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Fan 7392N

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FAN7392

High-Current, High- and Low-Side, Gate-Drive IC


Features

Description

Floating Channel for Bootstrap Operation to +600V

The FAN7392 is a monolithic high- and low-side gate


drive IC, that can drive high-speed MOSFETs and IGBTs
that operate up to +600V. It has a buffered output stage
with all NMOS transistors designed for high pulse current
driving capability and minimum cross-conduction. Fairchilds high-voltage process and common-mode noise
canceling techniques provide stable operation of the
high-side driver under high dv/dt noise circumstances.
An advanced level-shift circuit offers high-side gate driver
operation up to VS=-9.8V (typical) for VBS=15V. Logic
inputs are compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The UVLO circuit prevents
malfunction when VCC and VBS are lower than the specified threshold voltage. The high-current and low-output
voltage drop feature makes this device suitable for halfand full-bridge inverters, like switching-mode power supply and high-power DC-DC converter applications.

3A/3A Sourcing/Sinking Current Driving Capability


Common-Mode dv/dt Noise Canceling Circuit
3.3V Logic Compatible
Separate Logic Supply (VDD) Range from 3.3V to 20V
Under-Voltage Lockout for VCC and VBS
Cycle-by-Cycle Edge-Triggered Shutdown Logic
Matched Propagation Delay for Both Channels
Outputs In-phase with Input Signals
Available in 14-DIP and 16-SOP (Wide) Packages

Applications
High-Speed Power MOSFET and IGBT Gate Driver
Server Power Supply
Uninterrupted Power Supply (UPS)
Telecom System Power Supply

14-PDIP

16-SOP

Distributed Power Supply


Motor Drive Inverter

Ordering Information
Part Number

Operating
Temperature Range

FAN7392N
FAN7392M

Package

Eco Status

14-PDIP
-40C to +125C

FAN7392MX

16-SOP

Packing Method
Tube

RoHS

Tube
Tape and Reel

For Fairchilds definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

July 2009

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Typical Application Diagrams

Up to 600V

Q1

15V
R1

NC

HO

VDD

VB

10

HIN

VS

CBOOT

HIN

Load
DBOOT

Controller SD

11

SD

NC

LIN

12

LIN

VCC

RBOOT

15V
C1

13

VSS

COM

Q2
R2

14

NC

LO

Figure 1. Typical Application Circuit (Referenced 14-DIP)

Up to 600V

Q1
R1

NC

HO

10

NC

VB

11

VDD

VS

HIN

12

HIN

NC

Controller SD

13

SD

NC

LIN

14

LIN

VCC

15V

CBOOT

Load
DBOOT

RBOOT

15V
C1

15

VSS

COM

Q2
R2

16

NC

LO

Figure 2. Typical Application Circuit (Referenced 16-SOP)

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
2

VB

HO

VS

VCC

LO

COM

UVLO

9
PULSE
GENERATOR

HIN

DRIVER

VDD

10
SCHMITT
TRIGGER INPUT

12

SD

11

VSS

13

HS(ON/OFF)

UVLO

CYCLE-By-CYCLE
EDGE TRIGGERED
SHUTDOWN

LS(ON/OFF)

VSS/COM
LEVEL
SHIFT

DELAY

DRIVER

LIN

NOISE
CANCELLER

Pin 4, 8, and 14 are no connection

Figure 3. Functional Block Diagram (Referenced 14-Pin)

VB

HO

VS

VCC

LO

COM

UVLO

11
PULSE
GENERATOR

HIN

DRIVER

VDD

12
SCHMITT
TRIGGER INPUT

14

SD

13

VSS

15

HS(ON/OFF)

UVLO

CYCLE-By-CYCLE
EDGE TRIGGERED
SHUTDOWN

LS(ON/OFF)

VSS/COM
LEVEL
SHIFT

DELAY

DRIVER

LIN

NOISE
CANCELLER

Pin 4, 5, 9,10 and 16 are no connection

Figure 4. Functional Block Diagram (Referenced 16-SOP)

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
3

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Internal Block Diagram

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Pin Configuration

14

NC

COM

13

VSS

VCC

12

LIN

NC

11

SD

VS

10

HIN

VB

VDD

HO

NC

(a) 14-DIP

16

NC

COM

15

VSS

VCC

14

LIN

NC

13

SD

NC

12

HIN

VS

11

VDD

VB

10

NC

HO

NC

FAN7392M

FAN7392

LO

LO

(b) 16-SOP (Wide Body)

Figure 5. Pin Configurations (Top View)

Pin Definitions
14-Pin

16-Pin

Name

LO

COM

Low-Side Return

VCC

Low-Side Supply Voltage

VS

High-Voltage Floating Supply Return

VB

High-Side Floating Supply

HO

High-Side Driver Output

11

VDD

Logic Supply Voltage

10

12

HIN

Logic Input for High-Side Gate Driver Output

11

13

SD

Logic Input for Shutdown Function

12

14

LIN

Logic Input for Low-Side Gate Driver Output

13

15

VSS

Logic Ground

4,8,14

4, 5, 9, 10, 16

NC

No Connect

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

Description
Low-Side Driver Output

www.fairchildsemi.com
4

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA=25C unless otherwise specified.

Symbol

Characteristics

Min.

Max.

Unit

VB

High-Side Floating Supply Voltage

-0.3

625.0

VS

High-Side Floating Offset Voltage

VB-25.0

VB+0.3

VHO

High-Side Floating Output Voltage

VS-0.3

VB+0.3

VCC

Low-Side Supply Voltage

-0.3

25.0

VLO

Low-Side Floating Output Voltage

-0.3

VCC+0.3

VDD

Logic Supply Voltage

VSS

Logic Supply Offset Voltage

VIN

Logic Input Voltage (HIN, LIN and SD)

dVS/dt

VSS+25.0

VCC+0.3

VSS-0.3

VDD+0.3

50

V/ns

Allowable Offset Voltage Slew Rate

PD

Power Dissipation(1, 2, 3)

JA

Thermal Resistance

TJ

Maximum Junction Temperature

TSTG

-0.3
VCC-25.0

14-PDIP

1.6

16-SOP

1.3

14-PDIP

75

16-SOP

95

Storage Temperature

-55

W
C/W

+150

+150

Notes:
1. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).
2. Refer to the following standards:
JESD51-2: Integral circuits thermal test method environmental conditions, natural convection; and
JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages.
3. Do not exceed power dissipation (PD) under any circumstances.

Recommended Operating Conditions


The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.

Symbol

Parameter

Min.

Max.

Unit

VB

High-Side Floating Supply Voltage

VS+10

VS+20

VS

High-Side Floating Supply Offset Voltage

6-VCC

600

VHO

High-Side Output Voltage

VS

VB

VCC

Low-Side Supply Voltage

10

20

VLO

Low-Side Output Voltage

VCC

VDD

Logic Supply Voltage

VSS+3

VSS+20

VSS

Logic Supply Offset Voltage

-5

VIN

Logic Input Voltage

VSS

VDD

TA

Operating Ambient Temperature

-40

+125

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
5

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Absolute Maximum Ratings

VBIAS(VCC, VBS, VDD)=15.0V, VSS=COM=0V and TA=25C, unless otherwise specified. The VIH, VIL, and IIN
parameters are referenced to VSS and are applicable to the respective input leads: HIN, LIN, and SD. The VO and IO
parameters are referenced to VS and COM and are applicable to the respective output leads: HO and LO.

Symbol

Characteristics

Test Condition

Min. Typ. Max. Unit

Low-Side Power Supply Section


80

10

IQCC

Quiescent VCC Supply Current

VIN=0V or VDD

IQDD

Quiescent VDD Supply Current

VIN=0V or VDD

IPCC

Operating VCC Supply Current

fIN=20kHz, rms, VIN=15VPP

430

IPDD

Operating VDD Supply Current

fIN=20kHz, rms, VIN=15VPP

300

ISD

Shutdown Supply Current

SD=VDD

120

VCCUV+

VCC Supply Under-Voltage


Positive-Going Threshold Voltage

VIN=0V, VCC=Sweep

7.7

8.8

9.9

VCCUV-

VCC Supply Under-Voltage


Negative-Going Threshold Voltage

VIN=0V, VCC=Sweep

7.3

8.4

9.5

VCCUVH

VCC Supply Under-Voltage Lockout


Hysteresis Voltage

VIN=0V, VCC=Sweep

0.4

40

Bootstrapped Supply Section


A

IQBS

Quiescent VBS Supply Current

VIN=0V or VDD

60

IPBS

Operating VBS Supply Current

fIN=20kHz, rms value

500

VBSUV+

VBS Supply Under-Voltage


Positive-Going Threshold Voltage

VIN=0V, VBS=Sweep

7.7

8.8

9.9

VBSUV-

VBS Supply Under-Voltage


Negative-Going Threshold Voltage

VIN=0V, VBS=Sweep

7.3

8.4

9.5

VBSUVH

VBS Supply Under-Voltage Lockout


Hysteresis Voltage

VIN=0V, VBS=Sweep

Offset Supply Leakage Current

VB=VS=600V

ILK

130

0.4

V
50

Input Locic Section (HIN, LIN, and SD)


VDD=3V

2.4

VDD=15V

9.5

VIH

Logic 1 Input Threshold Voltage

VIL

Logic 0 Input Threshold Voltage

IIN+

Logic Input High Bias Current

VIN=VDD

IIN-

Logic Input Low Bias Current

VIN=0V

RIN

Logic Input Pull-Down Resistance

VDD=3V

0.8

VDD=15V

6.0

40

20

375

750

Gate Driver Output Section


VOH

High-Level Output Voltage (VBIAS - VO)

No Load (IO=0A)

1.5

VOL

Low-Level Output Voltage

No Load (IO=0A)

200

mV

IO+

Output High, Short-Circuit Pulsed Current(4)

VO=0V, PW 10s

2.5

3.0

IO-

Current(4)

VO=15V, PW 10s

2.5

3.0

Output Low, Short-Circuit Pulsed

VSS/COM VSS-COM/COM-VSS Voltage Educability


- VS

-5.0

Allowable Negative VS Pin Voltage for HIN


Signal Propagation to HO

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

-9.8

5.0

-7.0

www.fairchildsemi.com
6

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Electrical Characteristics

VBIAS(VCC, VBS, VDD)=15.0V, VSS=COM=0V, CLOAD=1000pF, TA=25C, unless otherwise specified.

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

130

180

ns

ton

Turn-On Propagation Delay Time

VS=0V

toff

Turn-Off Propagation Delay Time

VS=0V

150

200

ns

tsd

Shutdown propagation Delay Time(4)

130

180

ns

tr

Turn-On Rise Time

25

50

ns

tf

Turn-Off Fall Time

20

45

ns

35

ns

MT

Delay Matching, HO & LO Turn-On/Off

Note:
4. These parameters guaranteed by design.

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
7

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Dynamic Electrical Characteristics

200

160

180

tOFF [ns]

tON [ns]

180

140

160

120

140

100

120

80
-40

-20

20

40

60

80

100

100
-40

120

-20

Temperature [C]

50

50

40

40

30

20

10

10

20

40

60

80

100

0
-40

120

-20

Temperature [C]

100

120

20

40

60

80

100

120

Figure 9. Turn-Off Fall Time


vs. Temperature

30

30

MTOFF [ns]

MTON [ns]

80

Temperature [C]

Figure 8. Turn-On Rise Time


vs. Temperature

20

10

0
-40

60

30

20

-20

40

Figure 7. Turn-Off Propagation Delay


vs. Temperature

tF [ns]

tR [ns]

Figure 6. Turn-On Propagation Delay


vs. Temperature

0
-40

20

Temperature [C]

20

10

-20

20

40

60

80

100

0
-40

120

Temperature [C]

20

40

60

80

100

120

Temperature [C]

Figure 10. Turn-On Delay Matching vs. Temperature

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

-20

Figure 11. Turn-Off Delay Matching vs. Temperature

www.fairchildsemi.com
8

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Typical Characteristics

180

40

160

IIN+ [A]

tSD [ns]

30
140

120

10

100

80
-40

20

-20

20

40

60

80

100

0
-40

120

-20

Temperature [C]

20

40

60

80

100

120

Temperature [C]

Figure 12. Shutdown Propagation Delay


vs. Temperature

Figure 13. Logic Input High Bias Current


vs. Temperature

80
120

70

100

IQBS [A]

IQCC [A]

60
50
40
30

80
60
40

20
20

10
0
-40

-20

20

40

60

80

100

0
-40

120

-20

Temperature [C]

40

60

80

100

120

Figure 15. Quiescent VBS Supply Current


vs. Temperature

1000

1000

800

800

IPBS [A]

IPCC [A]

Figure 14. Quiescent VCC Supply Current


vs. Temperature

600

400

600

400

200

200

0
-40

20

Temperature [C]

-20

20

40

60

80

100

0
-40

120

Figure 16. Operating VCC Supply Current


vs. Temperature

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

-20

20

40

60

80

100

120

Temperature [C]

Temperature [C]

Figure 17. Operating VBS Supply Current


vs. Temperature

www.fairchildsemi.com
9

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Typical Characteristics (Continued)

9.5

9.0

VCCUV- [V]

VCCUV+ [V]

9.5

9.0

8.5

8.0

8.0

-40

8.5

7.5
-20

20

40

60

80

100

-40

120

-20

20

40

60

80

100

120

Temperature [C]

Temperature [C]

Figure 18. VCC UVLO+ vs. Temperature

Figure 19. VCC UVLO- vs. Temperature

9.5

9.0

VBSUV- [V]

VBSUV+ [V]

9.5

9.0

8.5

8.0

8.0

-40

8.5

7.5
-20

20

40

60

80

100

-40

120

-20

20

40

60

80

100

120

Temperature [C]

Temperature [C]

Figure 20. VBS UVLO+ vs. Temperature

Figure 21. VBS UVLO- vs. Temperature

1.5

20
15
10

VOH [V]

VOL [mV]

1.0

5
0
-5

0.5

-10
-15

0.0
-40

-20

20

40

60

80

100

-20
-40

120

Temperature [C]

20

40

60

80

100

120

Temperature [C]

Figure 22. High-Level Output Voltage


vs. Temperature

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

-20

Figure 23. Low-Level Output Voltage


vs. Temperature

www.fairchildsemi.com
10

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Typical Characteristics (Continued)

10

11

9
10

VIL [V]

VIH [V]

8
7
6

5
7

6
-40

-20

20

40

60

80

100

3
-40

120

-20

20

Figure 24. Logic High Input Voltage


vs. Temperature

80

100

120

Logic Threshold Voltage [V]

12

-8

VS [V]

60

Figure 25. Logic Low Input Voltage


vs. Temperature

-7

-9

-10

-11

-12
-40

40

Temperature [C]

Temperature [C]

-20

20

40

60

80

100

10
8
6
4

VIH
VIL

2
0

120

Temperature [C]

10

12

14

16

18

20

VDD Logic Supply Voltage [V]

Figure 26. Allowable Negative VS Voltage


vs. Temperature

Figure 27. Input Logic (HIN & LIN) Threshold Voltage


vs. VDD Supply Voltage

VS [V]

-4

VCC=VBS

-6

COM=0V

-8

TA=25C

-10
-12
-14
-16
10

11

12

13

14

15

16

17

18

19

20

Supply Voltage [V]

Figure 28. Allowable Negative Vs Voltage for HIN


Signal Propagation to High Side vs. Supply Voltage

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
11

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Typical Characteristics (Continued)

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Switching Time Definitions

15V

NC

HO

VDD

VB

HIN

10

HIN

VS

SD

11

SD

NC

HO

10F

1nF

100nF

15V

(0 to 600V)
10F

15V

LIN

LIN

VCC

13

VSS

COM

14

NC

LO

12

10F

100nF

LO
1nF

Figure 29. Switching Time Test Circuit (Referenced 14-DIP)

HIN
LIN

SD

HO
LO
Shutdown

Skip

Figure 30. Input/Output Timing Diagram

HIN
LIN

50%

tON

50%

tR

tOFF
90%

HO
LO

tF

90%

10%

10%

Figure 31. Switching Time Waveform Definitions

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
12

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Switching Time Definitions (Continued)

50%
SD
tSD
90%
HO
LO

Figure 32. Shutdown Waveform Definition

HIN
LIN

50%

LO
10%

50%

MT

HO
10%
90%

90%

LO

MT

HO

Figure 33. Delay Matching Waveform Definitions

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
13

Negative VS Transient
Figure 36 and Figure 37 show the commutation of the
load current between high-side switch, Q1, and low-side
freewheelling diode, D3, in same inverter leg. The parasitic inductances in the inverter circuit from the die wire
bonding to the PCB tracks are jumped together in LC and
LE for each IGBT. When the high-side switch, Q1, and
low-side switch, Q4, are turned on, the VS1 node is
below DC+ voltage by the voltage drops associated with
the power switch and the parasitic inductances of the circuit due to load current is flows from Q1 and Q4, as
shown in Figure 36. When the high-side switch, Q1, is
turned off and Q4, remained turned on, the load current
to flows the low-side freewheeling diode, D3, due to the
inductive load connected to VS1 as shown in Figure 37.
The current flows from ground (which is connected to the
COM pin of the gate driver) to the load and the negative
voltage present at the emitter of the high-side switching
device.

The bootstrap circuit has the advantage of being simple


and low cost, but has some limitations. The biggest difficulty with this circuit is the negative voltage present at
the emitter of the high-side switching device when highside switch is turned-off in half-bridge application.
If the high-side switch, Q1, turns-off while the load current is flowing to an inductive load, a current commutation occurs from high-side switch, Q1, to the diode, D2,
in parallel with the low-side switch of the same inverter
leg. Then the negative voltage present at the emitter of
the high-side switching device, just before the freewheeling diode, D2, starts clamping, causes load current to
suddenly flow to the low-side freewheeling diode, D2, as
shown in Figure 34.
DC+ Bus
Q1
D1
iLOAD

In this case, the COM pin of the gate driver is at a higher


potential than the VS pin due to the voltage drops associated with freewheeling diode, D3, and parasitic elements, LC3 and LE3.

ifreewheeling

Load

VS

DC+ Bus

Q2
LC1

D2

LC2

VLC1

Q2

Q1
D1

D2
iLOAD

LE1

Figure 34. Half-Bridge Application Circuits

VLE1

LE2

Load

VS1

This negative voltage can be trouble for the gate drivers


output stage, there is the possibility to develop an overvoltage condition of the bootstrap capacitor, input signal
missing and latch-up problems because it directly affects
the source VS pin of the gate driver, as shown in Figure
35. This undershoot voltage is called negative VS transient.

ifreewheeling

VS2

LC3

VLC4

LC4
Q4

Q3
D3

D4

LE3

VLE4

LE4

Figure 36. Q1 and Q4 Turn-On


Q1

DC+ Bus

GND

LC2

LC1

Q2

Q1
D1

D2
iLOAD
ifreewheeling

LE1

VS
GND

LC3

LE2

Load

VS1
VLC3

VS2
VLC4

Freewheeling

D3

LE3

LC4
Q4

Q3

VLE3

D4

VLE4

LE4

Figure 35. VS Waveforms During Q1 Turn-Off


Figure 37. Q1 Turn-Off and D3 Conducting

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
14

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Application Information

The FAN7392 has a negative VS transient performance


curve, as shown in Figure 38.

The recommended placement and selection of component as follows:


Place a bypass capacitor between the VDD and VSS

pins. A ceramic 1F capacitor is suitable for most


applications. This component should be placed as
close as possible to the pins to reduce parasitic elements.
The bypass capacitor from VCC to COM supports both
the low-side driver and bootstrap capacitor recharge.
A value at least ten times higher than the bootstrap
capacitor is recommended.
The bootstrap resistor, RBOOT, must be considered in
sizing the bootstrap resistance and the current developed during initial bootstrap charge. If the resistor is
needed in series with the bootstrap diode, verify that
VB does not fall below COM (ground). Recommended
use is typically 5 ~ 10 that increase the VBS time
constant. If the votage drop of of bootstrap resistor
and diode is too high or the circuit topology does not
allow a sufficient charging time, a fast recovery or
ultra-fast recovery diode can be used.
The bootstrap capacitor, CBOOT, uses a low-ESR
capacitor, such as ceramic capacitor.

-100
-90
-80
-70

VS [V]

-60
-50
-40
-30
-20
-10
0
0

100

200

300

400

500

600

700

800

900 1000

Pulse Width [ns]

Figure 38. Negative VS Transient Chracteristic


Even though the FAN7392 has been shown able to handle these negative VS tranient conditions, it is strongly
recommended that the circuit designer limit the negative
VS transient as much as possible by careful PCB layout
to minimized the value of parasitic elements and component use. The amplitude of negative VS voltage is proportional to the parasitic inductances and the turn-off
speed, di/dt, of the switching device.

It is stongly recommended that the placement of components is as follows:


Place components tied to the floating voltage pins (VB

and VS) near the respective high-voltage portions of


the device and the FAN7392. NC (not connected) pins
in this package maximize the distance between the
high-voltage and low-voltage pins (see Figure 5).
Place and route for bypass capacitors and gate resistors as close as possible to gate drive IC.
Locate the bootstrap diode, DBOOT, as close as possible to bootstrap capacitor, CBOOT.
The bootstrap diode must use a lower forward voltage
drop and minimal switching time as soon as possible
for fast recovery or ultra-fast diode.

General Guidelines
Printed Circuit Board Layout
The relayout recommended for minimized parasitic elements is as follows:
Direct tracks between switches with no loops or devia-

tion.
Avoid interconnect links. These can add significant

inductance.
Reduce the effect of lead-inductance by lowering

package height above the PCB.


Consider co-locating both power switches to reduce

track length.
To minimize noise coupling, the ground plane should

not be placed under or near the high-voltage floating


side.
To reduce the EM coupling and improve the power
switch turn-on/off performance, the gate drive loops
must be reduced as much as possible.

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
15

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Placement of Components

19.56
18.80

14

8
6.60
6.09

(1.74)

8.12
7.62

1.77
1.14

3.56
3.30

0.35
0.20

5.33 MAX
0.38 MIN

3.81
3.17

0.58
0.35

8.82

2.54

NOTES: UNLESS OTHERWISE SPECIFIED


THIS PACKAGE CONFORMS TO
A) JEDEC MS-001 VARIATION BA
B) ALL DIMENSIONS ARE IN MILLIMETERS.
DIMENSIONS ARE EXCLUSIVE OF BURRS,
C) MOLD FLASH, AND TIE BAR EXTRUSIONS.
D) DIMENSIONS AND TOLERANCES PER
ASME Y14.5-1994
E) DRAWING FILE NAME: MKT-N14AREV7
Figure 39. 14-Lead Dual In-Line Package (DIP)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
16

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Physical Dimensions

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

Physical Dimensions (Continued)


.
10.300.20

9.44

8.890
16

7.500.10
9.2 10.95

10.325

1
PIN ONE
INDICATOR

0.51
0.35
0.25

8
1.27
M

1.75 TYP

C B A

0.55 TYP
1.27 TYP
LAND PATTERN RECOMMENDATION

SEE DETAIL A

2.65 MAX

0.33
0.20

C
0.10 C
0.200.10

0.75
0.25

SEATING PLANE

X 45

(R0.10)
GAGE PLANE
(R0.10)
0.25

8
0

NOTES: UNLESS OTHERWISE SPECIFIED


A) THIS PACKAGE CONFORMS TO JEDEC
MS-013, ISSUE E, DATED SEPT 2005.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
pdip8_dim.pdf
D) LANDPATTERN STANDARD: SOIC127P1030X265-16L
E) DRAWING FILENAME: MKT-16Brev2

SEATING PLANE

0.40~1.27
(1.40)

DETAIL A
SCALE: 2:1

M16BREV2

Figure 40. 16-Lead Small Outline Package (SOP)


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
17

FAN7392 High-Current, High- and Low-Side, Gate-Drive IC

2009 Fairchild Semiconductor Corporation


FAN7392 Rev. 1.0.2

www.fairchildsemi.com
18

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