Tutorial 2 Ans PDF

ADVANCED MOSFET MODELING
Tutorial No: 2
1. In an uniformly doped silicon sample, the electron and hole components of current are
equal in an applied electric field. Calculate the equilibrium electron and hole
concentrations, the net doping and the sample resistivity at 300K.
µp µ
Ans: Jn = Jp (drift currents) nq µ nξ = pq µ p ξ ⇒ n = p; p= n n
µn µp
µp µn
also np = ni2 ⇒ ie n = ni ; p = ni At equilibrium ,
µn µp
ni 1.5 × 1010
∴ no = = = 8.66 × 109 / cm3 µn = 1350 cm2 / V.sec
3 3
po = 3 ni = 3 × 1010 = 2.59 × 1010 / cm 3 µp = 450 cm2/V.sec

Net doping = P0- n0 = 2.59 x 1010 – 8.66 x 109 = 1.72 x 1010 / cm3
1 1
Resistively = =
σ q (nrn + pµ p )
1
1.6 × 10 − 19
( 8.66 × 10 × 13.50 + 2.59 × 1010 × 450 )
9 = 2.68 x 105 Ω cm
2. An intrinsic sample of Ge has a resistivity of 60 Ohms.cm. Calculate the value of

current density in an applied field of 10mV/cm if 1013 donors/cm3 and 4x1012 acceptors are
introduced. Take µn = 4200 cm2/V.sec and µp = 2000 cm2/V.sec. Assume that all impurities
are ionised.
1 1 1
Ans. Intrinsic resistivity ρi = = =
σi ni q µ n + pi q µ p ni q ( µ n + µ p )
1 1
∴ ni = ρ i q(µ n + µ p ) = 60 × 1.6 × 10 − 9 (4200 + 2000)
for Ge, ni = 1.68 x 1013 / cm3

net doping = n – p = ND - NA = 1013 – 4 x 1012
n–p = 6 x 1012 / cm3 (1)
but (n – p)2 = n2 + p2 – 2 np = n2 + p2 – 2ni2
(n + p)2 = n2 + p2 + 2np = n2 + p2 + 2ni2
∴ (n + p)2 = (n - p)2 + 4ni2
∴n+p = ( n − p) 2 + 4ni 2 = (6 × 1012 ) 2 + 4 (1.68 × 1013 ) 2
n+p = 3.41 x 1013 / cm3 (2)

∴ (1) & (2) ⇒ n = 2 x 1013 / cm3 & P = 1.4 x 1013 /cm3
J = (nqµn + pqµp) ξ =q ξ (nµn + pµp)
= 1.6 x 10-19 x 10 x 10-3 (2 x 1013 x 4200 + 1.4 x 1013 x 2000) =1.792 x 10-4 A / cm2
3. A sample of intrinsic semiconductor has a resistance of 10 Ohms at 364 K and 100 Ohms
at 333 K. Assuming that mobilities are almost constant at this temperature range, calculate
the band gap of the semiconductor.
 − Eg 
α T
3
Ans. Intrinsic concentration ni 2

exp  
 2 KT 
1 RA
and ρ int ri = =
ni q ( µ n + µ p ) l
R - resistance ,A - area ,l - length
3  − Eg 
T1 2 exp  
R ni1  2 KT1 
∴ 2 = = at T = T1 = 333K, R1 = 100 Ω
R1 ni2 3  − Eg 
T2 2 exp  
 2 KT2 
T = T2 = 364K, R2 = 10Ω
 − Eg  1 1 
3
1  333  2
∴ =   exp   − 
10  364   2 K  T1 T2  
 − Eg  T    333  
3 3
 364  2
1 T − Eg  300 300   Eg 
2
  × = exp   −   = exp  −  ∴  = ln  10 ×   
 333  10  2 KT  T1 T2  .052  333 364   .675    364  
Eg = .675 x 2.169 = 1.46eV

4. The resistivity of a silicon sample (ρo) is measured at 300 K. the sample is then remelted
and doped with an additional 5x1016 arsenic atoms/cm3. A new crystal is grown that has a
resistivity of 0.1 Ohm.cm and is n-type. Determine the type and concentration of dopant in
the original sample and value of ρo.
1 1 1
Ans. New crystal in n type ∴ ρi = ∴ n= = = 4.63 x 1016 / cm3
nq µ n ρ i q µ n .1× 1.6 × 10 − 19 × 1350
p = ni2/n
2.25 × 1020
net doping n-p = N D+ − N A− p= = 4860
4.63 × 1016
ni 2
∴ N A = N D+ − n +
n
= N D+ − n = (5 – 4.63) 1016
Concentration of dopants originally, NA = 3.7 x 1015 / cm3

∴Originally crystal was p type assuming all NA are ionized.
1 1
P = NA & ρo = =
P0 q µ p 3.7 × 1015 × 1.6 × 10 − 19 × 450
Original resistivity = 3.75Ωcm

5. A p-type silicon sample with a resistivity of 100 Ohms.cm at 300K is uniformly
illuminated with light that generates 1016 excess electron hole pairs (EHP) per cm3 per sec.
In the steady state, calculate the change in resistivity of the sample caused by the light. If
the light is switched off at t = 0, calculate the time required for the excess conductivity to
drop to 10% of its value at t = 0. Assume τn = 10-6 sec
1
Ans. A p-type sample, ρi = 100Ω cm
ρ p0 q µ p
1
∴ p p0 = = 1.39 × 1014 / cm 3
100 × 1.6 × 10 − 19 × 450
ni 2 2.25 × 1020
n p0 = = = 1.6 × 106 / cm 3
p p0 1.39 × 1014
p1p = n1p = GL Cn = 1010 / cm3
pp = Pp1 + Pp0 = 1.39 × 1014 / cm 3
1 1
∴ ρ = = = 99.9Ωcm
nq µ n + pqµ p 1.6 × 10 − 19
( 1.39 × 10 14
× 450 + 1010 × 1 350 )
Excess conductivity σ α P1p and n1p.

∴when excess σ drops to 10% of its initial value excess concentration (carriers) np1 or Pp1 also
drops to 10%.
n1p 10 n 
∴ = = .1 But n1p = n p exp  − t  ∴ t = τ n ln  1p  = τ n ln 10 = 2.3 × 10 − 6 sec
np 100  τn n 
 p
6. A silicon sample is doped with 1015 donors /cm3. Calculate the excess electron and hole
concentration required, to increase the sample conductivity by 15%. What carrier
generation rate is required to maintain these concentrations? Assume τp = 10-6 sec and T
=300 K.
2.25 × 1020
Ans. nn = 1015 / cm 3 , Pn =
1015
= 2.25 × 105 / cm 3
σ = nn q µ n = 1015 x 1.6 x 10-19 x 1350 = 0.216Ω/ cm
when σ in increased by 15%, σnew = σ + ∆σ = σ + .15 σ
σnew = 1.15σ = nn q µn + pn q µp (nn = nn + nn1 Pn = pn + pn1 = pn1 ) n1n = p1n
∴ excess conductivity
.15σ .15 × 216
σ1 = .15σ = p1nq (µn + µp) ∴ p1n = = =
q( µ n + µ p ) 1.6 × 10− 19 × (1350 + 450)
1.125 x 1014 / cm3
p1n 1.125 × 1014

GL = = = 1.125 ×
1020 / cm3 / sec

τp 10− 6
[Note: Use ni = 1.5x1010 cm-3, µn = 1350 cm2/V.s and µp = 450 cm2/V.s for silicon at 300 K]

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ADVANCED MOSFET MODELING

po = 3 ni = 3 × 1010 = 2.59 × 1010 / cm 3 µp = 450 cm2/V.sec

2. An intrinsic sample of Ge has a resistivity of 60 Ohms.cm. Calculate the value of

for Ge, ni = 1.68 x 1013 / cm3

∴n+p = ( n − p) 2 + 4ni 2 = (6 × 1012 ) 2 + 4 (1.68 × 1013 ) 2

n+p = 3.41 x 1013 / cm3 (2)

Ans. Intrinsic concentration ni 2

R - resistance ,A - area ,l - length

Eg = .675 x 2.169 = 1.46eV

Concentration of dopants originally, NA = 3.7 x 1015 / cm3

Original resistivity = 3.75Ωcm

p1p = n1p = GL Cn = 1010 / cm3

pp = Pp1 + Pp0 = 1.39 × 1014 / cm 3

Excess conductivity σ α P1p and n1p.

σ = nn q µ n = 1015 x 1.6 x 10-19 x 1350 = 0.216Ω/ cm

when σ in increased by 15%, σnew = σ + ∆σ = σ + .15 σ

σnew = 1.15σ = nn q µn + pn q µp (nn = nn + nn1 Pn = pn + pn1 = pn1 ) n1n = p1n

1.125 x 1014 / cm3

p1n 1.125 × 1014

1020 / cm3 / sec

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