CMPA601J025D

25 W, 6.0 - 18.0 GHz, GaN MMIC, Power Amplifier

Description
Cree’s CMPA601J025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift
velocity and higher thermal conductivity. GaN HEMTs also offer greater
power density and wider bandwidths compared to Si and GaAs transistors.
This MMIC enables very wide bandwidths.

PN: CMPA601J025D

Typical Performance Over 6.0 - 18.0 GHz (TC = 25˚C)

Parameter 6.0 GHz 10.0 GHz 14.0 GHz 18.0 GHz Units
Small Signal Gain 31.8 36.0 29.4 33.0 dB
Output Power 1
44.0 47.2 44.0 44.1 dBm
Output Power 1
25.3 52.8 25.2 25.5 W
Power Gain 1
18.0 21.2 18.0 18.1 dB
Power Added Efficiency 1
37.0 42.8 18.2 21.4 %

Note : Measured CW at PIN = 26 dBm

1

Features Applications
• > 30 dB Typical Small Signal Gain • Jamming Amplifiers
• 35 W Typical PSAT • Test Equipment Amplifiers
• Operation up to 22 V • Broadband Amplifiers
• High Breakdown Voltage • Radar Amplifiers
• High Temperature Operation
• Size 0.157 x 0.239 x 0.003 inches

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA601J025D 2

Absolute Maximum Ratings (not simultaneous) at 25˚C

Parameter Symbol Rating Units Conditions

Drain-source Voltage VDSS 84 VDC 25˚C
Gate-source Voltage VGS -10, +2 VDC 25˚C
Storage Temperature TSTG -55, +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 11 mA 25˚C
Maximum Drain Current 1
IDMAX 0.6 A Stage 1, 25˚C
Maximum Drain Current 1
IDMAX 1.68 A Stage 2, 25˚C
Maximum Drain Current1 IDMAX 3.6 A Stage 3, 25˚C
Thermal Resistance, Junction to Case (packaged) 2
RθJC 1.32 ˚C/W Note 3
Thermal Resistance, Junction to Back of MMIC RθJC 1.08 ˚C/W Note 4
Mounting Temperature (30 seconds) TS 320 ˚C 30 seconds
Notes:
1
Current limit for long term, reliable operation 4
Operating conditions: same as note 3. Junction to back of MMIC thermal
2
Eutectic die attach using .5 mil thick 80/20 AuSn mounted to a 40 mi resistance is based on the hottest junction down to the peak
thick aluminum diamond (k=500 W/m-K) shim sized 2 mil larger than temperature of the back side of the MMIC.
the dieon each side.
3
Operating conditions: 121 watts total power dissipated and 65°C
isothermal bottom of shim. Junction to case thermal resistance is based
on the hottest junction down to the 65°C isothermal bottom of shim.

Electrical Characteristics (Frequency = 6.0 GHz to 18.0 GHz unless otherwise stated; TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics1
Gate Threshold VTH – -1.9 – V VDS = 10 V, ID = 17.5 mA
Gate Quiescent Voltage VGS(Q) – -1.8 – VDC VDS = 22 V, ID = 800 mA
Saturated Drain Current IDS 12.6 17.5 – A VDS = 6 V, VGS = 2 V
Drain-Source Breakdown Voltage VBD 84 – – V VGS = -8 V, ID = 17.5 mA
RF Characteristics2
Small Signal Gain S21 26.4 31.9 – dB VDD = 22 V, IDQ = 0.8 A, PIN = -10 dBm, Freq = 6 - 11 GHz
Small Signal Gain S21 23.8 29.5 – dB VDD = 22 V, IDQ = 0.8 A, PIN = -10 dBm, Freq = 11 - 18 GHz
Input Return Loss S11 – -13.5 -7.6 dB VDD = 22 V, IDQ = 0.8 A, PIN = -10 dBm, Freq = 6 - 14 GHz
Input Return Loss S11 – -11.4 -5.8 dB VDD = 22 V, IDQ = 0.8 A, PIN = -10 dBm, Freq = 14 - 18 GHz
Output Return Loss S22 – -7.6 -2.5 dB VDD = 22 V, IDQ = 0.8 A, PIN = -10 dBm, Freq = 6 - 10 GHz
Output Return Loss S22 – -7.5 -4.0 dB VDD = 22 V, IDQ = 0.8 A, PIN = -10 dBm, Freq = 10 - 18 GHz
Output Power POUT1 42.9 43.8 – dBm VDD = 22 V, IDQ = 0.8 A, PIN = 23 dBm, Freq = 6 GHz
Output Power POUT2 42.3 44.6 – dBm VDD = 22 V, IDQ = 0.8 A, PIN = 23 dBm, Freq = 9.5 GHz
Output Power POUT3 44.3 45.8 – dBm VDD = 22 V, IDQ = 0.8 A, PIN = 23 dBm, Freq = 14 GHz
Output Power POUT4 44.0 45.6 – dBm VDD = 22 V, IDQ = 0.8 A, PIN = 23 dBm, Freq = 18 GHz
Power Added Efficiency PAE1 31.3 36.5 – % VDD = 22 V, IDQ = 0.8 A, PIN = 23 dBm, Freq = 6 GHz
Power Added Efficiency PAE2 18.0 27.0 – % VDD = 22 V, IDQ = 0.8 A, PIN = 23 dBm, Freq = 9.5 GHz
Power Added Efficiency PAE3 18.2 25.4 – % VDD = 22 V, IDQ = 0.8 A, PIN = 23 dBm, Freq = 14 GHz
Power Added Efficiency PAE4 18.3 27.1 – % VDD = 22 V, IDQ = 0.8 A, PIN = 23 dBm, Freq = 18 GHz
No damage at all phase angles,
Output Mismatch Stress VSWR – 5:1 – Y VDD = 22 V, IDQ = 0.8 A, POUT = 25 W CW
Notes:
1
Scaled from PCM data
2
All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 1%.

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA601J025D 3
DIE Dimensions (units in microns)

Overall die size 4000 x 6080 (+0/-50) microns, die thickness 75 (+/-10) microns.
All Gate and Drain pads must be wire bonded for electrical connection.

Pad Number Function Description Pad Size (mm) Note

1 RF IN RF Input pad. Matched to 50 ohm. The DC impedance ~ 0 ohm due to matching circuit. 130 x 250 4
2 VG1&2_A Gate control for stage 1&2A. VG = -1.5 to -2.5 V. 125 x 125 1, 2
3 VG1&2_B Gate control for stage 1&2B. VG = -1.5 to -2.5 V. 125 x 125 1, 2
4 VD1_A Drain supply for stage 1A. VD = 22 V. 125 x 125 1
5 VD1_B Drain supply for stage 1B. VD = 22 V. 125 x 125 1
6 VD2_A Drain supply for stage 2A. VD = 22 V. 125 x 125 1
7 VD2_B Drain supply for stage 2B. VD = 22 V. 125 x 125 1
8 VG3_A Gate control for stage 3A. VG = -1.5 to -2.5 V. 125 x 125 1, 3
9 VG3_B Gate control for stage 3B. VG = -1.5 to -2.5 V. 125 x 125 1, 3
10 VD3_A Drain supply for stage 3A. VD = 22 V. 470 x 150 1
11 VD3_B Drain supply for stage 3B. VD = 22 V. 470 x 150 1
12 RF OUT RF Output pad. Matched to 50 ohm. 130 x 250 4

Notes: 4
The RF Input and Output pad have a ground-signal-ground with a
1
Attach bypass capacitor to pads 2-11 per application circuit. nominal pitch of 10 mil (250 um). The RF ground pads are
2
VG1&2_A and VG1&2_B are connected internally so it would be enough 100 x 100 microns.
to connect either one for proper operation.
3
VG3_A and VG3_B are connected internally so it would be enough to
connect either one for proper operation.

Die Assembly Notes:

• Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at www.cree.com/rf/document-library
• Vacuum collet is the preferred method of pick-up
• The backside of the die is the Source (ground) contact
• Die back side gold plating is 5 microns thick minimum
• Thermosonic ball or wedge bonding are the preferred connection methods
• Gold wire must be used for connections
• Use the die label (XX-YY) for correct orientation

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA601J025D 4
CMPA601J025D Typical Performance

Figure 1. Small Signal S-parameters

CMPA601J025D in Test Fixture
VDD = 22 V, IDQ = 0.8 A, Temp = 25°C
40

30

20
Gain, Return Loss (dB)
Gain, Return Loss (dB)

10

-10

-20

S21
-30
S11
S22
-40
4 6 8 10 12 14 16 18 20

Frequency (GHz)
Frequency (GHz)

Figure 2. CW @ PIN= 26 dBm

CMPA601J025D in Test Fixture
VDD = 22 V, IDQ = 0.8 A, Temp = 25°C
50 50

40 40
Pout (dBm) and Gain (dB)
Pout (dBm) and Gain (dB)

30 30
PAE (%)
PAE (%)

20 20

10 10
Pout
Gain
PAE
0 0
6 8 10 12 14 16 18

Frequency (GHz)
Frequency (GHz)

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA601J025D 5
CMPA601J025D Typical Performance

Figure 3. CW Power Sweep @ 6 GHz

CMPA601J025D in Test Fixture
VDD = 22 V, IDQ = 0.8 A, Temp = 25°C
50

45
Pout (dBm), PAE (%), Gain (dB)

40
Pout (dBm), PAE (%), Gain (dB)

35

30

25

20

15

10 Pout
PAE
5
Gain

0
10 12 14 16 18 20 22 24 26

Input Power (dBm)

Input Power (dBm)

Figure 4. CW Power Sweep @ 10 GHz

CMPA601J025D in Test Fixture
VDD = 22 V, IDQ = 0.8 A, Temp = 25°C
50

45
Pout (dBm), PAE (%), Gain (dB)

40
Pout (dBm), PAE (%), Gain (dB)

35

30

25

20

15

10
Pout
PAE
5
Gain

0
10 12 14 16 18 20 22 24 26

Input Power (dBm)

Input Power (dBm)

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA601J025D 6
CMPA601J025D Typical Performance

Figure 5. CW Power Sweep @ 14 GHz

CMPA601J025D in Test Fixture
VDD = 22 V, IDQ = 0.8 A, Temp = 25°C
50

45
Pout (dBm), PAE (%), Gain (dB)

40
Pout (dBm), PAE (%), Gain (dB)

35

30

25

20

15

10
Pout

5 PAE
Gain

0
10 12 14 16 18 20 22 24 26

Input Power (dB)

Input Power (dB)

Figure 6. CW Power Sweep @ 18 GHz

CMPA601J025D in Test Fixture
VDD = 22 V, IDQ = 0.8 A, Temp = 25°C
50

45
Pout (dBm), PAE (%), Gain (dB)

40
Pout (dBm), PAE (%), Gain (dB)

35

30

25

20

15

10 Pout
PAE
5
Gain

0
10 12 14 16 18 20 22 24 26

Input
InputPower (dBm)
Power (dBm)

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA601J025D 7

Block Diagram Showing Additional Capacitors for Operation Over 6.0 to 18.0 GHz

C1 C3 C5 C12

VD

C11 C2 C4

VG

VD1_B VG1&2_B VD2_B VG3_B VD3_B

RF_IN RF_OUT

VD1_A VG1&2_A VD2_A VG3_A VD3_A

C13 C7 C9

C6 C8 C10 C14

Designator Description Quantity

C1, C2, C3, C4, C5, C6 ,C7, C8, C9, C10 CAP, 56pF, +/-10%, SINGLE LAYER, 0.035" 10

C11, C12, C13, C14 CAP, 560pF, +/-10%, SINGLE LAYER, 0.050" 4

Notes:
1
The input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 10 mils with a maximum of 15 mils
2
The MMIC die and capacitors should be connected with 2 mil gold bond wires

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA601J025D 8

Part Number System

CMPA601J025D
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line

Table 1.
Parameter Value Units
Lower Frequency 6.0 GHz
Upper Frequency1 18.0 GHz
Power Output 25 W
Package Bare Die -

Note1: Alpha characters used in frequency code indicate a value

greater than 9.9 GHz. See Table 2 for value.

Table 2.
Character Code Code Value
A 0
B 1
C 2
D 3
E 4
F 5
G 6
H 7
J 8
K 9
1A = 10.0 GHz
Examples:
2H = 27.0 GHz

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com
 CMPA601J025D 9

For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703
www.wolfspeed.com/RF

Sales Contact
RFSales@cree.com

Notes
Disclaimer
Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in
large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use
as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would
reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringe-
ment of patents or other rights of third parties which may result from use of the information contained herein. No license
is granted by implication or otherwise under any patent or patent rights of Cree.

© 2018-2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.

Rev 0.2 – April 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com