Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • Tsmc018 Info

    Uploaded by

    Sure Avinash
    306 views2 pages
    This report summarizes test results for a wafer lot from TSMC using their 0.18 micron technology. Transistor parameters such as threshold voltage, drive current, and field mobility are provided for n-channel and p-channel devices. Sheet resistance and contact resistance values are given for various layers. Capacitance parameters including area capacitance and fringe capacitance are reported for different device regions. Circuit characterization results like inverter gain and ring oscillator frequency and power are also included.

    Original Description:

    Model file of an MOSFET

    Copyright

    © © All Rights Reserved

    Available Formats

    TXT, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    This report summarizes test results for a wafer lot from TSMC using their 0.18 micron technology. Transistor parameters such as threshold voltage, drive current, and field mobility are provided for n-channel and p-channel devices. Sheet resistance and contact resistance values are given for various layers. Capacitance parameters including area capacitance and fringe capacitance are reported for different device regions. Circuit characterization results like inverter gain and ring oscillator frequency and power are also included.

    Copyright:

    © All Rights Reserved
    Download as TXT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as txt, pdf, or txt
    306 views2 pages

    Tsmc018 Info

    Uploaded by

    Sure Avinash
    This report summarizes test results for a wafer lot from TSMC using their 0.18 micron technology. Transistor parameters such as threshold voltage, drive current, and field mobility are provided for n-channel and p-channel devices. Sheet resistance and contact resistance values are given for various layers. Capacitance parameters including area capacitance and fringe capacitance are reported for different device regions. Circuit characterization results like inverter gain and ring oscillator frequency and power are also included.

    Copyright:

    © All Rights Reserved
    Download as TXT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as txt, pdf, or txt
    of 2

    MOSIS WAFER ACCEPTANCE TESTS

    RUN: T68B (MM_NON-EPI) VENDOR: TSMC


    TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns
    Run type: SKD

    INTRODUCTION: This report contains the lot average results obtained by MOSIS
    from measurements of MOSIS test structures on each wafer of
    this fabrication lot. SPICE parameters obtained from similar
    measurements on a selected wafer are also attached.

    COMMENTS: DSCN6M018_TSMC

    TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS

    MINIMUM 0.27/0.18
    Vth 0.50 -0.51 volts

    SHORT 20.0/0.18
    Idss 547 -250 uA/um
    Vth 0.51 -0.51 volts
    Vpt 4.8 -5.6 volts

    WIDE 20.0/0.18
    Ids0 14.4 -4.7 pA/um

    LARGE 50/50
    Vth 0.43 -0.42 volts
    Vjbkd 3.1 -4.3 volts
    Ijlk <50.0 <50.0 pA

    K' (Uo*Cox/2) 175.4 -35.6 uA/V^2


    Low-field Mobility 416.52 84.54 cm^2/V*s

    COMMENTS: Poly bias varies with design technology. To account for mask
    bias use the appropriate value for the parameters XL and XW
    in your SPICE model card.
    Design Technology XL (um) XW (um)
    ----------------- ------- ------
    SCN6M_DEEP (lambda=0.09) 0.00 -0.01
    thick oxide 0.00 -0.01
    SCN6M_SUBM (lambda=0.10) -0.02 0.00
    thick oxide -0.02 0.00

    FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS


    Vth Poly >6.6 <-6.6 volts

    PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS


    Sheet Resistance 6.7 7.8 8.0 59.7 313.6 0.08 0.08 ohms/sq
    Contact Resistance 10.6 11.0 10.0 4.79 ohms
    Gate Oxide Thickness 41 angstrom

    PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS


    Sheet Resistance 0.08 0.08 0.08 0.03 930 ohms/sq
    Contact Resistance 9.24 14.05 18.39 20.69 ohms

    COMMENTS: BLK is silicide block.

    CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS


    Area (substrate) 942 1163 106 34 14 9 6 5 3 123 125 aF/um^2
    Area (N+active) 8484 55 20 13 11 9 8 aF/um^2
    Area (P+active) 8232 aF/um^2
    Area (poly) 66 17 10 7 5 4 aF/um^2
    Area (metal1) 37 14 9 6 5 aF/um^2
    Area (metal2) 35 14 9 6 aF/um^2
    Area (metal3) 37 14 9 aF/um^2
    Area (metal4) 36 14 aF/um^2
    Area (metal5) 34 984 aF/um^2
    Area (r well) 920 aF/um^2
    Area (d well) 582 aF/um^2
    Area (no well) 137 aF/um^2
    Fringe (substrate) 212 235 41 35 29 21 14 aF/um
    Fringe (poly) 70 39 29 23 20 17 aF/um
    Fringe (metal1) 52 34 22 19 aF/um
    Fringe (metal2) 48 35 27 22 aF/um
    Fringe (metal3) 53 34 27 aF/um
    Fringe (metal4) 58 35 aF/um
    Fringe (metal5) 55 aF/um
    Overlap (N+active) 895 aF/um
    Overlap (P+active) 737 aF/um

    CIRCUIT PARAMETERS UNITS


    Inverters K
    Vinv 1.0 0.74 volts
    Vinv 1.5 0.78 volts
    Vol (100 uA) 2.0 0.08 volts
    Voh (100 uA) 2.0 1.63 volts
    Vinv 2.0 0.82 volts
    Gain 2.0 -23.72
    Ring Oscillator Freq.
    D1024_THK (31-stg,3.3V) 300.36 MHz
    DIV1024 (31-stg,1.8V) 363.77 MHz
    Ring Oscillator Power
    D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate
    DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate

    You might also like