L-4ff -2/EEE Date: 01/04/2019

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

L-41T-2 B. Sc. Engineering Examinations 2017-2018

Sub: EEE 439 (Mobile Cellular Communications)

Full Marks: 2 I 0 Time: 3 Hours
The figures in the margin indicate full marks.
All the symbols and notations have their usual meanings. Make reasonable assumptions on any
missing information.
USE SEP ARA TE SCRIPTS FOR EACH SECTION
SECTION-A

There are FOUR questions in this section. Answer any THREE.

I. (a) Discuss the principle of operation of the following access techniques: (16)
(i) FDMA-FDD
(ii) TDMA-FDD
(iii) NB-TDMA-FDD
(iv) FDMA-TDD
(b) Define the spectral efficiency of a FDMA and W-TDMA system taking into
considerations the coverage area of a cluster. Find the expression of spectral efficiency in

channels/MHz-km2 and Exchanges/ MHz-km2. (9)

(c) An FDMA-FDD mobile cellular system has two-way system bandwidth of 25 MHz with
channel bandwidth of 36 kHz and Guard bandwidth of 20 kHz at two ends of the spectrum.
The number of control channel is 40 and coverage of a cluster is 20 km2 with frequency reuse

factor 7. Determine: (10)

(i) Number of channels available for data traffic per cell.
(ii) Spectral efficiency in channels/MHz- km2.

2. (a) What is spread-spectrum CDMA? Draw the block diagram of a direct sequence CDMA

system and derive the expression of signal to multi-access interference (MAl) ratio. (15)
(b) A DS-CDMA system is using the following user codes: (10)
[cl] = [lOIlOI]
[c2] = [IlOIOI]
[c3] = [101010]
Find whether the codes are mutually orthogonal or not.

(c) Draw and explain the following performance curves of a DS-CDMA system: (10)
(i) Bit error rate versus number of user with Gp as a parameter.
(ii) Capacity versus processing gain, Gp,

Contd P/2
 =2=

EEE 439
3. (a) Draw the reference architecture of GSM mobile cellular system and state the function of

each block. (15)

(b) Discuss the purpose of a 'S1M' and explain its operational principle. (10)
(c) Briefly explain the digital signal processing carried out for speech signal in a mobile

station (Ms) ofa GSM system with appropriate block diagram. (10)

4. (a) Explain the condition for orthogonality of two carriers and describe the signal processing
steps that are carried out in a orthogonal FDM (OFDM) modulator with necessary spectrum.

What are the purpose of using cyclic prefix (cp)? (15)

(b) Write short notes on: (any two) (20)
(i) Frequency Hopping (FH) COMA
(ii) Hand-off mechanisms
(iii) Channels in a GSM system

SECTION -B

There are FOUR questions in this Section. Answer any THREE.

5. (a) How does an LTV channel introduce frequency shift to the propagating signal? How is it
termed in mobile wireless communication? Define with analytical expression and schematic

~am. 00
(b) Define the channel correlation functions: delay PSD, channel coherence bandwidth and
channel coherence time. What will happen if channel coherence bandwidth be greater than or
smaller than the bandwidth of transmitted signal? Also mention the consequence when the

channel coherence time is greater than symbol duration. (10)

(c) What is multipath fading? ClassifY the fading and explain why short fading is severe for
mobile wireless communication.
Considering two-ray propagation model over flat plane deduce the expression of power

receive by the mobile station at a distance d from a BTS. Also show the path loss in dB. (6+ 11)

6. (a) What is near-far effect and how it can be equalized through power control? How delay

dispersion is mitigated in TDMA, FDMA and COMA wireless systems? (8)

(b) Why is diversity technique necessary for wireless systems? Briefly discuss different

diversity mechanisms for wireless systems. (12)

(c) Derive the expression of BER performance obtained at the mobile receiver using diversity
with maximal ratio combining for coherent BPSK transmission over Rayleigh fading

channel. Explain the effect of diversity on transmission performance. (15)

Contd P/3
 =3=

EEE 439
7. (a) In wireless network, how the system capacity can be expanded by using frequency reuse
technique? Depict a cellular network with hexagonal cells showing at least 2 or 3 clusters for
a frequency reuse pattern of i = 2,) = 1. Find the relation between cluster size Nand i,) and

hence derive that the distance between two nearest cochannel cells is given as D = .J3NR,
where R is radius of the hexagonal cell. Also calculate the frequency reuse ratio (q). How

does the cluster size affect the cellular system and how to optimize it? (10)
b) Considering cluster size of 7 and path loss exponent of 4, determine the value of signal-to-
cochannel interference (S/!) ratio in dB for the first tier for a cellular network for the worst
case. How S/1 will be changed for the inclusion of 2nd tier (for normal case)? What value of
cluster size will be suitable in order to obtain acceptable value of SII of 18 dB considering

worst case cochannel interference? (13)

(c) Consider a cellular system with a total bandwidth of 30 MHz. Each full duplex voice or
control channel uses two 25 kHz simplex channels. It is assumed that the system uses a reuse
pattern of (3, 0) and 0.75 MHz of the total bandwidth is allocated for control channels, the
system service area consists of 50 cells, the call blocking probability is 2%, as given by

Erlang-B formula. If the offered traffic per user is 0.025 Elrangs, calculate (12)
(i) the traffic load of each cell and the tmnking efficiency,
(ii) the total number of mobile users in each cell and in the system, respectively,
(iii) the number of mobile users per voice channel in each cell and in the system,
respectively.
(iv) the maximum number of users in service at any instant in the system, and
(v) determine S/1 in dB considering urban radio environment.

8. (a) A cellular network provider uses a digital TDMA scheme that can tolerate a signal-to-
interference ratio of 18 dB in the worst case, in a propagation environment with path loss
exponent of 4. Find the best value of frequency reuse pattern for (i) omnidirectional antenna,
(ii) 120° sectoring and (iii) 60° sectoring. Should sectoring be used? If yes, why? If sectoring
is used, should use l2000r 60° sectoring? Explain. What are the disadvantages of cell-

sectoring? (Consider perfect hexagonal cells and the interferences from first tier only.) (13)
(b) Consider a cellular system that employs omnidirectional antennas. (i) If the path loss
exponent is 4, how should be the transmitter power be changed in order to split a cell into
smaller cells each with a radius that is one-half of the radius of original cell? (ii) Show that a
cell can be split into 4 smaller cells. (iii) Provide the drawings that display how the new cells
would fit within the original large cell. How does cell splitting increase system capacity and

what are its disadvantages? (14)

(c) What are the key standards and typical attributes/service of 3G cellular network? What

are the key features supported in 4G network? (8)

 ,

320 Appendix , !. :,' :' ,c;' ; ..

.-0:'"

. SeCtion F. The ERlANG.8 AND ERLANG.( TABLES

Table F.2 Offered Tmffic Load in f-::rlangsin nn Erlang-B Syslem (Number of Channels from 21 1055) .: ,.:.. : 321
Channel Call llIocking Probability
Table f.3 . Offered Traffic Load in Erlangs in dn Erlang-B System (Number or Chari~cls f;om 56 10' 90)
Number 0.001 0.002 0.005 0.010 0.020 0.050 0.070 0.100
Channel
21 10.108 10.79.1 I 1.860 12.838 14.0.16 16.189 17.253 IS.651
Number 0.001 0.002 0.005 0.010 0.020 0.050 0.070
22 10.812 1'-525 12.6.15 13.651 14.896 17.132 18.238 19.692 0.100
56 '.17.460 .18.942 41.229 43.315 45.875 50.543 52.901 56.059
23 11.524 12.265 13.416 14.470 15.761 18.080 IO.n? 20.7.17
"57 ~ '38.291 39.793 42.109 44.222 46.816 51.541-\ . 5.1.940 .57.J44
24 12.24.1 13.011 14.20..1 15.295 16.631 19.0.11 20.219 21.784
39.124 41).645 42.990 45.130 47.758 52.55.1 54.978 -SK229
~5 12969 13.763 14.997 16.124 17.505 19.985 2L11-1 22.833
.59 39.959 41.498 43.873 46.039 48.700 5.1.559 5(,.0IS 59.315
2{) '1.1.701 14.522 15.795 16.959 18.3:<:J 20.9-l3 22.212 23.885
60 40.795 42.353 44.757 46.950 49.64-1 54.566 57.058 60.401
27 14.439 15.285 16.598 17,797 19.265 21.t){).t 23.213 24.939
61 41.63.1 43.210 45.642 47.861 50.589 55.573 58.098 61.488
~R 15.182 16.054 17.406 18.640 20.150 2:U167 2-1.216 25.995
62 42.472 44.06S 46.528 48.774 51.534 56.581 59_139 62 ..575
~9 15.930 16.828 1S.21 R 19.48721.039 25.221 27.053
. 63 43..1 13 44.927 47.4J6 49.68R 52.4~ I 57.590 60.J8J
30 16.()S--l 17.606 19.0J-l 63,663
20.337 21.9J~ 24.:S0~ 26.128 2H.IIJ
64 44.156 45.7R8 4H..105 50.603 53.42H 58.599 61.223 M.7jO
)I )7.442 18.389 19.05-1 21.191 22,827 25.773 27.2.,8 29.174
.65 44.')99 46.650 49.195 5J.518 54376 59.609 62.266 65.8.19
18.205 19.175 20.673 22.0.IR 23.725 2(l.7-l6 11\.2-19 30.237
66 45.H45 4751] 50.086 51.435 55.325 60.619 63.309 .66.9'27

i
33 18.97~ 19.96(, 21.505 22.909 24.6'.Xl 27.7'21 29.2f,~ 31.301
67 46_691 4X..17R 50.978 5.1.353 56275 61.630 64.35:; 6!{.Ol6
.14 19.7..12 20.76) 2.3.772 25.5~l) 30.::77
6~ 47.540 .19.24:'\ 51.87:2 54.272 57_216 62.6--t2 (,5 ..197 69~106
35 20.517 21.559 2.'.169 24.63S 26.4"35 2:9.677 31.2').1 .13.434
6Y :IS.31\1) .-'iO.110 52.76(1 55.11)1 5~.177 63.65.-\ 66A-+~ 70.19(,
21.296 22.361 2..1.00f) 25.507 2:7.:~.I"3 .10.657 3-L50J
;{J .19.~.19 50.979 5.1.662 56.112 59.119 6.1.667 67 .."18(1
.17 22.078 2.1.166 2-1.8.16 2«\7~ 2:X . .253 31-6-10 JJ.:no 35.572
II 38 22.S6--t 23.97.1 25.689 27.152 29.166 3-1.351 36.6.13
7i 5fl.091 5.'1.55:-: 57.(lJJ 60_0S2 65,(180 6S.53~
...::r 39 24."185 16.53-1 28.129 30.URI .13.609 "37.715
72 5{).~"I;1 S~.71 H 5.'iA5:'l 57.956 61.0.,5 66.69-1 69.57S 7.1.-167
n 51.791)
\\ .10 2-1.-t...f-t 25.599 27.3S2 29.007 30_997 3:1.596 38.787
5.1.WO 56 ..15-1 5S.:-0<; 6l.lJ90 67.70~ 70.624 74.55S
7"'1 5:1.654 5.J.463 57.253 59.Sm 62_945 Mt72:.? 71.671 75.6-19
"I 25.2.'9 16.416 2~.2J2 29.S~S 3l.lJ I (J 35.5~-! ::17.--121 .W.SIlI
75 5:UII 5.'d37 5R.153 60.727 6.1.900 09.738 71.7J S 76.741
26.037 27.2:35 29.085 30.771 32.8.1(1 36.57-! .IO.l)J6
------------- 76 54.3Ml 56.21 J Y).054 61.653 6.1.857 70.75.1 73.765 77J-:J3
43 2o.R':;7 28.057 21).9-10 31.6% JJ.7:'iS :17_565 .19 .. 17:' 42.011
77 55.2:17 57.087 59.956 62.579 65.814 7/.769 74.S 13 78.n5
44 27.641 28.R81 30.797 32.5.13 34.6~2 3:-1.557 40_501 H08S 7S 56.087 57.96:1- 60.859 63_506 66.771 72.786 7:5.861 30.01fl
45 28--1-.47 29.708 :'1.656 33.432 35.607 )9.550 41_519
--~--~--_._---~--_._----------- 79 56.9:~S 5~Uq2 61.763 MA3.J 67.729 73.S03 76.909 8Ll lO
46 :29_255 30.538 32.517 3.1.322 36.53.1 .:lO.Sol:, 42.559 "15.243
--_._------------~-_.---_._._------~------- 57_gift 59.720
65.363
------~-~--~-----------_._------~.-_. 61'1.683 74.~2t'} 77.958 82.:::03
47 30'<)(;6 31.3G9 :n.JSI 35.215 37.462 ,11.540 ..i3.590 .16.322
-----------~-------~--------- 81 5X.67J 6O,(l1")O
------~-----_._--- (13,573 66.292 69.6-l7 75.B38 79.007 1'3.297
'18 30,S?9 ':i1.2OJ 3-.1.2.1(; :\(..IW~ 38 . .192 42.5:\7 -4-1.621 47AIlI
82 59.537 61AlHJ 6.IA7lJ 67.222 70.607 76.856
I 49 31_69-1 33.039 35.113 37.004 -~32-.1--~~1~_~-
..
~-~":Ail ---~--~------- 80.057 84.3\)(}

II --50-----.1-2.~~-5-,2-- 3J.f)7(1 35.9)\2 :n.901 <-1

[).:255 4:1.5.13 4(i.6S7 '-19.5(~
S3
g.j
()0.403 62.362 65.386 MU 52: 71.56~ 77.874 g 1.106 85.48'
fll.26R 63.244 66.29-1 69.084 72.529 7R_893 S2.156 R6.57S
--51------.-3.'-.-)-,-J ~----J4-.7~16 JR. SOD 41. 1XI) 45.532 47.721 SO MJ
I 52
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3-1.153
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36_852
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39.700 42.12,1 '!(l.53J -IS.755 51.726
85 6~.IJ5
---~-------------_._-------- 70.0J6
(d_ll7 67.202 73.490 79.Y/2 83.207 'i:>7.671
~----- --_. ---~-----_.._-- ----- ----------_._- R6 IlJ.OO.l (J5.011 68.111 70.94:-; 74,452 80.932 84.258 SR.766
'-5-3--- - _~-3_.1.~~-7-~7
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116.7X2 69.(JJ2 7:1.8[5
75.415
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Rl.952 85.309 ~9.861

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65.612 7lU;.U 73.749
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•
L-4/T -2/EEE Date: 01104/2019

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

L-4/T-2 B. Sc. Engineering Examinations 2017-2018
Sub: EEE 459 (Optoelectronics)
Full Marks: 210 Time: 3 Hours
The figures in the margin indicate full marks.
The symbols have their usual meanings. Make necessary assumptions.
USE SEPARATE SCRIPTS FOR EACH SECTION
SECTION-A
There are FOUR questions in this section. Answer any THREE.

1. (a) Discuss basic transitions in semiconductors. Draw absorption coefficient near and above
the fundamental absorption edge for Si and GaAs materials. Also explain methodology to

estimate bandgap of direct and indirect semiconductors. (20)

(b) What is Johnson noise? Derive the expression for NEP of a photodiode. Calculate noise
current for a bandwidth of 900 MHz of an InGaAs APD with x '" 0.8 which is biased to

operate at M = O. The unmultiplied dark current is 10 nA. (15)

2. (a) Discuss, with suitable diagrams, difference between circularly and elliptically polarized
light. What is the basis of electro-optic modulation? Draw a 'kerr cell phase modulator and

discuss its operation principle. (20)

(b) What is TA? Calculate the thickness of a quarter-wave quartz plate for a wave length of
600 nm. Ordinary and extra ordinary refractive indices for quartz are 1.5442 and 1.5533,

respectively. (15)

3. (a) Show transitions within an ideal four level laser systems and write rate equations. What

are the advantages of four level lasing systems to that of three level lasing systems? (20)
(b) Calculate the threshold current density and external differential quantum efficiency of a
GaAs semiconductor laser emits radiation at 850 run. Given: the transition linewidth, Iiv =

1.5 x 1013 Hz; loss coefficient, y = 3.5 X 103 m-\ R] = R, = 0.32 (cleared ends); dimensions, I ~

300 J.lm,d = 2 J.lm;and internal quantum efficiency, n; '" 1. (15)

4. (a) Discuss, with necessary diagrams, Mode hops in the output spectrum of a single mode,
restricted mode and multimode laser diodes. Define slope efficiency and explain its

significance. (15)
~.~.

(b) What are the typical methods to obtain single mode output spectrum from a laser? -
Explain operation principle of DFB laser. (10)
(c) Consider an InGaAsP DFB laser operates at 1500 nm. Suppose that the effective
refractive index is 3.5 and the cavity length is 50 J.lm.What should be the corrugation period
for a first-order grating and how many corrugations are needed for a first-order grating? (10)
Contd P/2
EEE459
SECTION-B
There are FOUR questions in this Section. Answer any THREE.

5. (a) Draw the schematic and energy band diagram of a separate absorption and multiplication
avalanche photodiode. Show the electric field distribution in this structure and mention its

advantages over a reach-through avalanche photodiode. (13)

(b) The bandgap of the active region ofa LED is 1.35 eY, which changes with temperature at
a rate of -2.5 x 10-4 eY K-1• Because of thermal broadening, distribution of carrier
concentration in the conduction band of the material peaks at 0.25 kBT above the conduction
band edge, and in the valence band the distribution peaks at 0.5 kBT energy below the valence
band edge.
Calculate the following: (12)
(i) Peak emission wavelength of the LED at 300 K
(ii) Neglecting thermal broadening, calculate the change of emitted wavelength if the
operating temperature is increased by 20°C.
(c) What is the reason behind using anti-reflection coating In solar cells? Suggest an
alternative to this coating to improve solar cell performance. (10)

6. (a) Consider two LED devices: Device I is an AIGaAs/GaAs multi-quantum well LED
device, whereas Device 2 is a single-quantum well LED having the same heterostructure as
Device I. In both these devices, electron and hole effective masses of GaAs are 0.07mo and
0.5mo respectively. The bandgap of GaAs is 1.4 eY and the AIGaAs barrier material has a
bandgap of 1.8 eY. The thickness of the quantum wells are kept fixed at 8 nm in these
devices . (20)
.(i) Calculate the emission wavelength resulting from radiative recombination between the
first electronic state and first hole state in Device!. Do you expect the same emission
wavelength from Device 2? On the same plot, draw the emission spectrum of these of
devices.
(ii) From which device do you expect higher output power? Why? On the same plot show
the light vs. input current characteristics of both devices.
(iii) Suppose for Device 2, in addition to the emission from quantum well, there is also
emission from the band edges of GaAs and AlGaAs. Calculate the emission wavelengths
in this case and show the resulting emission spectrum.
(b) State and explain Ramo's theorem in the context of external photocurrent In a
photoconductive detector. What is the speed-limiting factor of this device? (15)

7. (a) Draw the equivalent circuit diagram of a practical solar cell and show the effect of series
and shunt resistances on its I-Y characteristics. What are the underlying reasons behind non-
zero series resistance and finite shunt-resistance of practical solar cells? Suggest techniques

of improving these characteristics. (13)

Contd .. P/3
•

EEE 459
Coutd ... Q. NO.7
(b) What are the advantages of an edge-emitting LED over a surface-emitting LED?

Schematically show techniques of coupling edge-emitting LEOs to optical fibers. (12)

(c) An avalanche photodiode has a quantum efficiency of 70% at 1.3 /-lm in the absence of
multiplication. Calculate the photocurrent if the incident optical power is IOn Wand the
device is biased to operate with a multiplication factor of 20. Also calculate the responsivity

of the device under this condition. (10)

8. (a) Draw representative hertostrucutres and corresponding energy band diagrams of multi-

quantum well, double heterojunction and homojunction LEOs. Among these three devices: (18)
(i) Which one is expected to have the largest emission linewidth? Explain why.
(ii) Which one will have the best optical an electrical confinement? Justify your answer.
(b)A solar cell operating at 300 K temperature under an illumination of 500 Wm -2 has a short
circuit current of 15 rnA and an open circuit voltage of 0.5 V. The bandgap of the solar cell

material is 1.5 eV. (12)

(i) What are the short circuit current and open circuit voltage of the device if light
intensity is tripled?
(ii) Suppose after several hours of operation under the mentioned illumination, the
temperature of the solar cell increases by 15°C, Calculate the open circuit voltage and
short circuit current under this condition.
(c) On the same plot draw the responsivity vs. wavelength curve for an ideal Si photodiode

and a typical commercial Si photodiode. (5)

L-4ff -2/EEE Date: 07/04/2019

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

L-4/T -2 B. Sc. Engineering Examinations 2017-2018
Sub: EEE 441 (Telecommunication Engineering)
Full Marks: 210 Time: 3 Hours
USE SEPARATE SCRIPTS FOR EACH SECTION
The figures in the margin indicate full marks.
SECTION-A

There are FOUR questions in this section. Answer any THREE.

Answer in brief and to the point.

I. (a) Name the transducers used in a telephone hand-set. Describe, with a neat sketch, the basic
operation of a carbon microphone used in a telephone hand-set. Also describe the technique

of isolating the dc part from the speech signal in a telephone hand-set. (2+7+3=12)
(b) What is cross-talk? With a simplified diagram, explain how it occurs in the local loops of
a central-battery telephone exchange. Also explain how it can be minimized usmg a

transmission bridge. (5+6=11)

(c) Answer the following short questions: (3x4=12)

(i) What purposes does a telephone exchange serve?
(ii) Why is the positive terminal of a central battery connected to the ground?
(iii) Why does long distance analog communication required 4 wires, whereas we can use
2 wires in local loops?
(iv) Draw the busy tone, and show the corresponding On- and OFF-times. Also mention
the frequency of the tone.

2. (a) Using a single line diagram, show the various types of switching system. Mention the

requirements of a good switching system. (4+4=8)

(b) Name the 4 basic components of a Strowger switching system between the two
subscribers. With appropriate diagrams, describe the difference in operation between the
selector hunter (SH) - based access and the line finder (LF) - based access of the pre-selector

stage. (3+9=12)
(c) Suppose that in a 10,000-line Strowger telephone exchange, you are dialing your friend's
telephone number (5342) from your home telephone (4798). Draw the corresponding dial
pulses (include make and break pulses, and the inter-digit gap), and the corresponding

trunking diagram when the connection is established. (5+10=15)

3. (a) What is the basic function of a switch? Name the components that are used to make an
analog switch and a digital switch. How can we increase the utilization efficiency of a cross-

point and how can we avoid blocking? (5+5=10)

Contd P/2
 =2=

EEE 441
Coold ... Q. No.3
(b) Write down the formula for the number of cross-points required in a single stage non-
blocking switch and also for the minimum number of cross-points required in a three-stage
non-blocking switch. Then compute the number of cross-points required for N = 128 and
N = 8192 for each type of the switches, and comment on the results. How can we still reduce
the required number of cross-points to make the size of the telephone exchange more

realistic? (9+4=13)
(c) With a neat diagram, describe the operation of a digital memory switch. Consider the use
of 60-ns memory (RAM). How many full-duplex channels, C, and connections (pair of

subscribers) can the memory switch support in an 8-kHz sampled voice signal? (8+4=12)

4. (a) Why is time switching required in a digital TDM system in addition to space switching? (6)
(b) With a neat sketch, describe the operation of an STS switch. (12)
(c) What is meant by the implementation complexity of a digital switch? Assuming the space
switches are single-stage arrays, determine the implementation complexity of a 2048-channel
STS switch implemented for 16 TDM links (physical lines) with 128 channels on each link.

Comment on when to use an STS switch and when a TST one. (3+9+5=17)

SECTION -8

There are FOUR questions in this Section. Answer any THREE.

Answer in brief and to the point. Make reasonable assumptions on any missing information.
Symbols have their usual meanings.

5. (a) What are the two types of virtual connections used in ATM networks? Discuss their

relative advantages and disadvantages. (8)

(b) Draw a diagram showing the logical layers of ATM networks. Then, with the necessary

diagram, briefly discuss the AALI protocol of the ATM adaptation layer. (10)
(c) What is the purpose of using signaling protocols in VoIP system? Draw the H.323

protocol suite and briefly discuss its various components. (10)

(d) Explain why RTP is used in VoIP systems. (7)

6. (a) In a GSM system, suppose mobile station (MS) A wants to call MS B. Assume that MS A
and B are registered with two different HLRs and currently, they are under the coverage of
two different VLRs. With necessary diagram, briefly explain the steps for establishing

connection between MS A and B. (10)

(b) Consider a cellular network with hexagonal layout of 7-cell clusters and a path - loss
exponent = 4. Total number of cells and channels in the network are 350 and 140,

respectively. (18)
Cootd P/3
 =3=

EEE 441
Coutd ... Q. No. 6(h)
(i) Calculate the carrier-to-interference-ratio (CIR) in dB at a mobile station (MS)
considering interference from the first interfering tier. (ii) Repeat part (i) considering
interference from both the first and the second interfering tiers. (ii) If we now want CIR
10 dB better than that is found in part (i), determine the required cluster size.
(iv) Calculate the capacity of the network found in part (iii). Assume that the MS is
equidistant from all the cells in an interfering tier.

(c) Write a short note on the LAPD protocol used in ISDN. (7)

7. (a) Briefly explain the main differences between lost calls returned (LCR) and lost calls held
(LCH) traffic models. Also mention the type of applications for which these two models are

suitable. (10)
(b) A PABX system with infinite queue has 4 outgoing trunks to server users. It receives 100
call per hour with an average call holding time of 90 seconds. The call arrival process in
Poisson. Calculate the - (i) percentage of calls those don't need to be put in queue,
(ii) average delay, and (iii) carried traffic of the system. If a call is assumed lost after waiting

for 60 seconds in the queue, calculate the percentage of lost calls. (13)
Given: . ~ ..
. C(N,A)=P(k=N) = N

I
k= 0

CDt of waiting time W in queue:

P(W ~x) =l-C(N.A)_N_.eXP[-(N -A)Jlx]

N-A
Mean waiting time in queue:

E[W]=j"' xP(W = x)Jx = C(N.A)N

o Jl(N-A)2

(c) In a cellular network, there are 400 users with 25 channels allocated for each cell. Each
user makes a voice call at a rate of 1.5 calls/hour with an average call holding time of 120
seconds. Calculate the - (i) call blocking probability, (ii) trunk occupancies, (iii) probability
that at least one trunk is free, (iv) number of additional channels required to reduce the call
blocking to I%. Assume that the call arrival process is Poisson and the network uses a lost

call cleared (LCC) traffic model. Use the Erlang B graph given in Fig. for Q. No. 7(c). (12)

8. (a) What are the subsystems in the space segment of a satellite system? Briefly discuss

various components and functions of the telemetry, tracking and command subsystems. (8)
Contd P/4
 •
•
=4=

EEE 441
Coutd ... Q. No.8
(b) Draw a detail diagram of a satellite transparent transponder. Discuss why an input

demultiplexer is used in such transponder. (10)

(c) Consider the downlink of a GEO communication satellite system with the following
parameters: Distance between the satellite and the earth station = 35,786 km, elevation angle
= 5°, frequency band = C band, carrier frequency = 4 GHz, transponder bandwidth
= 36 MHz, satellite downlink antenna diameter = 4 m, and aperture efficiency = 0.55, RF
output power = 300 W, satellite pointing loss = I dB, gaseous absorption loss = 0.5 dB, rain
attenuation = ~ dB, Sky noise = 28 oK, loss due to ground reflection and feeder = 4 dB, earth

station receive antenna gain = 40 dB, receiver equivalent noise temperature = 55°K,

Calculate (i) EIRP m dBW, (ii) system nOIse temperature m oK,

(iii) received CIN in dB, (iv) received ClNo in dB (ratio over I Hz of bandwidth). (17)

Probability of Blocking
p o o
8 ~ i3

z
C
B
0'
•
"
o
~

,."
•
o
o
•
~
•
"

•
••
•
. . •
.. , . .~
.........
. ......
. _
" ... " -' ..

.
•~
....
.
,'
.
', ,
......
.~ ,
,

. t
•
•
;

..... ~ ' .' .

.....
. ~ . t

~ . .. ........ .; : ;..; ..: . .

'.

•
I
•
., /
.
lj
'"'; ~_~._ :',','.~~'_~;;:_c;~-''',.,'
Fig. for Q. No. 7( C).~~ .,.",~~;"
.---_ ~. --:--0'-'---_. ~ .... __ .•

----------------~--------~----------_. __ ._-----------------~-------
,

L-4/T-2/EEE Date: 07/04/2019

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

L-4/T-2 B. Sc. Engineering Examinations 2017-2018

Sub: EEE 481 (Power System Operation and Control)

Full Marks: 210 Time: 3 Hours
The figures in the margin indicate full marks.
All the symbols and abbreviations have their usual meaning.
USE SEPARATE SCRIPTS FOR EACH SECTION
SECTION-A

There are FOUR questions in this section. Answer any THREE.

1. (a) What will happen during operation of a power system if the actual demand exceeds the

forecasted demand? Explain the control actions that would be suitable for the situation? (4+10)
(b) Discuss the main differences between a traditional power grid and a smart grid? What are
the main barriers towards transforming the Bangladesh power system (specially the

distribution sector) into a smart one? (4+5)

(c) Explain with examples the put, call, no cost collar and swap options for a power

marketer. (12)

2. (a) The one hour ahead on-line offers received from three GenCos and the bids received from

two DisCos for the spot market for II am on a certain day by the ISO are as in the Table. (18)
Table for Q. 2{a)
OtTers GeoCo 1 .GeoCo 2 Geoco 3 Bids DisCo 1 DisCo 2
Block 1 2 3 1 2 3 I 2 3 Block 1 2 3 4 1 2 3 4
Power Power
5 12 13 8 8 9 10 10 5 13 10 10 8 12 9 9 8
MW MW
Price Price
1 3 3.5 4.5 5 6 8 9 10 20 15 7 5 18 16 II 5
SIMWh SIMWh

There is no constraint on the capacity of transmission lines, minimum output and ramping
rate of the generation units. Using a graph paper determine the probable MCr and prepare a
Table showing offers and bids going to be the finally accepted corresponding to this MCP.
Also calculate the social welfare for the hour. Attach the graph paper with your script.
(b) Discuss the main differences between a vertically integrated power system and an

electricity market? How can smart grid help electricity market? (5+4)
(c) What will happen if a generator is lost in the spot electricity market? How can it be

compensated? (3+5)

3. (li) Describe the steps to minimize a function f(x,u) subject to g(x,u)=O and h(x,u)~O using

gradient technique. (14)

(b) In the following system determine the power flows in each line. Using a DC OPF model
develop the framework for correcting overload applying generation adjustment and load shed
\)
Bus 5 is slack. (5+10)
Contd 1'/2

.~..
 =2=

EEE 481
Coutd ... Q. No. 3(b)

---

JVl3X
Shunt Pj
Resistance Reactance Po Qo PG QG
Susceptance (MW)
Line
Pu (PB",=IOO MYA) Node MW MYar MW MYar
i, j
LI 1-2 0.002 0.01 0.002 1000 I 2500 750 - -
L2 1-3 0.004 0.02 0.004 1000 2 300 100 - -
L3 1-4 0.002 0.01 0.002 1000 3 0 0 1300 479
L42-5 0.004 0.02 0.004 1000 4 0 0 1250 597
L5 3-4 0.004 0.02 0.004 1000 5 0 0 356 299
L64.5 0.004 0.02 0.004 1000

0.4828 -0.3448 0.4138 0.3448

250 -100 -50 -100 0.1034 0.0689 - 0.4828 - 0.0689
-100 150 0 0 0.4138 0.2759 0.0689 - 0.2759
B= Sf =
-50 0 100 -50 0.4828 0.6552 0.4138 0.3448
-100 0 -50 200 0.1034 0.0689 0.5172 - 0.0689
0.5172 0.3448 0.5862 0.6552

Fig. and data for 0.3 (b)

(c) In an OPF problem involving both preventive and corrective actions how can you ensure

that both the measures will be in solution? (6)

4. (a) Derive an expression for the generation outage sensitively matrix Sf in terms of incidence

matrix A, bus susceptance matrix B and line reactance matrix X. (13)

(b) Determine the A, X, B and Sf matrices for the following power system when generator at
bus 4 is slack. Each line has a reactance of 0.02 pu excepting lines 1-2 and 1-4 which have

reactance of 0.01 pu each. (15)

(c) How much (in %) will be the increase or decrease in the flow of line 3-4 in case the load

at bus 1 is lost? (3)

(d) How much (in %) will be the increase or decrease in the flow of line 3-4 in case the line

1-3 trips? (4)

eontd P/3

.,... ...•
 =3=
,j--- --,
EEE 481
Cootd ... O. No.4

Fig. for () 4(h)

SECTION-B

There are FOUR questions in this Section. Answer any THREE. Assume reasonable values for
any missing data

5. (a) What do you understand by "99.9% reliability/year" and "99.9999% reliability/year?

With a diagram, explain the conceptual model of real-time control of a power system. (15)
(b) Explain the roles of RTU and lED in a SCADA system. Write down the names of main

components of an EMS. (10)

(c) With a block diagram, explain the states of a power system from security point of view. (10)
6. (a) Write down the 'accept' and 'reject' criteria for three commonly used bad data detection

tests. Write down five necessary steps to identify bad data. (10)

(b) The per-unit values of the five measured quantities of the network shown below are: (25)
Z[= hi = 0.92, Z2= IVII = 1.02, z) = QI = 0.605, Z4= Pl2 = 0.598, Z5= Q21= 0.305
The variances of the measurement errors are given in per-unit as

0'12 = 0'22()22
= 0.01 ,0'3 = 0'52()2
= 0.02 and 0'42()2
= 0.015

Compute the weighted least squares estimates of the state variables.

XI= 82, X2 = hi and x) = IVII Show one iteration. Given that,

1\ 1\ 1\ 1\ 1\ 25 1\ 1\ 1\ 1\ 1\
1\ 1\ 1\]
2 ; ,e
el=zl-x2,e2=z2-x3,e3=z3- 6x3-4x3x2cosxl = z4 - - 4 x 3 x 2 sin XI '
[ 4 [

1\ 1\. 1\ 1\ 1\

and e = z - 4x2 - 4x x cos x ] .

5 5 [ 2 3 2 I

Coold P/4
•

EEE 481
Coutd ... Q. No. 6(b)

""'-,'-,
1':\\
'-\:tI'
\,1vy \ -z::.I '1)"---,.- .... --- _-"_,,-,,,-_~-~\,-l:'
\ v-t II.-!>-<I,,-"
:'~
;..

"
, ~\-, '~=---_.~
,."
..L~

-6/ 1\':'.-"-'" ------'

-.~I~---_1~'.-:J..-f------
4-1'~-1
._.

&\'l" .-"----- ---------~~\

'---
-----,-------------,
~ ~~

-~-'-~~l-~-O.-r.-:\
----'--. ,
~t

--~t>-,''5 --.----,.
I
~.-------_._--
, ,
-----

- '"

. . . f, 1>, ~ I'l So, \,(. '0)

t:========.:.--~--- ,__,_,

7, (a) The load of a power system has six stages as follows. Stage-I: 1100 MW, Stage-2: 1400
MW, Stage-3: 1600 MW, Stage-4:1800 MW. Stage-5:1400 MW and Stage-6: 1100 MW.
System load is met by four generators. The start-up cost of each generator is $3000 and the
shutdown cost is $1500. The possible combinations of the generators are shown in Table 7.1.
The production costs for various combinations are given in Table 7.2. Determine the optimal
unit commitment policy to serve six stages of load curve. Note that only unit-I and unit-2

operate at the first and final stages of the load cycle. (25)
Table 7.1: Possible unit combination
Combination
Unit No.
Xl X2 x) X4
I I I I I
2 I I I I
3 I I 0 0
4 I 0 I 0

Table 7.2: Production Cost

Production cost ($)
Combination
1100 MW 1400MW 1600 MW 1800 MW
Xl 45848 58428 70908 76472
X2 45848 59356 68976 79184
X) 44792 58236 67856 Infeasible
X4 45868 Infeasible Infeasible Infeasible

(b) Why is unit commitment needed? What are the methods of unit commitment? Briefly

explain these methods. (10)

Could PIS
 •
•
=5=

EEE 481

8. (a) Using the block diagram of two area model, derive the expression of change in the flow

(~Plic). (10)
(b) What are the four major objective of AGC? What IS ACE? Explain how ACE IS

calculated. (10)
(c) Two generators are supplying a total load of 700 MW in a 50-Hz system. Unit 1, with a
rated capacity of 600 MW and 4% speed-droop, supplies 400 MW. Unit 2, with a rated
capacity of 500 MW and 5% speed-droop, supply 300 MW. If the total load increase by 100

MW, determine the new operating frequency and loading of each units. (10)
(d) How is load modeled from frequency point of view? (5)
•

L-4fT -2/EEE Date: 07/04/2019

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

B. Sc. Engineering Examinations 20 I 7-18

Sub: EEE 461 (Semiconductor Device Theory)

Full Marks: 210 Time: 3 Hours
The figures in the margin indicate full marks.
USE SEPARATE SCRIPTS FOR EACH SECTION
........................................................ ,.

SECTION -A

There are FOUR questions in this section. Answer any THREE.

1. (a) What happens to the initial energy and momentum of an electron after it is scattered by an

optical phonon? (8)

(b) What is "selection rule" for optical transitions? Assume that you are designing an optical
detector using an infinitely deep quantum well. How should you choose the electronic states

for transitions? Explain. (15)

(c) Derive an expression for the net exchange of energy due to interactions between electron

and photon. (12)

2. (a) Why magnetic field of light is often neglected while calculating the interactions of light

with electrons? (10)

(b) Show how polarizations of incident light affects the interactions with electrons in a

quantum well. (13)

(c) Derive the expressIOn for the electron transition rate between two states due to a

harmonically oscillating perturbing p\Jtential. (12)

3. (a) How can you achieve ballistic transport in an electronic device? Give example. (10)
(b) How the mobility of Si and GaAs differs against applied electric field? Explain. (12)
(c) Discuss and compare the suitability of Si and GaAs materials for using in a laser or

optical detector. (13)

4. (a) How quantum tunneling is used to store and read data in a flash memory device? (10)
(b) Assume that the work function of a certain metal is 5 eV. Estimate the distance outside

surface of the metal at which the electron probability drops to 10-3 of that inside the metal. (12)
(c) Draw the transmission coefficient of electron particle flux through a square potential
barrier of length d when the energy of the electron varies. Also the transmission coefficient
when the barrier length is changed to 0.25d and 4d. Explain the transmission coefficient's

changes with the electron energy and the differences in the three curves.

Conld P/2
 •

•
=2=

EEE 461

SECTION -8

There are FOUR questions in this Section. Answer any THREE.

Symbols have their usual meanings.

5. (a) Derive the dispersion relation for lattice vibration in a 1-0 mono atonic lattice and obtain
the expressions of both phase and group velocity in the long wavelength limit. How your
derived relation is different from the dispersion relation of lattice vibration in a 1-0 diatomic

lattice? Briefly explain with necessary diagrams. (15)

(b) Consider a 3-D crystal having periodicity of a, band c along X-, y- and z- directions

respectively. Schematically show the following based on Kronig-Panny model: (10)

(i) Extended and reduced zone representations of energy band diagram when a = b = c.
(ii) Reduced zone representation of the energy band diagram when a, band c are unequal.
(c) How would you expect the specific heat of a material to vary if you increase temperature
from approximately 0 K to infinity? Among Classical theory, Deby theory and Einstein's
theory of specific heat, which one is most suitable for explaining this experimental

observation over the entire range of the temperature? Why? (10)

6. (a) Consider a system of equally spaced ion cores where the free electrons are only weakly
perturbed by the periodic potential. By applying first order correction to the wavefunction of
this system, derive the Bloch theorem. Also show that the first-order corrected wavefunction

satisfies free-electron model if the periodic potential is set to zero. (15)

(b) Consider a 1-0 chain of Si-atoms where the lattice vibration is characterized by an elastic
constant of 2.2 x lOs N/m. The lattice constant and mass of Si atoms are 5.43 A 0 and 28 amu

respectively where 1 amu = 1.665 x 10-27 kg. Calculate the frequency above which wave
propagation is strongly attenuated in this medium. Also calculate the distance over which a
propagating wave is attenuated if the wave's frequency is 2 times of your calculated cut-of-

frequency. (12)
(c) What is Restrahlen effcct? Do you expect to obscrve this effect both in polar and non-

polar materials? Justify your answer. (8)

7. (a) According to tight blinding model, E(k) relation in a crystal lattice is given by the

c +!coska
equation: E (k ) = & - 2 -----, where different terms have their corresponding
1 + 2scoska
meanings. With necessary assumptions, obtain the expression of the E-k relations at k"" 0 and

at k "" 7l/a for both one-and two-dimensional crystal lattices. Also graphically show your

results. (17)
eonld P/3

\
•
=3=

EEE 461
Contd. Q. NO.7

(b) Derive the density of electronic states in a solid bulk materia!. Is your derived relation

applicable to both parabolic and non-parabolic bandstructures? (10)

(c) In the context of dispersion relation of lattice vibration, show that k values of the allowed

modes are equally spaced, however the OJ values are not. (8)

8. (a) Consider a finite potential well where there are two non-degenerate bound states El and
E2 under zero applied bias. Applying perturbation theory up to second order correction,
estimate the modified energy states under a non zero applied bias of Va. What is the

limitation of your approach if the energy states were degenerate? (18)

(b) Define mean energy of a vibrational mode and show how it depends on Deby

temperature. How can one calculate the internal energy of a system from the mean energy? (9)
(c) Within parabolic approximation, differentiate between the E-k relations of Si and GaAs
with necessary expressions. How would you estimate the conductivity effective mass of

electrons in these materials? (8)

 L-4ff-21EEE Date: 16/03/2019

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

L-4ff -2 B. Sc. Engineering Examinations 2017-2018
Sub: EEE 483 (High Voltage Engineering)
Full Marks: 210 Time: 3 Hours
USE SEPARATE SCRIPTS FOR EACH SECTION
The figures in the margin indicate full marks.
The symbols have their usual meanings.
SECTION-A

There are FOUR questions in this section. Answer any THREE.

I. (a) With neat diagram, describe the working principle of Cockcroft- Walton type multiplier

circuit arrangement for generation of HVDC. Find the ripple of this circuit. (20)
(b) Describe, with a neat sketch, the working of a Van de Graaff generator. What are the

. factors that limit the maximum voltage obtained? (15) .

2. (a) With neat sketches describe the working principle of multistage Marx impulse generator. (20)
(b) A 12-stage impulse generator has 0.126 llF condensers. The wave front and wave tail
resistances connected are 800 ohm and 5000 ohm respectively. If the load condenser is 1000

pF, find the front and tail times of the impulse wave produced. (15)
,
3. (a) What is meant by insulation co-ordination? How are the protective devices chosen for

optimal insulation level in a power system? (18)

(b) What is a surge diverter? Explain its function as a shunt protective device. (17)

4. (a) Explain how a sphere gap can be used to measure the peak value of voltages. What are

the parameters and factors 'that influence such voltage measurement? (17)
(b) Explain the principle and constructing of an electrostatic voltmeter for very high voltages.

What are its merits and demerits for high voltage a.c. measurements? (18)

SECTION-B

There are FOUR questions in this Section. Answer any THREE.

5. (a) Explain the Streamer theory of breakdown in air at atmospheric pressure. (20)
(b) Define Townsend's first and second ionization coefficients. In an experiment in a certain
gas, it was found that the steady state current is 5.5 x 10-8 A at 8 kV at a distance of 0.4 em
between the plane electrodes. Keeping the field constant and reducing the distance to 0.1 em

results in a current of 5.5 x 10-9 A. Calculate Townsend's primary ionization coefficient. (15)
Contd P/2
 =2=

EEE 483
6. (a) What are electronegative gases? Why is the break down strength higher in these gases

compared to that in other gases? Derive the criterion for breakdown in electronegative gases. (18)
(b) What is corona discharge? What are its main disadvantages? Define corona inception

field. (7)
(c) Explain electromechanical breakdown mechanism for solid dialectics. (10)

7. (a) What are the factors that influence breakdown III pure liquid dielectrics and III

commercial dielectrics. (10)

(b) Explain in brief the vanous theories that explain breakdown III commercial liquid

dielectrics. (25)

8. (a) Explain thermal breakdown mechanism in solid dielectrics. Why is it practically more

significance than other mechanism? (20)

(b) A solid dielectric specimen of dielectric constant 4.0 shown in the Fig. for Q. 8(b) has an
internal void of thickness l.l mm. The specimen is I em thick and is subjected to a voltage
of90 kV (rms). If the void is filled with air and the breakdown strength of air can be taken as

30 kV (peak)/cm, find the voltage at which internal discharge can occur. (15)

if
90 l..1mm
1'\
kV lcm
(nus)
~
L
Fig. forQ. 8(b)

---'---
 ,.

Date: 16/03/2019
L-4ff -2/EEE
BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

L-4ff-2 B. Sc. Engineering Examinations 2017-2018

Sub: EEE 437 (Digital Communication)

Full Marks: 210 Time: 3 Hours

The figures in the margin indicate full marks.

All symbols have their usual meanings.

USE SEPARATE SCRIPTS FOR EACH SECTION

SECTION-A

There are FOUR questions in this Section. Answer any THREE.

I. (a) A linear receiver structure for typical binary polar signaling is shown in Fig. for Q. No.
1(a). Derive the best receiver filter, h(t) and the corresponding sampling instant, tm to
(18)
minimize BER ofthe system.

(b) Show that the BER for BFSK system is Pb = Q(~1.2~ Eb ).

(17)

2. (a) Write down the general equations of signals for 16-ary PSK. Determine the orthonormal

basis functions for the signals using Gram-Schmidt orthogonalization procedure. (18)

(b) A 16-pint QAM signal configuration is shown in Fig. for Q. No. 2(b). Sketch the decision
regions assuming that all symbols are equiprobable and AWGN channel. Also, determine the

error probability PeM as a function of Eb of the optimum receiver.

(17)

3. (a) A five signal configuration is shown in Fig. for Q. No. 3(a). Sketch the decision regions
assuming that all symbols are equiprobable and AWGN channel. Also, determine the error

probability PeM as a function of E of the optimum receiver.

(18)

12
(b) Consider an AWGN channel with noise level N = 10- WIth. A user signal is binary
modulated with data rate 20 kbps occupying a bandwidth of 20 kHz. The received signal
power is -20 dBm. An enemy has a jamming source that can jam either a narrouband or a
broadband signal. The jamming power is finite such that the local received jamming signal
power is at most -30 dBm. Assuming a spreading factor L = 20, determine the improvement
(17)
of signal to noise ratio for the FHSS system under jamming.

4. (a) Draw and briefly explain the block diagram of a multiuser CDMA system based on
DSSS. Derive the decision variable of the j'h receiver assuming that each receiving end is a
(18)
single user optimum receiver.
Contd P/2

I,.
 =2=

EEE437
Could ... Q. No.4

(b) State the advantages and disadvantages of decorrelator MUD receiver. Also show that

MMSE MUD receiver in essentially the decorrelator receiver. (17)

..-.•.....••.. Decision
"p(l) + nq) H(J)
"PO(t)-+ nOW .'1:... t~ Thl<:shold
W) device

p(l) + "V)
t

(-

~
t d
•• ••
0
•• ~et~ 2
.~

• 0 .• i
d
2
•• • • • ipl-
• •
• • •• •• I
I
;r--I,~,

I
F , jar. &. NO, 2(bJ
I
I
d

Could P/3
 =3=

EEE437
SECTION -B

There are FOUR questions in this Section. Answer any THREE.

5. (a) Explain the Nyquist's first criterion for zero inter symbol interference (lSI). Show that the
bandwidth requirement for a baseband signal with data rate Rb is kRtl2 (I :5 k :5 2) for a

decay rate of the baseband signal to be i-.

t
(20)

(b) The Fourier transform of a pulse p(t) is given as (15)

P (I)
=
0.01(I-JLL)if
100
-100:5 I :5100

1o otherwise

(i) From the shape of P(/), explain whether the pulse satisfies the first Nyquist's criterion.

(ii) Determine p(t) and verify the result in (i).

(iii) If the pulse does satisfy the first Nyquist's criterion, what is the transmission rate in

bps and what is the roll-off factor?

6. (a) Draw the typical baseband signal for the bit sequence "1011010110" with bi-polar AMI

and B8ZS line codes. (8)

(b) In a communication system, a baseband signal generator uses binary data input and the
generated baseband signal is then modulated by using a modulator. The data rate is I Mbps.
Base band signal generator uses full width pulses and polar signalling. Determine the
bandwidth of the modulated signal for the following modulation schemes, (i) BPSK and

(ii) FSK with lei - leo = 100 kHz. Also determine the bandwidth for the above modulation

schemes, if Nyquist's first criterion pulses with roll-off factor 0.5 are used. (15)

(c) Suppose a source has 8 symbols {a, b, c, d, e, f, g, h}. The probabilities of these symbols
are Pea) = 0.05, PCb) = 0.1, P(c) = 0.125, P(d) = 0.2, Pee) = 0.125, P(t) = 0.1, P(g)=0.25,
P(h) = 0.05. The sampling frequency of the source is 12 kHz. Determine the data rate and the

coding efficiency under Huffman coding. (12)

7. (a) Two binary random variables X and Yare distributed according to the joint distributions:
P(X=Y=0)=0.125, P(X=Y=I)=O.l25, P(X=O,Y=1 )=0.25, P(X=I,Y=0)=0.5. Compute

H(XIY), H(Y IX) and H(X, Y). (15)

Cootd P/4
 =4=

EEE 437

(b) Consider the generation matrix for a (7, 4) linear block coding as

I 1 1 1 0 0 0
0 I 1 0 1 0 0
G=
1 0 I 0 0 1 0
I 1 0 0 0 0 I

The received codeword'sequence is found as r = [0 1 1 0 I 0 OJ for a transmitted message

signal. Determine the received codeword and the message signal after error corrections. For
the linear block coding in Q, 7(b), determine the bit error probability of the decoded message
5
if the bit error rate due to the channel is 10- . (20)

8. (a) For the convolutional encoder shown in Fig. for Q. 8(a), draw the Trellis diagram. By
using Viterbi algorithm, determine the decoded bit sequence if the received codeword is
(20)
"10011010".

(b) For the TCM system shown in Fig. for Q. 8(b), draw the typical TCM signal S(I) for the
(15)
bit sequence "10010011".

..-. ----
. -- -------.-----

I,

----------~-------------------------------------------~----
\

L-4ff -2/EEE Date: 16/03/2019

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

L-4ff-2 B. Sc. Engineering Examinations 2017-2018

Sub: EEE 457 (VLSI II)

Full Marks: 2I0 Time: 3 Hours

The figures in the margin indicate full marks.

USE SEPARATE SCRIPTS FOR EACH SECTION

SECTION-A

There are FOUR questions in this Section. Answer any THREE.

I. (a) For each of the following sequencing styles, determine the maximum logic propagation
delay available within a 500 ps clock style. Assume there is zero clock skew and no time

borrowing takes place. (20)

(i) Flip flops

(ii) Two phase transparent latches
(iii) Pulsed latches with 80 ps pulse width. Use the data in Table for Q. I(a).
Table for Q. 1 a
Set-up Clk-to-Q D-to-Q Contamination Hold
time dela dela dela time
Fli -flo 65 s 50 s N/A 35 30 s
Latches 25 s 50 s 40 s 35 30 s

(b) Draw the schematic diagram of a flip-flop with synchronous reset and explain its

operation briefly. (15)

2. (a) Consider an 8-bit Kogge-stone recursive solver adder. Show a schematic diagram of the
adder. Write the Boolean equation and draw the circuit diagram of each of the subsystem of
the schematic diagram. Show the value of 'the P and G signal in each of the steps if the 8 bit
operands are A = [J 0 10 I011] and B = [100 II 00 I] and hence show the final SUM output

symbols have their usual meanings. (20)

(b) Draw the schematic diagram of a carry skip adder and using the concept of carry generate
and propagate, explain briefly how the adder works. Write the equation of delay for such an

~~ (1~

3. (a) Draw the block diagram of a 4 x 4 rectangular array multiplier and show the basic building

blocks. Indicate where you can use CSA adders and briefly explain how CSA adders work. (18)

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EEE 457
Co'otd ... Q. NO.3

(b) Multiply IOlOx (-1410) using Radix-4 modified Booth encoding. Take 5 bits for both multiplicand
and multiplier and 10 bits for each partial product. From the truth table of Radix-4 modified Booth

encoding, design a Booth encoder and selector circuit. (17)

4. (a) How many address pins are there in a second generation 4k DRAM? How are the row addresses

and column addresses latched in the appropriate row and column lines? (10)

(b) With a neat diagram explain how memory is divided in rows, blocks and columns. What are the

advantages of u'sing block selectors? (10)

(c) Design the architecture of a 4 by 4 bit NOR ROM which stores the data mentioned in the Table

for Q. 4(c). (15)

Table for Q. 4(c)

1 2 3 4
~ Row no.
I I .
0 0 I
2 0 I 0 1
3 1 0 1 0
4 0 I 0 0

SECTION-B

There are FOUR questions in this Section. Answer any THREE.

The symbols and acronyms have their usual meanings. If any question has missing data, make
necessary assumptions.

5. (a) Derive an expression of fifty percent delay if optimal repeaters are used for improving

wire delay. Compare the result with the improvement achieved with minimum size repeaters.

Show the details of your calculations. (18)

(b) Discuss the Dennard scaling principle and explain why it is also called the constant field

scaling rule. If this principle is followed by silicon devices in a CMOS technology, calculate

the scanning rules of device gate capacitance and power dissipation density. (17)

6. (a) Discuss the Elmore delay model and explain its significance. Give an example of how this

model could be used in the calculation of propagation delays of a logic gate. (15)

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EEE 457
Could ... Q. NO.6

(b) The figure for Q. 6(b) shows a multistage logic network built with different types oflogic
gates. The size of the gates and components is also mentioned in the figure. For this
multistage network, compare the minimum delay of the path from A to B with that of a F04

inverter. Also, choose transistor sizes to achieve this delay minimization. (20)
,, '.
,

'.
--~-----

-~~--~'.

7. (a) Write the expression for total power dissipation of an integrated circuit including all
categories of dynamic and static components. Explain different types of leakage power
components and explain their relative significance in determining the performance of the

overall network. (17)

(b) A digital system-on-a-chip in a 0.9 v 65 urn process has 0.8 billion transistors, of which
90 million are in logic gates and the remainder in memory arrays. The average logic
transistor width is 12 Ie and the average memory transistor width is 4 Ie. The memory arrays
are divided into banks and only the necessary bank is activated so the memory activity factor
is 0.03. Assume each transistor contributes 0.8 iF/f!m of gate capacitance and 0.5 iF/f!m of
diffusion capacitance. Sub-threshold leakage is 80 nAlf!m for low-threshold devices and

8 nAlf!m for high-threshold devices. Gate leakage is 4 nA/f!m and the system clock
frequency is 1.2 GHz. Memories uses low-leakage devices everywhere. Logic uses low-
leakage devices in all but 6% of the paths that are most critical for performance. Estimate the

chip's static power consumption. State necessary assumptions for the calculation. (18)

8. (a) Write short notes on the following topics related to a CMOS process flow: Boron Implant,

STI, Via. Discuss about the role of tungsten plug in an advanced process flow. (18)

(b) With examples, show how the use of high-k and low-k dielectrics can assist in CMOS
process enhancement. Use the dual-rail domino logic with a clocked evaluation transistor to

realize the XOR function. (17)

 "

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L-4rr -21EEE Date: 16/03/2019

BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY, DHAKA

L-4/T-2 B, Sc, Engineering Examinations 2017-2018

Sub: EEE 477 (Power System Protection)

Full Marks: 210 Time: 3 Hours

The figures in the margin indicate full marks,

USE SEPARATE SCRIPTS FOR EACH SECTION

SECTION-A

There are FOUR questions in this Section, Answer any THREE.

I. (a) Name some of the relay actuating quantities, Explain how these quantities may be used in

detecting faults. (12)

(b) With a neat diagram briefly explain duplicate primary, local backup, and remote backup

in power system protection. (8)

(c) Consider the protection system shown in figure below. Comment on the operation of the

circuit breakers for faults at FI, F2, and F3, respectively. (7)

'- ..

r---------------------
, F• 1 821 ,
---., j
{""-------------------- I
1 I 8.
4 •
'.'
I

I .
'~
I
I-

~~---------------- I---- -------------1t~

i 8 I
~_~
Fig, for 0 ICc)
I
c--\

(d) Define and explain with examples "dependability" and "security" in relation to protective

relaying. (8)

2. (a) What is ratio-correction factor of a CT? Why is it always greater than I.O? (10)

(b) Discuss the transient performance of a CT (15)

(c) Consider a CT with a turns ratio of 500 : 5, a secondary leakage impedance of (0.01 + j
0.1) Q, and a resistive burden of 2,0 Q. The magnetizing impedance is (4.0 + j 15) Q.

Calculate per unit CT error and the ratio correction factor. (10) ,

3, (a) Explain the working principle of current-current type directional induction relays. (12)

(b) Briefly discuss field winding faults in synchronous generator. (8)

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EEE477
Conld ... Q. No.3

(c) Sketch the percentage-differential relaying scheme for a wye-connected generator. (5)

(d) An II kV, 5000 kVA generator is provided with restricted earth-fault protection. The
percentage of winding protected against phase to ground fault is 80%. The relay setting is
such that it trips for 25% out of balance. Calculate the resistance in neutral to ground

connection. (10)

4. (a) Explain why the interruption offault current at zero power-factor lagging is more difficult

for a circuit breaker than the interruption ofload current at 0.8 power-factor lag. (6)

(b) With a neat sketch describe how the puffer type SF6 circuit breaker works. (7)

(c) With necessary sketches explain resistance switching in air blast circuit breaker (ABCB). (11)

(d) With necessary derivation show that circuit with high natural frequency gives a high rate

ofrise ofTRV. (11)

SECTION-B

There are FOUR questions in this Section. Answer any THREE.

5. (a) Describe the principle of percentage differential protection system applied to a delta-star

connected transformer. (10)

(b) Explain inrush current and incipient faults in transformer. What are the causes for false

trip in the differential protection of a transformer? (5+5)

(c) Explain the principle of operation, installation guidelines, and limitations of the Buchholz

relay. (15)

6. (a) What are the situations where DTOC relays are preferred over IDMT relays? (5)

(b) Distinguish between unit protection and non-unit protection. What are the various

methods of protecting a transmission line by unit and non-unit protection? (5+5)

(c) Write short notes on (i) earth fault protection of transformer, and (ii) protection of parallel

transformers. (5+5)

(d) Explain the principle of percentage differential relay with harmonic restraint. (10)

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EEE477
7. (a) Explain the effect of arc resistance on reach of simple impedance relay and mho, relay. (5+5)

(b) Explain the principle of the following units used in carrier current relaying employed for
transmission line protection: (i) line trap unit, (ii) coupling unit, (iii) transmitter unit, and (iv)

receiver unit. (3x4)

(c) Describe with the help of neat sketches the graded time lag overcurrent protection of a
radial feeder. What are the disadvantages of graded time lag overcurrent relaying for

transmission line protection? (8+5)

8. (a) What are the causes of bus zone faults? (5)

(b) Explain the principle of high impedance differential scheme based on voltage drop for

bus zone protection. (10)

(c) Describe the interlocked overcurrent protection between generator and bus bar. Explain

its necessity. (10)

(d) Using universal torque equation, derive the trip law for reactance relay used for

transmission line protection. (10)