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MBRA130LT3G, NRVBA130LT3G Surface Mount Schottky Power Rectifier

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MBRA130LT3G,

NRVBA130LT3G

Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
www.onsemi.com
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low SCHOTTKY BARRIER
voltage, high frequency switching power supplies; free wheeling RECTIFIER
diodes and polarity protection diodes. 1.0 AMPERES, 30 VOLTS
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Low Forward Voltage Drop SMA
CASE 403D
• NRVBA Prefix for Automotive and Other Applications Requiring PLASTIC
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS MARKING DIAGRAM
Compliant

Mechanical Characteristics: B1L3


AYWWG
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 70 mg (approximately) B1L3 = Specific Device Code
• Finish: All External Surfaces Corrosion Resistant and Terminal A = Assembly Location***
Y = Year
Leads are Readily Solderable WW = Work Week
• Lead and Mounting Surface Temperature for Soldering Purposes: G = Pb−Free Package
260°C Max. for 10 Seconds (Note: Microdot may be in either location)
• Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or ***The Assembly Location code (A) is front side
Polarity Band optional. In cases where the Assembly Location is
• Device Meets MSL1 Requirements stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
• ESD Ratings:
♦ Machine Model = C (> 400 V)
ORDERING INFORMATION
♦ Human Body Model = 3B (> 8000 V)
Device Package Shipping†
MBRA130LT3G SMA 5,000 /
(Pb−Free) Tape & Reel **
NRVBA130LT3G* SMA 5,000 /
(Pb−Free) Tape & Reel **

** 12 mm Tape, 13” Reel


†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:


April, 2017 − Rev. 9 MBRA130LT3/D
MBRA130LT3G, NRVBA130LT3G

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 30 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IO A
(At Rated VR, TC = 105°C) 1.0
Peak Repetitive Forward Current IFRM A
(At Rated VR, Square Wave, 100 kHz, TC = 105°C) 2.0
Non−Repetitive Peak Surge Current IFSM A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 25
Storage Temperature Tstg −55 to +150 °C
Operating Junction Temperature TJ −55 to +125 °C
Voltage Rate of Change, (Rated VR, TJ = 25°C) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit

Thermal Resistance — Junction−to−Lead (Note 1) RqJL 35 °C/W


Thermal Resistance — Junction−to−Ambient (Note 1) RqJA 86
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 2) VF TJ = 25°C TJ = 100°C Volts

(IF = 1.0 A) see Figure 2 0.41 0.35


(IF = 2.0 A) 0.47 0.43

Maximum Instantaneous Reverse Current IR TJ = 25°C TJ = 100°C mA

(VR = 30 V) see Figure 4 1.0 25


(VR = 15 V) 0.4 12

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.

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MBRA130LT3G, NRVBA130LT3G

i F , INSTANTANEOUS FORWARD CURRENT (AMPS)

I F, INSTANTANEOUS FORWARD CURRENT (AMPS)


10 10

TJ = 125°C TJ = 125°C
1.0 1.0
TJ = 85°C

TJ = 25°C TJ = 85°C

TJ = -40°C TJ = 25°C
0.1 0.1
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

100E-3 100E-3

I R , MAXIMUM REVERSE CURRENT (AMPS)


I R , REVERSE CURRENT (AMPS)

10E-3 10E-3
TJ = 125°C
1.0E-3 1.0E-3
TJ = 85°C
TJ = 85°C

100E-6 100E-6 TJ = 25°C

10E-6 10E-6
TJ = 25°C

1.0E-6 1.0E-6
0 10 20 30 0 10 20 30
VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

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MBRA130LT3G, NRVBA130LT3G

2.0 0.6

PFO , AVERAGE POWER DISSIPATION (WATTS)


IO , AVERAGE FORWARD CURRENT (AMPS)
FREQ = 20 kHz SQUARE WAVE dc
1.8
dc 0.5
1.6 Ipk/Io = p
1.4
0.4 Ipk/Io = 5
1.2 SQUARE WAVE
Ipk/Io = 10
1.0 0.3
Ipk/Io = p
0.8 Ipk/Io = 20
Ipk/Io = 5
0.2
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20 0.1
0.2
0 0
0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating Figure 6. Forward Power Dissipation

T, TIME (s)
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0E+0

100E-3

10E-3

1.0E-3

100E-6
10E-6 100E-6 1.0E-3 10E-3 100E-3 1.0E+0 10E+0 100E+0 1.0E+3
T, TIME (s)

Figure 7. Thermal Response

1000

TJ = 25°C
C, CAPACITANCE (pF)

100

10

1.0
0 5.0 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitance

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MBRA130LT3G, NRVBA130LT3G

PACKAGE DIMENSIONS

SMA
CASE 403D
ISSUE H

HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
E 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.

MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
b D A 1.97 2.10 2.20 0.078 0.083 0.087
A1 0.05 0.10 0.20 0.002 0.004 0.008
b 1.27 1.45 1.63 0.050 0.057 0.064
c 0.15 0.28 0.41 0.006 0.011 0.016
D 2.29 2.60 2.92 0.090 0.103 0.115
POLARITY INDICATOR
OPTIONAL AS NEEDED E 4.06 4.32 4.57 0.160 0.170 0.180
(SEE STYLES) HE 4.83 5.21 5.59 0.190 0.205 0.220
L 0.76 1.14 1.52 0.030 0.045 0.060

A1
L c
SOLDERING FOOTPRINT*

4.000
0.157

2.000
0.079

2.000
0.079

SCALE 8:1 ǒinches


mm Ǔ

*For additional information on our Pb−Free strategy and soldering


details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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