 NAME : Muhammad Waseem Siddiqui

 ROLL NO : IM-038
 BATCH : 2015-16
 COURSE : Tool Design
 SUBMITTED TO : Dr.Wasif
 ASSIGNMENT 2
Tool Design ASSIGNMENT NO#2 IM-038

CVD & PD COATINGS

PHYSICAL VAPOR DEPOSITION (PVD)
Physical vapour deposition (PVD) is fundamentally a vaporization coating technique, involving
transfer of material on an atomic level and it describes a variety of vacuum deposition
methods which can be used to produce thin films It is an alternative process to electroplating. The
process is similar to chemical vapour deposition (CVD) except that the raw materials that is the
material going to be deposited starts out in solid form, whereas in CVD, the precursors are
introduced to the reaction chamber in the gaseous state.
In general, PVD is used to deposit titanium, titanium nitrate, tantalum, tantalum nitrate, aluminium
and a very thin film of copper called seed layer.

 Working Concept
PVD is characterized by a process in which the material goes from a condensed phase to a
vapour phase and then back to a thin film condensed phase, these processes are carried out
under vacuum conditions. The process involved four steps:
1. Evaporation
During this stage, a target, consisting of the material to be is bombarded by a high energy source
such as a beam of electrons or ions. This dislodges atoms from the surface of the target,
‘vaporizing’ them.
2. Transportation
This process simply consists of the movement of ‘vaporized’ atoms from the target to the
substrate to be coated and will generally be a straight line affair.
3. Reaction
In some cases, coatings will consist of metal oxides, nitrides, carbides and other such materials.
In these cases, the target will consist of the metal. The atoms of metal will then react with the
appropriate gas during the transport stage.
4. Deposition
This is the process of coating build up on the substrate surface. Depending on the actual process,
some reactions between target materials and the reactive gases may also take place at the
substrate surface simultaneously with the deposition process. The component that is to be
coated is placed in a vacuum chamber. The coating material is evaporated by intense heat from,
for example, a tungsten filament.
Tool Design ASSIGNMENT NO#2 IM-038

 Importance of PVD Coatings

PVD coatings are deposited for numerous reasons. Some of the main ones are
1. Improved hardness and wear resistance
2. Reduced friction
3. Improved Oxidation resistance
4. The use of such coatings is aimed at improving efficiency through improved performance
and longer component life.

 PVD Processes
1. Sputter Deposition.
2. Cathodic arc deposition.
3. Pulsed laser deposition.
4. ELECTRON BEAM PHYSICAL VAPOR DEPOSITION.

 Applications
PVD coatings are generally used to improve Hardness, Wear Resistance and Oxidation
Resistance. Thus, such coatings use in a wide range of applications such as:
1. Aerospace
2. Automotive
3. Surgical/Medical
4. Dies and moulds for all manner of material processing
5. Cutting tools
 Advantages
1. Materials can be deposited with improved properties compared to the substrate
material
2. Almost any type of inorganic material can be used as well as some kinds of organic
materials.
3. The process is more environmentally friendly than processes such as electroplating.
 Disadvantages
1. It is a line of sight technique meaning that it is extremely difficult to coat undercuts
and similar surface features
2. High capital cost
3. Some processes operate at high vacuums and temperatures requiring skilled
operators
4. Processes requiring large amounts of heat require appropriate cooling systems
5. The rate of coating deposition is usually quite slow
Tool Design ASSIGNMENT NO#2 IM-038

CHEMICAL VAPOR DEPOSITION (CVD)

CVD is a chemical process used to produce high quality, high-performance, solid materials. The
process is often used in the semiconductor industry to produce thin films. CVD is the formation of a
non-volatile solid film on a substrate by the reaction of vapor phase chemicals (reactants) that
contain the required constituents. The reactant gases are introduced into a reaction chamber and
are decomposed and reacted at a heated surface to form the thin film.

 Types
1. Hot-wall thermal CVD (batch operation type)
2. Plasma assisted CVD & Direct liquid injection (CVD)
3. Atmospheric pressure CVD (APCVD) – CVD process at atmospheric pressure.
4. Low-pressure CVD (LPCVD)- CVD process at sub atmospheric pressures.
5. Ultrahigh vacuum CVD (UHVCVD) – CVD process at very low pressure.

 Steps
1. Transport of reactants by forced convection to the deposition region.
2. Transport of reactants by diffusion from the main gas stream through the boundary layer to
the wafer surface.
3. Adsorption of reactants on the wafer surface.
4. Surface processes, including chemical decomposition or reaction, surface migration to
attachment sites (such as atomic-level ledges and kinks), site incorporation, and other
surface reactions.
5. Desorption of by-products from the surface
6. Transport of by-products by diffusion through the boundary layer and back to the main gas
stream
7. Transport of by-products by forced convection away from the deposition region

 Applications
 Coatings
1. Such as wear resistance, Corrosion resistance.
2. High temperature protection, Erosion protection and Combinations thereof.
 Semiconductors and related devices
1. Integrated circuits.
2. Sensors.
3. Optoelectronic devices.
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 Dense structural parts

1. CVD can be used to produce components that are difficult or uneconomical to produce using
conventional fabrication techniques. Dense parts produced via CVD are generally thin walled
and maybe deposited onto a mandrel or former.
 Optical Fibres
1. For telecommunications.

 Composites
1. Preforms can be infiltrated using CVD techniques to produce ceramic matrix composites
such as carbon-carbon, carbon-silicon carbide and silicon carbide-silicon carbide composites.
This process is sometimes called chemical vapour infiltration or CVI.
 Powder production and fibers.
 Catalysts
 Nano machines
 Advantages
1. High growth rates possible
2. Can deposit materials which are hard to evaporate
3. Good reproducibility
4. Can grow epitaxial films

 Disadvantages
1. High temperatures
2. Complex processes
3. Toxic and corrosive gasses
 Commercially important materials prepared by CVD
 Metals
CVD for tungsten is achieved from tungsten hexafluoride (WF6), which may be deposited in two
ways:
WF6 → W + 3 F2
WF6 + 3 H2 → W + 6 HF
Other metals, notably aluminium and copper, can be deposited by CVD. As of 2010,
commercially cost-effective CVD for copper did not exist, although volatile sources exist, such as
Cu(hfac)2. Copper is typically deposited by electroplating. Aluminium can be deposited
from triisobutylaluminium (TIBAL) and related organoaluminium compounds. CVD
for molybdenum, tantalum, titanium, nickel is widely used.These metals can form
useful silicides when deposited onto silicon. Mo, Ta and Ti are deposited by LPCVD, from their
pentachlorides. Nickel, molybdenum, and tungsten can be deposited at low temperatures from
their carbonyl precursors.

 Diamond
CVD growth allows one to control the properties of the diamond produced CVD can be used to
produce a synthetic diamond by creating the circumstances necessary for carbon atoms in a gas
to settle on a substrate in crystalline form. CVD diamond growth typically occurs under low
pressure) and involves feeding varying amounts of gases into a chamber, energizing them and
providing conditions for diamond growth on the substrate. The gases always include a carbon
source, and typically include hydrogen as well, though the amounts used vary greatly depending
on the type of diamond being grown Energy sources include hot filament, microwave power,
Tool Design ASSIGNMENT NO#2 IM-038
and arc discharges, among others. The energy source is intended to generate a plasma in which
the gases are broken down and more complex chemistries occur. There are numerous benefits;

1. Diamond has the highest thermal conductivity of any bulk material, layering diamond onto
high heat producing electronics (such as optics and transistors) allows the diamond to be
used as a heat sink.
2. Diamond films are being grown on valve rings, cutting tools, and other objects that benefit
from diamond's hardness and exceedingly low wear rate.
3. Diamond's very high scratch resistance and thermal conductivity, combined with a
lower coefficient of thermal expansion than Pyrex glass, a coefficient of friction close to and
strong lipophilicity would make it a nearly ideal non-stick coating for cookware .

 Graphene
Many variations of CVD can be utilized to synthesize graphene.
1. Carbon source
The most popular carbon source used to produce graphene is methane gas.
2. Use of catalyst
The use of catalyst is viable in changing the physical process of graphene production. Notable
examples include iron nanoparticles, nickel foam, and gallium vapor. These catalysts can either
be used in situ during graphene or situated at some distance away at the deposition area. The
direct growth of high-quality, large single-crystalline domains of graphene on a dielectric
substrate is of vital importance for applications in electronics and optoelectronics.
3. Physical conditions
Physical conditions such as surrounding pressure, temperature, carrier gas, and chamber
material play a big role in production of graphene. Most systems use LPCVD with pressures
ranging from 1 to 1500 Pa. Low pressures are used more commonly as they help prevent
unwanted reactions and produce more uniform thickness of deposition on the substrate.
On the other hand, temperatures used range from 800–1050 °c High temperatures translate to
an increase of the rate of reaction.
4. Carrier gas
Hydrogen gas and inert gases such as argon are flowed into the system. These gases act as a
carrier, enhancing surface reaction and improving reaction rate, thereby increasing deposition of
graphene onto the substrate.
5. Chamber material
Standard quartz tubing and chambers are used in CVD of graphene, Quartz is chosen because it
has a very high melting point and is chemically inert. In other words, quartz does not interfere
with any physical or chemical reactions regardless of the conditions.
6. Methods of analysis of results
Raman spectroscopy, X-ray spectroscopy, transmission electron microscopy (TEM), and scanning
electron microscopy (SEM) are used to examine and characterize the graphene samples.
Raman spectroscopy is used to characterize and identify the graphene particles; X-ray
spectroscopy is used to characterize chemical states; TEM is used to provide fine details
regarding the internal composition of graphene; SEM is used to examine the surface and
topography.
Sometimes, atomic force microscopy (AFM) is used to measure local properties such as friction
and magnetism.