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Tutorial 1

This document contains a tutorial on electrical and electronic materials. It includes questions on topics like calculating atomic fractions in alloys, properties of cadmium selenide, bonding in crystalline solids, crystal structures, calculating properties of unit cells, drawing planes and directions using Miller indices, calculating properties of silicon and silicon dioxide, defects in materials, allotropes of carbon, crystal growth techniques, amorphous semiconductors, and properties of solder alloys. The tutorial covers fundamental concepts and calculations related to materials for electrical and electronic applications.

Uploaded by

karan
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© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
286 views

Tutorial 1

This document contains a tutorial on electrical and electronic materials. It includes questions on topics like calculating atomic fractions in alloys, properties of cadmium selenide, bonding in crystalline solids, crystal structures, calculating properties of unit cells, drawing planes and directions using Miller indices, calculating properties of silicon and silicon dioxide, defects in materials, allotropes of carbon, crystal growth techniques, amorphous semiconductors, and properties of solder alloys. The tutorial covers fundamental concepts and calculations related to materials for electrical and electronic applications.

Uploaded by

karan
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Indian Institute of Technology Roorkee

Department of Metallurgical and Materials Engineering


MT-202 Electrical and Electronic Materials

Tutorial 1

1.

i.

Consider a multicomponent alloy containing N elements. If w1, w2, w3,..,wN are


the weight fractions of the components 1, 2, 3, ..,N in the alloy and M1, M2,
M3,..,MN are the respective atomic masses of the elements, show that the
atomic fraction of the ith component is given by,
wi Mi
ni =
-----------------------------w1 M1+w2 M2+------------+wN MN

ii.
Consider the semiconducting II-VI compound cadmium selenide, CdSe. Given the
atomic masses of Cd and Se, find the weight fraction of Cd and Se in the
compound and grams of Cd and Se needed to make 100 grams of CdSe.
2.
Explain the general bonding principle of atoms to form a crystalline solid with the
help of energy verses inter-atomic distance plot.
3.

i.
State various physical and mechanical properties of materials.
ii.

Explain how the bonding type affect the above properties. Give examples.
Define and explain the following with the help of suitable diagrams

4.
i.
ii.
iii.
iv.
v.
vi.
5.
i.
ii.
iii.
iv.
v.
vi.

Space lattice
Unit cell and lattice parameters
Crystal systems
Bravais lattice and their classification
Origin for the creation of FCC Bravais lattice from a primitive cubic lattice
Crystal voids and their coordinates
Calculate the following:
Effective number of atoms in SC, BCC, FCC, HCP unit cells
Relationship between the size of the unit cell and atomic diameter in SC, BCC,
FCC, HCP unit cells
Packing factors of BCC, FCC, HCP unit cells
Packing factor of a diamond cubic crystal structure
Coordination numbers of BCC, FCC, HCP crystal lattice
c/a ratio for an ideal HCP unit cell

vii.

Size of largest sphere that can fit into the tetrahedral & octahedral interstitial sites
of a close packed structures without distorting the unit cell.

viii. Volume of unit cell of germanium in cubic meters, the atomic radius of Ge having
Diamond Cubic structure being 1.223 Ao
6.

7.

Show with the help of neat sketches the following:


i.

Planes whose Miller indices are (111), (210), (010), (0 ), (002), (130), (212)
and(3 2).

ii.

Directions whose Miller indices are [111], [110], [10], [122], [301], [201] and [2
3].

iii.

[1210], [01 0], [011] directions and (1210), ( 22), (1230) planes (Miller
Bravais Index) in HCP unit cell
In a cubic unit cell the (hkl) & [hkl] are perpendicular to each other

iv.

Miller index of the direction that is common to both planes (110) and (111) inside
the unit cell of a cubic crystal.

v.

3 parallel planes of belonging to {111} inside a cubic unit cell (may be touching
the UC).

vi.

6 direction <110> on any one {111}

i.

Given the Si lattice parameter a=0.543 nm. Calculate the number of Si atoms per unit volume, in
-3

nm .

ii.

Calculate the number of atoms per m and per nm on the (100), (110), and (111) planes in the Si
crystal as shown in above figure. Which plane has the maximum number of atoms per unit area?

iii.

-3

The density of SiO2 is 2.27 g cm . Given that its structure is amorphous, calculate the number of
-3
molecules per unit volume, in nm . Compare your result with (i) and comment on what happens
when the surface of a Si crystal oxidizes. The atomic masses of Si and O are 28.09 and 16,
respectively.

8.

In device fabrication, Si is frequently doped by the diffusion of impurities (dopants) at high


0

temperatures , typically 950-1200 C. The energy of vacancy formation in the Si crystal is about
0

3.6eV. What is the equilibrium concentration of vacancies in a Si crystal at 1000 C ? Neglect the
change in the density with temperature which is less than 1 percent in this case.

10.

11.

i.

Describe with neat sketches, the 3 types of line defects and relate b, Burgers vector with
dislocation line.

ii.

Describe planar defects ; grain boundaries and surface defects

iii.

How do the defects affect the electrical conductivity of the materials?

i.

What are the allotropically different forms of carbon?

ii.

Give neat sketches of their crystal structures.

iii.

How do you classify these materials in terms of electrical conductivity?

i.

Why single crystals are used for electronic applications? Explain methods of bulk single crystal
growth.

ii.

What is epitaxial growth? Explain with one example each of growth for; binary, ternary and
quaternary semiconductor compounds, with the help of Eg vs lattice parameter of the crystal
plot.

12.

13.

iii.

What is the significance of distribution coefficient in zone refining?

i.

How amorphous semiconductors are prepared? Give an example.

ii.

Explain how the nonstoichiometeric, ZnO crystal with excess Zn at the interstitial sites contribute
free electron for conduction.
Consider 50% Pb- 50% Sn solder alloy:

f13_07_pg196

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