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2SK1095
Silicon N-Channel MOS FET

Application
TO–220FM
High speed power switching

Features
• Low on-resistance 2 12
• High speed switching 3
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source 1
• Suitable for motor drive, DC-DC converter, 1. Gate
power switch and solenoid drive 2. Drain
3. Source
3

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

———————————————————————————————————————————
Drain to source voltage VDSS 60 V
———————————————————————————————————————————
Gate to source voltage VGSS ±20 V
———————————————————————————————————————————
Drain current ID 25 A
———————————————————————————————————————————
Drain peak current ID(pulse)* 100 A
———————————————————————————————————————————
Body to drain diode reverse drain current IDR 25 A
———————————————————————————————————————————
Channel dissipation Pch** 30 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at TC = 25 °C

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2SK1095

Table 2 Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

———————————————————————————————————————————
Drain to source breakdown V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
voltage
———————————————————————————————————————————
Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
voltage
———————————————————————————————————————————
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10 V *
———————————————————————————————————————————
Static drain to source on state RDS(on) — 0.033 0.04 Ω ID = 15 A, VGS = 10 V *
resistance ——————— ——————————–
0.05 0.06 ID = 15 A, VGS = 4 V *
———————————————————————————————————————————
Forward transfer admittance |yfs| 122 0— S ID = 15 A, VDS = 10 V
———————————————————————————————————————————
Input capacitance Ciss — 1400 — pF VDS = 10 V, VGS = 0,
————————————————————————————————
Output capacitance Coss — 720 — pF f = 1 MHz
————————————————————————————————
Reverse transfer capacitance Crss — 220 — pF
———————————————————————————————————————————
Turn-on delay time td(on) — 15 — ns ID = 15 A, VGS = 10 V,
————————————————————————————————
Rise time tr — 130 — ns RL = 2 Ω
————————————————————————————————
Turn-off delay time td(off) — 270 — ns
————————————————————————————————
Fall time tf — 180 — ns
———————————————————————————————————————————
Body to drain diode forward VDF — 1.3 — V IF = 25 A, VGS = 0
voltage
———————————————————————————————————————————
Body to drain diode reverse trr — 135 — ns IF = 25 A, VGS = 0,
recovery time diF/dt = 50 A/µs
———————————————————————————————————————————
* Pulse Test

See characterist curves of 2SK972.

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2SK1095

Power vs. Temperature Derating Maximum Safe Operation Area

60 500
300
Channel Dissipation Pch (W)

100

10
Drain Current ID (A)
is

µs
th

10
40
in ted

0
n i 1

PW

µs
30 io m m
at is li (on)

D
s

=
r

C
pe ea DS

10
O
10 O ar y R

pe

m
s
ra
b

(1
tio
20

Sh
n
(T C

ot
3

)
=
25
°C
1.0

)
Ta = 25°C
0.5
0 50 100 150 1 0.3 1.0 3 10 30 100
Case Temperature TC (°C) Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance γS (t)

Normalized Transient Thermal Impedance vs. Pulse Width

3
TC = 25°C
1.0 D=1

0.5

0.3
0.2
0.1 θch–c(t) = γS(t) · θch–c
0.1 θch–c = 4.17°C/W, TC = 25°C
0.05
PDM

0.03 D = PW
0.02 ulse
T
0.01 hot P PW
1 S T
0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (s)

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