1gb Nand Spi M68a

Micron Confidential and Proprietary
1Gb x1: SPI NAND Flash Memory

Features
NAND Flash Memory

Serial Peripheral Interface (SPI)
MT29F1G01AAADD
Features Table 1: NAND Flash SPI Parameters

• Single-level cell (SLC) technology
• Organization Parameters Value
– Page size x1: 2112 bytes (2048 + 64 bytes) VCC range 2.7–3.6V
– Block size: 64 pages (128K + 4K bytes) Frequency 50 MHz
– Plane size: 1 planes with 1024 blocks
Transfer rate 20ns
– Device size: 1Gb: 1024 blocks
• Data retention: 10 years Loading throughput 50 MT/s
• New commands tBERS (BLOCK ERASE) 700µs (TYP)
– Instruction, address on 1 pin; data out on 1, 2, or tPROG (PAGE PROGRAM) 220µs (TYP)
4 pins tRD (PAGE READ) 70µs (MAX)
Options Internal ECC correction 4-bit

• Density: 1Gb Width x1, x2, x4
• Operating temperature
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
• Package
– 63-ball VFBGA, lead-free, (9mm x 11mm)
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1gb_nand_spi_m68a.pdf – Rev. L 2/17 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

Features
Part Numbering Information

Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Number Chart

MT 29F 1G 01 A A A D D H4 IT ES :D
Micron Technology Design Revision (shrink)

D = Fourth revision
Product Family
29F = NAND Flash memory Production Status
Blank = Production
Density ES = Engineering sample
1G = 1Gb
Special Options
Device Width Blank
01 = 1-bit X = Product longevity program (PLP)
Level Operating Temperature Range

A = SLC IT = Industrial (–40°C to +85°C)
Classification Speed Grade

Mark Die nCE RnB I/O Channels Blank if no speed grade is defined
A 1 0 0 1
Package Code
Operating Voltage Range H4 = 63-ball VFBGA (9mm x 11mm x 1.0mm)
A = 3.3V (2.7–3.6V)
Interface
Generation Feature Set D = SPI
D = Fourth set of device features
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Features
Contents
General Description ......................................................................................................................................... 7
Architecture ..................................................................................................................................................... 8
Ball Assignments and Descriptions ................................................................................................................... 9
Memory Mapping ........................................................................................................................................... 11
Array Organization ......................................................................................................................................... 11
Bus Operation ................................................................................................................................................ 12
SPI Modes .................................................................................................................................................. 12
CS# ............................................................................................................................................................ 12
SCK ........................................................................................................................................................... 12
HOLD#/SO3 ............................................................................................................................................... 12
SI/SO0 ....................................................................................................................................................... 13
WP#/SO2 ................................................................................................................................................... 13
SO/SO1 ...................................................................................................................................................... 13
SPI NAND Command Definitions .................................................................................................................... 14
WRITE Operations ...................................................................................................................................... 15
WRITE ENABLE (06h) ............................................................................................................................. 15
WRITE DISABLE (04h) ............................................................................................................................ 15
Features Operations ................................................................................................................................... 15
GET FEATURES (0Fh) and SET FEATURES (1Fh) ...................................................................................... 15
READ Operations ....................................................................................................................................... 17
PAGE READ (13h) ................................................................................................................................... 17
READ ID (9Fh) ............................................................................................................................................ 21
Unique ID Page .......................................................................................................................................... 22
Parameter Page Command ......................................................................................................................... 23
Parameter Page Data Structure .................................................................................................................... 23
Program Operations ................................................................................................................................... 25
PAGE PROGRAM .................................................................................................................................... 25
RANDOM DATA PROGRAM .................................................................................................................... 28
INTERNAL DATA MOVE ......................................................................................................................... 29
Block Operations ............................................................................................................................................ 29
BLOCK ERASE (D8h) .................................................................................................................................. 29
Block Lock Feature ..................................................................................................................................... 31
One-Time Programmable (OTP) Feature ...................................................................................................... 31
Status Register ............................................................................................................................................ 32
Error Management ......................................................................................................................................... 34
ECC Protection ............................................................................................................................................... 35
Power-Up ....................................................................................................................................................... 37
SPI Power-Up ............................................................................................................................................. 37
Electrical Specifications .................................................................................................................................. 38
Package Dimensions ....................................................................................................................................... 42
Revision History ............................................................................................................................................. 43
Rev. L – 2/16 ............................................................................................................................................... 43
Rev. K – 7/14 ............................................................................................................................................... 43
Rev. J – 10/13 .............................................................................................................................................. 43
Rev. I – 04/13 .............................................................................................................................................. 43
Rev. H – 03/13 ............................................................................................................................................. 43
Rev. G – 10/12 ............................................................................................................................................. 43
Rev. F – 11/11 ............................................................................................................................................. 43
Rev. E – 10/11 ............................................................................................................................................. 43
Rev. D – 05/11 ............................................................................................................................................. 43
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Features
Rev. C – 05/11 ............................................................................................................................................. 43

Rev. B – 02/11 ............................................................................................................................................. 43
Rev. A – 07/10 ............................................................................................................................................. 44
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Features
List of Figures
Figure 1: Part Number Chart ............................................................................................................................ 2
Figure 2: Functional Block Diagram ................................................................................................................. 8
Figure 3: 63-Ball VFBGA (SPI only) Ball Assignments ......................................................................................... 9
Figure 4: Memory Map .................................................................................................................................. 11
Figure 5: Array Organization .......................................................................................................................... 11
Figure 6: SPI Modes Timing ........................................................................................................................... 12
Figure 7: WRITE ENABLE (06h) Timing .......................................................................................................... 15
Figure 8: WRITE DISABLE (04h) Timing ......................................................................................................... 15
Figure 9: GET FEATURES (0Fh) Timing .......................................................................................................... 16
Figure 10: SET FEATURES (1Fh) Timing ......................................................................................................... 16
Figure 11: PAGE READ (13h) Timing ............................................................................................................... 18
Figure 12: READ FROM CACHE x1 (03h or 0Bh) Timing ................................................................................... 19
Figure 13: READ FROM CACHE x2 ................................................................................................................. 20
Figure 14: READ FROM CACHE x4 ................................................................................................................. 21
Figure 15: READ ID (9Fh) Timing ................................................................................................................... 22
Figure 16: PROGRAM LOAD (02h) Timing ...................................................................................................... 26
Figure 17: PROGRAM EXECUTE (10h) Timing ................................................................................................ 27
Figure 18: PROGRAM LOAD RANDOM DATA (84h) Timing ............................................................................. 28
Figure 19: BLOCK ERASE (D8h) Timing .......................................................................................................... 30
Figure 20: SPI Power-Up Timing ..................................................................................................................... 37
Figure 21: Alternative SPI Power-Up Timing ................................................................................................... 37
Figure 22: WP# Timing .................................................................................................................................. 40
Figure 23: Serial Input Timing ........................................................................................................................ 41
Figure 24: Serial Output Timing ..................................................................................................................... 41
Figure 25: Hold# Timing ................................................................................................................................ 41
Figure 26: 63-Ball VFBGA, Package Code H4 ................................................................................................... 42
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Features
List of Tables
Table 1: NAND Flash SPI Parameters ................................................................................................................ 1
Table 2: SPI Ball Descriptions ......................................................................................................................... 10
Table 3: SPI NAND Command Set .................................................................................................................. 14
Table 4: Features Settings .............................................................................................................................. 16
Table 5: READ ID Table .................................................................................................................................. 22
Table 6: Parameter Table ................................................................................................................................ 23
Table 7: Block Lock Register Block Protect Bits ................................................................................................ 31
Table 8: OTP States ........................................................................................................................................ 32
Table 9: Status Register Bit Descriptions ......................................................................................................... 32
Table 10: Error Management Details .............................................................................................................. 34
Table 11: ECC Protection ............................................................................................................................... 36
Table 12: ECC Status ...................................................................................................................................... 36
Table 13: Absolute Maximum Ratings ............................................................................................................. 38
Table 14: SPI Mode Electrical Characteristics .................................................................................................. 38
Table 15: DC Characteristics .......................................................................................................................... 38
Table 16: General Timing Characteristics (SPI) ............................................................................................... 38
Table 17: PROGRAM/READ/ERASE Timing Characteristics (SPI) ..................................................................... 39
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General Description
General Description
The serial peripheral interface (SPI) provides NAND Flash with a cost-effective non-vol-
atile memory storage solution in systems where pin count must be kept to a minimum.
It is also an alternative to SPI-NOR, offering superior write performance and cost per bit
over SPI-NOR.
SPI NAND Flash is an SLC NAND Flash memory device based on the standard parallel
NAND Flash. The serial electrical interface follows the industry-standard serial periph-
eral interface. New command protocols and registers are defined for SPI operation. The
command set resembles common SPI-NOR command sets, modified to handle NAND-
specific functions and added new features. New features include user-selectable inter-
nal ECC. SPI NAND Flash devices have six signal lines plus VCC and ground (GND). The
signal lines are SCK (serial clock), SI, SO (for command/response and data input/
output), and control signals CS, HOLD#, WP#. This hardware interface creates a low-
pin-count device with a standard pinout that remains the same from one density to an-
other, supporting future upgrades to higher densities without board redesign.
Each block of the serial NAND Flash device is subdivided into 64 programmable pages.
Each page consists of 2112 bytes. The pages are further divided into a 2048-byte data
storage region with a separate 64-byte spare area. The 64-byte area is typically used for
memory and error management functions. Refer to ECC Protection Table for available
user area when ECC is enabled.
With internal ECC enabled, ECC code is generated internally when a page is written to
the memory core. The ECC code is stored in the spare area of each page. When a page is
read to the cache register, the ECC code is calculated again and compared with the stor-
ed value. Errors are corrected if necessary. The device either outputs corrected data or
returns an ECC error status.
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Architecture
Architecture
These devices use an industry-standard NAND Flash memory core organized by page/
block. The standard parallel NAND Flash electrical interface and I/O logic are replaced
by an SPI interface. The new command protocol set is a modification of the SPI-NOR
command set common in the industry. The modifications are specifically to handle
functions related to NAND Flash architecture. The interface supports page and random
read/write and copy-back functions. The device also includes an internal ECC feature.
Data is transferred to or from the NAND Flash memory array, page by page, to a data
register and a cache register. The cache register is closest to I/O control circuits and acts
as a data buffer for the I/O data; the data register is closest to the memory array and acts
as a data buffer for the NAND Flash memory array operation.
The NAND Flash memory array is programmed and read in page-based operations; it is
erased in block-based operations. The cache register functions as the buffer memory to
enable the READ/WRITE operations. These devices also use a new SPI status register
that reports the status of device operation.
Figure 2: Functional Block Diagram
HOLD#/ WP#/
SCK SI/SO0 SO/SO1 CS# SO3 SO2
Serial NAND controller
Cache and NAND

VCC memory
data registers
core
VSS
ECC and status

registers
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Ball Assignments and Descriptions
Figure 3: 63-Ball VFBGA (SPI only) Ball Assignments
1 2 3 4 5 6 7 8 9 10
A DNU DNU DNU DNU
B DNU DNU DNU
C DNU DNU DNU DNU DNU DNU
D VCC DNU DNU DNU DNU DNU
E DNU DNU DNU DNU DNU DNU
F DNU DNU DNU DNU DNU DNU
G DNU DNU HOLD#/ VCC SO/ DNU

SO3 SO1
H DNU DNU DNU DNU DNU DNU
J DNU DNU DNU DNU SI/ WP#/

SO0 SO2
K VSS DNU DNU SCK CS# VSS
L DNU DNU DNU DNU
M DNU DNU DNU DNU
Top View, Ball Down
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Table 2: SPI Ball Descriptions
Symbol Type Description

CS# Input Chip select: Places the device in active power mode when driven LOW. Deselects the de-
vice and places SO at High-Z when HIGH. After power-up, the device requires a falling
edge on CS# before any command can be written. The device goes to standby mode
when no PROGRAM, ERASE, or WRITE STATUS REGISTER operation is in progress. Single
command and address sequences and array-based operations are registered on CS#.
SCK Input Serial clock: Provides serial interface timing. Latches commands, addresses, and data on
SI on the rising edge of SCK. Triggers output on SO after the falling edge of SCK.
HOLD#/SO3 I/O Hold: Pauses any serial communication with the device without deselecting it. When
driven LOW, SO is at High-Z, and all inputs at SI and SCK are ignored. Requires that CS#
also be driven LOW.
HOLD# must not be driven by the host during x4 read operations.

SI/SO0 I/O Serial data input:
Transfers data serially into the device. Device latches commands, addresses, and program
data on SI on the rising edge of SCK.
SI must not be driven by the host during x2 or x4 read operations.

WP#/SO2 I/O Write protect: When LOW, prevents overwriting block-lock bits if the block register
write disable (BRWD) bit is set.
WP# must not be driven by the host during x4 read operations.

SO/SO1 Output Serial data output: Transfers data serially out of the device on the falling edge of SCK.
VCC Supply VCC: Supply voltage
VSS Supply VSS: Ground
DNU – Do not use: DNUs must be left unconnected.
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Memory Mapping
Memory Mapping
Figure 4: Memory Map
Blocks
0 1 2 • • • • • • • • • • • • 1023
RA[15:6]
Pages
0 1 • • • • • • 63
RA[5:0]
Bytes
0 1 2 • • • • • • • • • • • • • • • • • • • • • • • • 2111
CA[11:0]
Notes: 1. The 12-bit column address is capable of addressing from 0 to 4095 bytes; however, only
bytes 0 through 2111 are valid. Bytes 2112 through 4095 of each page are “out of
bounds,” do not exist in the device, and cannot be addressed.
2. BA6 controls the plane selection.
Array Organization
Figure 5: Array Organization
2112 bytes
SO
Cache Register
2048 64 S1
Data Register 2048 64
1 page = (2K + 64) bytes
1 block = (2K + 64) bytes x 64 pages
1024 blocks 1 block

1 plane = 1024 blocks
per plane
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Bus Operation
Bus Operation
SPI Modes
SPI NAND supports two SPI modes:
• CPOL = 0, CPHA = 0 (Mode 0)
• CPOL = 1, CPHA = 1 (Mode 3)
Input data is latched in on the rising edge of SCK, and output data is available from the
falling edge of SCK for both modes.
When the bus master is in standby mode:
• SCK remains at 0 for (CPOL = 0, CPHA = 0 Mode 0)
• SCK remains at 1 for (CPOL = 1, CPHA = 1 Mode 3)
All timing diagrams shown in this data sheet are mode 0.

Multiple SPI modes are not allowed during array operations.
Figure 6: SPI Modes Timing

CPOL CPHA
0 0 SCK
1 1 SCK
SI MSB LSB
SO MSB LSB
CS#
Note: 1. While CS# is HIGH, keep SCK at VCC or GND (determined by mode 0 or mode 3). Do not
begin toggling SCK until after CS# is driven LOW.
CS#
Chip select (CS#) activates or deactivates the device. When CS goes LOW, the device is
placed in active mode. When CS is HIGH, the device is placed in inactive mode and SO
is High-Z.
SCK
Serial clock (SCK) provides interface timing for SPI NAND. Addresses, data, and com-
mands are latched on the rising edge of SCK. Data is placed on SO at the falling edge of
SCK. When CS# is HIGH, SCK must return either HIGH or LOW.
HOLD#/SO3
HOLD# input provides a method to pause serial communication with the device but
does not terminate any ERASE, READ, or WRITE operation currently in progress.
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Bus Operation
Hold mode starts at the falling edge of HOLD# provided SCK is also LOW. If SCK is HIGH
when HOLD# goes LOW, hold mode begins after the next falling edge of SCK. Similarly,
hold mode is exited at the rising edge of HOLD# provided SCK is also LOW. If SCK is
HIGH, hold mode ends after the next falling edge of SCK.
During hold mode, SO is High-Z, and SI and SCK inputs are ignored.
SO3 operation is enabled by issuing a READ FROM CACHE x4 command with data be-
ing clocked out of the device at the falling edge of SCK. During this time the host must
wait until the READ FROM CACHE x4 command is complete before driving HOLD#.
SI/SO0
Writes use serial data in (SI). Data, commands, and addresses are transferred on SI in x1
mode at the rising edge of SCK. SI must not be driven by the host during x2 or x4 read
operations.
SO0 operation is enabled by issuing a READ FROM CACHE x2 or x4 command with data
being clocked out of the device at the falling edge of SCK. During this time the host
must wait until the READ FROM CACHE x2 or x4 command is complete before driving
SI.
WP#/SO2
Write protect (WP#) prevents the block lock bits (BP0, BP1, and BP2) from being over-
written. If the BRWD bit is set to 1 and WP# is LOW, the block protect bits cannot be
altered. WP# must not be driven by the host during READ FROM CACHE x4 operations.
SO2 operation is enabled by issuing a READ FROM CACHE x4 command with data be-
ing clocked out of the device at the falling edge of SCK. During this time the host must
wait until the READ FROM CACHE x4 command is complete before driving WP#.
SO/SO1
Reads use serial data out (SO). Device reads are performed in x1, or x2, or x4 modes. SO
acts as the only output in x1 READ operations, and as SO1 in x2 and x4 read operations.
Data is clocked out of the device on SO at the falling edge of SCK control signals.
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SPI NAND Command Definitions
Table 3: SPI NAND Command Set
Address Dummy Data

Command Op Code Bytes Bytes Bytes Comments
BLOCK ERASE D8h 3 0 0 Block erase
GET FEATURE 0Fh 1 0 1 Get features
PAGE READ 13h 3 0 0 Array read
PROGRAM EXECUTE 10h 3 0 0 Enter block/page address, no data, ex-
ecute
PROGRAM LOAD 02h 2 0 1 to 2112 Load program data—2kB MAX
PROGRAM LOAD RANDOM DATA 84h 2 0 1 to 2112 Enter cache address/data
READ FROM CACHE x1 03h, 0Bh 2 1 1 to 2112 Output cache data at addr
READ FROM CACHE x2 3Bh 2 1 1 to 2112 Output cache data on SI and SO
READ FROM CACHE x4 6Bh 2 1 1 to 2112 Output cache data on SI, SO, WP#,
HOLD#
READ ID 9Fh 0 1 2 Read device ID
RESET FFh 0 0 0 Reset the device
SET FEATURE 1Fh 1 0 1 Set features
WRITE DISABLE 04h 0 0 0
WRITE ENABLE 06h 0 0 0
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WRITE Operations
WRITE ENABLE (06h)
The WRITE ENABLE (06h) command sets the WEL bit in the status register to 1. WRITE
ENABLE is required in the following operations that change the contents of the memo-
ry array:
• Page program
• OTP program
• BLOCK ERASE
Figure 7: WRITE ENABLE (06h) Timing

0 1 2 3 4 5 6 7
SCK
CS#
Command (06h)
SI
WRITE DISABLE (04h)
The WRITE DISABLE (04h) command clears the WEL bit in the status register to 0. This
disables the following operations:
• Page program
• OTP program
• BLOCK ERASE
Figure 8: WRITE DISABLE (04h) Timing

0 1 2 3 4 5 6 7
SCK
CS#
Command (04h)
SI
Features Operations
GET FEATURES (0Fh) and SET FEATURES (1Fh)
The GET FEATURES (0Fh) and SET FEATURES (1Fh) commands are used to alter the
device behavior from the default power-on behavior. These commands use a 1-byte fea-
ture address to determine which feature is to be read or modified. Features such as OTP
and block locking can be enabled or disabled by setting specific bits in feature address
A0h and B0h (shown in the following table). The status register is mostly read, except
WEL, which is a writable bit with the WRITE ENABLE (06h) command.
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When a feature is set, it remains active until the device is power cycled or the feature is
written to. Unless otherwise specified in the following table, once the device is set, it re-
mains set, even if a RESET (FFh) command is issued.
Table 4: Features Settings
Data Bits
Register Address 7 6 5 4 3 2 1 0
Block lock A0h BRWD1 Reserved BP2 BP1 BP0 Reserved Reserved Reserved
OTP B0h OTP OTP Reserved ECC Enable Reserved Reserved Reserved Reserved
Protect Enable
Status C0h Reserved Reserved ECC Status ECC Status P_Fail E_Fail WEL OIP
Note: 1. If BRWD is enabled and WP# is LOW, then the block lock register cannot be changed.
Figure 9: GET FEATURES (0Fh) Timing

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
CS#
Command (0Fh) 1 byte address
SI 7 6 5 4 3 2 1 0
MSB Data byte
SO High-Z 7 6 5 4 3 2 1 0
MSB
Don’t Care
Figure 10: SET FEATURES (1Fh) Timing

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
CS#
Command (1Fh) 1 byte address Data byte
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB
Don’t Care
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READ Operations
PAGE READ (13h)
The PAGE READ (13h) command transfers the data from the NAND Flash array to the
cache register. The command sequence is follows:
• 13h (PAGE READ to cache)
• 0Fh (GET FEATURES command to read the status)
• 0Bh or 03h (READ FROM CACHE x1)
The PAGE READ command requires a 24-bit address consisting of 8 dummy bits fol-
lowed by a 16-bit block/page address. After the block/page addresses are registered, the
device starts the transfer from the main array to the cache register, and is busy for tRD
time. During this time, the GET FEATURE (0Fh) command can be issued to monitor the
status of the operation. Following a status of successful completion, the READ FROM
CACHE command can be issued in order to read the data out of the cache. The READ
FROM CACHE command requires 3 dummy bits, followed by a plane select and a 12-bit
column address for the starting byte address. The starting byte address can be 0 to 2111,
but after the end of the cache register is reached, the data does not wrap around and SO
goes to a High-Z state. Refer to Figure 11 (page 18) and Figure 12 (page 19) to view
the entire READ operation.
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Figure 11: PAGE READ (13h) Timing

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (13h) Address bits
SI 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6
Note 1
SO High-Z
23 24 25 26 27 28 29 30 31 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
CS#
Address bits tCS GET FEATURES (0Fh) Status register address (C0h)
SI 8 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB
SO High-Z
1 2
13 14 15 16 17 18 19 20 21 22 23
SCK
CS#
2 1 0
SI
Status register data out Status register data out
SO 0
7 6
0 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB
2 Don’t Care
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Figure 12: READ FROM CACHE x1 (03h or 0Bh) Timing

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (03h or 0Bh) 3 dummy bits 12-bit column address 1 dummy byte
SI 0 0 0 12 11 10 9 8 7 6 5 4 3 2 1 0
MSB
Plane select
SO High-Z
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 17431... 17439
SCK
CS#
1 dummy byte
SI 0 High-Z
Data out 1 Data out 2176
SO High-Z 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB
1 Don’t Care
Note: Plane select is a dummy bit for 1Gb devices.
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Figure 13: READ FROM CACHE x2

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (3Bh) 3 dummy bits 12-bit column address 1 dummy byte
SI 0 0 0 12 11 10 9 8 7 6 5 4 3 2 1 0
MSB
Plane select
SO High-Z
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 8471... 8479
SCK
CS#
1 dummy byte SI switches from input to output
SI High-Z 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
SO High-Z 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
Data out 1 Data out 2 Data out 2111 Data out 2112
1
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Figure 14: READ FROM CACHE x4

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (6Bh) 3 dummy bits 12-bit column address 1 dummy byte
SI/
0 0 0 12 11 10 9 8 7 6 5 4 3 2 1 0
SO0
MSB
Plane select
SO/
High-Z
SO1
WP#/
High-Z
SO2
HOLD#/
High-Z
SO3
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SCK
CS#
1 dummy byte SI switches from input to output

SI/
High-Z 4 0 4 0 4 0 4 0 4
SO0
SO/
High-Z 5 1 5 1 5 1 5 1 5
SO1
WP#/ High-Z 6 2 6 2 6 2 6 2 6
SO2
HOLD#/
High-Z 7 3 7 3 7 3 7 3 7
SO3
Byte 1 Byte 2 Byte 3 Byte 4
1
READ ID (9Fh)
The READ ID command is used to read the 2 bytes of identifier code programmed into
the NAND Flash device. The READ ID command reads a 2-byte table (see below) that
includes the Manufacturer ID and the device configuration.
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Table 5: READ ID Table
Byte Description I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 Value
Byte 0 Manufacturer ID (Micron) 0 0 1 0 1 1 0 0 2Ch
Byte 1 Device ID (SPI) 0 0 0 1 0 0 1 0 12h
Figure 15: READ ID (9Fh) Timing
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (9Fh) Dummy byte
SI 0 0 0 0 0 0 0 0
Manufacturer ID Device ID
SO High-Z 7 6
MSB
23 24 25 26 27 28 29 30 31 1
SCK
CS#
SI
Device ID
SO 7 6 5 4 3 2 1 0
MSB
1 Don’t Care
Unique ID Page
The following command flow must be issued by the memory controller to access the
uniqueID page contained within Micron SPI devices:
1. Issue a SET FEATURES (1Fh) command with a feature address of B0h and data
value of 40h (OTP enable, ECC disable).
2. Issue a PAGE READ (13h) command with a block/page address of 0x00h, and then
check the status of the read completion using the GET FEATURES (0Fh) command
with a feature address of C0h.
3. Issue a READ FROM CACHE (03h) command with an address of 0x00h to read the
data out of the NAND device. (The contents of the uniqueID page are described in
the following note.)
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Note: The device stores 16 copies of the unique ID data. Each copy is 32 bytes; the
first 16 bytes are unique data, and the second 16 bytes are the complement of the
first 16 bytes. The host should XOR the first 16 bytes with the second 16 bytes. If
the result is 16 bytes of FFh, then that copy of the unique ID data is correct. If a
non-FFh result is returned, the host can repeat the XOR operation on a subse-
quent copy of the unique ID data.
4. To exit reading the uniqueID page, issue a SET FEATURES (1Fh) command with a
feature address of B0h and data value of 10h (main array READ, ECC enable).
Parameter Page Command

The following command flow must be issued by the memory controller to access the
parameter page contained within Micron SPI devices:
1. Issue a SET FEATURES (1Fh) command with a feature address of B0h and data
value of 40h (OTP enable, ECC disable).
2. Issue a PAGE READ (13h) command with a block/page address of 0x01h, and then
check the status of the read completion using the GET FEATURES (0Fh) command
with a feature address of C0h.
3. Issue a READ FROM CACHE (03h) command with an address of 0x00h to read the
data out of the NAND device (see the following Parameter Page Data Structure ta-
ble for a description of the contents of the parameter page.)
4. To exit reading the parameter page, issue a SET FEATURES (1Fh) command with a
feature address of B0h and data value of 10h (main array READ, ECC enable).
Parameter Page Data Structure
Table 6: Parameter Table
Byte Description Value (hex)

0-3 Parameter page signature 4Fh, 4Eh, 46h, 49h
4-5 Revision number 00h
6-7 Feature support 00h
8-9 Optional commands support 06h, 00h
10-31 Reserved 00h
32-43 Device manufacturer 4Dh, 49h, 43h, 52h, 4Fh, 4Eh, 20h, 20h, 20h, 20h, 20h, 20h
44-63 Device model: MT29F2G01AAAEDH4 4Dh, 54h, 32h, 39h, 46h, 31h, 47h, 30h, 31h, 41h, 41h, 41h, 44h,
44h, 48h, 34h, 20h, 20h, 20h, 20h
64 Manufacturer ID 2Ch
65-66 Date code 00h
67-79 Reserved 00h
80-83 Number of data bytes per page 00h, 08h, 00h, 00h
84-85 Number of spare bytes per page 40h, 00h
86-89 Number of data bytes per partial page 00h, 02h, 00h, 00h
90-91 Number of spare bytes per partial page 10h, 00h
92-95 Number of pages per block 40h, 00h, 00h, 00h
96-99 Number of blocks per unit 00h, 04h, 00h, 00h
100 Number of logical units 01h
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Table 6: Parameter Table (Continued)
Byte Description Value (hex)

101 Number of address cycles 00h
102 Number of bits per cell 01h
103-104 Bad blocks maximum per unit 14h, 00h
105-106 Block endurance 01h, 05h
107 Guaranteed valid blocks at beginning of 01h
target
108-109 Block endurance for guaranteed valid 00h
blocks
110 Number of programs per page 04h
111 Partial programming attributes 00h
112 Number of ECC bits N/A
113 Number of interleaved address bits 00h
114 Interleaved operation attributes 00h
115-127 Reserved 00h
128 I/O pin capacitance 0Ah
129-130 Timing mode support 00h
131-132 Program cache timing 00h
133-134 tPROG maximum page program time 58h, 02h
135-136 tERS maximum block erase time B8h, 0Bh
137-138 tR maximum page read time N/A
139-140 tCCS minimum 00h
164-165 Vendor-specific revision number 01h, 00h
166-179 Vendor specific 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 02h, 02h, B0h, 0Ah,
B0h
248 ECC maximum correct ability 00h
249 Die select feature 00h
250-253 Reserved 00h, 00h, 00h, 01h
254-255 Integrity CRC Set at test
256-512 2nd copy of the parameter table
513-768 3rd copy of the parameter table
769-2048 Additional redundant parameter pages
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Program Operations
PAGE PROGRAM
The PAGE PROGRAM operation sequence programs 1 byte to 2112 bytes of data within
a page. The page program sequence is as follows:
• 06h (WRITE ENABLE
• 02h (PROGRAM LOAD)
• 10h (PROGRAM EXECUTE)
• 0Fh (GET FEATURE command to read the status)
Prior to performing the PROGRAM LOAD operation, a WRITE ENABLE (06h) command
must be issued. As with any command that changes the memory contents, the WRITE
ENABLE must be executed in order to set the WEL bit. If this command is not issued,
then the rest of the program sequence is ignored. WRITE ENABLE must be followed by a
PROGRAM LOAD (02h) command. PROGRAM LOAD consists of an 8-bit Op code, fol-
lowed by 3 dummy bits, a plane select and a 12-bit column address, then the data bytes
to be programmed. The data bytes are loaded into a cache register that is 2112 bytes
long. Only four partial-page programs are allowed on a single page. If more than 2112
bytes are loaded, then those additional bytes are ignored by the cache register. The
command sequence ends when CS goes from LOW to HIGH. Figure 16 shows the PRO-
GRAM LOAD operation.
After the data is loaded, a PROGRAM EXECUTE (10h) command must be issued to ini-
tiate the transfer of data from the cache register to the main array. PROGRAM EXECUTE
consists of an 8-bit Op code, followed by a 24-bit address (8 dummy bits and a 16-bit
page/block address). After the page/block address is registered, the memory device
starts the transfer from the cache register to the main array, and is busy for tPROG time.
This operation is shown in Figure 17. During this busy time, the status register can be
polled to monitor the status of the operation (refer to the Status Register section). When
the operation completes successfully, the next series of data can be loaded with the
PROGRAM LOAD command.
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Figure 16: PROGRAM LOAD (02h) Timing

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (02h) 3 dummy bits 12-bit column address Data byte 1
SI 0 0 0 12 11 10 9 8 7 6 5 4 3 2 1 0 7 6
MSB
Plane select
1
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 16912… 16919
SCK
CS#
Data byte 1 Data byte 2 Data byte 2112
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Don’t Care
1
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Figure 17: PROGRAM EXECUTE (10h) Timing

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (10h) Address bits
SI 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6
SO High-Z
23 24 25 26 27 28 29 30 31 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
CS#
Address bits Get Feature (0Fh) Status register address (C0h)
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB
Plane select
SO High-Z
1 2
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
SCK
CS#
Status register address
SI 2 1 0
SO High-Z 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB
2 Don’t Care
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RANDOM DATA PROGRAM
The RANDOM DATA PROGRAM sequence programs or replaces data in a page with ex-
isting data. The random data program sequence is as follows:
• 84h (PROGRAM LOAD RANDOM DATA)
Prior to performing a PROGRAM LOAD RANDOM DATA operation, a WRITE ENABLE

(06h) command must be issued to change the contents of the memory array. Following
a WRITE ENABLE (06) command, a PROGRAM LOAD RANDOM DATA (84h) command
must be issued. This command consists of an 8-bit Op code, followed by 3 dummy bits,
a plane select bit, and a 12-bit column address. New data is loaded in the column ad-
dress provided with the 12 bits. If the random data is not sequential, then another PRO-
GRAM LOAD RANDOM DATA (84h) command must be issued with a new column ad-
dress. After the data is loaded, a PROGRAM EXECUTE (10h) command can be issued to
start the programming operation.
Figure 18: PROGRAM LOAD RANDOM DATA (84h) Timing

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (84h) 3 dummy bits 12-bit column address Data byte 1
SI 0 0 0 12 11 10 9 8 7 6 5 4 3 2 1 0 7 6
MSB
Plane select
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 16912… 16919
SCK
CS#
Data byte 1 Data byte 2 Data byte 2112
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Don’t Care
1
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Block Operations
INTERNAL DATA MOVE
The INTERNAL DATA MOVE command sequence programs or replaces data in a page
with existing data. The INTERNAL DATA MOVE command sequence is as follows:
• 13h (PAGE READ to cache)
• 84h (PROGRAM LOAD RANDOM DATA)
Prior to performing an internal data move operation, the target page content must be
read into the cache register. This is done by issuing a PAGE READ (13h) command (see
Figure 11). The PAGE READ command must be followed with a WRITE ENABLE (06h)
command in order to change the contents of memory array. After the WRITE ENABLE
command is issued, the PROGRAM LOAD RANDOM DATA (84h) command can be is-
sued. This command consists of an 8-bit Op code, followed by 3 dummy bits, a plane
select, and a 12-bit column address. New data is loaded in the 12-bit column address. If
the random data is not sequential, another PROGRAM LOAD RANDOM DATA (84h)
command must be issued with the new column address. After the data is loaded, a PRO-
GRAM EXECUTE (10h) command can be issued to start the programming operation.
INTERNAL DATA MOVE is not supported across internal planes.
Block Operations
BLOCK ERASE (D8h)
The BLOCK ERASE (D8h) command is used to erase at the block level. The blocks are
organized as 64 pages per block, 2112 bytes per page (2048 + 64 bytes). Each block is
132 Kbytes. The BLOCK ERASE command (D8h) operates on one block at a time. The
command sequence for the BLOCK ERASE operation is as follows:
• 06h (WRITE ENBALE command)
• D8h (BLOCK ERASE command)
• 0Fh (GET FEATURES command to read the status register)
Prior to performing the BLOCK ERASE operation, a WRITE ENABLE (06h) command
must be issued. As with any command that changes the memory contents, the WRITE
ENABLE command must be executed in order to set the WEL bit. If the WRITE ENABLE
command is not issued, then the rest of the erase sequence is ignored. A WRITE ENA-
BLE command must be followed by a BLOCK ERASE (D8h) command. This command
requires a 24-bit address consisting of 8 dummy bits followed by an 16-bit row address.
After the row address is registered, the control logic automatically controls timing and
erase-verify operations. The device is busy for tERS time during the BLOCK ERASE op-
eration. The GET FEATURES (0Fh) command can be used to monitor the status of the
operation (see the figure below).
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Block Operations
Figure 19: BLOCK ERASE (D8h) Timing

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
SCK
CS#
Command (D8h) Address bits
SI 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6
SO High-Z
23 24 25 26 27 28 29 30 31 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
CS#
Address bits GET FEATURES (0Fh) Status register address (C0h)
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB
Plane select
SO High-Z
1 2
12 13 14 15 16 17 18 19 20 21 22 23
SCK
CS#
SI 2 1 0
SO High-Z 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
MSB MSB
2 Don’t Care
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Block Operations
Block Lock Feature

The block lock feature provides the ability to protect the entire device, or ranges of
blocks, from the PROGRAM and ERASE operations. After power-up, the device is in the
“locked” state, i.e., bits 3, 4, and 5 of the block lock register are set to 1. To unlock all the
blocks, or a range of blocks, the SET FEATURES command must be issued with the A0h
feature address, including the data bits shown in Table 6. The operation for the SET
FEATURES command is shown in Figure 10 on page 15. When BRWD is set and WP is
LOW, none of the writable bits (3, 4, 5, and 7) in the block lock register can be set. Also,
when a PROGRAM/ERASE command is issued to a locked block, a status of 00h is re-
turned. When an ERASE command is issued to a locked block, the erase failure, 04h, is
returned. When a PROGRAM command is issued to a locked block, program failure,
08h, is returned.
Table 7: Block Lock Register Block Protect Bits
BP2 BP1 BP0 Protected Rows

0 0 0 None—all unlocked
0 0 1 Upper 1/64 locked
1 1 1 All locked (default)
For example, if all the blocks need to be unlocked after power-up, the following se-
quence should be performed:
• Issue SET FEATURES register write (1Fh)
• Issue the feature address to unlock the block (A0h)
• Issue 00h on data bits to unlock all blocks
One-Time Programmable (OTP) Feature

The serial device offers a protected, one-time programmable NAND Flash memory
area. Ten full pages (2112 bytes per page) are available on the device, and the entire
range is guaranteed to be good. Customers can use the OTP area any way they want;
typical uses include programming serial numbers, or other data, for permanent storage.
To access the OTP feature, the user must issue the SET FEATURES command, followed
by feature address B0h. When the OTP is ready for access, pages 02h–0Bh can be pro-
grammed in sequential order. The PROGRAM LOAD (02h) and PROGRAM EXECUTE
(10h) commands can be used to program the pages. Also, the PAGE READ (13h) com-
mand can be used to read the OTP area. The data bits used in feature address B0h to
enable OTP access are shown in the table below.
OTP Access
To access OTP, perform the following command sequence:
• Issue the SET FEATURES register write (1Fh)
• Issue the OTP feature address (B0h)
• Issue the PAGE PROGRAM or PAGE READ command
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Block Operations
It is important to note that after bits 6 and 7 of the OTP register are set by the user, the
OTP area becomes read-only and no further programming is supported. For OTP states,
see the following table.
Table 8: OTP States
OTP Protect Bit OTP Enable Bit State

0 0 Normal operation
0 1 Access OTP space
1 0 Not applicable
1 1 Use PROGRAM EXECUTE (10h) to lock OTP
Note: 1. The OTP space cannot be erased and after it has been protected, it cannot be program-
med again.
Status Register
The NAND Flash device has an 8-bit status register that software can read during the
device operation. The status register can be read by issuing the GET FEATURES (0Fh)
command, followed by the feature address C0h (see Figure 9 (page 16)).
The status register will output the status of the operation. The description of data bits
from status register are shown in the following table.
Table 9: Status Register Bit Descriptions
Bit Bit Name Description

P_Fail Program fail This bit indicates that a program failure has occurred (P_Fail set to 1). This bit will also be set if
the user attempts to program an invalid address or a locked or protected region, including the
OTP area.
This bit is cleared during the PROGRAM EXECUTE command sequence or a RESET command
(P_Fail = 0).
E_Fail Erase fail This bit indicates that an erase failure has occurred (E_Fail set to 1). This bit will also be set if
the user attempts to erase a locked region, or if the ERASE operation fails.
This bit is cleared (E_Fail = 0) at the start of the BLOCK ERASE command sequence or the RESET
command.
WEL Write enable This bit indicates the current status of the write enable latch (WEL) and must be set (WEL = 1),
latch prior to issuing a PROGRAM EXECUTE or BLOCK ERASE command. It is set by issuing the WRITE
ENABLE command.
WEL can also be disabled (WEL = 0), by issuing the WRITE DISABLE command.
OIP Operation in This bit is set (OIP = 1 ) when a PROGRAM EXECUTE, PAGE READ, BLOCK ERASE, or RESET com-
progress mand is executing; the device is busy. When the bit is 0, the interface is in the ready state.
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Block Operations
Table 9: Status Register Bit Descriptions (Continued)
Bit Bit Name Description

ECC_Status N/A ECC_Status provides ECC status as follows:
00b = No bit errors were detected during the previous read algorithm.
01b = A bit error was detected and corrected.
10b = Multiple bit errors were detected and not corrected.
11b = Reserved
ECC_Status is set to 00b either following a RESET, or at the beginning of the READ. It is then
updated after the device completes a valid READ operation.
ECC_Status is invalid if ECC is disabled (via a SET FEATURES command to the OTP feature ad-
dress).
After power-up RESET, ECC status is set to reflect the contents of block 0, page 0.
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Error Management
Error Management
This NAND Flash device is specified to have the minimum number of valid blocks (NVB)
of the total available blocks per die shown in the table below. This means the devices
may have blocks that are invalid when shipped from the factory. An invalid block is one
that contains at least one page that has more bad bits than can be corrected by the min-
imum required ECC. Additional bad blocks may develop with use. However, the total
number of available blocks will not fall below NVB during the endurance life of the prod-
uct.
Although NAND Flash memory devices may contain bad blocks, they can be used relia-
bly in systems that provide bad-block management and error-correction algorithms.
This ensures data integrity.
Internal circuitry isolates each block from other blocks, so the presence of a bad block
does not affect the operation of the rest of the NAND Flash array.
NAND Flash devices are shipped from the factory erased. The factory identifies invalid
blocks before shipping by attempting to program the bad-block mark into every loca-
tion in the first page of each invalid block. It may not be possible to program every loca-
tion in an invalid block with the bad-block mark. However, the first spare area location
in each bad block is guaranteed to contain the bad-block mark. This method is compli-
ant with ONFI factory defect mapping requirements. See the following table for the
bad-block mark.
System software should initially check the first spare area location for non-FFh data on
the first page of each block prior to performing any program or erase operations on the
NAND Flash device. A bad-block table can then be created, enabling system software to
map around these areas. Factory testing is performed under worst-case conditions. Be-
cause invalid blocks may be marginal, it may not be possible to recover the bad-block
marking if the block is erased.
Table 10: Error Management Details
Description Requirement
Minimum number of valid blocks (NVB) 1004
Total available blocks per die 1024
First spare area location Byte 2048
Bad-block mark 00h
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ECC Protection
ECC Protection
The serial device offers data corruption protection by offering 4-bit internal ECC.
READs and PROGRAMs with internal ECC can be enabled or disabled by setting the
ECC bit in the OTP register. ECC is enabled after device power up, so the default READ
and PROGRAM commands operate with internal ECC in the “active” state.
To enable/disable ECC, perform the following command sequence:
• Issue the SET FEATURES register write (1Fh).
• Issue the OTP feature address (B0h).
• Then:
– To enable ECC Set Bit 4, ECC Enable, to 1.
– To disable ECC Clear Bit 4, ECC Enable, to 0.
During a PROGRAM operation, the device calculates an ECC code on the 2k page in the
cache register, before the page is written to the NAND Flash array. The ECC code is stor-
ed in the spare area of the page.
During a READ operation, the page data is read from the array to the cache register,
where the ECC code is calculated and compared with the ECC code value read from the
array. If a 1- to 4-bit error is detected, the error is corrected in the cache register. Only
corrected data is output on the I/O bus. The ECC status bit indicates whether or not the
error correction was successful. The ECC Protection table below shows the ECC protec-
tion scheme used throughout a page.
With internal ECC, the user must accommodate the following:
• Spare area definitions provided in the ECC Protection table below.
• WRITEs to ECC are supported for main and spare areas 0, and 1. WRITEs to the ECC
area are prohibited (see the ECC Protection table below).
• When using partial-page programming, the following conditions must both be met:
– In the main user area and in user meta data area I, single partial-page program-
ming operations must be used (see the ECC Protection table below).
– Within a page, the user can perform a maximum of four partial-page programming
operations.
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ECC Protection
Table 11: ECC Protection
Max Byte Min Byte ECC

Address Address Protected Area Description
1FFh 000h Yes Main 0 User data 0
801h 800h No Reserved (bad block data)
803h 802h No User meta data II
807h 804h Yes Spare 0 User meta data I
80Fh 808h Yes Spare 0 ECC for main/spare 0
811h 810h No Reserved
Table 12: ECC Status
Bit 1 Bit 0 Description

0 0 No errors
0 1 1- to 4-bit error detected and corrected
1 0 Bit errors greater than four bits detected and not correc-
ted
1 1 Reserved
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Power-Up
Power-Up
SPI Power-Up
Micron NAND Flash devices are designed to prevent data corruption during power
transitions. V CC is internally monitored and when V CC reaches 2.5V, a minimum of
250µs must elapse before issuing a RESET (FFh) command. After issuing the RESET
command, 1ms must elapse before issuing any other command.
Figure 20: SPI Power-Up Timing

0 1 2 3 4 5 6 7
SCK
VCC = 2.5V
VCC
CS#
250µs Command (FFh) 1ms
SI
SO High-Z
Micron has developed an alternative SPI NAND sequence that does not require issuing
an explicit RESET (FFh) command upon power-up. When WP# is taken HIGH 250µs af-
ter V CC has reached 2.5V, the device automatically performs the RESET command. The
first access to the SPI NAND device can occur 1ms after WP# goes HIGH, and then CS#
can be driven LOW, SCK can start, and the required command can be issued to the SPI
NAND device.
Figure 21: Alternative SPI Power-Up Timing

Mode 3
SCK Mode 0
VCC = 2.5V MIN

VCC
WP#
CS#
250µs 1ms
Read from cache (03h or 0Bh)
SI
SO High-Z
Don’t Care
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Electrical Specifications
Stresses greater than those listed can cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not guar-
anteed. Exposure to absolute maximum rating conditions for extended periods can af-
fect reliability.
Table 13: Absolute Maximum Ratings
Parameter Symbol Min Max Unit

Supply voltage (SPI) VCC 2.7 3.6 V
Operating temperature (ambi- TA –40 85 °C
ent)
Junction temperature1 TJ – 110 °C
Storage temperature TS –40 125 °C
Note: 1. TJ is calculated based on TJ = Rth × P + TA with Rth = 180K/W.
Table 14: SPI Mode Electrical Characteristics
Parameter Symbol Min Typ Max Unit

Supply voltage (SPI) VCC 2.7 3 3.6 V
Supply current (READ/PROGRAM/ ICC – 12 20 mA
ERASE, MAX ROOT MEAN
SQUARE)
Standby ISB – 10 50 µA
Table 15: DC Characteristics
Parameter Symbol Min Max Unit Conditions

Input high voltage VIH 0.7 × VCC VCC + 0.3 V
Input low voltage VIL –0.3 0.2 × VCC V
Output high voltage VOH 0.7 × VCC VCC + 0.3 V IOH = –20μA
Output low voltage VOL – 0.15 × VCC V IOL = –1mA
Input leakage current ILI – ±10 µA
Output leakage current ILO – ±10 µA
Table 16: General Timing Characteristics (SPI)
Parameter Symbol Min Max Units

Clock frequency fC – 50 MHz
Hold# non-active hold time relative to SCK tCD 5 – ns
HOLD# holding time relative to SCK tCH 5 – ns
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Table 16: General Timing Characteristics (SPI) (Continued)
Parameter Symbol Min Max Units

Command deselect time tCS 100 – ns
Chip select# hold time tCSH 5 – ns
Chip select# setup time tCSS 5 – ns
Output disable time tDIS – 20 ns
Hold# non-active setup time relative to SCK tHC 5 – ns
Hold# setup time relative to SCK tHD 5 – ns
Data input hold time tHDDAT 5 – ns
Output hold time tHO 0 – ns
Hold to output High-Z tHZ – 15 ns
Hold# to output Low-Z tLZ – 15 ns
Rise/fall time tR, tF – 2 ns
Data input setup time tSUDAT 5 – ns
Clock LOW to output valid tV – 15 ns
Clock HIGH time tWH 8 – ns
Clock LOW time tWL 8 – ns
WP# hold time tWPH 100 – ns
WP# setup time tWPS 20 – ns
Table 17: PROGRAM/READ/ERASE Timing Characteristics (SPI)
Parameter Typ Max Description

NOP – 41 Number of partial-page programming operations supported.
tERS 700µs 3ms2 BLOCK ERASE operation time.
tPROG 220µs 600µs PROGRAM PAGE operation time (ECC enabled).
tRD 45µs 70µs Data transfer time from NAND Flash array to data register
with internal ECC enabled.
tRST (RD/PGM/ERS) – 5µs/10µs/500µs2 Resetting time for READ, PROGRAM, and ERASE operations.
Notes: 1. Four total partial-page programs to the same page. If ECC is enabled, the device is limi-
ted to one partial-page program per ECC user area, not exceeding four partial-page
programs per page.
2. 100,000 cycles.
3. For first RESET condition after power up, tRST will be 1ms maximum.
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Figure 22: WP# Timing
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
SCK
CS#
Command (1Fh) Address (A0h) Data byte
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2
MSB MSB
tWPS
WP#
17 18 19 20 21 22 23
SCK
CS#
Data byte
SI 6 5 4 3 2 1 0
tWPH
WP#
1 Don’t Care
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Figure 23: Serial Input Timing

tCSH
tCSS tCSH
tCFT tCSS
tCRT
SCK
tCS
CS#
tHDDAT
tSUDAT
SI MSB LSB
SO High-Z
Don’t Care
Figure 24: Serial Output Timing

tWL tWH
SCK
CS#
tHO tV tHO
tDIS
SO High-Z LSB OUT
Don’t Care
Figure 25: Hold# Timing
tCH tHD tHC
SCK
tCD
CS#
SI
tHZ
tLZ
SO
HOLD#
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Package Dimensions
Package Dimensions
Figure 26: 63-Ball VFBGA, Package Code H4
Seating
plane
0.65 ±0.05
A
0.12 A
63X Ø0.45
Solder ball material:
SAC305 (96.5% Sn,
3% Ag, 0.5% Cu).
Dimensions apply to Ball A1 ID
solder balls post- 10 9 8 7 6 5 4 3 2 1 Ball A1 ID
reflow on Ø0.4 SMD
ball pads.
A
B
C
D
E
F
8.8 CTR 11 ±0.1
G
H
J
K
L
0.8 TYP
M
0.8 TYP 1.0 MAX
7.2 CTR 0.25 MIN
9 ±0.1 Bottom side saw fiducials may or

may not be covered with soldermask.
Note: 1. All dimensions are in millimeters.
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Revision History
Revision History
Rev. L – 2/16
• Updated Array organization figure
• Updated Parameter Table
Rev. K – 7/14
• Added note to SPI Modes section: Multiple timing modes are not allowed during array
operations.
Rev. J – 10/13
• Specification changes: tERS, tPROG, and tRD
Rev. I – 04/13
• Revised from one plane to two planes
Rev. H – 03/13
• Revised from two plane to one plane
Rev. G – 10/12
• Updated part number chart with option X for product longevity program (PLP) under
Special Options
Rev. F – 11/11
• Changed command for op code 02h to PROGRAM LOAD, and changed command for
op code 84h to PROGRAM LOAD RANDOM DATA in the SPI NAND Command Set ta-
ble
Rev. E – 10/11
• Updated the ICC specification from 6mA TYP, 12mA MAX to 12mA TYP, 20mA MAX in
the SPI Mode Electrical Characteristics table
Rev. D – 05/11
• Corrected Byte 107 value from 00h to 01h in the Parameter Page Data Structure Table
Rev. C – 05/11
• Corrected standby current unit from mA to µA in the SPI Mode Electrical Characteris-
tics table
• Changed the ICC specification from 25 TYP, 35 MAX mA to 6 TYP, 12mA MAX in the SPI
Mode Electrical Characteristics table
Rev. B – 02/11
• Added Parameter Page Data Structure Table
PDF: 09005aef84011d85

Revision History
Rev. A – 07/10
• Initial release; Advance status
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000

www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
PDF: 09005aef84011d85

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1Gb x1: SPI NAND Flash Memory

NAND Flash Memory

Features Table 1: NAND Flash SPI Parameters

Options Internal ECC correction 4-bit

1Gb x1: SPI NAND Flash Memory

Part Numbering Information

Figure 1: Part Number Chart

Micron Technology Design Revision (shrink)

Level Operating Temperature Range

Classification Speed Grade

1Gb x1: SPI NAND Flash Memory

1Gb x1: SPI NAND Flash Memory

Rev. C – 05/11 ............................................................................................................................................. 43

1Gb x1: SPI NAND Flash Memory

1Gb x1: SPI NAND Flash Memory

1Gb x1: SPI NAND Flash Memory

1Gb x1: SPI NAND Flash Memory

Figure 2: Functional Block Diagram

Serial NAND controller

Cache and NAND

ECC and status

1Gb x1: SPI NAND Flash Memory

Ball Assignments and Descriptions

Figure 3: 63-Ball VFBGA (SPI only) Ball Assignments

A DNU DNU DNU DNU

B DNU DNU DNU

C DNU DNU DNU DNU DNU DNU

D VCC DNU DNU DNU DNU DNU

E DNU DNU DNU DNU DNU DNU

F DNU DNU DNU DNU DNU DNU

G DNU DNU HOLD#/ VCC SO/ DNU

H DNU DNU DNU DNU DNU DNU

J DNU DNU DNU DNU SI/ WP#/

K VSS DNU DNU SCK CS# VSS

L DNU DNU DNU DNU

M DNU DNU DNU DNU

Top View, Ball Down

1Gb x1: SPI NAND Flash Memory

Table 2: SPI Ball Descriptions

Symbol Type Description

HOLD# must not be driven by the host during x4 read operations.

SI must not be driven by the host during x2 or x4 read operations.

WP# must not be driven by the host during x4 read operations.

1Gb x1: SPI NAND Flash Memory

Figure 4: Memory Map

Figure 5: Array Organization

Data Register 2048 64

1 page = (2K + 64) bytes

1 block = (2K + 64) bytes x 64 pages

1024 blocks 1 block

1Gb x1: SPI NAND Flash Memory

All timing diagrams shown in this data sheet are mode 0.

Figure 6: SPI Modes Timing

1Gb x1: SPI NAND Flash Memory

1Gb x1: SPI NAND Flash Memory

SPI NAND Command Definitions

Table 3: SPI NAND Command Set

Address Dummy Data