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Thyristors 3

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Thyristors

Silicon Controlled Rectifier


First introduced by Bell Telephone Lab in 1956.
Applications including relay controls, timedelay, power supplies, static switches, motor
controls, choppers, inverters, cycloconverters,
battery chargers, protective circuits, heater
controls, and phase controls.
Up to 10 MW, 2000 A, 1800 V, 50 kHz.
It has two states a low current, high impedance OFF state and a
low impedance high current, high ON state.

Most important type of power


semiconductor device.
Have the highest power handling
capability.they have a rating of 1200V /
1500A with switching frequencies ranging
from 1KHz to 20KHz.
Thyristor are operated as bistable
switches operating from nonconducting
state to conducting state..

Is inherently a slow switching device


compared to BJT or MOSFET.
Used as a latching switch that can be
turned on by the control terminal but
cannot be turned off by the gate.

4-Layer pnpn Devices


1. SCR Silicon-Controlled Rectifier
2. SCS - Silicon Controlled Switch
3. GTO - Gate Turn-Off Switch
4. LASCR - Light Activated SCR
These 4-layer pnpn devices are commonly
referred to as Thysistors.
Construction, Characteristics and
Applications are the learning objectives.

Basic SCR Operation (2)

(b) basic construction


1. The Anode must be positive with respect to the Cathode
(necessary condition)
2. A turnturn-on pulse current must be established OR if
applied voltage is greater than the forward breakover
voltage

SCR

Symbol of SCR
Silicon Controlled Rectifier
As a Thyristor is basically a silicon made
controlled device , it is known as
Semiconductor Controlled Rectifier (SCR)
also .

Basic SCR Operation (1)

(a) Symbol

Device Operation
When the anode is made
positive w.r.t the cathode , the
junctions J1 and J3 are
forward biasesd and J2 is
revesed biased.then the
device is in forward blocking or
OFF state.
If the anode to cathode voltage
VAK is increased to sufficiently
large value the reverse biased
junction J2 breaks this is
known as avalanche
breakdown resulting in a large
forward current . The device is
then in conducting or ON state.

V-I Characteristics

The anode current must be more


than a value known as Latching
current IL to maintain the required
amount of flow or the device
reverts to the blocking condition.
Once a thyristor conducts it
behaves like a conucting diode
and there no control over the
device. However if the forward
anode current is reduced to a level
known as Holding current I H- a
depletetion region forms and the
device goes to blocking state.
Holding current is the minimum
current to maintain the thyristor in
the ON state.

A thyristor can be turned ON by increasing the forward


voltage VAK beyond VBO but such turn on can be
destructive . In practice the forward voltage is maintained
below VBO and thyristor is turned ON by applying a
positive voltage between its gate and cathode shown by
dashed line.
Once a thyristor is turned ON by a gating signal and
anode current is greater than IH, the device continues to
conduct due to feedback even if the gating signal is
removed A thyristor is a Latching device.
The latching action due to a positive feedback can be
studied by using a two transistor model of a thyristor. A
thyristor can be considered as two complementary
transistors one pnp (Q1) and one npn (Q2).

Basic SCR Operation (3)


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4

SQS

QSQ
4

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SCR can be represented by two transistors

V-I Characteristics

The anode current must be more


than a value known as Latching
current IL to maintain the required
amount of flow or the device
reverts to the blocking condition.
Once a thyristor conducts it
behaves like a conucting diode
and there no control over the
device. However if the forward
anode current is reduced to a level
known as Holding current I H- a
depletetion region forms and the
device goes to blocking state.
Holding current is the minimum
current to maintain the thyristor in
the ON state.

The general transistor equations are,


IC IB 1 ICBO
IC IE ICBO
IE IC IB
IB IE 1 ICBO

Considering PNP transistor


of the equivalent circuit,
IE1 IA, IC IC1 , 1,
ICBO ICBO1 , IB IB1

IB1 IA 11 ICBO1 1

Considering NPNtransistor
of the equivalent circuit,
IC IC2 , IB IB2 , IE2 IK IA IG
IC2 2Ik ICBO2
IC2 2 IA IG ICBO2 2

From the equivalent circuit,


we see that
IC2 I B1

2 I g ICBO1 ICBO2
IA
1 1 2

C ase 1: W hen I g 0
IA

I C B O1 I C B O 2
1 1 2

Case 2: When IG 0

2 Ig ICBO1 ICBO2
IA
1 1 2

Two Transistor Model of thyristor

Operation of SCR
A thyristor can be turned ON by increasing the forward
voltage VAK beyond VBO but such turn on can be
destructive . In practice the forward voltage is maintained
below VBO and thyristor is turned ON by applying a
positive voltage between its gate and cathode shown by
dashed line.
Once a thyristor is turned ON by a gating signal and
anode current is greater than IH, the device continues to
conduct due to feedback even if the gating signal is
removed A thyristor is a Latching device.
The latching action due to a positive feedback can be
studied by using a two transistor model of a thyristor. A
thyristor can be considered as two complementary
transistors one pnp (Q1) and one npn (Q2).

V-I Characteristics

The anode current must be more


than a value known as Latching
current IL to maintain the required
amount of flow or the device
reverts to the blocking condition.
Once a thyristor conducts it
behaves like a conucting diode
and there no control over the
device. However if the forward
anode current is reduced to a level
known as Holding current I H- a
depletetion region forms and the
device goes to blocking state.

Turn-on Characteristics
ton is the time between the
application of gate signal
and the conduction of the
thyristor.
td=time interval between
10% of gate current (0.1IG) 10% of on state current
(0.1IT).
tr=time required for anode
current to rise from 10 %
(0.1IT). on state current to
90 % (0.9IT). of on state
current.

ton td tr

Methods of Thyristor Turn-on


A thyristoris turned on by increasing the anode current. This can be
accomplished in one of the following ways .
1)Thermal Turn-on: if the temp is high thers is increase in number of
e-h pair which increases leakage current-transistor may be turned
on.
2) Light: If light is alowed to strike the junctions of a thyristor, the
electron-hole pairs increase, and the thyristor may be turned on. The
light activated thyristor are turned on by allowing the thyristor to
strike on the silicon wafers.
3) High Voltage: If the anode to cathode voltage is greater than the
forward breakdown voltage VBO , sufficient leakage current initiates
regenerative turn on.
4) Gate Current: if the thyristor is forward biased , the injection of gate
current by applying gate voltage between gate and cathode
terminals turns on the thristor. As the gate current increases,
forward blocking voltage is decreased as shown in the figure
5) dv/dt: the rate of rise of anode current cathode voltage is high the
charging current of the capacitive junctions may be sufficient to turn
on the thyristor

Effects of gate current

THYRISTOR TURN-OFF
A thyristor can be turned off by reducing
the forward current to a level below the
holding current IH. There are various
techniques to turn off a thyristor. In all the
techniques
the
anode
current
is
maintained below holding currentfor a
sufficient time so that all the excess
carriers in the four layers are swept out or
recombined.

SCRs and Their Characteristics


SCRs are frequently used to control the amount of power that is

delivered to a load.
Figure shows a circuit where an SCR is used to control the amount of
load current supplied to a lamp.

Fig. 32-5 (a)

Half-wave rectifier

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