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    Electronics I - Laboratory 7 Field Effect Transistors 3. SE: Equipment

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    Eva Natalia
    The document describes an experiment performed by Eva Natalia and Shu Xiao Liu on December 16, 2016 to analyze the characteristics of a junction field effect transistor (JFET). The equipment used included power sources, resistors, an oscilloscope, capacitors, a function generator and an ammeter. The experiments measured the drain characteristic curve, transfer characteristic curve, and gain of a JFET amplifier across varying frequencies. Data was collected and graphs were plotted of current versus voltage and gain versus frequency.

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    Electronics I - Laboratory 7 Field Effect Transistors 3. SE: Equipment

    Uploaded by

    Eva Natalia
    13 views6 pages
    The document describes an experiment performed by Eva Natalia and Shu Xiao Liu on December 16, 2016 to analyze the characteristics of a junction field effect transistor (JFET). The equipment used included power sources, resistors, an oscilloscope, capacitors, a function generator and an ammeter. The experiments measured the drain characteristic curve, transfer characteristic curve, and gain of a JFET amplifier across varying frequencies. Data was collected and graphs were plotted of current versus voltage and gain versus frequency.

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    The document describes an experiment performed by Eva Natalia and Shu Xiao Liu on December 16, 2016 to analyze the characteristics of a junction field effect transistor (JFET). The equipment used included power sources, resistors, an oscilloscope, capacitors, a function generator and an ammeter. The experiments measured the drain characteristic curve, transfer characteristic curve, and gain of a JFET amplifier across varying frequencies. Data was collected and graphs were plotted of current versus voltage and gain versus frequency.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    13 views6 pages

    Electronics I - Laboratory 7 Field Effect Transistors 3. SE: Equipment

    Uploaded by

    Eva Natalia
    The document describes an experiment performed by Eva Natalia and Shu Xiao Liu on December 16, 2016 to analyze the characteristics of a junction field effect transistor (JFET). The equipment used included power sources, resistors, an oscilloscope, capacitors, a function generator and an ammeter. The experiments measured the drain characteristic curve, transfer characteristic curve, and gain of a JFET amplifier across varying frequencies. Data was collected and graphs were plotted of current versus voltage and gain versus frequency.

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    © All Rights Reserved
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    Electronics I Laboratory 7

    Field Effect Transistors


    3. SE
    Name : Eva Natalia

    Lab Partner : Shu Xiao Liu

    Date : December 16, 2016

    Equipment :

    1. Two DC power source (0-30 V)


    2. Resistors (1k, 2.2 M, 4.7 k , 470 )
    3. Oscilloscope
    4. Capacitor (2x 47 uF, 1 x 0.001 uF)
    5. Function generator (0-1MHz)
    6. JFETs ( these are n-chanel depletion mode junction FETs)
    7. D.C Ammeter (0-20mA)
    8. D.C Voltmeters (0-2V)

    Procedure :

    1. Drain Characteristic

    a. Construct the circuit like in figure 7-1 and connect the circuit with VGG and VDD
    must keeping at zero volts.
    b. We must keep VGG such that VGS = 0 volts. Now we vary VDD suct that VDS varies
    in steps of 1 volt up to 10 volts. Record and note down the corresponding drain
    current ID.
    c. Repeat the above experiment with VGS = -1 and -2 Vand tabulate the readings.
    d. Draw a graph VDS vs ID against VGS as parameter on graph.

    e. From the above graph calculate the drain resistance rd = | VDS.

    f. Now the amplification factor = gm x rd
    Data :

    V_GS=0V V_GS=-1V
    V_DD (V) V_DS(V) I_D (mA) I_D (uA) V_DD (V) V_DS(V) I_D (uA) I_D (mA)
    0 0.0006 0.58 580 0 0.0008 0.82 0.00082
    0.4 0.45 2.38 2380 0.4 0.49 240.7 0.2407
    1 1.1 7.37 7370 0.9 0.97 318.5 0.3185
    1.5 1.56 8.17 8170 1.5 1.56 379.8 0.3798
    2 2.12 8.6 8600 2 2.05 416.9 0.4169
    2.5 2.64 8.74 8740 2.5 2.56 450.3 0.4503
    3 3.06 8.79 8790 3 3.07 464.2 0.4642
    3.5 3.66 8.83 8830 3.4 3.52 470.7 0.4707
    4 4.17 8.861 8861 4 4.17 476.8 0.4768
    5 5.01 8.9 8900 5 5.1 486.6 0.4866
    6 6.14 8.92 8920 6 6.13 495.1 0.4951
    7 7.15 8.93 8930 7 7.18 506 0.506
    8 8.22 8.94 8940 8 8.19 524 0.524
    9 9.2 8.947 8947 9 9.23 535 0.535
    10.1 10.35 8.947 8947 10 10.28 543 0.543
    r_d 191.7098 r_d 4114.201

    V_GS=-2V
    V_DD (V) V_DS(V) I_D (uA) I_D (mA)
    0 0.0009 0 0
    0.5 0.53 0.01 0.00001
    1.1 1.11 0.01 0.00001
    1.4 1.51 0.01 0.00001
    2 2.1 0.01 0.00001
    2.5 2.62 0.01 0.00001
    3 3.13 0.01 0.00001
    3.5 3.57 0.01 0.00001
    4 4.11 0.01 0.00001
    5 5.14 0.01 0.00001
    6 6.19 0.01 0.00001
    7 7.14 0.01 0.00001
    8 8.18 0.01 0.00001
    9 9.27 0.01 0.00001
    10.1 10.36 0.01 0.00001
    I_D to V_DS
    10
    9
    8
    7
    6
    I_D(MA)

    5
    4
    3
    2
    1
    0
    0 2 4 6 8 10 12
    V_DD(V)

    V_GS=0V V_GS=-1V V_GS=-2V

    Procedure :

    2. Transfer characteristic

    a. Set VGG and VDD at zero volts and keep VDS = 1 volt.
    b. Vary VGG such that VGS varies in steps of 0.5 volts. Note down the corresponding
    Drain current ID until ID = 0 mA and tabulate the readings.
    c. Repeat the above experiment for VDS = 3.0 volts and 5.0 volts and tabulate the
    readings.
    d. Draw graph between VGS vs ID with VDS as parameter.

    e. From graph , find the transconductance gm = | VDS .

    f. Now the amplification factor =gm x rd
    Data :

    V_DS(V)=1V V_GS(V) I_D(mA) V_DS(V)=3V V_GS(V) I_D(mA)


    1 0 7.14 3 0 8.55
    1 0.3 3.59 3 0.2 5.53
    1 0.5 2.79 3 0.5 2.91
    1 0.7 1.35 3 0.8 1.37
    1 1 0.219 gm 8.975
    gm 8.271429

    V_DS(V)=5V V_GS(V) I_D(mA)


    5 0 8.62
    5 0.3 5.03
    5 0.5 3.43
    5 0.7 1.45
    5 1 0.47
    5 1.2 0.114

    I_D to V_GS
    10
    9
    8
    7
    6
    I_D(MA)

    5
    4
    3
    2
    1
    0
    0 0.2 0.4 0.6 0.8 1 1.2 1.4
    V_GS(V)

    V_DS(V)=1V V_DS(V)=3V V_DS(V)=5V


    Procedure :

    3. JFET amplifier (Common source)

    a. Connect the circuit as in figure 7-3.


    b. Keep the input voltage at 100 mV.
    c. Vary the frequency from 50 Hz to 1 MHz in appropriate steps and note down
    the corresponding source voltage VS and the output voltage VO in a tabular form.
    d. Plot the frequency (f) Vs Gain (Av) as in fig.7-4 and determine the Bandwidth
    from the graph.

    Data :

    V_in=100mV
    f(Hz) V_in(mv) V_out(mV) gain(dB)
    50 100 250 7.9588002
    100 100 340 10.629578
    500 100 350 10.881361
    1000 100 350 10.881361
    5000 100 360 11.12605
    10000 100 370 11.364034
    50000 100 370 11.364034
    100000 100 370 11.364034
    200000 100 280 8.9431606
    300000 100 240 7.6042248
    400000 100 200 6.0205999
    500000 100 170 4.6089784
    1000000 100 100 0

    gain(dB)
    12
    10
    GAIN(DB)

    8
    6
    4
    2
    0
    1 10 100 1000 10000 100000 1000000
    FREQUENCY(HZ)

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