IRFZ20, SiHFZ20

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

50

RDS(on) ()

VGS = 10 V

0.10

Qg (Max.) (nC)

17

Qgs (nC)

9.0

Qgd (nC)

3.0

Configuration

Single

Extremely Low RDS(on)

Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Parts Per Million Quality
Compliant to RoHS Directive 2002/95/EC

TO-220AB

DESCRIPTION
The technology has expanded its product base to serve the
low voltage, very low RDS(on) MOSFET transistor
requirements.
Vishays highly efficient geometry and
unique processing have been combined to create the lowest
on resistance per device performance. In addition to this
feature all have documented reliability and parts per million
quality!
The transistor also offer all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that
are operated from low voltage batteries, such as
automotive, portable equipment, etc.

G
S
G

D
S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRFZ20PbF
SiHFZ20-E3
IRFZ20
SiHFZ20

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS

PARAMETER
Drain-Source Voltagea
Gate-Source Voltagea
Continuous Drain Current
Pulsed Drain Currentb
Single Pulse Avalanche Energyc
Linear Derating Factor (see fig. 16)
Maximum Power Dissipation (see fig. 16)
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)

SYMBOL
VDS
VGS
VGS at 10 V

TC = 25 C
TC = 100 C

ID
IDM
EAS

TC = 25 C
for 10 s

PD
TJ, Tstg

LIMIT
50
20
15
10
60
5
0.32
40
- 55 to + 150
300 (0.063" (1.6 mm) from case

UNIT
V

A
mJ
W/C
W
C

Notes
a. TJ = 25 C to 150 C
b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).
c. Starting TJ = 25 C, L = 0.07 mH, Rg = 25 , IAS = 12 A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10

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IRFZ20, SiHFZ20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.
80

Typical Socket Mount, Junction-to-Ambient

RthJA

Case-to-Sink, Mounting Surface Flat, Smooth, and Greased

RthCS

1.0

Junction-to-Case

RthJC

3.12

UNIT
C/W

ELECTRICAL CHARACTERISTICS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT
V

Static
VDS

VGS = 0 V, ID = 250 A

50

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

500

nA

VDS > Max. Rating, VGS = 0 V

250

Zero Gate Voltage Drain Current

IDSS

VDS = Max. Rating x 0.8, VGS = 0 V,

TC = 125 C

1000

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

On-State Drain Current

Drain-Source On-State Resistanceb
Forward Transconductanceb

ID(on)

VGS = 10 V

VDS > ID(on) x RDS(on) max.

15

RDS(on)

VGS = 10 V

ID = 10 A

0.080

0.10

gfs

VDS > ID(on) x RDS(on) max., ID = 9.0 A

5.0

6.0

Input Capacitance

Ciss

560

860

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 11

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

Dynamic

Rise Time
Turn-Off Delay Time

250

350

60

100

12

17

9.0

3.0

td(on)

15

30

tr

45

90

20

40

15

30

3.5

4.5

15

60

1.5

100

ns

0.4

td(off)

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

VGS = 10 V

ID = 20 A, VDS = 0.8 max.

rating, see fig. 18 for test
circuit (Gate charge is
essentially independent of
operating temperature)

VDD = 25 V, ID = 9.0 A,
Z0 = 50 , see fig. 5b
Modified MOSFET
symbol showing the
internal device
inductances

pF

nC

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltageb

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction rectifier

TC = 25 C, IS = 15 A, VGS = 0 V
TJ = 150 C, IF = 15 A, dIF/dt = 100 A/s

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5).
b. Pulse test: Pulse width 300 s; duty cycle 2 %.

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Document Number: 91340

S10-1682-Rev. A, 26-Jul-10

IRFZ20, SiHFZ20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Saturation Characteristics

Document Number: 91340

S10-1682-Rev. A, 26-Jul-10

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

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IRFZ20, SiHFZ20
Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

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Document Number: 91340

S10-1682-Rev. A, 26-Jul-10

IRFZ20, SiHFZ20
Vishay Siliconix

RD

VDS
VGS

D.U.T.

RG

+
- VDD
10 V

Pulse width 1 s
Duty factor 0.1 %

Fig. 10a - Switching Time Test Circuit

VDS
90 %

10 %
VGS
td(on)

Fig. 9 - Maximum Drain Current vs. Case Temperature

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

VDS
tp
VDD
VDS

IAS

Fig. 12a - Clamped Inductive Test Circuit

Document Number: 91340

S10-1682-Rev. A, 26-Jul-10

Fig. 12b - Unclamped Inductive Waveforms

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IRFZ20, SiHFZ20
Vishay Siliconix

Fig. 13 - Typical Transconductance vs. Drain Current

Fig. 14 - Breakdown Voltage vs. Temperature

Fig. 16 - Power vs. Temperature Derating Curve

Fig. 15 - Typical On-Resistance vs. Drain Current

Fig. 17 - Gate Charge Test Circuit

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Document Number: 91340

S10-1682-Rev. A, 26-Jul-10

IRFZ20, SiHFZ20
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T.

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91340.

Document Number: 91340

S10-1682-Rev. A, 26-Jul-10

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Vishay

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Document Number: 91000

Revision: 11-Mar-11

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