Graph:

32
EXPT NO: 3 CHARACTERISTICS OF JUNCTION FIELD EFFECT TRANSISTOR
DATE:
AIM:

To Plot the characteristics of given FET & determine rd, gm, μ, IDSS,VP .

APPARATUS REQUIRED:

S.NO NAME OF APPARATUS RANGE TYPE QUANTITY

Single
1. DC Regulated Power Supply (0-30)V 2
Variable
2. Ammeter (0-30)mA MC 1
(0-10)V
3. Voltmeter MC Each 1
(0-30)V
4. FET BFW10 - 1
5. Resistor 470Ω - 2
6. Bread board - - 1
7. Connecting wires - - As Required

THEORY:

FET is a voltage-operated device. It has three terminals. They are Source, Drain &
Gate. When the gate is biased negative with respect to the source, the pn junctions are
reverse biased & depletion regions are formed. The channel is more lightly doped than the
p type gate, so the depletion regions penetrate deeply in to the channel. The result is that
the channel is narrowed, its resistance is increased, & ID is reduced. When the negative
bias voltage is further increased, the depletion regions meet at the center & ID is cutoff
completely.

PROCEDURE:

DRAIN CHARACTERISTICS:
 Connect the circuit as per the circuit diagram.
 Set the gate voltage VGS= 0V.
 Vary VDS in steps of 1V and note down the corresponding ID.
 Repeat the same procedure for V GS = -1V.
 Plot the graph VDS versus ID for constant VGS.

33
DRAIN CHARACTERISTICS:

VGS = V VGS = V VGS = V

S.N
O VDS
VDS (V) ID (mA) VDS (V) ID (mA) ID (mA)
(V)

OUTPUT CHARACTERSITICS:

VDS = V VDS = V
S.NO
VGS (V) ID (mA) VGS (V) ID (mA)

34
OBSERVATIONS:

 DC (static) Drain resistance , rD =VDS/ID

 AC (Dynamic) Drain resistance , rd =∆VDS/∆ID
 Open source Impedance ,YOS= 1/ rd
TRANSFER CHARACTERISTICS:

 Connect the circuit as per the circuit diagram.

 Set the drain voltage VDS= 5V.
 Vary VGS in steps of 1V and note down the corresponding ID.
 Repeat the same procedure for V DS = 10V.
 Plot the graph VGS versus ID for constant VDS.
OBSERVATIONS:

RESULT:

35
36
37
Circuit Diagram:

Model Graph:

38
EXPT NO: 4
CHARACTERISTICS OF UNIJUNCTION TRANSISTOR
DATE:
AIM:
To obtain the V-I characteristics of UJT and plot its input negative resistance
Characteristics also to find its Intrinsic Standoff Ratio

APPARATUS REQUIRED:

S.NO NAME OF APPARATUS RANGE TYPE QUANTITY

Single
1. DC Regulated Power Supply (0-30)V 2
Variable
2. Ammeter (0-30)mA MC 1
(0-10)V
3. Voltmeter MC Each 1
(0-30)V
4. UJT 2N2646 - 1
5. Resistor 330Ω, 3.3K - Each 1
6. Bread board - - 1
7. Connecting wires - - As Required

THEORY:
UJT is the Uni Junction Transistor. It is a three terminal device. They are: a)
emitter b) base1 c)base2.The equalent circuit is shown with the circuit diagram. So
there are two resistors. One is a variable resistor and other is a fixed resistor. The ratio of
internal resistances is referred as intrinsic standoff ratio (η).It is defined as the ratio of the
variable resistance to the total resistance. Due to the existing pn junction, there will be a
voltage drop. If we apply a voltage to the emitter, the device will not turn on until the input
voltage is less than the drop across the diode plus the drop at the variable resistance
R1.When the device is turned on holes moves from emitter to base resulting in a current
flow. Due to this sudden increase in charge concentration in base1 region conductivity
increases. This causes a drop at base1.This region in the graph is known as negative
resistance region. If we further increase the emitter voltage the device undergoes
saturation. So a UJT has 3 operating regions:
 cut off region
 negative resistance region
 saturation region

39
TABULATION:
S.No VBB VBB
Vs IE (mA) Vs IE (mA)

40
PROCEDURE:
1. Connect the circuit as shown in above figure.
2. Keep VBB = 5V, Vary VEE smoothly with fine control such that VE Varies in steps
of
0.5 volts from zero and note down the resulting emitter current IE for each step in
the
tabular form.
3. Repeat the experiment for VBB = 7V and for VBB = 10V.
4. Draw the graph between VE Vs IE by keeping VBB constant.

RESULT:

41
42
43
Circuit Diagram:

CE Amplifier without Feedback:

CE Amplifier with Feedback:

44
EXPT NO: 5 DESIGN AND FREQUENCY RESPONSE CHARACTERISTICS OF A COMMON EMIT
DATE:
AIM:
To Design and Construct a Common Emitter Amplifier using voltage divider bias.
APPARATUS REQUIRED:

S. No Requirement Name Range Quantity

1 Transistor [Active] BC 107 1

Components 61KΩ,10 KΩ,1

2 Resistor [Passive] 1,1,1,2
KΩ,4.7 KΩ

3 Capacitor [Passive] 10 µf,100µf 2,1

4 Signal Generator (0 - 3)MHz 1

5 Equipment CRO 30MHz 1

6 Regulated Power supply (0 - 30)V 1

7 Bread Board - 1
Accessories
8 Connecting Wires Single Stand as required

DESIGN PROCEDURE:
Given specifications:
VCC= 10V, IC=1.2mA, AV= 30, hFE= 100
(i) To calculate RC:
The voltage gain is given by,
AV= -hfe (RC|| RF) / hie
h ie = β re
re = 26mV / IE = 26mV / 1.2mA = 21.6Ω
hie = 150 x 21.6 =3.2KΏ

45
MODEL GRAPH:

TABULATION [Without Feedback ] :

Input voltage (Vin=V MSH/2) = V

Output Voltage [ VO] in Gain= 20 log Vo/Vin

S. No Frequency [Hz]
Volts dB
1 0
2 100
3 500
4 600
5 800
6 900
7 1000
8 1KHz
9 100 KHz
10 500 KHz
11 600 KHz
12 700 KHz
13 800 KHz
14 900 KHz
15 1MHz
16 1.1MHz

46
 Apply KVL to output loop,
VCC= IC RC + VCE+ IE RE-------(1)
Where VE = IE RE (IC= IE)
VE= VCC / 10= 1V
Therefore RE= 1/1.2x10-3=0.8K= 1KΏ
VCE= VCC/2= 5V
From equation (1), RC= ( Vcc - VCE - IE RE / IC ) =

(ii) To calculate R1&R2:

S=1+ (RB/RE)
Where RE = 1 KΏ and S = 9
RB= (S-1) RE= (R1 || R2) =1KΏ
RB=( R 1R2 ) /( R1+ R2)---------(2)
VB= VBE + VE = 0.7+ 1= 1.7V
VB= VCC (R2 / R1+ R2 )--------(3)
Solving equation (2) & (3),
R1= & R2=
(iii) Input coupling capacitor :
Xci= Rif / 10= 2.4 Ω (since XCi << Rif)
Ci = 1/ 2пfXCi =
(iv) Output coupling capacitor:
XCO= Rof /10= 5.2 Ω
CO = 1/ 2пfXCO =

THEORY:
 A common emitter amplifier is type of BJT amplifier which increases the
voltage level of the applied input signal Vin at output of collector.
 The CE amplifier typically has a relatively high input resistance (1 - 10 KΩ) and a
fairly high output resistance. Therefore it is generally used to drive medium to
high resistance loads. It is typically used in applications where a small voltage
signal needs to be amplified to a large voltage signal like radio receivers.

47
 With Feedback:
Input voltage (Vin=V MSH/2) = V

S. No Frequency [Hz] Output Voltage [ VO] in Gain= 20 log Vo/Vin

Volts dB
1 0
2 100
3 500
4 600
5 800
6 900
7 1000
8 1KHz
9 100 KHz
10 500 KHz
11 600 KHz
12 700 KHz
13 800 KHz
14 900 KHz
15 1MHz
16 1.1MHz
17 1.5 MHz

48
  The input signal Vin is applied to base emitter junction of the transistor and
amplifier output Vo is taken across collector terminal. Transistor is maintained at
the active region by using the resistors R1, R2 and Rc. A very small change in
base current produces a much larger change in collector current. The output Vo of
the common emitter amplifier is 180 degrees out of phase with the applied the
input signal Vin.

PROCEDURE:
1. Connect the circuit as per the circuit diagram
2. Determine the Q-point of the CE amplifier using DC analysis.
3. Determine Maximum input voltage that can be applied to CE amplifier using
AC analysis.
4. Set the input voltage Vin=V MSH /2 and vary the input signal frequency from 0Hz
to 1MHz in incremental steps and note down the corresponding output voltage Vo
for at least 20 different values for the considered range.
5. The voltage gain is calculated as Av = 20log (V0/Vi) dB
6. Find the Bandwidth and Gain-Bandwidth Product from Semi-log graph taking
Frequency on x-axis and gain in dB on y-axis.,
Bandwidth, BW = f2-f1
Where f1 lower cut-off frequency
f2 upper cut-off frequency.

RESULT:

49
50
51
Circuit Diagram:

Characteristics of Photodiode Characteristics of

Phototransistor

Model Graph:

Photodiode Phototransistor

52
EXPT NO: 6 CHARACTERISTICS OF PHOTO DIODE & PHOTO TRANSISTOR, STUDY OF LIG

DATE:

AIM:
To plot the characteristics of photo diode and photo transistor.

APPARATUS REQUIRED:

S.NO NAME OF APPARATUS RANGE TYPE QUANTITY

Single
1. DC Regulated Power Supply (0-30)V 2
Variable
2. Ammeter (0-30)mA MC 1
(0-10)V
3. Voltmeter MC Each 1
(0-30)V
4. Photo diode, Photo Transistor - - Each 1
5. Resistor 1K - 2
6. Bread board - - 1
7. Connecting wires - - As Required
THEORY:
Photodiode
 The Photodiode is a semiconductor p-n junction device which operates only
in reverse-bias region.
 When light is applied to the junction, the light energy is transferred to the
atomic structure, resulting in increased number of minority carriers and as a
result the reverse current increases.
 The dark current is that current that exist with no light is applied.
 Photodiodes are used in consumer electronics devices such as compact disc
players, smoke detectors, alarm circuits, counting systems and the receivers for
remote controls in VCRs and televisions

Phototransistor
 Phototransistor has photosensitive collector-base p-n junction.
 The current induced by photoelectric effects is the base current of the transistor.
 An increase in light intensity corresponds to increase in collector current.
 Phototransistors are used in punch-card readers, computer logic circuitry, lighting
control, level indication, relays, and counting systems.

53
TABULATION:

Photo Diode

S.No Diode Voltage VD (V) Diode Current ID (mA)

Photo Transistor:

S.No Collector Emitter Voltage (V) Collector Current (mA)

54
PROCEDURE:

Photodiode Characteristics
1. Connections are given as per the circuit diagram.
2. Place the photodiode in dark light.
3. Vary the power supply voltage in steps of 1V and note down the corresponding
voltage and current.
4. Now allow light to fall on the device and repeat the above step 3.
5. Plot the graph: IR against VR by taking inverse voltage along X-axis and diode
cuurent along Yaxis in third quadrant.
Phototransistor Characteristics
1. Connections are given as per the circuit diagram.
2. Place the phototransistor in dark light.
3. Vary the power supply voltage in steps of 1V and note down the collector-emitter
voltage, VCE and collector current IC.
4. Now allow light to fall on the device and repeat step 3.
5. Plot the graph: IC against VCE for various luminous conditio

RESULT:

55
56
57
Circuit Diagram:

Model Graph:

V out (Voltage)

Time (ms)

58
Exp.No:7(a)
RC PHASE SHIFT OSCILLATOR
Date:

AIM:
To design and construct a RC phase shift oscillator for the given frequency (f0).

APPARATUS REQUIRED:

Sl. APPARATUS Range / Quantity

No. Specification
1. Transistor BC107 2
7.5K1.4K,4.8K,1.2K19K,
2. Resistors 6.5K Each 2
3. Capacitors 1.3uF,2.1uF,0.01uF 2,1,3
4. Function Generator (0-5)MHz 1
5. CRO (0-30)MHz 1
6. RPS (0-30)V 1

7. Connecting Wires As required

8. Function generator (0-20)MHz 1

Theory:

In the RC phase shift oscillator, the required phase shift of 180˚ in the feedback loop from
the output to input is obtained by using R and C components, instead of tank circuit. Here a
common emitter amplifier is used in forward path followed by three sections of RC phase network
in the reverse path with the output of the last section being returned to the input of the amplifier.
The phase shift Ф is given by each RC section Ф=tanˉ1 (1/ωrc). In practice R-value is adjusted
such that Ф becomes 60˚. If the value of R and C are chosen such that the given frequency for the
phase shift of each RC section is 60˚.
Therefore at a specific frequency the total phase shift from base to transistor’s around
circuit and back to base is exactly 360˚ or 0˚. Thus the Barkhausen criterion for oscillation is
satisfied.

59
Tabulation:
Parameters Amplitude Time

60
Design Example:
Specifications:
VCC = 12V, ICq =1mA, β=100, Vceq = 5V, f=1 KHz, S=10, C=0.01 μf, hfe= 330, AV= 29
Design:
(i) To find R:

Assume f=1 KHz, C=0.01μf

f=1/2∏ RC√6
R=1/2x3.14 6 x1x103x0.01x10-6=6.5KΩ
Therefore R=6.5KΩ
(ii) To find RE & RC:

VCE = VCC /2 = 6V
re= 26mV / IE= 26Ω
hie = hfe re= 330 x 26= 8580Ω
On applying KVL to output loop,
VCC=ICRC + VCE + IERE-------(1)
VE = I E R E
RE = VE / IE =1.2/ 10-3 =1.2KΩ
From equation (1), 12= 10-3(RC+ 1200) +6= RC= 4800Ω=4.8KΩ
(iii) To calculate R1 & R2:

VBB= VCC R2 / R1+ R2-------(2)

VB= VBE +VE = 0.7+12 =1.9V
From equation (2), 1.9= 12 R2 / R1+ R2
R2 / R1+ R2= 0.158---------(3)
S = 1+ RB / RE= RB = 1.2KΩ
RB =R1 || R2
0.15R1= 1.2x10-3=7.5KΩ
R2 =0.158 R1 + 0.158 R2, R2= 1.425KΩ
(iv) To calculate Coupling capacitors:

(i) XCi= {[hie + (1+hfe) RE] || RB }/ 10 = 0.12KΩ

XCi= 1 / 2∏ f Ci = 1.3μf
(ii) XCO= RLeff / 10 [ AV = - hfe RLeff / hie]

61
62
RLeff = 0.74KΩ, XCO=0.075 KΩ
XCO= 1 / 2∏ f CO , CO = 2.1μf
(iii) XCE= RE / 10 = 1.326 μf
XCE = 1 / 2∏ f CE=49.27μf
(iv) Feed back capacitor, XCF = Rf / 10
Cf = 0.636μf = 0.01μf

63
64
Procedure:
1. Connections are made as per the circuit diagram.
2. Switch on the power supply and observe the output on the CRO (sine wave).
3. Note down the practical frequency and compare with its theoretical frequency.

RESULT:

65
66
67
Circuit Diagram:

Model Graph:

V out (Voltage)

Time (ms)

68
Exp.No:07(b)
HARTLEY OSCILLATOR
Date:
Aim:

To design and construct the Hartley oscillator for the given frequency.

APPARATUS REQUIRED

Sl. Apparatus Range / Quantity

No. Specification
1. Transistor BC107 2
2. Inductor 10mH 2

3. Resistors 100K,22K,2K,1K 2 each

4. Capacitors 0.1uF,0.01uF,3.2nF 1,2,1
5. Function Generator (0-5)MHz
6. CRO (0-30)MHz 1
7. RPS (0-30)V 1

8. Connecting Wires As required

9. Function generator (0-20)MHz 1

Theory:
Hartley oscillator is a type of sine wave generator. The oscillator derives its initial
output from the noise signals present in the circuit. After considerable time, it gains strength
and thereby producing sustained oscillations. Hartley Oscillator have two major parts
namely – amplifier part and feedback part. The amplifier part has a typically CE amplifier
with voltage divider bias. In the feedback path, there is a LCL network. The feedback
network generally provides a fraction of output as feedback.

69
Tabulation:
Parameters Amplitude Time

70
Design Example:
Design of feed back Network:
Given L1= L2=10mH, f=20 KHz, VCC=12V, IC=3mA, S=12

f = 1/2∏ √(𝐿1 + 𝐿2)𝐶

C= 3.2nf
Amplifier design:
(i) Selection of RC:
Gain formula is,
AV= - hfe RLeff / hie
Assume VCE=VCC/2 (Transistor active)
VCE= 12/2= 6V
VE=IERE= VCC/10=1.2V
VCC=ICRC + VCE + IERE
RC= (VCC- VCE -IERE) / IC
Therefore RC = 1.6KΩ=2 KΩ
(ii) Selection of RE:
IC= IE=3mA
RE= VE/IE
RE= 1.2 / 3x10-3=400 Ω=1KΩ
(iii) Selection of R1 & R2:
Stability factor S=12
S=1+ (RB/ RE)
12=1+ (RB/1x103)
RB=11KΩ
Using potential divider rule,
RB=R1R2 / R1+R2 & VB= (R2/ R1+R2) VCC
RB /R1= R2/ R1+R2
Therefore RB/R1= VB/VCC
VB=VBE+ VE= 0.7+1.2=1.9V=2V
R1= (VCC/ VB )RB
R1= (12/2)x 11x103=66KΩ=100KΩ

71
72
VB/VCC =R2 / R1+R2
2/ 12=R2 / 100x103+R2
(100x103)+R2=R2/0.16=19KΩ
R2=19K=22 K
(iv)Output capacitance (CO):
XCO=RC/10=2x103/10=200
1/2∏fCO=200
CO=1/2x3.14x20x103x200
CO=0.039=0.01μf
(v) Input capacitance (Ci):
XCin= RB/10=11x103/10=1.1x103
1/2∏fCin=1.1x103
Cin=1/2x3.14x20x103x1.1x103
Cin= 0.007=0.01μf
(vi) By pass Capacitance (CE):
XCE=RE/10=1x103/10=100
1/2∏fCE=100
CE= 1/2x3.14x20x103x100
CE = 0.079μf = 0.1μf

73
74
Procedure:
1. Connections are made as per the circuit diagram.
2. Switch on the power supply and observe the output on the CRO (sine wave).
3. Note down the practical frequency and compare with its theoretical frequency.

Result:

75
76
77
Circuit Diagram:

Model Graph:

78
Exp.No:08(a)
HALFWAVE RECTIFIER
Date:

AIM:
To construct a half wave rectifier using diode and draw its performance characteristics.
APPARATUS REQUIRED:

Sl. Apparatus Range / Quantity

No. Specification
1. Diode IN 4007 2
2. Transformer 230V/ 0-9V 1
3. Resistors 1K 1

4. Capacitors 100uF/16V, 470uF/25V Each 1

5. Function Generator (0-5)MHz 1
6. CRO (0-30)MHz 1

7. Connecting Wires As required

8. Function generator (0-20)MHz 1

THEORY:

 The output of a rectifier is pulsating dc voltage.

 Filtering is necessary because electronic circuits require a constant source of dc
voltage and current to provide power and biasing for proper operation.
 A power supply filter eliminates the fluctuations in the output voltage of a half-wave
and full-wave rectifier and produces a constant source of dc voltage.
 The voltage fluctuation in the filtered waveform is called ripple voltage.
 Filters are implemented with capacitors and inductors.

79
TABULATION:

Without Filter
Vin Vrms Vdc Ripple Factor Efficiency

With Filter

Vin Vrms Vdc Ripple Factor Efficiency

80
PROCEDURE:
WITHOUT FILTER:
 Connecting the circuit on bread board as per the circuit diagram
 Connect the primary of the transformer to main supply i.e. 230V, 50Hz
 Connect the decade resistance box and set the RL value to 100Ω
 Connect the Multimeter at output terminals and vary the load resistance
(DRB) from 100Ω to 1KΩ and note down the Vac and Vdc as per given
tabular form
 Disconnect load resistance ( DRB) and note down no load voltage Vdc (V no load)
 Connect load resistance at 1KΩ and connect Channel – II of CRO at output
 terminals and CH – I of CRO at Secondary Input terminals observe and note
down the Input and Output Wave form on Graph Sheet.

RESULT:

81
82
83
Circuit Diagram:

Model graph:

84
Exp.No:08(b)
FULLWAVE RECTIFIER
Date:

AIM:
To construct a half wave rectifier using diode and draw its performance characteristics.
APPARATUS REQUIRED:

Sl. Apparatus Range / Quantity

No. Specification
1. Diode IN 4007 2
2. Transformer 230V/ 0-9V 1
3. Resistors 1K 1

4. Capacitors 100uF/16V, 470uF/25V Each 1

5. Function Generator (0-5)MHz 1
6. CRO (0-30)MHz 1

7. Connecting Wires As required

8. Function generator (0-20)MHz 1

THEORY:

 The output of a rectifier is pulsating dc voltage.

 Filtering is necessary because electronic circuits require a constant source of dc
voltage and current to provide power and biasing for proper operation.
 A power supply filter eliminates the fluctuations in the output voltage of a half-wave
and full-wave rectifier and produces a constant source of dc voltage.
 The voltage fluctuation in the filtered waveform is called ripple voltage.
 Filters are implemented with capacitors and inductors.

85
TABULATION:

Without Filter
Vin Vrms Vdc Ripple Factor Efficiency

With Filter

Vin Vrms Vdc Ripple Factor Efficiency

86
PROCEDURE:
WITHOUT FILTER:
 Connecting the circuit on bread board as per the circuit diagram
 Connect the primary of the transformer to main supply i.e. 230V, 50Hz
 Connect the decade resistance box and set the RL value to 100Ω
 Connect the Multimeter at output terminals and vary the load resistance
(DRB) from 100Ω to 1KΩ and note down the Vac and Vdc as per given
tabular form
 Disconnect load resistance ( DRB) and note down no load voltage Vdc (V no load)
 Connect load resistance at 1KΩ and connect Channel – II of CRO at output
 terminals and CH – I of CRO at Secondary Input terminals observe and note
down the Input and Output Wave form on Graph Sheet.

RESULT:

87
88
89
Circuit Diagram:

Model Graph:

90
Exp.No:09
DIFFERENTIAL AMPLIFIERS USING FET
Date:
AIM:
To design a differential amplifier using JFET. Also plot the frequency response of the
amplifier and to determine the CMRR of the amplifier.
APPARATUS REQUIRED:

Sl. Apparatus Range / Quantity

No. Specification
1. FET BFW10 2
2. Resistors 1K, 10K Each 2

3. Function Generator (0-5)MHz 1

4. CRO (0-30)MHz 1

5. Connecting Wires As required

6. Function generator (0-20)MHz 1

THEORY:
 A differential amplifier is a voltage amplifier that amplifies the difference between the
two input signals.
 It is widely used in analog integrated circuits, because of its good bias stability,
high voltage gain and high input impedance.
 The basic characteristic of differential amplifier is that, it is dc-coupled and avoids the use
of large bypass capacitors.
 FET differential amplifier has higher input impedance than BJT differential amplifier.
 The differential amplifier is said to operate in common-mode configuration when same
voltage is applied to both the input terminals.
 The ability of differential amplifier to reject a common-mode signal defined by its
common-mode Rejection Ratio (CMRR).
 CMRR is expressed as the ration of differential gain to the common-mode gain.

91
TABULATION:
Differential Mode Gain:
S. No Frequency [Hz] Output Voltage [ VO] in Gain= 20 log Vo/Vin
Volts dB
1 0
2 100
3 500
4 600
5 800
6 900
7 1000
8 1KHz
9 100 KHz
10 500 KHz
11 600 KHz
12 700 KHz
13 800 KHz
14 900 KHz
15 1MHz
16 1.1MHz
17 1.5 MHz

Common Mode Gain:

Frequency [Hz] Output Voltage [ VO] in Gain= 20 log Vo/Vin dB
Volts

92
 CMRR = Ad/Ac

PROCEDURE:
 Connections are made as per the circuit diagram shown in figure1.
 The input sine wave signal with appropriate amplitude from the function generator is fed
to the circuit.
 The output is viewed in the CRO and the corresponding differential gain is calculated.
 The frequency of the input signal is varied and the output signal gain is tabulated for
different frequencies.
 A Frequency vs Gain (dB) plot using semilog sheet is plotted and the bandwidth of the
given amplifier is calculated from the plot.
 Connect the circuit as shown in figure2.
 Apply input signal and observe the output using CRO.
 Calculate the common-mode gain.
 Calculate CMRR of the amplifier.

RESULT:

93
94
95
Exp.No:10 STUDY OF CRO FOR FREQUENCY AND PHASE MEASUREMENTS
Date:
AIM:
To observe sine wave, square wave, triangular wave and ramp wave forms on the CRO and
to measure amplitude and frequency of the waveforms
EQUIPMENT USED
30 MHz Dual Channel Cathode Ray Oscilloscope
3 MHz Function Generator
BNC Cables and Probes
THEORY
Introduction
The Cathode Ray Oscilloscope (CRO) provides a visual presentation of any waveform applied to
the input terminal. The oscilloscope consists of the following major subsystems.
 Cathode-ray tube(CRT)
 Vertical amplifier
 Horizontal amplifier
 Sweep Generator
 Trigger circuit
 Associated power supply
It can be employed to measure quantities such as peak voltage, frequency, phase difference, pulse
width, delay time, rise time and fall time.
Cathode Ray Tube (CRT)
The CRT is the heart of the CRO providing visual display of an input signal waveform. A CRT
contains four basic parts:
 An electron gun to provide a stream of electrons.
 Focusing and accelerating elements to produce a well define beam of electrons.
 Horizontal and vertical deflecting plates to control the path of the electron beam.
 An evacuated glass envelope with a phosphorescent screen which glows visibly
when struck by electron beam.

96
TABULATION:
AMPLITUDE FREQUENCY
S.No Type of No of Divisions Voltag Length Time/Division Time F=1/T
signal Divisions D e of one (B) Period Hz
on Y axis V=N*D cycle (A) T=A*B
N (V) (S)
1 Sine
wave
2 Triang
ular
wave
3 Square
wave

97
 The first set of plates is oriented to deflect the electron beam vertically. The angle of the
vertical deflection is determined by the voltage polarity applied to the deflection plates. The
electron beam is also being deflected horizontally by a voltage applied to the horizontal deflection
plates. The tube sensitivity to deflecting voltages can be expressed in two ways that are deflection
factor and deflection sensitivity. The deflected beam is then further accelerated by very high
voltages applied to the tube with the beam finally striking a phosphorescent material on the inside
face of the tube. The phosphor glows when struck by the energetic electrons.
Control Grid: Regulates the number of electrons that reach the anode and hence the brightness of
the spot on the screen.
Focusing anode: Ensures that electrons leaving the cathode in slightly different directions are
focused down to a narrow beam and all arrive at the same spot on the screen.
Electron gun: Cathode, control grid, focusing anode, and accelerating anode.
Deflecting plates: An electric field between the first pair of plates deflects the electrons
horizontally, and an electric field between the second pair deflects them vertically. If no deflecting
fields are present, the electrons travel in a straight line from the hole in the accelerating anode to
the center of the screen, where they produce a bright spot. In general-purpose oscilloscopes,
amplifier circuits are needed to increase the input signal to the voltage levels required to operate
the tube because the signals measured using CRO are
typically small. There are amplifier sections for both vertical and horizontal deflection of the
beam.
Vertical Amplifier: amplify the signal at its input prior to the signal being applied to the vertical
deflection plates.
Horizontal Amplifier: amplify the signal at its input prior to the signal being applied to the
horizontal deflection plates.
Sweep Generator: develop a voltage at the horizontal deflection plate that increase linearly with
time.
Operation
The four main parts of the oscilloscope CRT are designed to create and direct an electron
beam to a screen to form an image. The oscilloscope links to a circuit that directly connects to the
vertical deflection plates while the horizontal plates have linearly increasing charge to form a plot
of the circuit voltage over time. In an operating cycle, the heater gives electrons in the cathode
enough energy to escape. The electrons are attracted to the accelerating anode and pulled through a
98
control grid that regulates the number of electrons in the beam, a focusing anode that controls the
width of the beam, and the accelerating anode itself. The vertical and horizontal deflection plates
create electric fields that bend the beam of electrons. The electrons finally hit the fluorescent
screen, which absorbs the energy from the electron beam and emits it in the form of light to
display an image at the end of the glass tube.
PROCEDURE:
1. Switch on the CRO. Turn the AC-GND-DC to GND. Check if a horizontal trace appears after
the CRO warms up. Set the trace centrally in position on the screen.
2. Become accustomed to the operation of the oscilloscope. Move the focus, intensity, and position
controls to see the effects produced.
Measurement of Frequency
3. Connect the signal generator output to one vertical input of the CRO.
4. Set the function generator in sinusoidal mode and adjust the amplitude of the signal so that it
just about fills the screen.
5. Set the signal generator dial at any particular frequency and move the dial until you have only a
few complete cycles across the CRO face in the horizontal direction.
6. Measure the period T of the signal. To do so, measure (in divisions & subdivisions) the
horizontal distance between two successive peaks and multiply this distance by the reading of the
“TIME/DIV” button which is the scale of the time axis. Record your data.
7. This gives the period T of the AC signal; its frequency is then f = 1/T.
Measurement of Voltage
8. Use the volts/div selector to convert vertical readings on the oscilloscope into actual voltages.
9. In measuring the voltage, always measure the value from the center of the trace to its peak. This
"peak voltage" is half the peak-to-peak voltage, which is the full height of the trace on the CRO
screen.
RESULT:

99
100
101
Circuit Diagram:

Tabulation:

Amplitude TON (ms) TOFF(ms) Frequency

V01

V02

102
Exp.No:11(a)
ASTABLE MULTIVIBRATOR
Date:
AIM:
To design, construct an astable multivibrator for the frequency of 1 KHZ and to plot the
output waveform

APPARATUS REQUIRED:

S.No apparatus Specification Quantit

y
1. Function Generator (0-5)MHz 1
2. Transistor BC 107 2
3. CRO (0-30)MHz 1
4. Resistor 470K,4.7K 2
5. Capacitor 0.01uF 2
6. Power supply (0-30)V 1

THEORY:
Astable multivibrator is also known as free running multivibrator. It is rectangular
wave shaping circuit having non-stable state. This circuit does not need an external
trigger to change state. It consists of two similar NPN transistors. They are capacitor
coupled. It has 2 quasi-stable states. It switches between the two states without any
applications of input trigger pulses. Thus it produces a square wave output without any
input trigger. The time period of the output square wave is given by, T = 1.38RC.
PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Switch on the power supply.
3. Note down the output TON, TOFF and output voltage from CRO.
4. Plot the output waveform in the graph.

103
MODEL GRAPH

104
110
Design example:
Given specifications:
VCC= 10V; hfe = 100; f=1 KHz; I c = 2mA; Vce (sat) = 0.2v;
To design RC:
R ≤ hFE RC
RC= VCC- VC2 (Sat) / IC= 4.9 kΩ
Since R ≤ hFE RC
Therefore R≤ 100 x 4.7 x103=490 kΩ
To Design C:
Since T= 1.38RC
1x10-3=1.38x 490x103x C
Therefore C=0.01μF

111
RESULT:

112
113
114
Circuit Diagram:

115
Exp.No:11(b)
MONOSTABLE MULTIVIBRATOR
Date:

AIM:
To design and construct a monostable multivibrator for the frequency of 1 KHz
and to plot the output waveform.

APPARATUS REQUIRED:

S.N apparatus Specification Quantit

o y
1 Transistor BC 547 2
2 CRO (0-30)MHz 1
3 Resistor 5.9K,452K,10K,100K 2,1,1,1,

4 Capacitor 25pF,3.2nF 1

5 Connecting wires As required

6 Power supply (0-30)V 1

THEORY:
Monostable multivibrator has two states which are (i) quasi-stable state and
(ii) stable state. When a trigger input is given to the monostable multivibrator, it
switches between two states. It has resistor coupling with one transistor. The other
transistor has capacitive coupling. The capacitor is used to increase the speed of
switching. The resistor R2 is used to provide negative voltage to the base so that Q1
is OFF and Q2 is ON. Thus an output square wave is obtained from monostable
multivibrator.

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Switch on the power supply.
3. Observe the output at collector terminals.

4. Trigger Monostable with pulse and note down the output TON, TOFF and voltage
from CRO.
116
5. Plot the waveform in the graph.

117
Design Example:
Given specifications:
VCC= 12V; hfe = 200; f=1 KHz; I c = 2mA; Vce (sat) = 0.2v; VBB= - 2V,
(i) To calculate RC:
RC = VCC - Vce (sat) / IC
RC = 12 – 0.2 / 2x10-3=5.9KΩ
(ii) To calculate R:
IB2(min)=IC2 / hfe= 2x10-3 / 200 = 10μ A
Select IB2 > IB1(min) (say 25μ A)
Then R = VCC – V BE (sat) / IB2
Therefore R= 12-0.7/25x10-6=452KΩ
(iii) To calculate C:
T=0.69RC
1x10-3= 0.69x452x103xC
C=3.2nf
To calculate R1 & R2:
VB1= {(VBB R1/ R1 +R2) + (VCE (sat) R2 / R1+R2)}
Since Q1 is in off state ,VB1 ≤ 0
Then (VBB R1/ R1 +R2) = (VCE (sat) R2 / R1+R2)
VBB R1 = VCE (sat) R2
2 R1 = 0.2 R2
Assume
R1=10KΩ, then R2=100 KΩ
Consider, C1= 25pf (commutative capacitor)

118
119
Model graph:

Tabulation:
Inpu Outpu
t t
Widt
h TON TOFF Voltage TON TOFF Voltage
(ms (ms) (ms) (Volts) (ms) (ms) (Volts)
)

120
Result:

121
122
123
Circuit Diagram:

Model Graph:

124
Exp.No:12
REALIZATION OF PASSIVE FILTERS
Date:
AIM:
To determine experimentally the frequency response of low pass and high pass filters and
note down the cutoff frequency.
APPARATUS REQUIRED:

S. Apparatus Range / Quantity

No. Specification
1. Resistors 1K 1

2. Capacitors 0.1uF 1
3. Function Generator (0-5)MHz 1
4. Inductor 10mH 1
5. CRO (0-30)MHz 1

6. Connecting Wires As required

7. Function generator (0-20)MHz 1

THEORY:
Low pass filter
A Low Pass Filter can be a combination of capacitance, inductance or resistance intended to
produce high attenuation above a specified frequency and little or no attenuation below that
frequency. The frequency at which the transition occurs is called the “cutoff” frequency. The
simplest low pass filters consist of a resistor and capacitor but more sophisticated low pass filters
have a combination of series inductors and parallel capacitors
High pass filter
Where as the low pass filter only allowed signals to pass below its cut-off frequency
point, ƒc, the passive high pass filter circuit as its name implies, only passes signals above the
selected cut-off point, ƒc eliminating any low frequency signals from the waveform.

125
TABULATION:

Output Gain= 20 log

S.No Input Voltage(V) Frequency(Hz)
voltage(V) (Vo/Vin) dB

Output Gain= 20 log

S.No Input Voltage(V) Frequency(Hz)
voltage(V) (Vo/Vin) dB

126
RESULT:

127
PRELAB QUESTIONS:
Exp:1
1. What is semiconductor material? How does it differ from a conductor?
2. Why do we prefer extrinsic semiconductor than intrinsic semiconductors?
3. Define the term drift current?
4. Define the term diffusion current?
5. What is PN junction diode?
6. What is zener break down?
7. Define peak inverse voltage in a diode
8. How the zener diode act as regulator?
9. What are the difference between PN and zener diode?
10. What are the difference between drift current and diffusion current?
Exp:2
1. What is bipolar junction transistor?
2. What are the different configurations of BJT?
3. What is thermal runaway?
4. Define the different operating region of transistor?
5. What is meant by early effect?
6. What is the need for biasing?
7. What is meant by operating point?
8. Define stability factor?
9. What is Q point?
10. Define h parameters?

Exp:3

1. What is a FET?
2. Why FET is called an unipolar device?
3. Define pinch off voltage?
4. Define drain resistance?
5. Why the input impedance of FET is more than that of a BJT?

Exp:4

1. What does UJT stand for? Justify the name UJT.

2. What is “interbase resistance” of UJT?
3. What is meant by negative resistance region of UJT?
4. How does UJT differ from a FET?
5. What are the difference between UJT and BJT?

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Exp:5

1. Compare CC,CE and CB amplifier

2. Draw the h-parameter model of CE amplifier
3. Define bandwidth.
4. What is the use of BW?
5. List the advantages of CE amplifier

Exp:6

1. What is meant by photo diode?

2. What is the output signal of a photodiode?
3. Give the symbol of photo diode
4. How do you reverse bias a photo diode?
5. What is the need of photo diode?
6. What is photo transistor?
7. What is the output signal of a photo transistor?
8. Give the symbol of photo transistor
9. What is the need of photo transistor?
10 Give the properties of photo transistor

Exp:7

1. What is barkhausen criteria?

2.What is the use of oscillator
3.Compare RC and LC oscillator
4.List the types of oscillator
5.What happen if an oscillator fails to satisfy Barkhausen criterion?
6.What is the working principle of tank circuit?
7.What is frequency formula for Hartley Oscillator?
8.Give the general equation of LC Oscillator.
9.A 1 pF capacitor is available. Choose the inductor values in a Hartley oscillator
so that f = 1 MHz and mv= 0.2.
10 what is crystal oscillator?

Exp:8

1 What is the PIV of a bridge wave rectifier?

2 What are the advantages of bridge rectifier over centre tapped
rectifier? 3 What is meant by full wave rectifier?
4 Classify full wave rectifier?
5 What principle is used in FWR?
6 What is peak inverse voltage in FWR?

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 7 What are the disadvantages of full wave rectifier?
8 What are the advantages of bridge rectifier?
9 What are the disadvantages of bridge rectifier?
10 What is bridge rectifier?

Exp:9

1 What is a differential amplifier?

2 What are the applications of difference
amplifier? 3 What are the advantages of
differential amplifier? 4 What is common mode
voltage swing?
5 Define slew rate?
Exp:10

1 What is the function of control grid?

2 What is focusing anode?
3 What is electron gun?
4 What is the use of deflection
plates? 5 What is sweep generator?
Exp:11

1 Write the formula for calculating the total time period in astable multivibrator.
2 Give the formula for frequency of oscillations in astable multivibrator.
3 Give the applications of astable multivibrator
4 What is symmetric astable multivibrator?
5 What is un-symmetric astable multivibrator?
6 What are the other names of monostable Multivibrator?
7 Why is monostable Multivibrator called gating circuit?
8 Why is monostable Multivibrator called delay circuit?
9 Give the uses of monostable multivibrator.
10 Can monostable multivibrator generate a square waveform of its own?

Exp:12

1 Give the circuit for lowpass filter

2 Give the circuit for high pass filter
3 What is meant by bandwidth?
4 What is the use of filter in communication line?
5 How do you select R and C value for filter
design? 6 Compare LPF and HPF
7 List the types of filters
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 8 What is the function of LPF?
9 What is the function of HPF?
10 What are passive filtr?

POSTLAB QUESTIONS:
Exp:1
1. What is depletion region in a PN junction diode?
2. Define the term transition capacitance CT of a diode?
3. Explain the terms knee voltage and breakdown voltage w.r.t. diodes?
4. List the application of PN junction diode?
5. What is avalanche breakdown in PN junction diode?
6. List the applications of zener diode
7. Draw the symbol of PN junction diode.
8. Draw the symbol of zener diode
9. Define zener effect.
10. Define peak inverse voltage in a diode.
Exp:2
1. List out the applications of CB configuration
2. What are the limitations of h parameters?
3. List the advantage of CC configuration?
4. What do you meant by Emitter Follower?
5. List the uses of emitter follower circuit?
6. Comparison of transistor configuration?
7. List the disadvantages of fixed bias method?
8. List the advantages of fixed bias method?
9. What is meant by stabilization?
10. What are the types of breakdown occurs in transistors?
Exp:3
1. Mention the application of FET?
2. What is meant by gate source threshold voltage of a FET?
3. Why N channel FET’s are preferred over P channel FET’s?
4. What is enhancement mode?
5. What is depletion mode?
Exp:4
1. Mention the application of UJT?
2. What is source follower?
3. Why UJT is called unipolar device
4. What is saturation region?
5. What is peak voltage in UJT?

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Exp:5
1. Mention the applications of CE amplifier
2. Give the relation between alpha and beta.
3. What are the limitations of h-parameter
4. List the applications of CC and CB amplifier
5. What are the demerits of CE amplifier?
Exp:6
1 List the applications of photodiode
2 What are the materials used for the fabrication of photo diode?
3 Give the difference between photodiode and phototransistor
4 Differentiate photodiode and LED
5 Mention the applications of photo transistor
6 Can we replace photodiode with ordinary diode?
7 Does photo diode works in forward bias condition?
8 What are the properties of phototransistor?
9 What is the need of photo transistor?
10 Give the limitations of photodiode.
Exp:7
1 List the advantages of RC phase shift oscillator.
2 C =100pf, L1 =30uH & L = 1*10-8H find Frequency of Hartley Oscillator?
3 Define feedback fraction for hartley oscillators?
4 Name the tank circuit components in harley oscillator?
5 What is the frequency of oscillation for hartley oscillators?
6 A 2 pF capacitor is available. Choose the inductor values in a Hartley
oscillator so that f = 1 MHz and mv= 0
7 Comparison between RC Phase shift & Wein Bridge Oscillator.
8 What is the application of RC phase shift oscillator?
9 Draw the output of RC phase shift oscillator.
10 Give the frequency equation of RC phase shift oscillator
Exp:8
1 What is rectifier?
2 What is the function of filters?
3 What is the peak factor
4 What is the difference between half wave and full wave rectifiers?
5 Define ripple factor.
6 List the applications of rectifier
7 What is ripple factor of full wave rectifier?
8 Define peak inverse voltage.
9 What is the necessity of the transformer in the rectifier circuit?

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 10 What is the efficiency of half wave rectifier?
Exp:9
1 Define input off set voltage?
2 What is operational amplifier?
3 Define CMRR
4 What are the terminals of FET
5 What is meant by gain?
Exp:10
1 What is the use of CRO?
2 List the waves generated in CRO.
3 How many vertical plates in CRO?
4 How many horizontal plates in CRO?
5 What is meant by vertical amplifier block?
Exp:11
1 What is an Multivibrator?
2 Give the types of multivibrator circuits
3 Which type of feedback is used in multivibrators
4 Write the formula for calculating the total time period in monostable
multivibrator.
5 Give the formula for frequency of oscillations in monostable multivibrator.
6 How many states are stable in a monostable multivibrator?
7 Draw the diagram for emitter coupled monostable multivibrator.
8 What is the disadvantage of monostable multivibrators?
9 Give the usage of emitter coupled monostable multivibrator.
10 How can the monostable multivibrator can be used as voltage to time converter?
Exp:12
1 What is an ideal LPF?
2 Draw the output model of LPF
3 Draw the output model of HPF
4 What are active filter
5 Differentiate active and passive filters
6 Give the applications of LPF
7 Give the applications of HPF
8 What is band pass filter
9 What is band stop filter
10 Draw the output model of band pass filter.

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