Electronics Device Manual (NEC-354) : Department of Electronics & Communication Engineering

ELECTRONICS DEVICE
MANUAL
(NEC-354)
DEPARTMENT OF ELECTRONICS &

COMMUNICATION ENGINEERING
27, Knowledge Park-III, Greater Noida, (U.P.)

Phone : 0120-2323854-58
website :- www.dronacharya.info
CONTENTS
S.NO. TITLE PAGE NO.
1. Syllabus for NEC-354 Lab………………………………. 3
2. Study and Evaluation Scheme…………………………… 4
3. List of Experiments……………………………………… 5
4. Index……………………………………………………... 6
5. Experiment No. 1…………………………………………7
6. Experiment No. 2…………………………………………13
7. Experiment No. 3…………………………………………18
8. Experiment No. 4…………………………………………23
9. Experiment No. 5…………………………………………28
10. Experiment No. 6……………………………………........33
11. Experiment No. 7…………………………………………39
12. Experiment No. 8…………………………………………44
13. Experiment No. 9…………………………………………49
14. Experiment No. 10 …………………………. …………… 53
2 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

DRONACHARYA GROUP OF INSTITUTIONS, GR. NOIDA.
SYLLABUS
(AS PER PRESCRIBED BY UPTU, LUCKNOW)
NEC-353: ELECTRONICS DEVICE LTP
003
1. Study of lab equipments and components: CRO, Multimeter, Function Generator, Power
supply- Active, and Passive Components & Bread Board.
2. P-N Junction Diode: Characteristics of PN Junction diode-Static and dynamic resistance
measurement from graph.
3. Applications of PN junction diode: Half & Full wave rectifier- Measurement of Vrms, Vdc,
and ripple factor-use of filter- ripple reduction (RC Filter)-Clipper & Clamper
4. Properties of junctions Zener diode characteristics. Heavy doping alters the reverse
characteristics. Graphical measurement of forward and reverse resistance.
5. Application of Zener diode: Zener diode as voltage regulator. Measurement of percentage
regulation by varying load resistor.
6. Characteristic of BJT: BJT in CB and CE configuration- Graphical measurement of h
parameters from input and output characteristics. Measurement of Av, AI, Ro and Ri of CE
amplifier with potential divider biasing.
7. Characteristic of FET: FET in common source configuration. Graphical measurement of its
parameters gm, rd & m from input and output characteristics.
8. Characteristic of silicon-controlled rectifier.
9. To plot V-I Characteristics of DIAC.
10. To draw V-I characteristics of TRIAC for different values of Gate Currents.

STUDY AND EVALUATION SCHEME
SESSIONAL EVALUATION:-
CLASS TEST : 10 MARKS
TEACHER’S ASSESMENT : 10 MARKS
EXTERNAL EXAM : 30 MARKS
TOTAL : 50 MARKS

LIST OF EXPERIMENTS
1. Study of lab equipments and components: CRO, Multimeter, Function Generator, Power
supply- Active, and Passive Components & Bread Board.
2. P-N Junction Diode: Characteristics of PN Junction diode-Static and dynamic resistance
measurement from graph.
3. Applications of PN junction diode: Half & Full wave rectifier- Measurement of Vrms, Vdc,
and ripple factor.
4. Properties of junctions Zener diode characteristics. Heavy doping alters the reverse
5. Application of Zener diode: Zener diode as voltage regulator. Measurement of percentage
regulation by varying load resistor.
6. Characteristic of BJT: BJT in CE configuration- Graphical measurement of h parameters
from input and output characteristics.
7. Characteristic of FET: FET in common source configuration. Graphical measurement of its
parameters gm, rd & m from input and output characteristics.
8. Characteristic of silicon-controlled rectifier.
9. To plot V-I Characteristics of DIAC.
10. To draw V-I characteristics of TRIAC for different values of Gate Currents.

INDEX
SIGNATURE OF FACULTY/
S.NO. NAME OF EXPERIMENT GRADE
DATE OF EVALUATION

EXPERIMENT NO. 01
1. AIM: To Study of lab equipments and components: CRO, Multimeter, Function Generator,
Power supply- Active, and Passive Components & Bread Board.
2. APPARATUS REQUIRED:
S.No. Apparatus / Software Used Specification Quantity
1. CRO 1
2. Function Generator 1
3. Multimeter 1
4. Resistance & Capacitance 1
5. Power supply & Bread Board 1
3. THEORY:
CRO (Cathode Ray Oscilloscope)
The oscilloscope is one of the most important electronic instruments available for making circuit
measurements. It displays a curve plot of time-varying voltage on the oscilloscope screen. The
oscilloscope provided with Multisim Electronics Workbench is a dual trace oscilloscope that
looks and acts like a real oscilloscope. A dual trace oscilloscope allows the user to display and
compare two time-varying voltages at one time.
The controls on the oscilloscope are as follows:
1. The TIME BASE control adjusts the time scale on the horizontal axis in time per division
when Y/T is selected. When B/A is selected, the horizontal axis no longer represents time. The
horizontal axis now represents the voltage on the channel A input and vertical axis represents the
voltage on channel B input. When A/B is selected, the horizontal axis represents the voltage on
the channel B input and the vertical axis represents the voltage on the channel A input. The
X_POS control determines the horizontal position where the curve plot begins.
2. The CHANNEL A control adjusts the volts per division on the vertical axis for the channel A
curve plot. The Y-POS control determines the vertical position of the channel A curve plot

relative to the horizontal axis. Selecting AC places a capacitance between the channel A vertical
input and the circuit testing point. Selecting “0” connects channel A vertical input to ground.
3. The CHANNEL B control adjusts the volts per division of the vertical axis for the channel B
curve plot. The Y-POS determines the vertical position of the channel B curve plot relative to the
horizontal axis. Selecting AC places a capacitance between the channel B vertical input and the
circuit test point. Selecting “0” connects the channel B vertical input to ground.
4. The trigger settings control the conditions under which a curve plot is triggered (begins to
display). Triggering can be internal (based on one of the input signals) or external (based on a
signal applied to the oscilloscope external trigger input). With internal triggering AUTO, A, or
B. If A is selected, the curve plot will be triggered by channel A input signal. If |B is selected, the
curve plot will be triggered by channel B input signal. If you expect a flat input waveshape or
you want the curve plot displayed as soon as possible, select AUTO. The display can be set to
start on positive or negative slope of the input by selecting the appropriate EDGE selection. The
trigger LEVEL control determines the voltage level of the input signal waveform, in divisions on
the vertical axis, before the waveform will begin to display.
Function Generator
The function generator is a voltage source that supplies different time-varying voltage functions.
The Multisim Electronics Workbench can supply sine wave, square wave, and

triangular wave voltage functions. The wave shape, frequency, amplitude, duty cycle, and dc
offset can be easily changed. It has three voltage output terminals. Connect the COM terminal
to ground symbol. The +ve terminal provides output voltage that is positive with respect to
the COM terminal and the –ve terminal proves an output voltage that is negative with respect
to the COM terminal.
The controls on the function generator are as follows:
1. You can select a wave shape by clicking the appropriate wave shape on the top of the function
generator.
2. The frequency control allows you adjust the frequency of the output voltage up to 999 MHz.
Click up or down arrow to adjust the frequency, or click the frequency box and type the desired
frequency.
3. The AMPLITUDE control allows you to adjust the amplitude of the output voltage measured
from the reference level (common) to peak level. The peak to peak value is twice the amplitude
setting.
4. The OFFSET control adjusts the dc level of the voltage curve generated by the function
generator. An offset of 0 positions the curve plot along the x-axis with an equal positive and
negative voltage setting. A positive offset raises the curve plot above the x-axis and a negative
offset lowers the curve plot below the x-axis.
Multimeter
A multimeter or a multitester, also known as a VOM (Volt-Ohm meter), is an electronic
measuring instrument that combines several measurement functions in one unit. A typical
multimeter may include features such as the ability to measure voltage, current and resistance.
Multimeters may use analog or digital circuits—analog multimeters (AMM) and digital
multimeters (often abbreviated DMM or DVOM.) Analog instruments are usually based on a
microammeter whose pointer moves over a scale calibrated for all the different measurements
that can be made; digital instruments usually display digits, but may display a bar of a length
proportional to the quantity being measured. A multimeter can be a hand-held device useful for
basic fault finding and field service work or a bench instrument which can measure to a very
high degree of accuracy. They can be used to troubleshoot electrical problems in a wide array of
industrial and household devices such as electronic equipment, motor controls, domestic
appliances, power supplies, and wiring systems.
Power Supply
A power supply is a device that supplies electric power to one or more electric loads. The term
is most commonly applied to devices that convert one form of electrical energy to another,
though it may also refer to devices that convert another form of energy (mechanical, chemical,
solar) to electrical energy. A regulated power supply is one that controls the output voltage or
current to a specific value; the controlled value is held nearly constant despite variations in either
load current or the voltage supplied by the power supply's energy source.
Every power supply must obtain the energy it supplies to its load, as well as any energy it
consumes while performing that task, from an energy source

Active Elements & Passive Elements
"The elements within a circuit will either control the flow of electric energy or respond to it.
Those elements which control the flow of electric energy are known as active elements and those
which dissipate or store the electric energy are passive elements."
"The three linear passive elements are the Resistor, the Capacitor and the Inductor. Examples of
non-linear passive devices would be diodes, switches and spark gaps. Examples of active devices
are Transistors, Triacs, Varistors, Vacuum Tubes, relays, solenoids and piezo electric devices."
Bread Board
A breadboard (protoboard) is a construction base for prototyping of electronics. The term is
commonly used to refer to solderless breadboard (plugboard). Because the solderless breadboard
does not require soldering, it is reusable. This makes it easy to use for creating temporary
prototypes and experimenting with circuit design.
4. RESULTS AND DISCUSSION:

Study of lab equipments- CRO, Multimeter, Function Generator, Power supply- Active, and
Passive Components & Bread Board has been studied successfully.

5. PRE EXPERIMENT Q.B:
Q1. What is CRO?
Ans. The oscilloscope is one of the most important electronic instruments available for making
circuit measurements. It displays a curve plot of time-varying voltage on the oscilloscope screen.
Q2. What do you mean by active element and passive element ?
Ans. "The elements within a circuit will either control the flow of electric energy or respond to
it. Those elements which control the flow of electric energy are known as active elements and
those which dissipate or store the electric energy are passive elements."
6. POST EXPERIMENT Q.B:
Q1. What is multimeter?

Ans. A multimeter also known as a VOM (Volt-Ohm meter), is an electronic measuring
instrument that combines several measurement functions in one unit. A typical multimeter may
include features such as the ability to measure voltage, current and resistance.
Q2. What is function generator?

Ans. The function generator is a voltage source that supplies different time-varying voltage
functions. The Multisim Electronics Workbench can supply sine wave, square wave, and
triangular wave voltage functions. The waveshape, frequency, amplitude, duty cycle, and dc
offset can be easily changed. It has three voltage output terminals.

EXPERIMENT NO. 02
1. AIM: To study P-N Junction Diode: Characteristics of PN Junction diode-Static and

dynamic resistance measurement from graph.
1. Diode Kit 1
2. Multimeter 1
3. Connecting leads
3. THEORY:
A diode is the basic electronic component. It’s property is that it can conduct only in one
direction. A diode can be made by joining a p type semiconductor and an n type semiconductor.
At the junction point there will be a voltage drop due to the migration of carriers. The voltage at
this barrier is known as barrier potential. Ideally the barrier potential is zero. But in practical case
there will be a drop of 0.7 Volts. When the P side of diode is connected to the positive of power
supply and N region is connected to the negative of supply, the diode is said to be in forward
biased condition. At this condition, if the applied voltage is greater than the barrier potential of
the diode, it starts conduction. After the diode is arrived in the conduction mode, the drop across
it remains at 0.7 V. After the conduction starts, if the voltage is increased further, current trough
it increases linearly with voltage.
When the supply voltage is reversed the diode is said to be in reverse biased condition. Here
there is no conduction at lower voltage values .If we increase the voltage value further ,it is
observed that at a voltage the current sharply increases due to the breakdown of the P-N junction.
This damages the device. So care is to be taken while connecting diode in a circuit.

4. CIRCUIT DIAGRAM:
5. PROCEDURE
Forward biased diode:
1. Connect the diode with supply terminals as shown in fig.1. The diode’s anode should be
connected to +terminal of the supply.
2. Select the meter range switches (both) towards forward bias side. Keep both supply control to
minimum.

3. Switch on the power. Gradually increase the forward bias supply (0-15V) in small steps. Note
the volt and current readings from the panel meters as forward voltage V F and corresponding
current IF in mA.
4. Take the readings till mA meter approaches near maximum deflection . Switch off the power,
turn supply control back to minimum. Prepare the table between VF and IF from the
observations.
5. Plot the forward biased diode graph taking VF readings along the x-axis and IF readings
along the y-axis. Find the slope of the line from the linear part of the curve as shown in fig3a.
Calculate the dynamic resistance of the diode as
RF = δ VF / δ IF
Reverse biased diode:
1. Keep both meter range select switches towards the reverse bias side. Connect diode as shown
in fig2, such that its cathode is connected with the +dc terminal of the supply.
2. Switch on the power. Increase the reverse bias supply (0-90V) in small steps and note reverse
voltage as –ve volts and corresponding current from the panel meters.
3. As breakdown appears, the reverse currnet will rise rapidly at this point at small increamnet of
reverse bias voltage , note the reading and bring reverse supply back to minimum.
4. Switch off the power and tabulate the results as –VR and -IR . Plot the graph as shown in fig3b.
Calculate the reverse resistance in constant region.
5. Comparing result from both observations, shows that the forward resistance of the diode is
very much less than the reverse resistance. This property allows to flow the current in one
direction only.

6. OBSERVATION:
For forward bias For reverse bias
S.No. Voltage (V) Current (mA) S.No. Voltage (V) Current (µA)
7. CALCULATION:
The dynamic resistance of the diode as
RF = δ VF / δ IF
The static resistance of the diode as
RF = VF / IF
The V-I characteristics (forward and reverse biased) is plotted on the graph which is true
according to theory.
Q1. What is diode?
Ans. A diode is the basic electronic component. It’s property is that it can conduct only in one
direction. A diode can be made by joining a p type semiconductor and an n type semiconductor.
Q2. What do you mean by dynamic forward resistance?
Ans. The resistance offered by the PN junction under a.c. condition is called dynamic forward
resistance and given as RF = δ VF / δ IF.

Q1. What is knee voltage for Si and Ge diode respectively?
Ans. Knee voltage for Si= 0.7V and for Ge = 0.3V.
Q.2. What do you mean by PIV?
Ans. It is defined as the maximum value of reverse voltage that a diode can withstand without
destroying the junction.
11. PRECAUTIONS:
1. While doing the experiment, do not exceed the rating of the diode. This may lead to damage of
the diode.
2. Connect the voltmeter and ammeter in correct polarities.
3. Do not switch on the power supply unless you have checked the circuit connections as per the
circuit diagram.

EXPERIMENT NO. 03
1. AIM: Applications of PN junction diode: Half & Full wave rectifier- Measurement of VRMS,
VDC, and ripple factor.
1. Diode Kit 1
2. CRO 1
3. Connecting leads
3. THEORY:
A diode is using to pass current in a single direction. Alternating current is a current which flows
in both directions. In some applications we need dc power supply. A method to obtain dc supply
is by using batteries. But it is not economical at all times. It is possible to obtain dc from ac
supply .That process is known as rectification. Rectification is of two types: 1.half wave
rectification 2.full wave rectification
HALF WAVE RECTIFIERS
In a half wave rectifier only one half cycle of ac voltage is taking. The circuit is given. Here only
one diode is using. During the positive half cycle of ac voltage the diode conducts. So current
flows through load. During the negative half cycle, the diode is reverse biased .So no current
flows through the diode. This type of rectification needs only one diode. But the efficiency is not
so good as that of full wave rectifier
FULL WAVE RECTIFIERS
Unlike a half wave rectifier, a full wave rectifier conducts in both half cycles of ac voltage.

A full wave rectifier can be implemented in two ways
a) Full wave bridge rectifier
In full wave bridge rectifiers 4 diodes are using. During positive half cycle, D1 and D4 are in
forward biased condition. In the negative half cycle of ac D3 and D2 are in forward biased
condition. So in both the half cycles current through the load is in single direction. Thus
rectification can be done. This circuit does not need a centre tap rectifier. But it requires more
number of diodes than centre tap and half wave rectifiers.
b) Full wave centre tap rectifier
This is another method to obtain full wave rectification. In this method only two diodes are
using. But it requires a center tap transformer. During the positive half cycle diode D1 conducts.
In the negative half cycle diode D2 conducts. So in both half cycles current flowing through load
in same direction. Thus rectification can be obtained.
4. CIRCUIT DIAGRAM:
Fig.1 Connection diagram for half wave rectifier.

Fig.2. Connection diagram for full wave rectifier.
5. PROCEDURE:
For half wave rectifier circuit:
1. Connect the circuit as shown in fig.1. It becomes a half wave rectifier circuit since only diode
D1 is in circuit, note L is short circuited and C open.
2. Switch on the power.
3. Measure AC across the transformer secondary.
4. Note the reading of dc voltage from filter meter as VDC .Calculate the theoretical value and
compare it with found value, where theoretical value VDC={ VAC(RMS) * √2/ᴨ} .
5. Connect the AC voltmeter at the dc output socket fitted at +ve of RL side.
Note the AC ripple voltage as VR. Calculate the ripple factor as
Ripple factor R= VR / VDC .
For full wave (centre tapped) rectifier circuit:
1. Connect the circuit as shown in fig2, this will bring diode D3 in the circuit and it becomes a
full wave rectifier circuit.
2. Remaining steps as same as before.
6. OBSERVATION:
For half wave and full wave rectifier
S.No. Input AC VDC (V) VRMS at dc out (V) Ripple factor
7. CALCULATION:
DC output voltage, VDC={ VAC(RMS) * √2/ᴨ}
Ripple factor, R= VR / VDC .
Measurement of VRMS, VDC, and ripple factor for half wave and full wave rectifier is done
successfully.
Q1. What is a half wave rectifier?
Ans. In a half wave rectifier only one half cycle of ac voltage is taking. The circuit is given. Here
only one diode is using. During the positive half cycle of ac voltage the diode conducts. So
current flows through load. During the negative half cycle, the diode is reverse biased .So no
current flows through the diode. This type of rectification needs only one diode. But the
efficiency is not so good as that of full wave rectifier

Q2. What is a full wave rectifier?
Ans. Unlike a half wave rectifier, a full wave rectifier conducts in both half cycles of ac voltage.
So output gets in both the half cycles.
Q1. What are the two schemes of full wave rectifiers?
Ans. 1. Centre tap rectifier
2. Bridge rectifier
Q2. What are the advantages of bridge rectifier over center tap rectifier?
Ans.It does not need a centre tap transformer
Q3. What is the disadvantage of bridge rectifier over centre tap rectifier?
Ans.4 diodes are needed.
11. PRECAUTIONS:
the diode.
circuit diagram.

EXPERIMENT NO. 04
1. AIM: Properties of junctions Zener diode characteristics. Heavy doping alters the reverse
1. Zener diode BZX56 1

2. Voltmeter 1
3. Ammeter 1
4. Connecting wires
3. THEORY:
Zener diode is a P-N junction diode specially designed to operate in the reverse biased mode. It
is acting as normal diode while forward biasing. It has a particular voltage known as break down
voltage, at which the diode break downs while reverse biased. In the case of normal diodes the
diode damages at the break down voltage. But Zener diode is specially designed to operate in the
reverse breakdown region.
The basic principle of Zener diode is the Zener breakdown. When a diode is heavily doped, it’s
depletion region will be narrow. When a high reverse voltage is applied across the junction, there
will be very strong electric field at the junction. And the electron hole pair generation takes
place. Thus heavy current flows. This is known as Zener break down.
So a Zener diode, in a forward biased condition acts as a normal diode. In reverse biased mode,
after the break down of junction current through diode increases sharply. But the voltage across
it remains constant.

4. CIRCUIT DIAGRAM:

Fig.1a. Connection diagram reverse biased zener diode. Range 10V.
Fig.1b. Connection diagram forward biased zener diode. Range 1V.
5. PROCEDURE:
For zener diode reverse breakdown characteristics of given zener diode BZX56.
1. Connect the given diode as shown in fig.1a. Identify the voltage polarity meter and diode
polarity. Select voltmeter range to 10V. Select mode switch towards VZ mode.
2. Keep supply control to minimum (fully counter-clockwise). Switch on the power.
3. Gradually increase the supply voltage in small steps and note the readings VZ, IZ with each
increament till mA meter approaches to maximum.
4. Bring supply control to minimum.Select mode towards VS. Now again increase the supply and
note the input voltage VS with current IZ.
5. Plot the reverse bias curve from the observations. Find out the knee of the curve at minimum
current.

For zener diode forward breakdown characteristics of given zener diode BZX56.
1. Connect the given diode as shown in fig.1b. Identify the voltage polarity meter and diode’s
polarity. Select voltmeter range to 1V. Select mode switch towards VZ mode.
2. Keep supply control to minimum (fully counter-clockwise). Switch on the power.
3. Gradually increase the supply voltage in small steps and note the forward breakdown voltage
.Increase the supply further and note the current IZF . Increase further supply till current meter
approaches to maximum.
4. Plot the forward bias curve with the reverse bias in 1st quadrent. From the curve it is found that
the zener diodes exhibit very low resistance after forward breakdown in forward and reverse
bias.
6. OBSERVATION:
For circuit 1a.
S.No. Iz (mA) Vz (V) Vs (V)
For circuit 1a.
S.No. IzF (mA) Vz (V)
The V-I characteristic of zener diode is plotted in graph which is true according to theory.

Q1. What is zener diode?
Ans. Zener diode is a P-N junction diode specially designed to operate in the reverse biased
mode. It is acting as normal diode while forward biasing. It has a particular voltage known as
break down voltage, at which the diode break downs while reverse biased.
Q1. What is zener breakdown?
Ans. When a diode is heavily doped, it’s depletion region will be narrow. When a high reverse
voltage is applied across the junction, there will be very strong electric field at the junction. And
the electron hole pair generation takes place. Thus heavy current flows. This is known as Zener
break down.
10. PRECAUTIONS:
1.Keep your hand away from the main supply.
circuit diagram.

EXPERIMENT NO. 05
1. AIM: Application of Zener diode: Zener diode as voltage regulator. Measurement of

percentage regulation by varying load resistor.
1. Zener diode kit 1

2. Ammeter 1
3. Voltmeter 1
4. Connecting wires
3. THEORY:
Zener diode is a P-N junction diode specially designed to operate in the reverse biased mode. It
is acting as normal diode while forward biasing. It has a particular voltage known as break down
voltage, at which the diode break downs while reverse biased. In the case of normal diodes the
diode damages at the break down voltage. But Zener diode is specially designed to operate in the
reverse breakdown region.
The basic principle of Zener diode is the Zener breakdown. When a diode is heavily doped, it’s
depletion region will be narrow. When a high reverse voltage is applied across the junction, there
will be very strong electric field at the junction. And the electron hole pair generation takes
place. Thus heavy current flows. This is known as Zener break down.
So a Zener diode, in a forward biased condition acts as a normal diode. In reverse biased mode,
after the break down of junction current through diode increases sharply. But the voltage across
it remains constant. This principle is used in voltage regulator using Zener diodes.

4. CIRCUIT DIAGRAM:
5. PROCEDURE:
Input Characteristics:
1. Varying the input voltage keeping load constant: Connect the circuit as showin in fig.1. Keep
supply control at minimum.
2. Keep the load RL at 750ohms for Q-pont. Increase the input voltage VS in step of 1Volt and
note V1 and V2. Where V1 is the input and V2 is the output voltage across zener.

3. Plot the curves between input –output at load constant. Find out the δV1 and δV2 from the
plot and calculate the line regulation.
Output characteristics:
1. Varying the load keeping input voltage constant: Connect the circuit as showin in fig.1. Keep
supply control at minimum.
2. Keep load RL at 3000ohms. Increase the input voltage V1 to 12 Vdc.
3. Decrease the load and note the voltage V2 with load value.
4.Plot the curves between load and output voltage at input constant. Find out the δV2 and V Z at
Q point at set load value from the input plot and calculate load regulation.
Note: δV2 is zener voltage at minimum and maximum load current in stable region. The Q
point is fixed in input characteristic plot. The input voltage held at 12V constant. The δV2 is very
small note it carefully.
6. OBSERVATION:
Shunt regulation (Load regulation), Input voltage constant at 10V
S.no. Output voltage (V) Load (Ω)

Shunt regulation (Line regulation), load constant at 300Ω
S.no. Input voltage (V) Output voltage (V)
7. CALCULATION:
%Line regulation = [δV2/ δV1] * 100 %
Load regulation% = [δV2/ VZ at Q point] * 100 %.
Realization of zener diode by voltage regulator is verified.
Q1. What is the basic principle of Zener diode?
Ans. Zener breakdown
Q2. What is Zener break down?
Ans.When a diode is heavily doped, it’s depletion region will be narrow. When a high reverse
voltage is applied across the junction, there will be very strong electric field at the junction. And
the electron hole pair generation takes place. Thus heavy current flows. This is known as Zener
break down.

Q1. At what voltage zener breakdown and avalanche breakdown occur?
Ans. Zener breakdown occur before 6V and avalanche breakdown occur after 6V.
11. PRECAUTIONS:
the diode.
circuit diagram.

EXPERIMENT NO. 06
1. AIM: Characteristic of BJT: BJT in CE configuration- Graphical measurement of h

parameters from input and output characteristics. Measurement of Av, AI, Ro and Ri of CE
amplifier with potential divider biasing.
1. Transistor NPN BC 147 1

2. Ammeter 1
3. Voltmeter 1
4. Connecting Leads
3. THEORY:
A transistor is a 3 terminal device. It can be considered as the combination of two diodes. In a

transistor there are 3 regions: 1.emitter 2.base 3.Collector. In an npn transistor the emitter and
collector are n types, and base is p type. In any transistor emitter is heavily doped, base is lightly
doped and collector is moderately doped. For the proper working of transistor the emitter base
junction should be forward biased and collector base junction should be reverse biased. In a
common emitter configuration, emitter is common to both input and output.
Transistor (bipolar transistor-BJT) is a current controlled device. The input characteristics

are a plot between the base current and base emitter voltage. The dynamic input resistance can be
calculated by taking the slope of the input characteristics by keeping the output voltage constant.
The output characteristics is a plot between collector current and collector emitter voltage by
keeping the input current constant..Now the common emitter current gain ß can be calculated as
a ratio between collector current and base current at a particular value of output voltage
(collector emitter voltage).

The input characteristics:
To draw input characteristic the input supply VBE is varied and corresponding current IB is
noted with each increamental step, while the output supply is kept constant throughout the step.
The input impedance, Ri = Δ VBE / Δ IB at VCE constant (1)
Fig.2 Input characteristic curve
The output characteristics:
To draw output characteristics the output supply VCE is varied and corresponding current IC is
noted with each increamental step, while the input current IB is kept constant throughout the step.
The output impedance, Ro = Δ VCE / Δ IC at IB constant (2)
The current gain, β = Δ IC / Δ IB at VCE constant (3)

4. CIRCUIT DIAGRAM:

5. PROCEDURE:
To plot the input and output characteristics of given transistor in common emitter configuration.
(A) For input characteristics.(Fig.1)
1. Keep VCE supply at dc 5volt i.e. VCE =5V.
2. Slowly increase VBE supply in small steps. Note IB and VBE for each increamental step.
3. Tabulate all observations.
4. Plot the input characteristic curve from the observations between IB and VBE. Find out the
slope of the curves as given in relation see fig2.
(B) For output characteristics.(Fig.1)
1. Keep VCE =0. Adjust IB =40µA.
2. Slowly increase VCE supply in small steps. The µAmmeter deflects back as the VCE get
increased. This is due to reverse saturation current ICEO. Recorrect IB to determined value 40µA.
Note IC and VCE with each increamental step.
3. Repeat step2 for different values of IB say 80µA increament for each step. Care should be
taken to recorrect IB through the steps.
4. Tabulate the observations.
5. Plot the output characteristic curves from the observations , between IC and VCE. Fix an
operating point in the middle of the curves, find out the slope of the curve as given in relation (2)
and (3). See fig3.

6. OBSERVATION:
At constant, VCE =5V At constant, IB =40µA
S.No. VBE IB S.No. VBE IB
Thus the input and output characteristic of CE configuration is plotted.
Q1. What is transistor?
Ans. A transistor is a 3 terminal device. It can be considered as the combination of two diodes.
In a transistor there are 3 regions: 1.emitter 2.base 3.Collector. In an npn transistor the emitter
and collector are n types, and base is p type. In any transistor emitter is heavily doped, base is
lightly doped and collector is moderately doped.
Q2. What are the various configuration of transistor?
Ans. i. Common emitter configuration.
ii. Common base configuration.
iii. Common collector configuration.
Q1. What do you mean by current gain?
Ans. Current gain is defined as the ratio of output current to the input current.

11. PRECAUTIONS:
1. Power supply voltage should be zero before starting the experiment.
circuit diagram.

EXPERIMENT NO. 07
1. AIM: Characteristic of FET: FET in common source configuration. Graphical

measurement of its parameters gm, rd & m from input and output characteristics.
1. FET Kit 1
2. DC power supply 0-30V 1
3. Patch cords 1
4. Connecting wire
3. THEORY:
FET is the Field Effect Transistor. It is 3 terminal voltage controlled device. It’s terminals are
drain, source and gate. Gate is the controlling terminal. Consider an n channel device. The gate
(p material) is diffused. At zero gate voltage there is no reverse voltage at the channel. So as Vds
(drain source voltage) increases current Ids also increases linearly. As the voltage is increased, at
a particular voltage, pinch off occurs .This voltage is known as pinch off voltage. After pinch off
drain current remains stationary .If we apply a gate voltage (negative voltage) the pinch ff occurs
early.
The parameters of FET:
1. Drain resistance, rd:- the drain resistance of MOSFET is defined as follows:
Rd = Δ VDS / Δ ID , VGS at constant value (1)
Where VDS is the drain source supply, ID corresponding drain current and VGS is the voltage
between gate and source.

2. Transconductance, gm:- It is defined as the control of gate voltage over drain current and
measured by forward transconductance gfs as
gfs = Δ ID / Δ VGS , Δ VDS at constant value (2)

4. CIRCUIT DIAGRAM:
5. PROCEDURE:
(1) To measure drain current ID at different values of gate source voltage VGS
1.1. Keep both supply controls at minimum position (fully counter- clockwise). Connect gate-
source connections with gate supply VGS as shown in fig.1.
1.2. Switch on the power. Adjust drain supply, VDS at 10V and VGS at +0.25V. Note the current
ID , mA at VGS = +0.25V.
1.3. Decrease VGS in small steps and note the corresponding drain current till VGS = 0V.
1.4. Reverse the gate –source connections as shown in fig.1. Now the gate terminal is negative
than source.
1.5. Increase the gate voltage in small steps in negative direction and note the drain current for
each increament of VGS.
1.6. Repeat the steps at VDS = 15V. Tabulate the readings.
(2) To measure drain current ID at different values of drain source voltage VDS.

2.1. Remain the setup as step 1.4. Keep VGS=0V. Increase VDS in small steps and note drain
current with each increament of VDS.
2.2.Repeat the step 2.1 at -0.5, -1.00, -1.50 and -2.00 Volts of VGS. Tabulate the readings.
2.3. From the table plot the graph between VGS and ID for constant values of VDS. Plot the
another graph between ID and VDS at constant values of VGS.
6. OBSERVATION:
S.No. VGS (V) ID mA at VDS S.No. VDS (V) ID mA at VGS
01 +0.25 01 +0.25
02 -0.50 02 -0.50
03 -1.00 03 -1.00
04 -1.50 04 -1.50
05 -2.00 05 -2.00
The output characteristics of FET is drawn on the graph from which we obtain that practical
observation are true according to theory.
Q1. What is FET?
Ans. FET is the Field Effect Transistor. It is 3 terminal voltage controlled device. It’s terminals
are drain, source and gate. Gate is the controlling terminal.

Q2. What do you mean by transconductance?
Ans. Transconductance, gm:- It is defined as the control of gate voltage over drain current and
measured by forward transconductance.
Q1. What is advantage of FET over BJT?
Ans. a) No minority carriers
b) High input impedance
c) It is a voltage controlled device
d) Better thermal stability
10. PRECAUTIONS:
1. Keep your hands away from main supply.
2. Use patch cords carefully.
circuit diagram.

EXPERIMENT NO. 08
1. AIM: Characteristic of silicon-controlled rectifier.

1. SCR Kit 1
2. Multimeter 2
3. Patch cards
3. THEORY:
An elementary circuit diagram for obtaining static V-I characteristics of a thyristor is shown in
Fig. 4.2 (a). The anode and cathode are connected to main source through the load. The gate and
cathode are fed from a source Es which provides positive gate current from gate to cathode.

Fig. 4.2 (b) shows static V-I characteristics of a thyristor. Here Va is the anode voltage across
thyristor terminals A, K and Ia is the anode current. Typical SCR V-I characteristic shown in Fig.
4.2 (b) reveals that a thyristor has three basic modes of operation; namely, reverse blocking
mode, forward blocking (off-state) mode and forward conduction (on-state) mode. These three
modes of operation are now discussed below:
Reverse Blocking Mode: When cathode is made positive with respect to anode with switch S
open, Fig. 4.2 (a), thyristor is reverse biased as shown in Fig. 4.3 (a). Junctions J1 J 3 are seen to
be reverse biased whereas junction J2 is forward biased. The device behaves as if two diodes are
connected in series with reverse voltage applied across them. A small leakage current of the
order of a few milliamperes (or a few microamperes depending upon the SCR rating) flows. This
is reverse blocking mode, called the off-state, of the thyristor. If the reverse voltage is increased,
then at a critical breakdown level, called reverse breakdown voltage VBR, an avalanche occurs
at J1 and J3 and the reverse current increases rapidly. A large current associated with VBR gives
rise to more losses in the SCR. This may lead to thyristor damage as the junction temperature
may exceed its permissible temperature rise. It should, therefore, be ensured that maximum
working reverse voltage across a thyristor does not exceed VBR. When reverse voltage applied
across a thyristor is less than VBR, the device offers a high impedance in the reverse direction.
The SCR in the reverse blocking mode may therefore be treated as an open switch.
Note that V-I characteristic after avalanche breakdown during reverse blocking mode is
applicable only when load resistance is zero, Fig. 4.2 (b). In case load resistance is present, a
large anode current associated with avalanche breakdown at VBR would cause substantial voltage
drop across load and as a result, V-I characteristic in third quadrant would bend to the right of
vertical line drawn at VBR.
Forward Blocking Mode: When anode is positive with respect to the cathode, with gate circuit
open, thyristor is said to be forward biased as shown in Fig. 4.3 (b). It is seen from this figure
that junctions J1, J3 are forward biased but junction J2 is reverse biased. In this mode, a small
current, called forward leakage current, flows as shown in Figs. 4.2 (b) and 4.3 (b). In case the
forward voltage is increased, then the reverse biased junction J 2 will have an avalanche
breakdown at a voltage called forward break over voltage VB0. When forward voltage is less
than VBO, SCR offers high impedance. Therefore, a thyristor can be treated as an open switch
even in the forward blocking mode.
Forward Conduction Mode: In this mode, thyristor conducts currents from anode to cathode
with a very small voltage drop across it. A thyristor is brought from forward blocking mode to
forward conduction mode by turning it on by exceeding the forward breakover voltage or by
applying a gate pulse between gate and cathode. In this mode, thyristor is in on-state and behaves
like a closed switch. Voltage drop across thyristor in the on state is of the order of 1 to 2 V
depending on the rating of SCR. It may be seen from Fig. 4.2 (b) that this voltage drop increases
slightly with an increase in anode current. In conduction mode, anode current is limited by load
impedance alone as voltage drop across SCR is quite small. This small voltage drop v T across the
device is due to ohmic drop in the four layers.
4. CIRCUIT DIAGRAM:

5. PROCEDURE:
1. Connections are made as shown in the circuit diagram.
2. The value of gate current IG, is set to convenient value by adjusting VGG.
3. By varying the anode cathode voltage VAA gradually in step by step, note down the
corresponding values of VAK and IA . Note down VAK and IA at the instant of firing of SCR and
after firing (by reducing the voltmeter ranges and ammeter ranges) then increase the supply
voltage VAA . Note down corresponding values of VAK and IA.
4. The point at which SCR fires, gives the value of break over voltage VBO.
5. Agraph of VAK V/S IA is to be plotted.
6. The on state resistance can be calculated from the graph by using a formula.
7. The gate supply voltage VGG is to be switched off.
8. Observe the ammeter reading by reducing the anode cathode supply voltage V AA .The point at
which ammeter reading suddenly goes to zero gives the value of holding current IH .
9. Steps no.2, 3, 4, 5, 6, 7, 8 are repeated for another value of gate current IG .
6. OBSERVATION:

The V-I characteristics of silicon controlled rectifier is plotted on the graph which is true
according to theory.
Q1. What is SCR?
Ans. A silicon-controlled rectifier (or semiconductor-controlled rectifier) is a four-layer solid

state current. The name "silicon controlled rectifier" or SCR is General Electric's trade name for
a type of thyristor. SCRs are mainly used in devices where the control of high power, possibly
coupled with high voltage, is demanded. Their operation makes them suitable for use in medium
to high-voltage AC power control applications, such as lamp dimming, regulators and motor
control.
Q1. What are various turn on method for thyristor?
Ans. i) Forward voltage triggering.
ii) gate triggering
iii) dv/dt triggering
iv) temperature triggering
v) light triggering
10. PRECAUTIONS:
1. Keep your hand away from main supply.
circuit diagram.

EXPERIMENT NO. 09
1. AIM: To plot V-I Characteristics of DIAC.
1. DIAC Kit 1
2. Multimeter 2
3. Connecting Leads
3. THEORY:
A diac is an important member of the thyristor family and is usually employed for triggering
triacs. A diac is a two-electrode bidirectional avalanche diode which can be switched from off-
state to the on-state for either polarity of the applied voltage. This is just like a triac without gate
terminal, as shown in figure. Its equivalent circuit is a pair of inverted four layer diodes. Two
schematic symbols are shown in figure. Again the terminal designations are arbitrary since the
diac, like triac, is also a bilateral device. The switching from off-state to on-state is achieved by
simply exceeding the avalanche break down voltage in either direction.

Volt-ampere characteristic of a diac is shown in figure. It resembles the English letter Z because
of the symmetrical switching characteristics for either polarity of the applied voltage.
The diac acts like an open-circuit until its switching or breakover voltage is exceeded. At that
point the diac conducts until its current reduces toward zero (below the level of the holding
current of the device). The diac, because of its peculiar construction, does not switch sharply into
a low voltage condition at a low current level like the SCR or triac. Instead, once it goes into
conduction, the diac maintains an almost continuous negative resistance characteristic, that is,
voltage decreases with the increase in current. This means that, unlike the SCR and the triac, the
diac cannot be expected to maintain a low (on) voltage drop until its current falls below a
holding current level.
4. CIRCUIT DIAGRAM:
5. PROCEDURE:
1. Connect the millimetre, DIAC, Voltmeter to the circuit.

2. Switch on the power supply.
3. Increase the supply voltage in steps; note the corresponding currents and voltages
for each step.
4. Plot the graph of VI characteristics.

5. Reverse the terminal of DIAC. Increase the supply voltage in steps, note the
corresponding currents and voltages for each step
6. Plot the graph of VI characteristics.
6. OBSERVATION:
The V-I characteristics of DIAC is plotted on the graph which is true according to theory.
Q1. What is DIAC?
Ans. DIAC is a three layer; two terminal semiconductor devices.MT1 and MT2 are the two main
terminals which are interchangeable .It acts as a bidirectional avalanche diode. It does not have
any control terminal. It has two junctions J1 and J2 resembles a bipola r transistor,
the central layer is free from any connection with the terminals. It acts as a switch in both
directions.
Q1. What are the applications of DIAC?
Ans. DIACS are widely used in AC applications and it is found that the device is "reset" to its
non-conducting state, each time the voltage on the cycle falls so that the current falls below the
holding current. As the behaviour of the device is approximately equal in both directions, it can
provide a method of providing equal switching for both halves of an AC cycle, e.g for triacs.

10. PRECAUTIONS:
1. Keep your hand away from the main supply.
circuit diagram.

EXPERIMENT NO. 10
1. AIM: To draw V-I characteristics of TRIAC for different values of Gate Currents.
1. TRIAC Kit 1
2. Multimeter 2
3. Connecting Leads
3. THEORY:
Typical V-I characteristics of a triac are shown in figure. The triac has on and off state
characteristics similar to SCR but now the char acteristic is applicable to both positive and
negative voltages. This is expected because triac consists of two SCRs connected in parallel but
opposite in direc tions.
MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant.
As already said in previous blog posts, the gate triggering may occur in any of the following four
modes.
Quadrant I operation : VMT2, positive; VG1 positive
Quadrant II operation : VMT21 positive; VGl negative
Quadrant III operation : VMT21 negative; VGl negative
Quadrant IV operation : VMT21 negative; VG1 positive
where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.
The device, when starts conduction permits a very heavy amount of current to flow through it.
This large inrush of current must be restricted by employing external resist ance, otherwise the
device may get damaged.
The gate is the control terminal of the device. By applying proper signal to the gate, the firing
angle of the device can be controlled. The circuits used in the gate for triggering the device are
called the gate-triggering circuits. The gate-triggering circuits for the triac are almost same like
those used for SCRs. These triggering circuits usually generate trigger pulses for firing the
device. The trigger pulse should be of sufficient magnitude and duration so that firing of the
device is assured. Usually, a duration of 35 us is sufficient for sustaining the firing of the device.
A typical triac has the following voltage/current values:
 Instantaneous on-state voltage – 1.5 Volts

 On-state current – 25 Amperes
 Holding current, IH - 75 Milli Amperes
 Average triggering current, IG – 5 Milli Amperes

4. CIRCUIT DIAGRAM:

5. PROCEDURE:
6. OBSERVATION:

The V-I characteristics of TRIAC is plotted on the graph which is true according to theory.
Q1. What is TRIAC?
Ans. TRIAC, from Triode for Alternating Current, is a generalized trade name for an electronic
component that can conduct current in either direction when it is triggered (turned on), and is
formally called a bidirectional triode thyristor or bilateral triode thyristor. TRIACs belong to the
thyristor family and are closely related to Silicon-controlled rectifiers (SCR). However, unlike
SCRs, which are unidirectional devices (i.e. can conduct current only in one direction), TRIACs
are bidirectional and so current can flow through them in either direction.
Q1. What do you mean by gate threshold current?
Ans. A TRIAC starts conducting when a current flowing into or out of its gate is sufficient to
turn on the relevant junctions in the quadrant of operation. The minimum current able to do this
is called gate threshold current and is generally indicated by IGT
Q2. What are the applications of TRIAC?
Ans. Low power TRIACs are used in many applications such as light dimmers, speed controls
for electric fans and other electric motors, and in the modern computerized control circuits of
many household small and major appliances.
10. PRECAUTIONS:
1. Keep your hand away from main supply.
circuit diagram.


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ELECTRONICS DEVICE

DEPARTMENT OF ELECTRONICS &

27, Knowledge Park-III, Greater Noida, (U.P.)

2. Study and Evaluation Scheme…………………………… 4

5. Experiment No. 1…………………………………………7

6. Experiment No. 2…………………………………………13

7. Experiment No. 3…………………………………………18

8. Experiment No. 4…………………………………………23

9. Experiment No. 5…………………………………………28

10. Experiment No. 6……………………………………........33

11. Experiment No. 7…………………………………………39

12. Experiment No. 8…………………………………………44

13. Experiment No. 9…………………………………………49

14. Experiment No. 10 …………………………. …………… 53

2 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

3 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

CLASS TEST : 10 MARKS

TEACHER’S ASSESMENT : 10 MARKS

EXTERNAL EXAM : 30 MARKS

4 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

5 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

6 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

7 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

8 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

10 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

4. RESULTS AND DISCUSSION:

11 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

Q1. What is CRO?

Q2. What do you mean by active element and passive element ?

6. POST EXPERIMENT Q.B:

Q1. What is multimeter?

Q2. What is function generator?

12 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

1. AIM: To study P-N Junction Diode: Characteristics of PN Junction diode-Static and

S.No. Apparatus / Software Used Specification Quantity

13 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

Forward biased diode:

14 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

Reverse biased diode:

15 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

For forward bias For reverse bias

The dynamic resistance of the diode as

The static resistance of the diode as

8. RESULTS AND DISCUSSION:

9. PRE EXPERIMENT Q.B:

Q1. What is diode?

Q2. What do you mean by dynamic forward resistance?

16 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

Q1. What is knee voltage for Si and Ge diode respectively?

Ans. Knee voltage for Si= 0.7V and for Ge = 0.3V.

Q.2. What do you mean by PIV?

2. Connect the voltmeter and ammeter in correct polarities.

17 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

S.No. Apparatus / Software Used Specification Quantity

HALF WAVE RECTIFIERS

FULL WAVE RECTIFIERS

18 | DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING,

a) Full wave bridge rectifier