Edc Assingment

Question 1: What names are applied to the two types of BJT transistors?
Sketch the
basic construction of each and label the various minority and majority carriers in
each. Draw the graphic symbol next to each?
ANSWER:
·0 The basic two types of BJT transistors are PNP and NPN transistors.
·1 Figure 1. shows the basic construction of the PNP and NPN transistors with the majority
and minority carriers followed by their graphic symbols
·2 A silicon diode conducts electric current when the voltage across the diode reaches 0.7
volts to create a forward bias. while germanium diode begins to conduct electric current
at a lower voltage, when the voltage applied across the diode reaches 0.3 volts.
Question 2: What is the major difference between a bipolar and a unipolar device?
How must the two transistor junctions be biased for proper transistor amplifier
operation?
ANSWER:
Bipolar Transistor:
Bipolar transistor is a three terminal device where holes and electron participates in the injuction
process into the oppositely polarized material, so it conducts using both minority and majority
carriers
Unipolar Transistor:
In Unipolar transistor only one carrier is employed so it uses either holes (P-channel) or Electrons
(N-channels) for conduction
They must be biased forward biased and reverse biased in the forward biased the voltage potential
is connected negative to the P-type material and positive to the N-type material across the diode.
while in the reverse biased the voltage potential is connected positive to the P-type material and
negative to the N-type materail across the diode.
Question 3: What is the source of the leakage current in a transistor? Sketch a

figure similar to Fig. 1 for the forward-biased junction of an npn transistor.
Describe the resulting carrier motion.
Fig : 1 pnp Transistor
ANSWER:
·3 The minority-current component which is called the leakage current (I co) is the source of
leakage current in the transistor.
·4 In the forward npn transistor the n side is more doped then the p side,which lead to more
current flowing across the junction by the majority carrier electrons from the n-side than
the majority carriers holes from the P-side.Thus, conduction through the forward-bias
junction is mainly by the majority carrier electrons from the n-side.
·5 Electrons then leave the negative terminal of the battery and enter the n-side, where they
pass easily through it, cross the junction and combine with holes in the p-side since they
are majority current carriers in the n-side.For each electron that fills the holes in the p-
side an other electron will leave the p-side creating a new hole and enter the positive
terminal of the battery.
Fig. 2
·6 Figure 2. shows the forward bias junction for the npn transistor with its resulting carrier
motion
Question 4: Sketch a figure similar to Fig. 2 for the majority- and minority-carrier
flow of an npn transistor. Describe the resulting carrier motion.
ANSWER:
·7 The majority current carriers in NPN transistor are elestrons. N-region has higher
concentration of free electron then p-region.On the other hand P-region has higher
concentration of holes then the N-region.As a result of the repulsive force between the N-
regions with the negative pole of the batteries, electron start to flow to the P-region.
·8 The free electrons: negative charge carriers flow emitter to base while holes; positive
charge carriers flow from base to emitter. This flow of charges conduct electric current.
·9 Figure 3. shows the majority and minority charge carriers flow of the npn transister with
it's resulting carrier motion.
Fig. 3
Question 5: Which of the transistor currents is always the largest? Which is always the
smallest? Which two currents are relatively close in magnitude?
ANSWER:
·10 The emitter current IE is always the largest one.

The emitter current IE is the largest as it is the sum of the base and collector
·11 The base current IB is always the smallest.

The base current IB is smallest since the base is very thin and lightly doped so a small
percentage of the total current.IE will flow in the base circuit than in the collector circuit.
·12 The collector current IC and emitter current IE are relatively close in magnitude.
The collector current Ic and the the current, I B are relatively close as the current that
enters the transistor is relatively the same as the current that exists. Also, they are
governed by the following expression Ic= a IB where (a) is the constant alpha and is a
very small value, close to unity.

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Question 1: What names are applied to the two types of BJT transistors?

Question 3: What is the source of the leakage current in a transistor? Sketch a

·10 The emitter current IE is always the largest one.

·11 The base current IB is always the smallest.

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