Assignment 1

Subject: Electronic Engineering 2

Student Name: WONG KAH QUAN
Matric ID.: HA18015
Lecturer Name: MR. ZULKIFLI MD YUSOF

Simulating and Comparing Common Emitter Configuration Biasing

Circuit of Bipolar Junction Transistor(BJT) with manual calculations
Part 1: Calculating Q-Point

A NPN-BJT is choosen from components’ list in Multisim. The model of this transistor is
2N5551.

Initially, a circuit as below is contructed to find the Q-Point or the DC Operating Point of the
transistor. Q-Point can be in terms of Voltage or Current, but for this assignment, Q-
PointVoltage will be focused.

Figure 1: Circuit to determine the Q-Point

Figure 2: Finding Q-Point which is mid point of the blue and yellow axes
Using DC Sweep, which is a DC Analysis simulation, I’m able to obtain the I-V
Characteristics of the NPN-BJT. A range of IB between 0.0001A and 0.001A are plotted on
the graph.
By selecting the Ib = 0.0004A, using “Cursor” function, the Vcemax and Vcemin are
determined, hence the Q-Point.

It’s shown that at IB = 0.0004A; Vcemin = 319.2905mV & Vcemax = 15.0067V.

The mid-point of this Vcemin & Vcemax is approximately the Q-Point, hence
𝑉𝑐𝑒𝑚𝑎𝑥 − 𝑉𝑐𝑒𝑚𝑖𝑛
𝑄 − 𝑃𝑜𝑖𝑛𝑡 =
2
(15.0067 − 319.2905)𝑉
𝑄 − 𝑃𝑜𝑖𝑛𝑡 =
2
𝑄 − 𝑃𝑜𝑖𝑛𝑡 = 7.3437V

From this Voltage Q-Point, Ic can be found by extrapolating to y-axis, Ic = 58.7994mA.

Q-Point: For a transistor circuit to amplify it must be properly biased with dc voltages. The
dc operating point between saturation and cut-off is called the Q-point. This point is also
known as DC Operating Point which is the point where the Ac load line crosses the DC load
line. This point is where the DC voltage or current at a specified terminal of an active device
(a transistor or vacuum tube) with no input signal apply. A bias circuit is a portion of the
device's circuit which supplies this steady current or voltage, which will be explain in next
part of this assignment.

Current Gain, β
𝐼𝐶
𝐶𝑢𝑟𝑟𝑒𝑛𝑡 𝐺𝑎𝑖𝑛, 𝛽 =
𝐼𝐵

From the DC Sweep Analysis and I-V Characteristics Obtained, it is known that:

IB = 0.0004A; IC = 58.7994mA.
58.7994mA
𝐶𝑢𝑟𝑟𝑒𝑛𝑡 𝐺𝑎𝑖𝑛, 𝛽 =
0.0004A

𝐶𝑢𝑟𝑟𝑒𝑛𝑡 𝐺𝑎𝑖𝑛, 𝛽 = 146.9985

Part 2: Setting up Voltage Divider Biasing Circuit based on Q-Point, when Ib = 0.0004A
Biasing of circuit is done to set the Q-Point (Current or Voltage) to the correct level so that
any AC Input signal can be amplified by the transistor.

Figure 3: Voltage Divider Biasing Circuit

Figure 4: Q-Point of this Voltage Divider Biasing Circuit

Voltage Divider Biasing is set up, where VceQ= 7.53966V, 𝐼𝐵 = 0.4mA, IceQ= 58.7994mA is
based on, to find the optimum resistance for 4 of the resistors for the Q-Point close to VceQ
found in the previous circuit.

Assuming 𝑉𝐸 = 3.6563𝑉 , and since 𝑉𝑐𝑐 = 15𝑉, hence 𝑉𝑐 = 11𝑉.

𝑉𝑐 = 𝑉𝑐𝑐 − 𝑉𝑅𝑐
11 = 15 − 𝐼𝑐 𝑅𝑐
11 = 15 − (58.7994𝑚𝐴)𝑅𝑐
𝑅𝐶 = 68.02791 Ω
𝑹𝑪 ≈ 𝟖. 𝟎𝟑 Ω

Since 𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵 , hence, IE = 59.1994mA;

Using Ohm’s Law, 𝑉𝐸 = 𝐼𝐸 𝑅𝐸 , 3.6563𝑉 = (59.1994mA) RE,
RE = 61.7625 Ω
RE ≈ 61.77 Ω

At Node of Base,
Let R2 = 1000 Ω,
VBE = VB – VE, since we know that VBE ≈ 0.7, VE = 3.6563V, hence VB = 4.3563V
𝑉𝐵 − 0
= 𝐼2
𝑅2
4.3563𝑉 − 0
= 𝐼2
1000
I2 = 4.3563 mA, also at the same node, by applying Kirchhoff’s Current Law,
𝐼𝑅1 = 𝐼𝑅2 + 𝐼𝐵
𝐼𝑅1 = 4.3563𝑚𝐴 + 0.4𝑚𝐴 = 4.7563 mA
15 − 𝑉𝐵
= 𝐼𝑅1
𝑅1
15 − 𝑉𝐵
= 𝑅1
𝐼𝑅1
15 − 4.3563
= 𝑅1
4.7563𝑚𝐴
R1 = 2237.810903 Ω
R1 ≈ 2237.811 Ω

By using DC Operating Point Analysis, I obtain VceQ = 7.53966V whereas there’s only
negligible difference from initial VceQ = 7.3437𝑉. Hence, this biasing circuit is acceptable.

Part 3: Setting up Common Emitter Configuration Biasing Circuit

By using the same Voltage Divider Biasing Circuit, I’m able to further construct Common
Emitter Configuration Biasing Circuit by adding capacitors, Load Resistor and AC Voltage
Source.

Constructed Biasing Circuit is illustrated as below:

Figure 5: Common Emitter Configuration Biasing Circuit

- Capacitor of C3 is to bypass the Resistor RE. Hence, RE is short circuited.

- For Rin & Rout, I used “Probes” to calculate as it can form expression to find both
resistance by using Single Frequency AC Analysis. The results are shown in Part 4 of
this assignment.

Brief Explanation about Common Emitter Configuration Biasing Circuit

In common emitter configuration, base is the input terminal, collector is the output
terminal and emitter are the common terminal for both input and output. That means the base
terminal and common emitter terminal are known as input terminals whereas collector
terminal and common emitter terminal are known as output terminals. In common emitter
configuration, the emitter terminal is grounded so the common emitter configuration is also
known as grounded emitter configuration. The supply voltage between base and emitter is
denoted by VBE while the supply voltage between collector and emitter is denoted by VCE. In
common emitter (CE) configuration, input current or base current is denoted by IB and output
current or collector current is denoted by IC.

Part 4: Calculating Mid-Band Gain(dB), Input & Output Resistance of BJT, Input and Output
Voltage, Voltage Gain

Voltage Gain, Av
AC Model is constructed for manual calculations.

Figure 6: AC Model to find Vin & Vout , followed by Av

For 𝑅𝜋 ,
𝑉𝑇
𝑅𝜋 =
𝑖𝐵
𝑤ℎ𝑒𝑟𝑒 𝑇ℎ𝑒𝑟𝑚𝑎𝑙 𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑎𝑡 𝑅𝑜𝑜𝑚 𝑡𝑒𝑚𝑝𝑒𝑟𝑎𝑡𝑢𝑟𝑒: 𝑉𝑇 = 26𝑚𝑉 , 𝑖𝐵 = 0.4𝑚𝐴
26𝑚𝑉
𝑅𝜋 =
0.4𝑚𝐴
𝑅𝜋 = 65 Ω

For Input Voltage,

𝑉𝑖𝑛 = 𝑖𝐵 𝑅𝜋

For Output Voltage,

𝑉𝑜𝑢𝑡𝑝𝑢𝑡 = 𝑖𝐶 (𝑅𝐶 ||𝑅𝐿𝑜𝑎𝑑 )
𝑉𝑜𝑢𝑡𝑝𝑢𝑡 = 𝛽𝑖𝐵 (𝑅𝐶 ||𝑅𝐿𝑜𝑎𝑑 )
For Voltage Gain, Av,

𝑉𝑜𝑢𝑡
𝐴𝑉 =
𝑉𝑖𝑛
𝛽𝑖𝐵 (𝑅𝐶 ||𝑅𝐿𝑜𝑎𝑑 )
𝐴𝑉 =
𝑖𝐵 𝑅𝜋
𝛽(𝑅𝐶 ||𝑅𝐿𝑜𝑎𝑑 )
𝐴𝑉 =
𝑅𝜋
(146.9985)(63.6967Ω)
𝐴𝑉 =
65 Ω
𝐴𝑉 = 144.05
𝐴𝑣 ≈ 144

By simulating the circuit in Multisim,

 Figure 7: Transient graph of Voltage(V) - Time(s)

At axis y2; Vout = -101.3891mV; Vin = 976.6238μV.

𝑉𝑜𝑢𝑡
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝐺𝑎𝑖𝑛, 𝐴𝑣 =
𝑉𝑖𝑛
−101.3891𝑚𝑉
𝐴𝑣 =
976.6238 μV
𝐴𝑣 = −103.8159
𝐴𝑣 ≈ -104
Or by using Single Frequency AC Analysis,

Figure 8: Simulated Voltage Gain Value

Since there is only difference by 1, hence both values also acceptable.

Negative Voltage Amplification show that’s the output voltage is different phase with the
input voltage. As this configuration is an “Inverting Amplifier”, as an increase in Base
voltage causes a decrease in Vout and a decrease in Base voltage produces an increase in
Vout. In other word the output signal is 180o out-of-phase with the input signal. Hence, it is
denoted by a negative sign. However, for calculation purpose, the phase is not considered,
only the magnitude, hence,
𝑀𝑎𝑔𝑛𝑖𝑡𝑢𝑑𝑒 𝑜𝑓 𝑉𝑜𝑙𝑡𝑎𝑔𝑒, 𝐴𝑣 ≈ 104
By comparing with manual calculations,
Parameter Simulation Generated Values Manual Calculations
Voltage Gain, Av 104 144

There is difference in output values. The manual calcultions tends to higher Voltage Gain
than the Simulated Values, maybe due to neglection of internal resistances.
Mid Band Gain of a transistor: Is the transistor's gain at its mid frequencies; the mid band
gain is where the transistor's gain is at the highest and most constant level in its bandwidth.
The mid band gain is the most important region of transistor amplification. This is because
this is the region of frequencies where a transistor produces a constant and high level of gain.
When a transistor is rated for its gain or amplification factor, it is the mid band region that
this is referring to.

Mid Band Gain in terms of Decibels is given by the equation:

Av(dB) = 20 log Av(ratio)

By manual calculations,

𝑉𝑜𝑢𝑡𝑝𝑢𝑡
𝐴𝑣 (𝑑𝐵) = 20 𝑙𝑜𝑔
𝑉𝑖𝑛𝑝𝑢𝑡
𝐴𝑣 (𝑑𝐵) = 20 log(144)

𝐴𝑣 (𝑑𝐵) = 43.167 𝑑𝐵

Figure 9: AC Sweep to show Mid Band Gain

For simulation, a graph is obtained from AC Sweep, where, by looking at value of y2(y-axis
is magnitude in terms of Decibels), it is determined that

𝐴𝑣 (𝑑𝐵) = 40.2826 𝑑𝐵

By comparing them,
Parameter Simulation Generated Values Manual Calculations
Mid Band Gain 40.2826 𝑑𝐵 43.167 𝑑𝐵

There is only minimal difference compared to the manual calculations.

Input & Output Resistance

Calculating Input Resistance, Ri

Figure 10: AC Model to find Rin

To calculate Input Resistance, Rin , Kirchhoff’s Current Law is applied at node of Vintest ,
hence an equation as below is formed.
𝑖𝑖𝑛𝑡𝑒𝑠𝑡 = 𝑖𝑅𝐵 + 𝑖𝐵
𝑤ℎ𝑒𝑟𝑒 𝑖𝑖𝑛𝑡𝑒𝑠𝑡 𝑖𝑠 𝑐𝑢𝑟𝑟𝑒𝑛𝑡 𝑓𝑟𝑜𝑚 𝑉𝑖𝑛𝑡𝑒𝑠𝑡 𝐴𝐶 𝑠𝑜𝑢𝑟𝑐𝑒

𝑉𝑖𝑛𝑡𝑒𝑠𝑡 𝑉𝑖𝑛𝑡𝑒𝑠𝑡
𝑖𝑖𝑛𝑡𝑒𝑠𝑡 = +
𝑅𝐵 𝑅𝜋
1 1
𝑖𝑖𝑛𝑡𝑒𝑠𝑡 = 𝑉𝑖𝑛𝑡𝑒𝑠𝑡 ( + )
𝑅𝐵 𝑅𝜋
𝑖𝑖𝑛𝑡𝑒𝑠𝑡 1 1
= +
𝑉𝑖𝑛𝑡𝑒𝑠𝑡 𝑅𝐵 𝑅𝜋
1 1 1
= +
𝑅𝑖𝑛𝑡𝑒𝑠𝑡 𝑅𝐵 𝑅𝜋
𝑜𝑟 𝑖𝑛 𝑜𝑡ℎ𝑒𝑟 𝑤𝑜𝑟𝑑𝑠, 𝑅𝑖𝑛𝑡𝑒𝑠𝑡 = 𝑅𝐵 || 𝑅𝜋
Where 𝑅𝜋 : Internal resistance of transistor from Base to Emitter
RB = R1 || R2 = 691.2 Ω
Knowing that
𝑉𝑇
𝑅𝜋 =
𝑖𝐵
𝑅𝜋 = 65Ω
Hence, substituting 𝑅𝜋 and RB into the equation, yields:
1 1 1
= +
𝑅𝑖𝑛𝑡𝑒𝑠𝑡 691.15𝛺 65𝛺

𝑅𝑖𝑛𝑡𝑒𝑠𝑡 = 59.41248 Ω = Rin

Simulation Generated values for Rin

By using Single Frequency Analysis @ 1MHz, I obtained:

Figure 11: Simulated Input Resistance Value

By comparing them,
Parameter Simulation Generated Values Manual Calculations
Input Resistance, Rin 59.41248 Ω 59.41248 Ω

Only very slight difference between them but no difference after rounded-off.

Calculating Output Resistance, Rout

Figure 12: AC Model to find Rout

To calculate Output Resistance Rout: -
-RLoad is short circuited
-Vintest is short circuited, hence iB = 0, then iC = βiB = 0.

By taking node at Vouttest,

𝑉𝑜𝑢𝑡𝑡𝑒𝑠𝑡
𝑖𝑜𝑢𝑡𝑡𝑒𝑠𝑡 = + 𝛽𝑖𝐵
𝑅𝐶
𝑉𝑜𝑢𝑡𝑡𝑒𝑠𝑡
𝑖𝑜𝑢𝑡𝑡𝑒𝑠𝑡 =
𝑅𝐶
𝑖𝑜𝑢𝑡𝑡𝑒𝑠𝑡 1
=
𝑉𝑜𝑢𝑡𝑡𝑒𝑠𝑡 𝑅𝐶
𝑉𝑜𝑢𝑡𝑡𝑒𝑠𝑡
𝑅𝐶 =
𝑖𝑜𝑢𝑡𝑡𝑒𝑠𝑡
𝑅𝐶 = 𝑅𝑜𝑢𝑡𝑡𝑒𝑠𝑡 = 𝑅𝑜𝑢𝑡

𝑅𝑜𝑢𝑡 = 68.03Ω

Or, graphically, when RLoad & Vintest are short circuited, the circuit will be same as below.

Figure 13: Rout after RLoad + Vintest short circuited

From the circuit itself, Rout can be obtained,

𝑅𝑜𝑢𝑡 = 𝑅𝐶 = 68.03Ω
Simulation Generated values for Rout
By using Single Frequency Analysis @ 1MHz, I obtained:

Figure 14: Simulated Output Resistance

By comparing them,
Parameter Simulation Generated Values Manual Calculations
Output Resistance, Rout 68.03 Ω 68.03 Ω

There is no difference between them.

Summary of comparisons:

Parameter Simulation Generated Values Manual Calculations

Voltage Gain, Av 104 144
Mid Band Gain 40.2826 𝑑𝐵 43.167 𝑑𝐵
Input Resistance, Rin 59.41248 Ω 59.41248 Ω
Output Resistance, Rout 68.03 Ω 68.03 Ω

Conclusion

Through this assignment, I’m able to get a better understanding of Bipolar Junction
Transistor. Many trial and errors are made to ensure getting the best results, with that, I
believe it helps me cement my knowledge about the topic and indirectly allows me to practise
answering question. On the other hand, this assignment opened chance for me to explore
various resources regarding Bipolar Junction Transistor as I did my research. Due to usage of
Multisim, it enables me to find precise answers in the future when I’m doing revisions,
whenever I have problems with exercises.