Ding 2013
Ding 2013
Ding 2013
1188∼1193
Analytical Models for the Electric Potential, Threshold Voltage and Drain
Current of Long-channel Junctionless Double-gate Transistors
Shuyan Hu
School of Electronics and Information, Tongji University, Shanghai, P. R. China 200092
Xing Zhou
School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798
Analytical models for the electric potential, threshold voltage and drain current of long-channel
junctionless (JL) double-gate (DG) field-effect transistors (FET) are presented. A regional method
is used to solve the Poisson equation under different gate biases, and the electric potential is
obtained. With the potential model, an analytical expression for the threshold voltage is achieved.
An expression for the drain current is derived from the potential model. The analytical results are
compared with simulations, and excellent agreements are observed. The models accurately describe
the characteristics of JLDG FETs, and they are very helpful for the design and optimization of
devices.
charges, the model addressed here applies only to a de- With the boundary conditions that φ(0) = φc , φ(x0 ) =
vice with a heavily-doped channel. V − Vt and Eq. (3), the solution to Eq. (7) is
⎧
⎪
⎨ V + (φc − V ) cosh x qND /εsi Vt , |x| < x0 (8a)
φ=
⎪ qN
⎩ − D (|x| − x0 )2 − E0 (|x| − x0 ) + V − Vt , x0 ≤ |x| ≤ tsi /2 , (8b)
2εsi
2. Drain Current (A) For V < C, which corresponds to the NFB condi-
tion, φs can be obtained with Eq. (15), and the expres-
We will obtain the drain current in the linear region sion for Qn (V ) can be obtained as
and the subthreshold region separately.
(i) In the linear region, when VG > Vth and Vds < Vsat , γ−1
Qn (V ) = 2Cox (VG − VF B − V ) − qND tsi , (21)
the drain current can be expressed as γ+1
Vds
W where γ = (1/Cox )(qεsi ND /Vt )1/2 . The first term on
Ids = µef f [−Qn (V )] dV , (19)
L 0 the RHS in Eq. (21) is much smaller than qND tsi in the
Qn (V ) = −qND tsi + 2Cox (VF B + φs − VG ) . (20) NFB condition, so we have Qn (V ) ≈ −qND tsi .
Qn (V ) is the charge density per unit area. The first term
on the right-hand side (RHS) of Eq. (20) is the negative (B) For V ≥ C, which corresponds to the PD condi-
charge from the ionized donor atoms. The second term tion, we obtain φs from Eq. (8). With Eq. (20), Qn (V )
describes the charge induced in the silicon by the gate can be expressed as
voltage, which may be positive or negative, depending
on the gate bias. W is the channel width, and µef f is Qn (V ) = 2εsi E0 − 2qND x0 . (22)
the effective electron mobility. The surface potential can
be obtained by substituting x = tsi /2 into Eqs. (8) and Substituting Eqs. (21) and (22) into Eq. (19) and finish-
(16); then, Qn (V ) can be obtained with Eq. (20). There ing the integral, we obtain an analytical expression for
are two conditions: the drain current in the linear region:
V =Vds
W 8εsi Vt 16εsi Vt −BV (B 2 − 4AC)3/2
Ids = µef f qND tsi Vds + H (Vds − V0 ) + H + 2qND + , (23)
L tsi t2si 2A 12A2 V =V0
where V0 = C for C > 0; otherwise, V0 = 0. H = 0 if where xa = (2/k)1/2 . When x > xa , the second term
Vds < V0 ; otherwise, H = 1. on the RHS of Eq. (26) is small enough to be neglected.
For x < xa , we use 1 − (x/xa )(1 − exp(−2)) to approx-
(ii) Now we will obtain the drain current in the sub- imate exp(−kx2 ); the approximation can be justified by
threshold region. In the subthreshold region (VG < Vth ), numerical computations. Therefore, the integral can be
the electron charge density can be expressed as finished:
tsi /2 tsi /2 xa √
2 2
e−kx dx ≈ e−kx dx ≈ (1+e−2 )/ 2k . (27)
φ−V
Qn (V ) = −2 qND e Vt dx . (24)
0 0 0
Because now the device is fully depleted, φ can be The analytical expression for subthreshold current is
1 + e−2
obtained with Eq. (5). Substituting Eq. (24) into Eq.
(19), the subthreshold current is W
−Vds /Vt
Isub = 2qVt ND µef f 1−e √
W
L 2k
1 − e−Vds /Vt
Isub = 2qVt ND µef f
L 1 qND t2si qND tsi
× exp + VG − VF B + (28)
tsi /2 Vt 8εsi 2Cox
2
× e−kx dx
0
1 qND t2si qND tsi
× exp + V G − VF B + , IV. VERIFICATION
Vt 8εsi 2Cox
(25)
In order to verify the models, we compare the analytic
where k = qND /(2εsi Vt ). To obtain an analytical ex- results with the Medici simulations. The doping concen-
pression, we approximate the integral in Eq. (25) as tration ND is 1019 cm−3 , which is a typical value for a
tsi /2 xa tsi /2 JL device. The effective electron mobility is set to be
2 2 2 µef f = 85 cm2 /V·s. We use a p+ polysilicon gate, and
e−kx dx = e−kx dx+ e−kx dx . (26)
0 0 xa the corresponding flat-band voltage is VF B = 1.09 V.
-1192- Journal of the Korean Physical Society, Vol. 62, No. 8, April 2013
Analytical models for the channel potential, thresh- [4] J.-P. Colinge, C.-W. Lee, I. Ferain, N. D. Akhavan, R.
old voltage and drain current of JLDG MOSFETs are Yan, P. Razavi, R. Yu, A. N. Nazarov and R. T. Doria,
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The precious support from National Natural Sci- [11] X. Jin, X. Liu, M. Wu, R. Chuai, J.-H. Lee and J.-H.
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