Dr.

/ Abdelhady Ghanem

Power Electronics (1) – ELE221

Dr./ Abdelhady Ghanem

Lec. №: (1)
 Dr./ Abdelhady Ghanem

Department: Electrical Engineering

Name: Dr. Abdelhady Ghanem
Mobile: +2 01009614041
E-mail: aghanem_m@mans.edu.eg
 ‫‪Dr./ Abdelhady Ghanem‬‬

‫محظورات المحاضرة‬

‫‪ -1‬اآلراء السياسية‬

‫‪ -2‬اآلراء الدينية‬

‫‪ -3‬اآلراء الرياضية‬

‫‪ -4‬الكالم الجانبي‬

‫‪ -5‬استخدام الهاتف‬
 Dr./ Abdelhady Ghanem

Course Description
 Dr./ Abdelhady Ghanem

Course Description (cont’)

Points:
➢ Attendance
➢ Reports
➢ Sheets
➢ Quiz + Random Quiz
➢ Mid-Term Exam
➢ Oral Exam/Practical Project
➢ Final Exam
 Dr./ Abdelhady Ghanem

Text Books

Power Electronics
by Daniel W. Hart

Power electronics: converters, applications, and design

by N. Mohan

Power electronics
by P. S. Bimbhra

Power electronics handbook

by M. Rashid
 Dr./ Abdelhady Ghanem

Chapter (1)

Introduction to Power Electronic Systems

 Dr./ Abdelhady Ghanem

Introduction

What is Power Electronics ?

A field of Electrical Engineering that deals with the application of power semiconductor devices for
the control and conversion of electric power.

Sensors
Input source
- Ac
- DC
- Unregulated
Output
- Ac
- DC
Reference

Power Electronic Converters – the heart of power electronics system

 Dr./ Abdelhady Ghanem

Introduction

Power electronics relates to the control and flow of electrical energy.

Control is done using electronic switches, capacitors, magnetics,

and control systems.

Scope of power electronics: milliWatts ⇒ gigaWatts.

Power electronics is a growing field due to the improvement in

switching technologies and the need for more and more efficient
switching circuits.
 Dr./ Abdelhady Ghanem

Introduction

Goal of power electronic systems

To convert electrical energy from
one form to another, i.e. from the
source to load with:
highest efficiency
highest availability
highest reliability
lowest cost
smallest size
least weight.
 Dr./ Abdelhady Ghanem

Introduction

Advantages of Power Electronics System

✓ High efficiency due to low loss in power semiconductor devices.
✓ High reliability of power electronic converter system.
✓ Long life and less maintenance due to absence of any moving parts.
✓ Flexibility in operation
✓ Fast dynamic response compared to electromechanical converter system.
✓ Small size and less weight, thus low installation cost.

Disadvantages of Power Electronics System

➢ Circuits in power electronics system have a tendency to generate harmonics in the supply
system as well as the load circuit.
➢ AC to DC and AC to AC converter operate at low input power factor under certain operating
condition.
➢ Regeneration of power is difficult in power electronic converter system.
➢ Power Electronic controllers have low overhead capacity
 Dr./ Abdelhady Ghanem

Converter Classifications
➢ The objective of a power electronics circuit is to match the voltage and current
requirements of the load to those of the source.
➢ Power electronics circuits convert one type or level of a voltage or current waveform
to another and are hence called converters.

Converters are classified by the relationship between input and output:

AC/DC
Rectifier

AC/AC DC/DC
Converter Converter

DC/AC
Inverter
 Dr./ Abdelhady Ghanem

Converter Classifications
1- AC input/DC output
The AC-DC converter produces a DC output from an AC input. Average power is transferred
from an ac source to a DC load. The AC-DC converter is specifically classified as a rectifier.

2- DC input/AC output

The DC-AC converter is specifically classified as an inverter. In the inverter, average power
flows from the DC side to the AC side.

3- DC input/DC output

The DC-DC converter is useful when a load requires a specified (often regulated) dc voltage or
current but the source is at a different or unregulated DC value and it is classified as choppers.

4- AC input/AC output

The AC-AC converter may be used to change the level and/or frequency of an AC signal.
 Dr./ Abdelhady Ghanem

Applications of Power Electronics

Power electronics is a key technology for transmission, distribution, storage, renewable energy
sources and users sub-systems, and has spread in many applications such as:

Residential: Refrigeration and freezers, Space heating, Air conditioning, Cooking, Lighting, Electronics
(personal computers, other entertainment equipment).

Commercial: Heating, ventilating, and air, conditioning, Central refrigeration, Lighting, Computers and
office equipment, Uninterruptible Power Supplies (UPSs), Elevators.

Industrial: Pumps, Compressors, Machine tools (robots), Arc furnaces, induction furnaces, Lighting,
Industrial lasers, Induction heating, Welding.

Transportation: Traction control of electric vehicles, Battery chargers for electric vehicles, Electric
locomotives, Street cars, trolley buses, Subways, Automotive electronics including engine
controls.

Utility systems: High-voltage dc transmission (HVDC), Static VAR compensation (SVC), Supplemental energy
sources (wind, photovoltaic), fuel cells, Energy storage systems, Induced-draft fans and
boiler, feed water pumps.

Aerospace: Space shuttle power supply systems, Satellite power systems, Aircraft power systems.

Telecommunications: Battery chargers, Power supplies (DC and UPS).

 Dr./ Abdelhady Ghanem

Chapter (2)

Power Semiconductor Devices

 Dr./ Abdelhady Ghanem

Introduction

➢ Electronic switches capable of handling high

voltage and current operations at high frequency
(HF) are the most important devices needed in the
design of energy conversion systems that use
power electronic.

➢ An ideal power electronic switch can be represented

as a three terminals device as shown in the figure;
The input, the output, and a control terminal that
imposes ON/OFF conditions on the switch.
 Dr./ Abdelhady Ghanem

Ideal Switch

A switch is considered ‘‘ideal’’

❑ When the switch is open, it has zero-current through it and can handle
infinite voltage.

❑ When the switch is closed it has zero-voltage across it and can carry
infinite current.

❑ An ideal switch changes condition instantly, which means that it takes

zero-time to switch from ON-to-OFF or OFF-to-ON.

❑ exhibits zero-power dissipation, carries bidirectional current, and can

support bidirectional voltage.

❑ By definition, an ideal switch can operate in all four quadrants.

 Dr./ Abdelhady Ghanem

Real Switch

Practical or real switches do have their limitations in all of the characteristics

explained in an ideal switch.
➢ When a switch is on, it has some voltage across it, known as the on-voltage and it
carries a finite current.
➢ During the off stage, it may carry a small current known as the leakage current
while supporting a finite voltage.
➢ The switching from ON-to-OFF and vice versa does not happen instantaneously.

There is voltage and current across the non-ideal switch

at all times, which will result in two types of losses

➢ The first loss occurs during the on and off-states and is defined as the
‘‘conduction loss’’.

➢ The second loss is defined as the ‘‘switching loss’’ which occurs just as the
switch changes state as either opening or closing. The switch losses result
in raising the overall switch temperature.
 Dr./ Abdelhady Ghanem

Classifications of Power Switches

There are three classes of power switches

Uncontrolled switch: The switch has no control terminal. The state of the
switch is determined by the external voltage or current conditions of the circuit in
which the switch is connected. A diode is an example of such switch.

Semi-controlled switch: In this case the circuit designer has limited

control over the switch. For example, the switch can be turned-on from the control
terminal. However, once ON, it cannot be turned-off from the control signal. The
switch can be switched off by the operation of the circuit or by an auxiliary circuit
that is added to force the switch to turn-off. A thyristor or a SCR is an example of
this switch type.

Fully controlled switch: The switch can be turned ON and OFF via the
control terminal. Examples of this switch are the BJT, the MOSFET, the IGBT, the
IGCT, the GTO thyristor, and the MOS-controlled thyristor (MCT).
 Dr./ Abdelhady Ghanem

Power Diodes
A diode is the simplest electronic switch. It is uncontrollable in that the on
and off conditions are determined by voltages and currents in the circuit.

Diode terminals are known as Anode (A) and cathode (K) as shown in Fig. a.

The diode is forward-biased (ON) when the current iD is positive while

supporting a small voltage (0.2V to 3V) - (quadrant I in Fig. b). The diode
current varies exponentially with the diode voltage.
When the diode is reversed-biased (OFF), it supports a negative voltage and
carries a negligible current (leakage current from μA to mA) - (quadrant III
in Fig. b).

When the negative voltage exceeds a certain limit, known as the

breakdown voltage, the leakage current increases rapidly while the voltage
remains at the breaking value, which potentially damages the device.

The ideal diode characteristics are shown in Fig. c. During the ON- state, the
diode has zero-voltage across it and carries a positive current. During the
OFF state, the diode carries zero-current and supports a negative voltage.
 Dr./ Abdelhady Ghanem

Types of Power Diodes

Line frequency (general purpose)

• On state voltage: very low (below 1V).

• Large reverse recovery time trr (about 25us) (very slow response).
• Very high current ratings (up to 6kA).
• Very high voltage ratings (8kV).
• Used in line-frequency (50/60Hz) applications such as rectifiers.

Fast recovery
• Very low trr (<1μs).
• Power levels at several hundred volts and several hundred amps.
• Normally used in high frequency circuits.

Shockley
• It is a PNPN device with two terminals.
• Very low forward voltage drop (typical 0.3V).
• Limited blocking voltage (50-100V).
• Used in low voltage, high current application such as switched mode power supplies.
 Dr./ Abdelhady Ghanem

For more information about Diode Specifications, Ratings & Parameters

Visit the following website

https://www.electronics-
notes.com/articles/electronic_components/diode/specifications-parameters-
ratings.php#:~:text=%20%20%201%20Forward%20voltage%20drop%2C%20Vf%3A,i
n%20that%20this%20voltage%20is%20the...%20More%20
 Dr./ Abdelhady Ghanem

Thyristors
 Dr./ Abdelhady Ghanem

Thyristors ( Silicon Controlled Rectifiers “SCRs”)

• Thyristors are electronic switches used in some power electronic

circuits where control of switch turn-on is required. But once it
turns ON, the control terminal becomes ineffective and the
thyristor behaves similar to a diode.

• Thyristors are capable of large currents and large blocking

voltages for use in high-power applications, but switching
frequencies cannot be as high as when using other devices such
as MOSFETs.

• The thyristor current, IA, flows from the anode (A) to the cathode
(K) and the voltage VAk across the thyristor is positive when the
anode is at higher voltage than the cathode.
 Dr./ Abdelhady Ghanem

Thyristors ( Silicon Controlled Rectifiers “SCRs”)

• In quadrant I, in the absence of a gate current, the device is OFF
in the forward blocking region and supports a positive voltage.

• If a gate current is applied, the device switches to the ON-state

region and the device has a I-V characteristic similar to that of a
diode.

• In quadrant III, the device is OFF and the region is known as

the reverse blocking region and supports a negative voltage.

➢ The characteristics are similar to those of a diode. Comparing the switching characteristics of a
diode and a thyristor, it appears that when the thyristor is OFF, it can block large positive or
negative voltage, which is a fundamental feature that is important in circuit applications.

➢ Thyristor can be considered to carry an unidirectional current and supports a bidirectional

voltage.
 Dr./ Abdelhady Ghanem

Thyristors ( Silicon Controlled Rectifiers “SCRs”)

Thyristors can only be turned on with three conditions:

❖ The device must be forward biased, i.e., the anode should be more positive
than the cathode.
❖ A positive gate current (Ig) should be applied at the gate.
❖ The current through the thyristor should be more than the latching current.
Once conducting, the anode current is LATCHED (continuously flowing).

SCR rating

• Surge Current Rating (IFM)—The surge current rating (IFM) of an SCR is the peak anode current an SCR can handle for a
short duration.
• Holding Current (IH)—A minimum anode current must flow through the SCR in order for it to stay ON initially after the gate
signal is removed.
• Latching Current (IL)—A certain minimum value of anode current is needed to maintain conduction. If the anode current is
reduced below this minimum value, the SCR will turn OFF.
• Peak Repetitive Reverse Voltage (VRRM)—The maximum instantaneous voltage that an SCR can withstand, without
breakdown, in the reverse direction.
• Peak Repetitive Forward Blocking Voltage (VDRM)—The maximum instantaneous voltage that the SCR can block in the
forward direction. If the VDRM rating is exceeded, the SCR will conduct without a gate voltage.
• Nonrepetitive Peak Reverse Voltage (VRSM)—The maximum transient reverse voltage that the SCR can withstand.
• Maximum Gate Trigger Current (IGTM)—The maximum DC gate current allowed to turn the SCR ON.
• Minimum Gate Trigger Voltage (VGT)—The minimum DC gate-to-cathode voltage required to trigger the SCR.
• Minimum Gate Trigger Current (IGT)—The minimum DC gate current necessary to turn the SCR ON.
 Dr./ Abdelhady Ghanem

Thyristors ( Silicon Controlled Rectifiers “SCRs”)

Thyristor TURN-OFF
➢ Thyristor cannot be turned off by applying negative gate current. It can only be turned off if IA goes negative
(reverse). This happens when negative portion of the of sine-wave occurs (natural commutation),
➢ Another method of turning off is known as “forced commutation”, The anode current is “diverted” to another
circuitry.

Phase controlled
o Rectifying line frequency voltage and current for ac and dc motor drives.
o Large voltage (up to 7kV) and current (up to 5kA) capability.
o Low on-state voltage drop (1.5 to 3V).

Inverter grade
Types of Thyristors o Used in inverter and chopper.
o Quite fast. Can be turned-on using “force-commutation” method.

Light activated
o Similar to phase controlled, but triggered by pulse of light.
o Normally very high power ratings.
TRIAC
o Dual polarity thyristors.
 Dr./ Abdelhady Ghanem

The Triac (triode for alternating current)

The Triac is a member of the thyristor family which can conduct in both
directions (bidirectional semi-controlled device). Thus a Triac is similar to two
back to back (anti parallel) connected thyristosr but with only three terminals.

The Triac extensively used in residential lamp dimmers, heater control and for
speed control of small single phase series and induction motors.

The conduction of a triac is initiated by injecting a current pulse into the gate
terminal. The triac turns off only when the current through the main terminals
become zero.

As the Triac can conduct in both the directions the terms “anode” and “cathode”
are not used for Triacs. The three terminals are marked as MT1 (Main Terminal
1), MT2 (Main Terminal 2) and the gate by G.
 Dr./ Abdelhady Ghanem

The Gate Turn-Off Thyristor (GTO)

The GTO thyristor is a device that operates similar to a normal thyristor except the
device physics, design and manufacturing features allow it to be turned-off by a Ia
negative gate current which is accomplished through the use of a bipolar transistor. +
Vak
_

Turning off is difficult. Need very large reverse gate current (normally 1/5 of
anode current). Ia

Gate drive design is very difficult due to very large reverse gate current at turn off.
Ig>0 Ig=0
Ih
Vr Ibo

Ratings: Highest power ratings switch: Vbo Vak

Voltage: Vak<5kV; Current: Ia<5kA.
Frequency<5KHz.
v-i characteristics
 Dr./ Abdelhady Ghanem

Insulated Gate-Commutated Thyristor (IGCT)

Conducts like normal thyristor (latching), but can be turned off

using gate signal, similar to IGBT turn off; 20V is sufficent. Ia
+
Vak
Power switch is integrated with the gate-drive unit _

Ratings:
➢ Voltage: Vak < 6.5kV; Current: Ia<4kA.

➢ Frequency < 1KHz.

➢ Currently 10kV device is being developed. Very low on state

voltage: 2.7V for 4kA device
 Dr./ Abdelhady Ghanem

The MOS-Controlled Thyristor

The MCT is a hybrid or double mechanism device

that was designed to have a control port of a
MOSFET and a power port of a thyristor.

The characteristics of MCT are similar to the GTO,

except that the gate drive circuitry for the MCT is
less complicated than the design for a GTO as the
control circuit of the MCT uses a MOSFET instead
of a transistor.
 Dr./ Abdelhady Ghanem

Transistors
 Dr./ Abdelhady Ghanem

Bipolar Junction Transistor (BJT)

For the npn-type BJT shown in fig. a, the Base (B) is the control
terminal, where the power terminals are the Collector (C) and
the Emitter (E).

The real i-v characteristics of device are shown in Fig. b. The

device operates in quadrant I and is characterized by the plot of
the collector current IC versus the collector to emitter voltage
vCE as shown in Fig. b. BJT is a current-controlled device.

The device has three regions two of them where the device
operates as a switch and the third is where the device operates
as a linear amplifier. The device is OFF in the region below iB=0
and is ON in the region where vCE is less than vCE(Sat).

Neglecting the middle region, the idealized device

characteristics as a switch are shown in Fig. c. During the ON
state the device carries a collector current IC>0 with vCE=0. In
the OFF-state, the device supports positive vCE>0 with IC = 0.
Therefore, the BJT is unidirectional current and voltage device.
 Dr./ Abdelhady Ghanem

The Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

For the n-channel MOSFET shown in Fig. a, the control terminal
known as the Gate (G) and the power terminals are the Drain (D)
and Source (S).
The device is controlled by supplying a voltage (vGS) between the
gate and the source. This makes it a voltage controlled device
compared to the BJT, which is a current-controlled device.
The real v-i characteristics of device are shown in Fig. b. Similar
to the BJT, the MOSFET operates within three operating regions.
Two of the regions are used when the device is operated as a
switch, and the third is when the device is used as an amplifier.
To maintain the MOSFET in the off-state, vGS must be less than a
threshold voltage known as vT, which is the region below the line
marked OFF. And when the device is ON it act as resistance
determined by the slope of the line marked ON.

The idealized characteristics of a MOSFET switch are shown in

Fig. c. When the device is ON, it has zero vDS and carriers a current
ID>0 and when the device is OFF it supports a positive vDS and has
zero drain current (ID = 0).
 Dr./ Abdelhady Ghanem

The Insulated Gate Bipolar Transistor (IGBT)

The IGBT (its symbol shown in Fig. a) is a hybrid or also known
as double mechanism device. Its control port resembles a
MOSFET and its output or power port resembles a BJT.
Therefore, an IGBT combines the fast switching of a MOSFET and
the low power conduction loss of a BJT.

The control terminal is labeled as gate (G) and the power (b)
terminals are labeled as collector (C) and emitter (E).

The i-v characteristics of a real IGBT are shown in Fig. b, which

shows that the device operates in quadrants I and III. The ideal
characteristics of the device are shown in Fig. c. The device can
block bidirectional voltage and conduct unidirectional current.

An IGBT can change to the ON-state very fast but is slower than a
MOSFET device. Discharging the gate capacitance completes
control of the IGBT to the OFF-state. IGBT’s are typically used
for high power switching applications such as motor controls and
for medium power PV and wind PE.
 Dr./ Abdelhady Ghanem

Comparison between GTO, IGCT and IGBT

Item GTO IGCT IGBT
Maximum switch power (V×I ) 36MVA 36MVA 6MVA
Active di/dt and dv/dt control No No Yes
Active short circuit protection No No Yes
Turn-off (dv/dt) snubber Required Not required No required
Turn-on (di/dt) snubber Required Required No required
Parallel connection No No Yes
Switching speed Slow Moderate Fast
Open
Behavior after destruction Shorted Shorted
in most cases
On-state losses Low Low High
Switching losses High Low Low
Complex, Complex, Simple,
Gate Driver
separate integrated compact
Gate Driver Power
High High Low
Consumption
 Dr./ Abdelhady Ghanem

Device Rating
V (V)
12000 12000V/1500A
SCR (Mitsubishi) SCR: 27MVA
GTO/GCT: 36MVA
10000 IGBT: 6MVA

6500V/600A 7500V/1650A
8000 (Eupec)
(Eupec) 6000V/3000A 6500V/4200A 6000V/6000A
(ABB) (ABB) (Mitsubishi)
6000
6500V/1500A
(Mitsubishi)
GTO/GCT 4800V
5000A
3300V/1200A (Westcode)
4000
(Eupec)
4500V/900A 1700V/3600A
2500V/1800A
(Mitsubishi)
2000 (Fuji) (Eupec)
IGBT
0
0 1000 2000 3000 4000 5000 6000 I (A)