FFPF60B150DS

FFPF60B150DS

Features
High voltage and high reliability
High speed switching
Modulation diode / Damper diode
Low conduction loss
Modulation diode / Damper diode
TO-220F
1 2 3
Applications
Damper Modulation
(Modulation + Damper) diode designed for
horizontal deflection circuits in C-TVs &
monitors

DAMPER + MODULATION DIODE

Absolute Maximum Ratings (Modulation) TC=25C unless otherwise noted
Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 100C 20 A
IFSM Non-repetitive Peak Surge Current 120 A
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 C

Absolute Maximum Ratings (Damper) TC=25C unless otherwise noted

Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 1500 V
IF(AV) Average Rectified Forward Current @ TC = 100C 6 A
IFSM Non-repetitive Peak Surge Current 60 A
60Hz Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 C

Thermal Characteristics
Symbol Parameter Value Units
RJC Maximum Thermal Resistance, Junction to Case 3.3 C/W

2001 Fairchild Semiconductor Corporation Rev. A, March 2001

 FFPF60B150DS
Electrical Characteristics*(Modulation) TC=25 C unless otherwise noted
Symbol Parameter Min. Typ. Max. Units
VFM Maximum Instantaneous Forward Voltage V

IF = 20A TC = 25 C 2.2
IF = 20A TC = 100 C 2.0
IRM Maximum Instantaneous Reverse Current A
@ rated VR TC = 25 C 10
TC = 100 C 100
trr Maximum Reverse Recovery Time 90 ns
Irr Maximum Reverse Recovery Current 8 A
Qrr Maximum Reverse Recovery Charge 360 nC
(IF =20A, di/dt = 200A/s)

* Pulse Test: Pulse Width=300s, Duty Cycle=2%

Electrical Characteristics*(Damper) TC=25 C unless otherwise noted

Symbol Parameter Min Typ Max Units
VFM Maximum Instantaneous Forward Voltage V

IF = 6A TC = 25 C 1.6
IF = 6A TC = 100 C 1.4
IRM Maximum Instantaneous Reverse Current A
@ rated VR TC = 25 C 7
TC = 100 C 60
trr Maximum Reverse Recovery Time 170 ns
(IF =1.0A, di/dt = 50A/s)
tfr Maximum Forward Recovery Time 350 ns
(IF =6.5A, di/dt = 50A/s)
VFRM Maximum Forward Recovery Voltage 17 V

* Pulse Test: Pulse Width=300s, Duty Cycle=2%

2001 Fairchild Semiconductor Corporation Rev. A, March 2001

 FFPF60B150DS
Typical Characteristics

40 50
Forward Current , IF [A]

10

[A]
o 10
TC = 100 C

F
Forward Current , I
o
TJ = 125 C
o
TC = 25 C

1 1
o
TJ = 25 C

0.1 0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.4 0.8 1.2 1.6 2.0

Forward Voltage , VF [V] Forward Voltage , VF [V]

Figure 1. Typical Forward Characteristics Figure 2. Typical Forward Characteristics

(Modulation Diode) (Damper Diode)

1000 100

100
[uA]

10
[A]

o
TC = 100 C
o
R

TJ = 125 C
R

10
Reverse Current , I

Reverse Current , I

1
o
TC = 25 C TJ = 100 C
o
0.1
0.1
o
TJ = 25 C
0.01
0.01

0.001 0.001
100 200 300 400 500 600 0 300 600 900 1200 1500

Reverse Voltage , VR [V] Reverse Voltage , VR [V]

Figure 3. Typical Reverse Current Figure 4. Typical Reverse Current

vs. Reverse Voltage (Modulation Diode) vs. Reverse Voltage (Damper Diode)

200 120
Typical Capacitance Typical Capacitance
at 0V = 178 pF at 0V = 100 pF
100
150
Capacitance , Cj [pF]

Capacitance , Cj [pF]

80

100 60

40
50
20

1 0
0.1 1 10 100 0.1 1 10 100

Reverse Voltage , VR [V] Reverse Voltage , VR [V]

Figure 5. Typical Junction Capacitance Figure 6. Typical Junction Capacitance

(Modulation Diode) (Damper Diode)

2001 Fairchild Semiconductor Corporation Rev. A, March 2001

 FFPF60B150DS
Typical Characteristics

100 400
IF = 20A
o
Reverse Recovery Time , t rr [ns]

[ns]
90 TC = 25 C di/dt = 50A/s

rr
300

Reverse Recovery Time , t

80

70 200

di/dt = 100A/s
60
100
50

40 0
100 500 1 2 3 4 5 6 7 8 9 10
di/dt [A/us] Forward Current , IF [A]

Figure 7. Typical Reverse Recovery Time Figure 8. Typical Reverse Recovery Time
vs. di/dt (Modulation Diode) vs. di/dt (Damper Diode)

16 10
[A]
IF = 20A 9
F(AV)
14
Reverse Recovery Current , Irr [A]

o
TC = 25 C
8
Average Forward Current , I

12
7
10 6

DC
8 5

4
6
3
4
2

2 1

0 0
100 500 80 100 120 140 160
o
di/dt [A/us] Case Temperature , TC [ C]

Figure 9. Typical Reverse Recovery Current Figure 10. Forward Current Derating Curve
vs. di/dt (Modulation Diode) (Damper Diode)

30
[A] F(AV)

25
Average Forward Current , I

20
DC

15

10

0
60 80 100 120 140 160
o
Case Temperature , TC [ C]

Figure 11. Forward Current Derating Curve

(Modulation Diode)

2001 Fairchild Semiconductor Corporation Rev. A, March 2001

 FFPF60B150DS
Package Dimensions

TO-220F
3.30 0.10

10.16 0.20 3.18 0.10 2.54 0.20

(7.00) (0.70)

6.68 0.20

15.87 0.20
15.80 0.20

(1.00x45)

MAX1.47
9.75 0.30

0.80 0.10
(3
0
)

#1
0.35 0.10 +0.10
0.50 0.05 2.76 0.20
2.54TYP 2.54TYP
[2.54 0.20] [2.54 0.20]
4.70 0.20

9.40 0.20

Dimensions in Millimeters

2001 Fairchild Semiconductor Corporation Rev. A, March 2001

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation Rev. H1