CMPA2060035F1

35 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier

Description
The CMPA2060035F1 is a gallium nitride (GaN) high electron
mobility transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift velocity
and higher thermal conductivity. GaN HEMTs also offer greater power
density and wider bandwidths compared to Si and GaAs transistors. This
MMIC contains a two-stage 50-ohm matched amplifier, enabling very wide
Package Types: 440219
bandwidths to be achieved, in a small 0.5” square, screw-down package. PN’s: CMPA2060035F1

Features Applications
• >30% typical power added • Civil and military pulsed radar
efficiency amplifiers 1

• 30 dB small signal gain • Test instrumentation 4

• 36 W typical PSAT • Electronic warfare jamming 2 5

• Operation up to 28 V
•
6
High breakdown voltage 3

• High temperature operation

Note:
Features represent typical performance across multiple frequencies under 25 °C
operation. Please reference the performance charts for additional details.

Typical Performance Over 2.0 - 6.0 GHz (TC = 25 °C)

Parameter 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units
Small Signal Gain1,2 30.0 29.4 30.4 32.0 27.5 dB
Output Power1,3 45.6 46.2 45.7 46.2 44.4 dBm

Power Gain1,3 23.6 24.2 23.7 24.2 22.4 dB

Power Added Efficiency1,3 52 48 38 35 30 %

Notes:
1
VDD = 28 V, IDQ = 1000 mA.
2
Measured at PIN = -20 dBm.
3
Measured at PIN = 22 dBm and CW.

1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
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CMPA2060035F1

Absolute Maximum Ratings (Not Simultaneous) at 25 °C

Parameter Symbol Rating Units Conditions

Drain-Source Voltage VDSS 84 VDC 25 °C
Gate-Source Voltage VGS -10, +2 VDC 25 °C
Storage Temperature TSTG -55, +150 °C
Maximum Forward Gate Current IG 16.32 mA 25 °C
Maximum Drain Current IDMAX 4.0 A
Soldering Temperature TS 260 °C

Electrical Characteristics (Frequency = 2.0 GHz to 6.0 GHz Unless Otherwise Stated; TC = 25 °C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics
Gate Threshold Voltage VGS(TH) -2.6 -2.0 -1.6 V VDS = 10 V, ID = 16.32 mA
Gate Quiescent Voltage VGS(Q) – -1.8 – VDC VDD = 28 V, IDQ = 1000 mA
Saturated Drain Current 1
IDS 16.32 19.58 – A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBD 84 – – V VGS = -8 V, ID = 16.32 mA
RF Characteristics
Small Signal Gain S211 – 30.0 – dB PIN = -20 dBm, Freq = 2.0 - 6.0 GHz
Output Power 2
POUT1 – 45.6 – dBm VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 2.0 GHz
Output Power2 POUT2 – 46.2 – dBm VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 3.0 GHz
Output Power2 POUT3 – 45.7 – dBm VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 4.0 GHz
Output Power 2
POUT4 – 46.2 – dBm VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 5.0 GHz
Output Power 2
POUT5 – 44.4 – dBm VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 6.0 GHz
Power Added Efficiency 2
PAE1 – 52 – % VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 2.0 GHz
Power Added Efficiency 2
PAE2 – 48 – % VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 3.0 GHz
Power Added Efficiency 2
PAE3 – 38 – % VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 4.0 GHz
Power Added Efficiency2 PAE4 – 35 – % VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 5.0 GHz
Power Added Efficiency2 PAE5 – 30 – % VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 6.0 GHz
Power Gain GP1 – 23.6 – dB VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 2.0 GHz
Power Gain GP2 – 24.2 – dB VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 3.0 GHz
Power Gain GP3 – 23.7 – dB VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 4.0 GHz
Power Gain GP4 – 24.2 – dB VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 5.0 GHz
Power Gain GP5 – 22.4 – dB VDD = 28 V, IDQ = 1000 mA, PIN = 22 dBm, Freq = 6.0 GHz
Input Return Loss S11 – -14 – dB PIN = -20 dBm, 2.0 - 6.0 GHz
Output Return Loss S22 – -14 – dB PIN = -20 dBm, 2.0 - 6.0 GHz
Output Mismatch Stress VSWR – – 5:1 Ψ No Damage at All Phase Angles
Notes:
1
Scaled from PCM data.
2
Performance is based on production testing at a fixed input power. To see performance where the input power is optimized for either maximum output
power or power added efficiency, see Figures 46 and 47.
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
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CMPA2060035F1

Thermal Characteristics

Parameter Symbol Rating Units Conditions

Operating Junction Temperature TJ 225 °C
Thermal Resistance, Junction to Case (Packaged) 1
RθJC 1.5 °C/W CW

Note:
1
For the CMPA2060035F1 at PDISS = 89 W.

3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, CW, PIN = 22 dBm, TBASE = +25 °C

Figure 28. – Output Power vs Frequency as a Function of Temperature

48
Figure 29. – Output Power vs Frequency as a Function of Input Power

48
47 47
46
Output Power (dBm)

Output Power (dBm)

46
45 45
44 44
43 43
42 42
41 41
85 °C 40
40 25 °C
39 39 15 dBm 17 dBm 19 dBm 21 dBm 23 dBm
-40 °C
38 38
2 3 4 5 6
2.0 3.0 4.0 5.0 6.0
Frequency (GHz) Frequency (GHz)

Figure 1. Output Power vs Frequency Figure 2. Output Power vs Frequency

as a Function of Temperature as a Function of Input Power

Figure 30. – Power Added Eff. Vs Frequency as a Function of Temperature Figure 31. – Power Added Eff. Vs Frequency as a Function of Input Power

65 65
60 60
Power Added Eff. (%)

Power Added Eff. (%)

55 55
50 50
45 45
40 40
35 35
30 30
85 °C 25
25 25 °C
20 -40 °C 20 15 dBm 17 dBm 19 dBm 21 dBm 23 dBm
15 15
2 3 4 5 6 2 3 4 5 6

Frequency (GHz) Frequency (GHz)

Figure 3. Power Added Eff. vs Frequency Figure 4. Power Added Eff. vs Frequency
as a Function of Temperature as a Function of Input Power

Figure 32. – Drain Current vs Frequency as a Function of Temperature

Figure 33. – Drain Current vs Frequency as a Function of Input Power
5 5

4 4
Drain Current (A)
Drain Current (A)

3 3

2 2
85 °C
1 25 °C 1
-40 °C 15 dBm 17 dBm 19 dBm 21 dBm 23 dBm
0
0
2 3 4 5 6
2 3 4 5 6
Frequency (GHz) Frequency (GHz)

Figure 5. Drain Current vs Frequency Figure 6. Drain Current vs Frequency

as a Function of Temperature as a Function of Input Power

4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, CW, PIN = 22 dBm, TBASE = +25 °C

Figure 34. – Output Power vs Frequency as a Function of Voltage Figure 35. – Output Power vs Frequency as a Function of IDQ

48 48
47 47
Output Power (dBm)

Output Power (dBm)

46 46
45 45
44 44
43 43
42 42 1000 mA
41 41 500 mA
28 V
40 26 V 40
39 250 mA
39 24 V
38 38
2 3 4 5 6 2 3 4 5 6

Frequency (GHz) Frequency (GHz)

Figure 7. Output Power vs Frequency Figure 8. Output Power vs Frequency

as a Function of VD as a Function of IDQ

Figure 37. – Power Added Eff. Vs Frequency as a Function of IDQ

Figure 36. – Power Added Eff. Vs Frequency as a Function of Voltage

65 65
60 60
Power Added Eff. (%)

Power Added Eff. (%)

55 55
50 50
45 45
40 40
35 35
30 30 1000 mA
28 V
25 25 500 mA
26 V
20 24 V 20 250 mA
15 15
2 3 4 5 6 2 3 4 5 6

Frequency (GHz) Frequency (GHz)

Figure 9. Power Added Eff. vs Frequency Figure 10. Power Added Eff. vs Frequency
as a Function of VD as a Function of IDQ

Figure 39. – Drain Current vs Frequency as a Function of IDQ

Figure 36. – Power Added Eff. Vs Frequency as a Function of Voltage

65 5
60
55 4
Drain Current (A)
Drain Current (A)

50
45 3
40
35 2
30 28 V 1000 mA
25 26 V 1 500 mA
20 24 V 250 mA
15 0
2 3 4 5 6 2 3 4 5 6
Frequency (GHz) Frequency (GHz)

Figure 11. Drain Current vs Frequency Figure 12. Drain Current vs Frequency
as a Function of VD as a Function of IDQ

5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, CW, PIN = 22 dBm, TBASE = +25 °C

Figure 40. – Output Power vs Input Power as a Function of Frequency Figure 41. – Power Added Eff. Vs Input Power as a Function of Frequency

50 60
45 50

Power Added Eff. (%)

Output Power (dBm)

40
40
35
30
30
2 GHz 20
25 2 GHz
4 GHz 4 GHz
20 6 GHz 10
6 GHz
15 0
-7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23
Input Power (dBm) Input Power (dBm)

Figure 13. Output Power vs Input Power Figure 14. Power Added Eff. vs Input Power
as a Function of Frequency as a Function of Frequency

Figure 42. – Large Signal Gain vs Input Power as a Function of Frequency Figure 43. – Drain Current vs Input Power as a Function of Frequency

35 5
33
31 4
Drain Current (A)

29
LS Gain (dB)

27 3
25
23 2
21 2 GHz 2 GHz
19 4 GHz 1 4 GHz
17 6 GHz 6 GHz
15 0
-7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23

Input Power (dBm) Input Power (dBm)

Figure 15. Large Signal Gain vs Input Power Figure 16. Drain Current vs Input Power
as a Function of Frequency as a Function of Frequency

Figure 45. – Output Power vs Input Power as a Function of Temperature

Figure 44. – Gate Current vs Input Power as a Function of Frequency

1.5 50
1.3 2 GHz 45
Output Power (dBm)

4 GHz
Gate Current (mA)

1.0 40
6 GHz
0.8
35
0.5
30
0.3 85 °C
25 25 °C
0.0 Frequency = 4 GHz
-0.3 20 -40 °C
-0.5 15
-7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23

Input Power (dBm) Input Power (dBm)

Figure 17. Gate Current vs Input Power Figure 18. Output Power vs Input Power
as a Function of Frequency as a Function of Temperature

6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, CW, PIN = 22 dBm, TBASE = +25 °C

Figure 46. – Power Added Eff. Vs Input Power as a Function of Temperature Figure 47. – Large Signal Gain vs Input Power as a Function of Temperature

60 35
33
50 31
Power Added Eff. (%

40 29

LS Gain (dB)
27
30 25
23
20 21 85 °C
85 °C
19 25 °C
10 25 °C
-40 °C Frequency = 4 GHz
Frequency = 4 GHz -40 °C 17
0 15
-7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23

Input Power (dBm) Input Power (dBm)

Figure 19. Power Added Eff. vs Input Power Figure 20. Large Signal Gain vs Input Power
as a Function of Temperature as a Function of Temperature

Figure 48. – Drain Current vs Input Power as a Function of Temperature Figure 49. – Gate Current vs Input Power as a Function of Temperature

5 1.5

4 1.0 85 °C
Gate Current (mA)
Drain Current (A)

Frequency = 4 GHz 25 °C
3 0.5 -40 °C

2 0.0
85 °C
1 Frequency = 4 GHz 25 °C -0.5
-40 °C
0 -1.0
-7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23

Input Power (dBm) Input Power (dBm)

Figure 21. Drain Current vs Input Power Figure 22. Gate Current vs Input Power
as a Function of Temperature as a Function of Temperature

Figure 51. – Power Added Eff. Vs Input Power as a Function of IDQ

60
Figure 50. – Output Power vs Input Power as a Function of IDQ

50
1000 mA
45 50 Frequency = 4 GHz
Power Added Eff. (%)

500 mA
Output Power (dBm)

40 40 250 mA
35 30
30
1000 mA 20
25 Frequency = 4 GHz 500 mA
10
20 250 mA
15 0
-7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 -7 -2 3 8 13 18 23

Input Power (dBm) Input Power (dBm)

Figure 23. Output Power vs Input Power Figure 24. Power Added Eff. vs Input Power
as a Function of IDQ as a Function of IDQ

7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, CW, PIN = 22 dBm, TBASE = +25 °C

Figure 52. – Large Signal Gain vs Input Power as a Function of IDQ Figure 53. – Drain Current vs Input Power as a Function of IDQ

35 5
33 1000 mA
31 4
500 mA Frequency = 4 GHz

Drain Current (A)

29
LS Gain (dB)

27 3 250 mA
25
23 2
21 1000 mA
Frequency = 4 GHz
19 500 mA 1
17 250 mA
15 0
-7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23

Input Power (dBm) Input Power (dBm)

Figure 25. Large Signal Gain vs Input Power Figure 26. Drain Current vs Input Power
as a Function of IDQ as a Function of IDQ

Figure 54. – Gate Current vs Input Power as a Function of IDQ Figure 55. – 2nd Harmonic vs Frequency as a Function of Temperature

1.5 0
2nd Harmonic Level (dBc)

1000 mA Frequency = 4 GHz -20

Gate Current (mA)

1.0 500 mA
250 mA -40

0.5 -60

-80
85 °C
0.0
-100 25 °C
-40 °C
-0.5 -120
-7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 2 3 4 5 6

Input Power (dBm) Frequency (GHz)

Figure 27. Gate Current vs Input Power Figure 28. 2nd Harmonic vs Frequency as
as a Function of IDQ a Function of Temperature

Figure 57. – 2nd Harmonic vs Output Power as a Function of Frequency

Figure 56. – 3rd Harmonic vs Frequency as a Function of Temperature

0 0
3rd Harmonic Level (dBc)

2nd Harmonic Level (dBc)

-20 -20

-40 -40

-60 -60

-80 -80
85 °C 2 GHz
-100 25 °C -100 4 GHz
-40 °C 6 GHz
-120 -120
2 3 4 5 6 22 24 26 28 30 32 34 36 38 40 42 44 46

Frequency (GHz) Output Power (dBm)

Figure 29. 3rd Harmonic vs Frequency as Figure 30. 2nd Harmonic vs Output Power as
a Function of Temperature a Function of Frequency

8
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, CW, PIN = 22 dBm, TBASE = +25 °C

Figure 58. – 3rd Harmonic vs Output Power as a Function of Frequency Figure 59. – 2nd Harmonic vs Output Power as a Function of IDQ

0 0

2nd Harmonic Level (dBc)

3rd Harmonic Level (dBc)

-20 -20

-40 -40

-60 -60

-80 -80 1000 mA Frequency = 4 GHz

2 GHz 500 mA
-100 4 GHz -100
250 mA
6 GHz
-120 -120
22 24 26 28 30 32 34 36 38 40 42 44 46 22 24 26 28 30 32 34 36 38 40 42 44 46

Output Power (dBm) Output Power (dBm)

Figure 31. 3rd Harmonic vs Output Power as Figure 32. 2nd Harmonic vs Output Power as
a Function of Frequency a Function of IDQ

Figure 60. – 3rd Harmonic vs Output Power as a Function of IDQ

0
3rd Harmonic Level (dBc)

-20

-40

-60

-80 1000 mA
Frequency = 4 GHz
500 mA
-100 250 mA
-120
22 24 26 28 30 32 34 36 38 40 42 44 46

Output Power (dBm)

Figure 33. 3rd Harmonic vs Output Power as

a Function of IDQ

9
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, PIN = -20 dBm, TBASE = +25 °C

Figure 62 - Gain vs. Frequency as a Function of Temperature

Figure 61 - Gain vs. Frequency as a Function of Temperature 50

60
45
40
40
20
0 35

S21 (dB)
S21 (dB)

-20 30
-40 25
-60
20 85 °C
-80 85 °C 25 °C
25 °C 15
-100 -40 °C
-40 °C 10
-120
2 3 4 5 6
0 2 4 6 8
Frequency (GHz)
Frequency (GHz)
Frequency (GHz) Frequency (GHz)

Figure 34. Gain vs Frequency as a Figure 35. Gain vs Frequency as a

Function of Temperature Function of Temperature

Figure 64 - Input Return Loss vs. Frequency as a Function of Temperature

Figure 63 - Input Return Loss vs. Frequency as a Function of Temperature

5 5
0 0
-5 -5
-10 -10
-15 -15
S11 (dB)

S11 (dB)

-20 -20
-25 -25
85 °C
-30 85 °C -30
25 °C
25 °C -35
-35 -40 °C
-40 °C
-40 -40
0 2 4 6 8 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
Frequency (GHz) Frequency (GHz)

Figure 36. Input RL vs Frequency as a Figure 37. Input RL vs Frequency as a

Function of Temperature Function of Temperature
Figure 66 - Output Return Loss vs.
Figure 65 - Output Return Loss vs. Frequency as a Function of Temperature Frequency as a Function of
5 Temperature
0 5
-5 0
-10 -5
-10
-15
S22 (dB)

-15
S22 (dB)

-20
-20
-25 -25 85 °C
85 °C
-30 -30 25 °C
25 °C
-35 -35 -40 °C
-40 °C
-40
-40
0 2 4 6 8 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
Frequency (GHz) Frequency (GHz)

Figure 38. Output RL vs Frequency as a Figure 39. Output RL vs Frequency as a

Function of Temperature Function of Temperature
10
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, PIN = -20 dBm, TBASE = +25 °C

Figure 68 - Gain vs. Frequency as a Function of IDQ

40
Figure 67 - Gain vs. Frequency as a Function of Voltage

40
35 35

30 30

25 25

Gain (dB)
S21 (dB)
S21 (dB)

20 20

15 15

10 10 250 mA
28 V 500 mA
5 26 V 5 1000 mA
24 V
0 0
2 3 4 5 6 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
Frequency (GHz) Frequency (GHz)

Figure 40. Gain vs Frequency as a Figure 41. Gain vs Frequency as a

Function of Voltage Function of Voltage

Figure 70 - Input Return Loss vs. Frequency as a Function of IDQ

Figure 69 - Input Return Loss vs. Frequency as a Function of Voltage

5 5

0 0

-5 -5

-10 -10
-15
S11 (dB)

S11 (dB)

-15
-20 -20

-25 -25
28 V 250 mA
-30 -30
26 V 500 mA
-35 -35 1000 mA
24 V
-40 -40
2 3 4 5 6 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
Frequency (GHz) Frequency (GHz)

Figure 42. Input RL vs Frequency as a Figure 43. Input RL vs Frequency as a

Function of Voltage Function of IDQ

Figure 72 - Output Return Loss vs. Frequency as a Function of Voltage

Figure 71 - Output Return Loss vs. Frequency as a Function of Voltage
5
5
0
0
-5 -5

-10 -10
S22 (dB)

S22 (dB)

-15 -15

-20 -20

-25 -25 250 mA

28 V -30 500 mA
-30
26 V 1000 mA
-35 -35
24 V
-40 -40
2 3 4 5 6 2 3 4 5 6
Frequency (GHz) Frequency (GHz)
Frequency (GHz) Frequency (GHz)

Figure 44. Output RL vs Frequency as a Figure 45. Output RL vs Frequency as a

Function of Voltage Function of IDQ

11
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
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CMPA2060035F1

Typical Performance of the CMPA2060035F1

Test conditions unless otherwise noted: VD = 28 V, IDQ = 1000 mA, PIN = -20 dBm, TBASE = +25 °C

60 60

50 50
PIN (dBm), POUT (dBm), PAE (%)

PIN (dBm), POUT (dBm), PAE (%)

40 40

30 30

20 20

PIN POUT PAE PIN POUT PAE

10 10

0 0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Frequency (GHz) Frequency (GHz)

Figure 46. Output Power and Power Added Eff. Figure 47. Output Power and Power Added Eff. vs
vs Frequency when Optimized for Maximum PAE Frequency when Optimized for Mamimum Output Power

12
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CMPA2060035F1

CMPA2060035F1-AMP Evaluation Board Schematic

CMPA2060035F1-AMP Evaluation Board Outline

J3

C16

C17

J4

W1

C2
C10
C3 C11
C4
C5

C12

C1 W2
C13
C6

C7
C8 C14
J1 C9 C15 J2

3-000902 REV2

13
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CMPA2060035F1

CMPA2060035F1-AMP Evaluation Board Bill of Materials

Designator Description Qty

C1 CAP, 3.9 pF, +/-0.1 pF, 0402, ATC 1
C11, C14 CAP CER 22,000 PF 100 V 10% X7R 0805 2
C12, C13 CAP, 22 pF,+/-5%, 0603, ATC 2
C16 CAP 10 UF 16 V TANTALUM, 2312 1
C17 CAP, 33 UF, 20%, G CASE 1
C2, C9, C10, C15 CAP CER 0.1 UF 100 V 10% X7R 0805 4
C3, C4, C7, C8 CAP, 100.0 pF, +/-5%, 0603, ATC 4
C5, C6 CAP, 10.0 pF, +/-5%, 0603, ATC 2
CONN, SMA, PANEL MOUNT JACK, FLANGE,
J1, J2 2
4-HOLE, BLUNT POST, 20 MIL
J3 HEADER RT>PLZ .1CEN LK 5POS 1
CONN, SMB, STRAIGHT JACK RECEPTACLE, SMT,
J4 1
50 OHM, Au PLATED
W1, W2 WIRE, BLACK, 22 AWG 2
TEST FIXTURE, 2-6 GHz, CMPA2060035F1 1
PCB board 2.6" X 1.7", TACONIC RF 35, 0.01",
1
440219 Package
BASEPLATE, AL, 2.60 X 1.70 X 2.50 1
CMPA2060035F1: GaN, MMIC PA, 35 W, 2-6 GHz,
Q1 1
Flange

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1 B (≥ 500 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (≥ 200 V) JEDEC JESD22 C101-C

14
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
https://www.macom.com/support
CMPA2060035F1

Product Dimensions CMPA2060035F1 (Package 440219 )

Pin Desc.
1 Gate 1

2 RF_IN

3 Gate 2

4 Drain 1

5 RF_OUT

6 Drain 2

15
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
https://www.macom.com/support
CMPA2060035F1

Part Number System

CMPA2060035F1

Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
MMIC Power Amplifier

Table 1.

Parameter Value Units

Lower Frequency 2.0 GHz
Upper Frequency 6.0 GHz
Power Output 35 W
Package Flange –

Note:
Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value.

Table 2.

Character Code Code Value

A 0
B 1
C 2
D 3
E 4
F 5
G 6
H 7
J 8
K 9

1 A = 10.0 GHz
Examples:
2 H = 27.0 GHz

16
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
https://www.macom.com/support
CMPA2060035F1

Product Ordering Information

Order Number Description Unit of Measure Image

CMPA2060035F1 GaN HEMT Each

CMPA2060035F1-AMP Test Board with GaN MMIC Installed Each

17
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
https://www.macom.com/support
CMPA2060035F1

Notes & Disclaimer

MACOM Technology Solutions Inc. (“MACOM”). All rights reserved.

These materials are provided in connection with MACOM’s products as a service to its customers and may be
used for informational purposes only. Except as provided in its Terms and Conditions of Sale or any separate
agreement, MACOM assumes no liability or responsibility whatsoever, including for (i) errors or omissions in these
materials; (ii) failure to update these materials; or (iii) conflicts or incompatibilities arising from future changes to
specifications and product descriptions, which MACOM may make at any time, without notice. These materials
grant no license, express or implied, to any intellectual property rights.

THESE MATERIALS ARE PROVIDED "AS IS" WITH NO WARRANTY OR LIABILITY, EXPRESS OR IMPLIED,
RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING FITNESS FOR A PARTICULAR
PURPOSE, MERCHANTABILITY, INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHT, ACCURACY OR
COMPLETENESS, OR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES WHICH MAY
RESULT FROM USE OF THESE MATERIALS.

MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to fully
indemnify MACOM for any damages resulting from such improper use or sale.

18
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: Rev. 0.3, SEPTEMBER 2023
https://www.macom.com/support