ARTICLE IN PRESS

Journal of Physics and Chemistry of Solids 69 (2008) 1996–2003

www.elsevier.com/locate/jpcs

Effect of bismuth deficiency on structure and electrical properties

of (Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics
Qing Xua,, Yu-Heng Huanga, Min Chena,b, Wen Chena, Bok-Hee Kimb, Byung-Kuk Ahnb
a
School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, People’s Republic of China
b
Faculty of Advanced Materials Engineering, Chonbuk National University, Chonju 561756, Republic of Korea
Received 1 August 2007; received in revised form 13 January 2008; accepted 15 February 2008

Abstract

(Na0.5Bix)0.93Ba0.07TiO3 (x ¼ 0.500–0.492) ceramics were prepared by a citrate method, and the structure and electrical properties of
the ceramics were investigated with respect to the amount of Bi deficiency. It was detected that the Bi deficiency had a considerable
impact on the crystal structure and microstructure. The inspection of both the temperature dependence of the dielectric properties (free
permittivity eT33/e0 and dielectric loss tan d) and the evolution of the polarization–electrical field (P–E) hysteresis loops with measuring
temperature suggests that the Bi deficiency served to increase the depolarization temperature (Td). The Bi deficiency led to an increase in
the coercive field (Ec) and mechanical quality factor (Qm) together with a decrease in the remanent polarization (Pr) and piezoelectric
constants (d33). The variation of the structure and electrical properties with Bi deficiency amount was qualitatively interpreted in terms of
the formation of Bi and oxygen vacancies in the Bi-deficient specimens. This research indicates the importance of adequately controlling
Bi stoichiometry of (Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics in obtaining the desired ferroelectric and piezoelectric properties.
r 2008 Elsevier Ltd. All rights reserved.

Keywords: A. Ceramics; B. Chemical synthesis; D. Electrical properties; D. Ferroelectricity; D. Piezoelectricity

1. Introduction considerable attention on account of the existence of a

rhombohedral–tetragonal morphotropic phase boundary
In the past decades, there has been a continuous research (MPB) near x=0.06. Compared with pure NBT, the
effort towards lead-free piezoelectric materials as potential NBT–BT compositions near the MPB offer obviously
alternatives to the widely used lead zirconate titanate reduced coercive fields and appreciably improved piezo-
(PZT)-based piezoelectric ceramics. Sodium bismuth tita- electric properties [2,8].
nate, (Na0.5Bi0.5)TiO3 (NBT), is a perovskite-type (ABO3) Among the constituents of PZT-based ceramics, Pb2+
ferroelectric with a relatively large remanent polarization plays an exceptionally important role on the ferroelectric
(Pr ¼ 38 mC/cm2) at room temperature and a relatively and piezoelectric properties, related to the onset of
high Curie temperature (Tc ¼ 320 1C) [1]. Due to its strong hybridization between Pb-6p and O-2p orbitals and large
ferroelectricity at room temperature, NBT has been displacement of Pb2+ in response to strain [9]. Bi3+ has an
considered to be a promising candidate material for lead- identical valence shell electron configuration (6s26p0) to
free piezoelectric ceramics. However, pure NBT suffers that of Pb2+. It has been considered that the ferroelec-
from its high coercive field (Ec ¼ 73 kV/cm), making it tricity of NBT system materials is attributable to
difficult in obtaining the desired piezoelectric properties. (Na0.5Bi0.5)2+ complex ions, especially Bi3+ ions, at the
To solve this problem, varieties of NBT-based solid A site of the perovskite structure [10,11]. Research results
solutions have been developed [2–7]. Among them, on NBT crystals revealed that the volatilization of Bi
(Na0.5Bi0.5)1xBaxTiO3 (NBT–BT) system has attracted during crystal growth caused a deviation in chemical
stoichiometry, which consequently affected the structure
Corresponding author. Tel.: +86 27 87863277; fax: +86 27 87864580. and physical properties of the crystals [12,13]. Considering
E-mail address: xuqing@whut.edu.cn (Q. Xu). the volatility of Bi at high temperatures, it is of great

0022-3697/$ - see front matter r 2008 Elsevier Ltd. All rights reserved.
doi:10.1016/j.jpcs.2008.02.009
 ARTICLE IN PRESS
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importance to examine the influence of Bi deficiency on the mens by a TH2818 automatic component analyzer
structure and electrical properties of NBT system ceramics. (0.02–300 kHz) with a programmable furnace at 10 kHz
There have been several previous researches concerning upon heating with a heating rate of 1 1C/min. The
nonstoichiometry issue of NBT system ceramics, involving piezoelectric constant (d33) was measured using a quasi-
the role of (Na0.5Bi0.5)2+ nonstoichiometry, Bi3+ excess static d33 meter based on the Berlincourt method at 110 Hz.
and Ti4+ nonstoichiometry on the electrical properties, The electromechanical coupling factor (kp) and mechanical
respectively [8,14,15]. However, the effect of Bi deficiency quality factor (Qm) were measured by the resonance–anti-
on the structure and electrical properties of NBT–BT resonance method using a HP4294 impedance analyzer.
ceramics with compositions near the MPB has not been The polarization–electrical field (P–E) hysteresis loop was
given sufficient consideration. This thus warrants further measured at varied temperatures by a radiant precision
research on the topic from the viewpoint of providing a workstation based on a standard Sawyer–Tower circuit at
guideline to adequately controlling the composition and 50 Hz.
preparation process of the ceramics.
In this work, (Na0.5Bi0.5)0.93Ba0.07TiO3 was selected as a 3. Results and discussion
representative of MPB compositions in the NBT–BT
system. In continuation of our earlier research regarding Fig. 1 shows the X-ray diffraction (XRD) patterns of the
the syntheses of the NBT–BT system by a citrate method calcined powders. A perovskite phase was certified for
[16], (Na0.5Bix)0.93Ba0.07TiO3 (x ¼ 0.500–0.492) ceramics the powders and no secondary phase can be found within
were prepared by the method. Moreover, the structure and the sensitivity of XRD. Fig. 2 shows typical morphology
electrical properties of the ceramics were investigated with of the calcined powders. One can observe fine and uniform
regard to the amount of Bi deficiency. particles around 100 nm.
XRD analysis identified a pure perovskite structure for
2. Experimental the ceramic specimens. Fig. 3 shows the XRD patterns of
the ceramic specimens in the 2y ranges of 38–421 and
The powders with the nominal composition of 45–481, respectively. A rhombohedral (0 0 3)/(0 2 1) peak
(Na0.5Bix)0.93Ba0.07TiO3 (x ¼ 0.500–0.492) were synthe- splitting and a tetragonal (0 0 2)/(2 0 0) peak splitting were
sized by a citrate method. Reagent-grade NaNO3, detected for the specimen with x ¼ 0.500. It characterizes a
Bi(NO3)3  5H2O, Ba(NO3)2, tetrabutyl titanate and citric coexistence of rhombohedral and tetragonal phases, which
acid were used as starting materials. Tetrabutyl titanate is consistent with the nature of the specimen with a MPB
was first dissolved into a citric acid solution and various composition [2,8]. In the 2y range of 38–421 (Fig. 3a), the
nitrates were then added, followed by stirring to yield a rhombohedral splitting keeps evident until x ¼ 0.496 and
transparent aqueous solution. The mole ratio of citric acid then the two peaks tend to combine into a single peak with
to the total metal cation content was 1.25. The precursor further increasing the Bi deficiency amount. A basically
solution was heated to form a sol and subsequently a gel. symmetrical single peak appears at x ¼ 0.492, assignable to
The resulting gel was pulverized and calcined at 600 1C for tetragonal (1 1 1) peak. In the 2y range of 45–481 (Fig. 3b),
1 h in air. The details of the synthesis process have been one can see a distinct tetragonal (0 0 2)/(2 0 0) peak splitting
described elsewhere [16]. The calcined powders were when xX0.496 and an obscure tetragonal (0 0 2)/(2 0 0)
uniaxially pressed under a pressure of 300 MPa into discs splitting is still distinguishable at higher Bi deficiency
of 19 mm diameter and 1 mm thickness. The discs were
embedded into pre-prepared powder with similar composi-
tion in a sealed crucible and sintered at 1150 1C for 2 h
in air.
The phase purity of calcined powders and crystal
structure of ceramic specimens were examined by a Philips
X’pert PBO X-ray diffractometer using Cu Ka radiation.
The morphology of calcined powders was observed at a
Hitachi S-4700 field emission scanning electron microscope
(FESEM). The microstructure of ceramic specimens was
investigated by a Jeol JSM-5610LV scanning electron
microscope (SEM) using polished and thermally etched
surfaces. The ceramic specimens were polished to ensure
surface flatness and painted with silver paste on both
surfaces as electrodes for measuring electrical properties.
The specimens were poled in a silicon oil bath at 60 1C
under 3.0 kV/mm for 15 min. The temperature dependence
of dielectric properties (free permittivity eT33/e0 and
dielectric loss tan d) was measured using the poled speci- Fig. 1. XRD patterns of calcined powders.
 ARTICLE IN PRESS
1998 Q. Xu et al. / Journal of Physics and Chemistry of Solids 69 (2008) 1996–2003

Fig. 2. FESEM micrographs of the calcined powders with (a) x ¼ 0.500 and (b) x ¼ 0.495.

Fig. 3. XRD patterns of ceramic specimens in the 2y ranges of (a) 38–421 and (b) 45–481.
 ARTICLE IN PRESS
Q. Xu et al. / Journal of Physics and Chemistry of Solids 69 (2008) 1996–2003 1999

Fig. 4. SEM micrographs of the ceramic specimens with (a) x ¼ 0.500, (b) x ¼ 0.496, (c) x ¼ 0.495 and (d) x ¼ 0.492.

amounts. Additionally, it can be noticed that the XRD Fig. 4 shows SEM micrographs of the ceramic specimens
peaks progressively shift to higher diffraction angle with various amounts of Bi deficiency. There is a change in
directions with increasing Bi deficiency amount. These the grain size and shape with Bi deficiency amount.
changes indicate an influence of the Bi deficiency on the Compared with the specimen with x ¼ 0.500, the Bi-
crystal structure, which can be tentatively explained with deficient specimens have relatively larger gains. It can be
respect to the defects in the specimens. It is plausible that attributed to the formation of oxygen vacancies in these
the Bi deficiency design in the present work caused Bi specimens. It is commonly recognized that oxygen vacan-
vacancies at the A site of the perovskite structure. For cies are beneficial to the mass transport of oxide systems at
charge compensation purposes, oxygen vacancies were high temperatures and thus promote grain growth during
created to maintain an overall electrical neutrality. The sintering. Moreover, the specimens with relatively low Bi
presence of these vacancies resulted in a lattice distortion deficiency amounts presented pebble-like grains (Fig. 4a
and unit cell shrinkage. It is rational to deduce that the and b), while the grain shape turned to be more rectangular
lattice distortion and unit cell shrinkage would become with higher Bi deficiency amounts, which is especially
pronounced with increasing Bi deficiency amount. The evident when x ¼ 0.492 (Fig. 4d). The evolution in the
XRD peak shift to higher diffraction angle directions grain shape with Bi deficiency amount corresponds well
agrees well with a decrease in the dimension of the with that in the symmetry of the crystal structure.
unit cells. From the viewpoint of crystal chemistry, the Fig. 5 shows the temperature dependence of the di-
increase in the magnitude of the lattice distortion allowed electric properties of the ceramic specimens with various
a change in the symmetry of the unit cells. This is amounts of Bi deficiency. For the specimen with x ¼ 0.500
presumably responsible for the variation tendency in the (Fig. 5a), one can observe an obvious dispersion of the free
crystal structure from a rhombohedral–tetragonal phase permittivity (eT33/e0) with increasing measuring temperature.
coexistence to a tetragonal symmetry with increasing Bi There are two permittivity anomalies within the measuring
deficiency amount. temperature range, a weak hump and a broad permittivity
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2000 Q. Xu et al. / Journal of Physics and Chemistry of Solids 69 (2008) 1996–2003

Fig. 5. Temperature dependence of the free permittivity (eT33/e0) and dielectric loss (tan d) of ceramic specimens with various amounts of Bi deficiency.

peak. Moreover, one can find a dielectric loss (tan d) peak, the coexistence of complex ions (Na+, Bi3+ and Ba2+),
corresponding to the weak hump of the permittivity. This which possess similar radii but different charges and
behavior is rather analogous to those previously observed electron configurations, at an equivalent crystallographic
in NBT–BT ceramics with MPB compositions, with the site.
two permittivity anomalies being referable to a ferroelec- The Bi-deficient specimens showed a rather similar
tric–antiferroelectric transition and a subsequent transition variation of the dielectric properties with measuring
to paraelectric state, respectively [2,17]. The dashed lines in temperature (Fig. 5b–d). Compared with the specimen
Fig. 5a indicate two characteristic temperatures. The with x ¼ 0.500, the Bi-deficient specimens offered obscurer
temperature corresponding to the ferroelectric–antiferro- low-temperature permittivity humps coupled with more
electric transition is termed as depolarization temperature dispersive permittivity peaks. This is ascribable to the
(Td), as the specimen is basically depolarized and loses formation of Bi and oxygen vacancies in the Bi-deficient
piezoelectric activity over the temperature [18]. The value specimens, increasing local compositional inhomogeneity
of the depolarization temperature can be determined and therefore leading to a more diffusive dielectric
according to the dielectric loss peak [19]. The specimen response. In addition, one can find that the Bi deficiency
shows a depolarization temperature around 85 1C, which is resulted in an increase in the depolarization temperature
relatively lower compared with that of (Na0.5Bi0.5)0.94 and maximum temperature relative to those of the speci-
Ba0.06TiO3 (100 1C) determined by a thermally stimulated men with x ¼ 0.500. The increase of the depolarization
depolarization current measurement [8]. The temperature temperature in the Bi-deficient specimens was further
where the peak value of the permittivity occurs is named as confirmed by the inspection of the P–E hysteresis loops
maximum temperature (Tmax). The diffuse phase transition of the specimens at varied temperatures, which will be
behavior of the specimen is in agreement with the nature of provided in the following part.
the NBT–BT system as a relaxor ferroelectric. The At room temperature, saturated P–E hysteresis loops
mechanism of diffuse phase transition in complex per- were observed over the entire investigated composition
ovskite-type relaxor ferroelectrics has been elucidated from range. The values of the remanent polarization (Pr) and
different viewpoints [20,21]. In the present work, it is coercive field (Ec) were determined from measured loops,
considered that this behavior should be closely related to as shown in Fig. 6. The coercive field displayed an
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Q. Xu et al. / Journal of Physics and Chemistry of Solids 69 (2008) 1996–2003 2001

enhancement with increasing Bi deficiency amount, while increase of the coercive field. On the other hand, as well
the remanent polarization, generally, presented an inverse established, the spontaneous polarization in a perovskite-
trend. This occurrence can be qualitatively interpreted with type ferroelectric mainly originates from the displacement
regard to the formation of Bi and oxygen vacancies in the of the B site cations within the [BO6] octahedra [8,10]. For
Bi-deficient specimens. As well known, oxygen vacancies in the Bi-deficient specimens, the decrease of the unit cell
perovskite-type ferroelectrics have a clamping effect on the dimensions caused by the generation of Bi and oxygen
motion of domain walls [22]. The clamping effect restrains vacancies is unfavorable to such displacement and thus
the reversal of the spontaneous polarization of ferroelectric acted as a detrimental factor to the spontaneous polariza-
domains under applied electrical field, resulting in an tion. This is assumed to be the cause for the reduction of
the remanent polarization with increasing Bi deficiency
amount.
The P–E hysteresis loops of the specimens were also
examined at elevated temperatures. Fig. 7 shows the P–E
hysteresis loops at varied temperatures for the ceramic
specimens with various amounts of Bi deficiency. The P–E
hysteresis loops of the specimens displayed a similar
evolution, becoming narrower with elevating measuring
temperature. For the specimen with x ¼ 0.500, the loop
measured at 80 1C kept a typical ferroelectric feature and
further elevating the temperature to 120 1C yielded a
double-like loop, reflecting the appearance of an antiferro-
electric state. The result is generally in accordance with the
depolarization temperature of the specimen around 85 1C,
as indicated by the dashed line in Fig. 5a. It was noticed
that the double-like hysteresis loop still reserved a small
Fig. 6. Remanent polarization Pr and coercive field Ec at room degree of remanent polarization. This can be ascribed to a
temperature for ceramic specimens as a function of Bi content. coexistence of ferroelectric and antiferroelectric states in

Fig. 7. P–E hysteresis loops at varied temperatures for ceramic specimens with various amounts of Bi deficiency.
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2002 Q. Xu et al. / Journal of Physics and Chemistry of Solids 69 (2008) 1996–2003

the specimen at the temperature [23]. For the Bi-deficient

specimens, no double-like hysteresis loop occurred over the
whole measuring temperature range except a very slight
deformation of the loop measured at 120 1C when
x ¼ 0.498. Then, it can be suggested that the Bi deficiency
served to increase the depolarization temperature of
(Na0.5Bi0.5)0.93Ba0.07TiO3. This result roughly coincides
with that obtained from the investigation of the tempera-
ture dependence of the dielectric properties in Fig. 5.
The depolarization temperature can be visualized as an
indication of the temperature stability of ferroelectric
domains [8]. For piezoelectric ceramics, the depolarization
temperature is an important parameter in view of practical
applications, which basically determines the applicable
temperature range [7,24]. The increase of the depolariza-
tion temperature in the Bi-deficient specimens can find an
explanation in terms of the presence of oxygen vacancies in
these specimens. Successive ferroelectric–antiferroelectric–
paraelectric transitions with temperature have been pre-
viously observed in varieties of lead-based complex
perovskite-type compounds and NBT-based compositions
[23,25]. The intermediate antiferroelectric state has been
defined as an incommensurate structure, which may not be
strictly classified as a normal antiferroelectric state and can
be explained in light of a subtle modulation of spontaneous
polarization [23,26,27]. The weak permittivity humps and
the loss peaks in Fig. 5 can be viewed as a dielectric
response to such incommensurate modulation. Based upon
transmission electron microscopy observation, it has been
revealed that there is a direct interaction between ferro-
electric domains and the incommensurate modulation, with Fig. 8. Piezoelectric properties of ceramic specimens as a function of Bi
ferroelectric domain walls playing a role as barriers [26]. content.
For the Bi-deficient specimens, the clamping effect of
oxygen vacancies on the motion of ferroelectric domain increasing Bi deficiency amount. Comparatively, the
walls can dynamically suppress the degree of the sponta- electromechanical coupling factor (kp) appears to be
neous polarization modulation. Thus, compared with the somewhat insensitive to the Bi efficiency, with the
specimen with x ¼ 0.500, these specimens necessitate parameter fluctuating within 21.2–25.6%. The variation
higher temperatures to overcome the clamping effect and of the piezoelectric constant and mechanical quality factor
thermally drive the ferroelectric–antiferroelectric transi- with Bi deficiency amount can be understood in relation to
tion. This is considered to be the reason for the increase of the clamping effect of oxygen vacancies on ferroelectric
the depolarization temperature with introducing of Bi domains. The clamping effect hindered sufficient reorienta-
deficiency. tion of ferroelectric domains during electrical poling, which
Fig. 8 shows the piezoelectric properties of the ceramic is greatly detrimental to the piezoelectric constant [29].
specimens as a function of Bi content. The specimen with Correspondingly, the internal attrition resulting from the
x ¼ 0.500 gives a relatively large piezoelectric constant motion of ferroelectric domains was also reduced, leading
(d33) of 176 pC/N, which is rather similar to our previous to an increase in the mechanical quality factor.
result of 180 pC/N achieved from (Na0.5Bi0.5)0.94Ba0.06TiO3 With respect to the data of the present work, it is
ceramics prepared by the citrate method [16]. These values noteworthy that even a slight Bi deficiency can cause a
are much larger than those obtained from the NBT–BT remarkable deterioration of the ferroelectric and piezo-
ceramics with MPB compositions, which were prepared by electric properties, including an increase of the coercive
the conventional solid-state method [2,8,28]. It demon- field, a decline of the remanent polarization and a
strates the advantage of the citrate method in producing reduction of the piezoelectric constant. It suggests a
the NBT–BT ceramics, attributable to the fine and uniform necessity of carefully controlling Bi stoichiometry of
morphology together with high chemical homogeneity of (Na0.5Bi0.5)0.93Ba0.07TiO3 ceramics during the preparation
the powders derived from the citrate method [16]. One can process in order to achieve the desired electrical properties.
find a monotonic decrease of the piezoelectric constant and This may be given as a clue to further research on the
a steady increase of the mechanical quality factor (Qm) with ceramics.
 ARTICLE IN PRESS
Q. Xu et al. / Journal of Physics and Chemistry of Solids 69 (2008) 1996–2003 2003

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