MMIS60R900P Datasheet

MMIS60R900P
600V 0.9Ω N-channel MOSFET

 Description
MMIS60R900P is power MOSFET using magnachip’s advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.

 Key Parameters  Package & Internal Circuit

Parameter Value Unit D

VDS @ Tj,max 650 V
RDS(on),max 0.9 Ω
VTH,typ 3 V G
ID 4.5 A
Qg,typ 12.3 nC G
D
S S

 Features
 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications
 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information
Order Code Marking Temp. Range Package Packing RoHS Status
TO-251-VS
MMIS60R900PTH 60R900P -55 ~ 150℃ Tube Halogen Free
(IPAK-VS)

Jul. 2013 Revision 1.0 1 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

 Absolute Maximum Rating (Tc=25℃ unless otherwise specified)

Parameter Symbol Rating Unit Note

Drain – Source voltage VDSS 600 V

Gate – Source voltage VGSS ±30 V

4.5 A TC=25℃
Continuous drain current ID
2.7 A TC=100℃

Pulsed drain current(1) IDM 13.5 A

Power dissipation PD 38 W

Single - pulse avalanche energy EAS 46 mJ

MOSFET dv/dt ruggedness dv/dt 50 V/ns

Diode dv/dt ruggedness dv/dt 15 V/ns

Storage temperature Tstg -55 ~150 ℃

Maximum operating junction
Tj 150 ℃
temperature
1) Pulse width tP limited by Tj,max
2) ISD ≤ ID, VDS peak ≤ V(BR)DSS

 Thermal Characteristics

Parameter Symbol Value Unit

Thermal resistance, junction-case max Rthjc 3.25 ℃/W

Thermal resistance, junction-ambient max Rthja 62.5 ℃/W

Jul. 2013 Revision 1.0 2 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

 Static Characteristics (Tc=25℃ unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Drain – Source
V(BR)DSS 600 - - V VGS = 0V, ID=0.25mA
Breakdown voltage
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID=0.25mA
Zero Gate Voltage
IDSS - - 1 μA VDS = 600V, VGS = 0V
Drain Current
Gate Leakage Current IGSS - - 100 nA VGS = ±30V, VDS =0V
Drain-Source On
RDS(ON) - 0.81 0.9 Ω VGS = 10V, ID = 1.5A
State Resistance

 Dynamic Characteristics (Tc=25℃ unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Input Capacitance Ciss - 396 -

VDS = 25V, VGS = 0V,
Output Capacitance Coss - 306 -
f = 1.0MHz
pF
Reverse Transfer Capacitance Crss - 19 -
Effective Output Capacitance VDS = 0V to 480V,
Co(er) - 17 -
Energy Related (3) VGS = 0V,f = 1.0MHz
Turn On Delay Time td(on) - 15 -

Rise Time tr - 29 -
VGS = 10V, RG = 25Ω,
ns
VDS = 300V, ID = 4.5A
Turn Off Delay Time td(off) - 151 -

Fall Time tf - 34 -

Total Gate Charge Qg - 12.3 -

VGS = 10V, VDS =480V
Gate – Source Charge Qgs - 2.3 - nC
ID = 4.5A
Gate – Drain Charge Qgd - 6 -

Gate Resistance RG - 4.7 - Ω VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

Jul. 2013 Revision 1.0 3 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

 Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Continuous Diode Forward
ISD - - 4.5 A
Current
Diode Forward Voltage VSD - - 1.4 V ISD = 4.5 A, VGS = 0 V

Reverse Recovery Time trr - 232 - ns

ISD = 4.5 A
Reverse Recovery Charge Qrr - 1.4 - μC di/dt = 100 A/μs
VDD = 100 V
Reverse Recovery Current Irrm - 12.4 - A

Jul. 2013 Revision 1.0 4 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

 Characteristic Graph

Jul. 2013 Revision 1.0 5 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

Jul. 2013 Revision 1.0 6 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

Jul. 2013 Revision 1.0 7 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

 Test Circuit
Same type as DUT

VGS
100KΩ Qg
10V
10V

+
Qgs Qgd
VDS
-

1mA DUT

10V

Charge

Fig15-1. Gate charge measurement circuit Fig15-2. Gate charge waveform

trr
DUT IFM 0.5 IRM
IF ta tb

+ 0.25 IRM
V
- DS
di/dt
IS L
0.75 IRM
IRM
Rg
10KΩ +
Same type as DUT
VDD VR
-

Vgs ± 15V
VRM(REC)

Fig16-1. Diode reverse recovery test circuit Fig16-1. Diode reverse recovery test waveform
ID
DUT
VDS VDS
Rg
25Ω
90%
RL

Vgs 10%
tp
+
VDD
- VGS
Td(on) tr Td(off) tf
ton toff

Fig17-1. Switching time test circuit for resistive load Fig17-2. Switching time waveform
IAS
DUT
VDS BVDSS
tp tAV
Rg

L IAS

Vgs VDD VDS(t)

tp
+
VDD
-

Rds(on) * IAS

Fig18-1. Unclamped inductive load test circuit Fig18-2. Unclamped inductive waveform

Jul. 2013 Revision 1.0 8 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

 Physical Dimension

TO-251-VS,3L (IPAK-VS)
Dimensions are in millimeters, unless otherwise specified

Jul. 2013 Revision 1.0 9 MagnaChip Semiconductor Ltd.

 MMIS60R900P Datasheet

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jul. 2013 Revision 1.0 10 MagnaChip Semiconductor Ltd.