74HC4052N
74HC4052N
74HC4052N
DATA SHEET
74HC4052; 74HCT4052
Dual 4-channel analog multiplexer,
demultiplexer
Product specification 2004 Nov 11
Supersedes data of 2003 May 16
Philips Semiconductors Product specification
FEATURES DESCRIPTION
• Wide analog input voltage range from −5 V to +5 V The 74HC4052 and 74HCT4052 are high-speed Si-gate
• Low ON-resistance: CMOS devices and are pin compatible with the
HEF4052B. They are specified in compliance with JEDEC
– 80 Ω (typical) at VCC − VEE = 4.5 V standard no. 7A.
– 70 Ω (typical) at VCC − VEE = 6.0 V
The 74HC4052 and 74HCT4052 are dual 4-channel
– 60 Ω (typical) at VCC − VEE = 9.0 V analog multiplexers or demultiplexers with common select
• Logic level translation: to enable 5 V logic to logic. Each multiplexer has four independent
communicate with ±5 V analog signals inputs/outputs (pins nY0 to nY3) and a common
• Typical “break before make” built in input/output (pin nZ). The common channel select logics
include two digital select inputs (pins S0 and S1) and an
• Complies with JEDEC standard no. 7A active LOW enable input (pin E). When pin E = LOW, one
• ESD protection: of the four switches is selected (low-impedance ON-state)
– HBM EIA/JESD22-A114-B exceeds 2000 V with pins S0 and S1. When pin E = HIGH, all switches are
in the high-impedance OFF-state, independent of pins S0
– MM EIA/JESD22-A115-A exceeds 200 V.
and S1.
• Specified from −40 °C to +85 °C and −40 °C to +125 °C.
VCC and GND are the supply voltage pins for the digital
control inputs (pins S0, S1, and E). The VCC to GND
APPLICATIONS ranges are 2.0 V to 10.0 V for 74HC4052 and
• Analog multiplexing and demultiplexing 4.5 V to 5.5 V for 74HCT4052. The analog inputs/outputs
(pins nY0 to nY3 and nZ) can swing between VCC as a
• Digital multiplexing and demultiplexing positive limit and VEE as a negative limit. VCC − VEE may
• Signal gating. not exceed 10.0 V.
For operation as a digital multiplexer/demultiplexer, VEE is
connected to GND (typically ground).
FUNCTION TABLE
INPUT(1)
CHANNEL BETWEEN
E S1 S0
L L L nY0 and nZ
L L H nY1 and nZ
L H L nY2 and nZ
L H H nY3 and nZ
H X X none
Note
1. H = HIGH voltage level
L = LOW voltage level
X = don’t care.
2004 Nov 11 2
Philips Semiconductors Product specification
TYPICAL
SYMBOL PARAMETER CONDITIONS UNIT
74HC4052 74HCT4052
tPZH/tPZL turn-on time E or Sn to Vos CL = 15 pF; RL = 1 kΩ; 28 18 ns
VCC = 5 V
tPHZ/tPLZ turn-off time E or Sn to Vos CL = 15 pF; RL = 1 kΩ; 21 13 ns
VCC = 5 V
CI input capacitance 3.5 3.5 pF
CPD power dissipation capacitance per switch notes 1 and 2 57 57 pF
CS maximum switch capacitance independent (Y) 5 5 pF
common (Z) 12 12 pF
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ[(CL + CS) × VCC2 × fo] where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CS = maximum switch capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
Σ[(CL + CS) × VCC2 × fo] = sum of the outputs.
2. For 74HC4052 the condition is VI = GND to VCC
For 74HCT4052 the condition is VI = GND to VCC − 1.5 V.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER TEMPERATURE
PINS PACKAGE MATERIAL CODE
RANGE
74HC4052D −40 °C to +125 °C 16 SO16 plastic SOT109-3
74HCT4052D −40 °C to +125 °C 16 SO16 plastic SOT109-3
74HC4052DB −40 °C to +125 °C 16 SSOP16 plastic SOT338-1
74HCT4052DB −40 °C to +125 °C 16 SSOP16 plastic SOT338-1
74HC4052N −40 °C to +125 °C 16 DIP16 plastic SOT38-9
74HCT4052N −40 °C to +125 °C 16 DIP16 plastic SOT38-9
74HC4052PW −40 °C to +125 °C 16 TSSOP16 plastic SOT403-1
74HC4052BQ −40 °C to +125 °C 16 DHVQFN16 plastic SOT763-1
74HCT4052BQ −40 °C to +125 °C 16 DHVQFN16 plastic SOT763-1
2004 Nov 11 3
Philips Semiconductors Product specification
PINNING
16 VCC
2Y0
handbook, halfpage
terminal 1
2Y0 1 16 VCC index area
1
VEE 7 10 S0
GND
S1
001aac117
GND 8 9 S1
Transparent top view
MNB039
(1) The die substrate is attached to this pad using conductive die
attach material. It can not be used as a supply pin or input.
Fig.1 Pin configuration DIP16, SO16 and
(T)SSOP16. Fig.2 Pin configuration DHVQFN16.
2004 Nov 11 4
Philips Semiconductors Product specification
handbook, halfpage 10
13 0 0
handbook, halfpage 4×
9 3
1
1Z
1Y0 6 G4
12
10 S0 1Y1 14
MDX 1
9 S1 1Y2 15 0
5
1Y3 11 1
3
2
2Y0 1 2
2Y1 4
5 3
2Y2 2 12
6 E 2Y3 4 14
13
2Z
15
MNB040
3 11
MNB041
16 13
1Z
12
1Y0
14
1Y1
15
10 1Y2
S0
11
1Y3
LOGIC 1 - OF - 4
LEVEL DECODER
9 CONVERSION 1
S1 2Y0
5
2Y1
6
E 2
2Y2
4
2Y3
3
2Z
8 7
MNB042
GND VEE
2004 Nov 11 5
Philips Semiconductors Product specification
VCC VEE
VCC VCC
VCC VEE
VEE nZ
from
logic
MNB043
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to VEE = GND
(ground = 0 V); note 1.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage −0.5 +11.0 V
IIK input diode current VI < −0.5 V or VI > VCC + 0.5 V − ±20 mA
ISK switch diode current VS < −0.5 V or VS > VCC + 0.5 V − ±20 mA
IS switch current −0.5 V < VS < VCC + 0.5 V − ±25 mA
IEE VEE current − ±20 mA
ICC; IGND VCC or GND current − ±50 mA
Tstg storage temperature −65 +150 °C
Ptot power dissipation Tamb = −40 °C to +125 °C; note − 500 mW
PS power dissipation per switch − 100 mW
Notes
1. To avoid drawing VCC current out of pins nZ, when switch current flows in pins nYn, the voltage drop across the
bidirectional switch must not exceed 0.4 V. If the switch current flows into pins nZ, no VCC current will flow out of
pins nYn. In this case there is no limit for the voltage drop across the switch, but the voltages at pins nYn and nZ may
not exceed VCC or VEE.
2. For DIP16 packages: above 70 °C derate linearly with 12 mW/K.
For SO16 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP16 and TSSOP16 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN16 packages: above 60 °C derate linearly with 4.5 mW/K.
2004 Nov 11 6
Philips Semiconductors Product specification
74HC4052 74HCT4052
SYMBOL PARAMETER CONDITIONS UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
VCC supply voltage see Figs 7 and 8
VCC − GND 2.0 5.0 10.0 4.5 5.0 5.5 V
VCC − VEE 2.0 5.0 10.0 2.0 5.0 10.0 V
VI input voltage GND − VCC GND − VCC V
VS switch voltage VEE − VCC VEE − VCC V
Tamb operating ambient see DC and AC −40 +25 +85 −40 +25 +85 °C
temperature characteristics per −40 − +125 −40 − +125 °C
device
tr, tf input rise and fall times VCC = 2.0 V − 6.0 1000 − 6.0 500 ns
VCC = 4.5 V − 6.0 500 − 6.0 500 ns
VCC = 6.0 V − 6.0 400 − 6.0 500 ns
VCC = 10.0 V − 6.0 250 − 6.0 500 ns
MNB044 MNB045
12 12
handbook, halfpage handbook, halfpage
VCC − GND
VCC − GND (V)
(V) 10
8 8
operating area 6
operating area
4 4
0 0
0 4 8 12 0 4 8 12
VCC − VEE (V) VCC − VEE (V)
Fig.7 Guaranteed operating area as a function of Fig.8 Guaranteed operating area as a function of
the supply voltages for 74HC4052. the supply voltages for 74HCT4052.
2004 Nov 11 7
Philips Semiconductors Product specification
DC CHARACTERISTICS
Family 74HC4052
Vis is the input voltage at pins nYn or nZ, whichever is assigned as an input; Vos is the output voltage at pins nZ or nYn,
whichever is assigned as an output; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
OTHER VCC (V) VEE (V)
Tamb = −40 °C to +85 °C; note 1
VIH HIGH-level input 2.0 − 1.5 1.2 − V
voltage 4.5 − 3.15 2.4 − V
6.0 − 4.2 3.2 − V
9.0 − 6.3 4.7 − V
VIL LOW-level input 2.0 − − 0.8 0.5 V
voltage 4.5 − − 2.1 1.35 V
6.0 − − 2.8 1.8 V
9.0 − − 4.3 2.7 V
ILI input leakage current VI = VCC or GND 6.0 0 − − ±1.0 µA
10.0 0 − − ±2.0 µA
IS(OFF) analog switch VI = VIH or VIL;
OFF-state current VS = VCC − VEE; see Fig.9
per channel 10.0 0 − − ±1.0 µA
all channels 10.0 0 − − ±2.0 µA
IS(ON) analog switch VI = VIH or VIL; 10.0 0 − − ±2.0 µA
ON-state current VS = VCC − VEE; see Fig.10
ICC quiescent supply VI = VCC or GND; 6.0 0 − − 80.0 µA
current Vis = VEE or VCC; 10.0 0 − − 160.0 µA
Vos = VCC or VEE
2004 Nov 11 8
Philips Semiconductors Product specification
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
OTHER VCC (V) VEE (V)
Tamb = −40 °C to +125 °C
VIH HIGH-level input 2.0 − 1.5 − − V
voltage 4.5 − 3.15 − − V
6.0 − 4.2 − − V
9.0 − 6.3 − − V
VIL LOW-level input 2.0 − − − 0.5 V
voltage 4.5 − − − 1.35 V
6.0 − − − 1.8 V
9.0 − − − 2.7 V
ILI input leakage current VI = VCC or GND 6.0 0 − − ±1.0 µA
10.0 0 − − ±2.0 µA
IS(OFF) analog switch VI = VIH or VIL;
OFF-state current VS = VCC − VEE; see Fig.9
per channel 10.0 0 − − ±1.0 µA
all channels 10.0 0 − − ±2.0 µA
IS(ON) analog switch VI = VIH or VIL; 10.0 0 − − ±2.0 µA
ON-state current VS = VCC − VEE; see Fig.10
ICC quiescent supply VI = VCC or GND; 6.0 0 − − 160 µA
current Vis = VEE or VCC; 10.0 0 − − 320.0 µA
Vos = VCC or VEE
Note
1. All typical values are measured at Tamb = 25 °C.
2004 Nov 11 9
Philips Semiconductors Product specification
Family 74HCT4052
Vis is the input voltage at pins nYn or nZ, whichever is assigned as an input; Vos is the output voltage at pins nZ or nYn,
whichever is assigned as an output; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
OTHER VCC (V) VEE (V)
Tamb = −40 °C to +85 °C; note 1
VIH HIGH-level input 4.5 to 5.5 − 2.0 1.6 − V
voltage
VIL LOW-level input 4.5 to 5.5 − − 1.2 0.8 V
voltage
ILI input leakage current VI = VCC or GND 5.5 0 − − ±1.0 µA
IS(OFF) analog switch VI = VIH or VIL;
OFF-state current VS = VCC − VEE; see Fig.9
per channel 10.0 0 − − ±1.0 µA
all channels 10.0 0 − − ±2.0 µA
IS(ON) analog switch VI = VIH or VIL; 10.0 0 − − ±2.0 µA
ON-state current VS = VCC − VEE; see Fig.10
ICC quiescent supply VI = VCC or GND; 5.5 0 − − 80.0 µA
current Vis = VEE or VCC; 5.0 −5.0 − − 160.0 µA
Vos = VCC or VEE
∆ICC additional quiescent VI = VCC − 2.1 V; other inputs 4.5 to 5.5 0 − 45 202.5 µA
supply current per at VCC or GND
input
Tamb = −40 °C to +125 °C
VIH HIGH-level input 4.5 to 5.5 − 2.0 − − V
voltage
VIL LOW-level input 4.5 to 5.5 − − − 0.8 V
voltage
ILI input leakage current VI = VCC or GND 5.5 0 − − ±1.0 µA
IS(OFF) analog switch VI = VIH or VIL;
OFF-state current VS = VCC − VEE; see Fig.9
per channel 10.0 0 − − ±1.0 µA
all channels 10.0 0 − − ±2.0 µA
IS(ON) analog switch VI = VIH or VIL; 10.0 0 − − ±2.0 µA
ON-state current VS = VCC − VEE; see Fig.10
ICC quiescent supply VI = VCC or GND; 5.5 0 − − 160.0 µA
current Vis = VEE or VCC; 5.0 −5.0 − − 320.0 µA
Vos = VCC or VEE
∆ICC additional quiescent VI = VCC − 2.1 V; other inputs 4.5 to 5.5 0 − − 220.5 µA
supply current per at VCC or GND
input
Note
1. All typical values are measured at Tamb = 25 °C.
2004 Nov 11 10
Philips Semiconductors Product specification
nYn nZ
A A
VEE
MNB048
nYn nZ
VEE
MNB049
2004 Nov 11 11
Philips Semiconductors Product specification
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
OTHER VCC (V) VEE (V) IS (µA)
Tamb = −40 °C to +85 °C; note 3
RON(peak) ON-resistance Vis = VCC to VEE; 2.0 0 100 − − − Ω
(peak) VI = VIH or VIL 4.5 0 1000 − 100 225 Ω
6.0 0 1000 − 90 200 Ω
4.5 −4.5 1000 − 70 165 Ω
RON(rail) ON-resistance (rail) Vis = VEE; 2.0 0 100 − 150 − Ω
VI = VIH or VIL 4.5 0 1000 − 80 175 Ω
6.0 0 1000 − 70 150 Ω
4.5 −4.5 1000 − 60 130 Ω
Vis = VCC; 2.0 0 100 − 150 − Ω
VI = VIH or VIL 4.5 0 1000 − 90 200 Ω
6.0 0 1000 − 80 175 Ω
4.5 −4.5 1000 − 65 150 Ω
∆RON maximum Vis = VCC to VEE; 2.0 0 − − − − Ω
ON-resistance VI = VIH or VIL 4.5 0 − − 9 − Ω
difference between
6.0 0 − − 8 − Ω
any two channels
4.5 −4.5 − − 6 − Ω
Tamb = −40 °C to +125 °C
RON(peak) ON-resistance Vis = VCC to VEE; 2.0 0 100 − − − Ω
(peak) VI = VIH or VIL 4.5 0 1000 − − 270 Ω
6.0 0 1000 − − 240 Ω
4.5 −4.5 1000 − − 195 Ω
RON(rail) ON-resistance (rail) Vis = VEE; 2.0 0 100 − − − Ω
VI = VIH or VIL 4.5 0 1000 − − 210 Ω
6.0 0 1000 − − 180 Ω
4.5 −4.5 1000 − − 160 Ω
Vis = VCC; 2.0 0 100 − − − Ω
VI = VIH or VIL 4.5 0 1000 − − 240 Ω
6.0 0 1000 − − 210 Ω
4.5 −4.5 1000 − − 180 Ω
Notes
1. For 74HC4052: VCC − GND or VCC − VEE = 2.0, 4.5, 6.0 and 9.0 V; for 74HCT4052: VCC − GND = 4.5 and 5.5 V,
VCC − VEE = 2.0, 4.5, 6.0 and 9.0 V.
2. When supply voltages (VCC − VEE) near 2.0 V the analog switch ON-resistance becomes extremely non-linear. When
using a supply of 2 V, it is recommended to use these devices only for transmitting digital signals.
3. All typical values are measured at Tamb = 25 °C.
2004 Nov 11 12
Philips Semiconductors Product specification
nYn
nZ
VEE
MNB046
MNB047
100
handbook, halfpage
RON (1)
(Ω)
80
(2)
60
(3)
40
20
0
0 1.8 3.6 5.4 7.2 9
Vis (V)
2004 Nov 11 13
Philips Semiconductors Product specification
AC CHARACTERISTICS
Type 74HC4052
GND = 0 V; tr = tf = 6 ns; CL = 50 pF.
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
OTHER VCC (V) VEE (V)
Tamb = −40 °C to +85 °C; note 1
tPHL/tPLH propagation delay Vis to Vos RL = ∞; see Fig.19 2.0 0 − 14 75 ns
4.5 0 − 5 15 ns
6.0 0 − 4 13 ns
4.5 −4.5 − 4 10 ns
tPZH/tPZL turn-on time E, Sn to Vos RL = ∞; see Figs 20, 2.0 0 − 105 405 ns
22 and 21 4.5 0 − 38 81 ns
6.0 0 − 30 69 ns
4.5 −4.5 − 26 58 ns
tPHZ/tPLZ turn-off time E, Sn to Vos RL = 1 kΩ; see Figs 20, 2.0 0 − 74 315 ns
22 and 21 4.5 0 − 27 63 ns
6.0 0 − 22 54 ns
4.5 −4.5 − 22 48 ns
Tamb = −40 °C to +125 °C
tPHL/tPLH propagation delay Vis to Vos RL = ∞; see Fig.19 2.0 0 − − 90 ns
4.5 0 − − 18 ns
6.0 0 − − 15 ns
4.5 −4.5 − − 12 ns
tPZH/tPZL turn-on time E, Sn to Vos RL = ∞; see Figs 20, 2.0 0 − − 490 ns
22 and 21 4.5 0 − − 98 ns
6.0 0 − − 83 ns
4.5 −4.5 − − 69 ns
tPHZ/tPLZ turn-off time E, Sn to Vos RL = 1 kΩ; see Figs 20, 2.0 0 − − 375 ns
22 and 21 4.5 0 − − 75 ns
6.0 0 − − 64 ns
4.5 −4.5 − − 57 ns
Note
1. All typical values are measured at Tamb = 25 °C.
2004 Nov 11 14
Philips Semiconductors Product specification
Type 74HCT4052
GND = 0 V; tr = tf = 6 ns; CL = 50 pF.
TEST CONDITIONS
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
OTHER VCC (V) VEE (V)
Tamb = −40 °C to +85 °C; note 1
tPHL/tPLH propagation delay Vis to Vos RL = ∞; see Fig.19 4.5 0 − 5 15 ns
4.5 −4.5 − 4 10 ns
tPZH/tPZL turn-on time E, Sn to Vos RL = 1 kΩ; see Figs 20, 4.5 0 − 41 88 ns
22 and 21 4.5 −4.5 − 28 60 ns
tPHZ tPLZ turn-off time E, Sn to Vos RL = 1 kΩ; see Figs 20, 4.5 0 − 26 63 ns
22 and 21 4.5 −4.5 − 21 48 ns
Tamb = −40 °C to +125 °C
tPHL/tPLH propagation delay Vis to Vos RL = ∞; see Fig.19 4.5 0 − − 18 ns
4.5 −4.5 − − 12 ns
tPZH/tPZL turn-on time E, Sn to Vos RL = 1 kΩ; see Figs 20, 4.5 0 − − 105 ns
22 and 21 4.5 −4.5 − − 72 ns
tPHZ/tPLZ turn-off time E, Sn to Vos RL = 1 kΩ; see Figs 20, 4.5 0 − − 75 ns
22 and 21 4.5 −4.5 − − 57 ns
Note
1. All typical values are measured at Tamb = 25 °C.
2004 Nov 11 15
Philips Semiconductors Product specification
Notes
1. Adjust input voltage Vis to 0 dBm level (0 dBm = 1 mW into 600 Ω).
2. Adjust input voltage Vis to 0 dBm level at Vos for 1 MHz (0 dBm = 1 mW into 50 Ω).
RL CL dB
channel
GND
ON
MNB052
Fig.13 Test circuit for measuring sine-wave distortion and minimum frequency response.
2004 Nov 11 16
Philips Semiconductors Product specification
RL CL dB
channel
GND
OFF
MNB053
0
handbook, full pagewidth
−0
−0
−0
−0
−00
0 0 0 0 0 0
RL CL RL RL CL dB
channel channel
ON OFF
GND GND
MNB054
(a) (b)
Fig.16 Test circuits for measuring crosstalk between any two switches/multiplexers.
2004 Nov 11 17
Philips Semiconductors Product specification
2RL 2RL
nYn/nZ nZ/nYn
V(p−p) DUT
GND
VEE
MNB055
Fig.17 Test circuit for measuring crosstalk between control and any switch.
5
handbook, full pagewidth
−5
0 0 0 0 0 5 0
2004 Nov 11 18
Philips Semiconductors Product specification
AC WAVEFORMS
VI
handbook, halfpage
GND
tPLH tPHL
VOH
VOL
MNB056
Fig.19 Waveforms showing the input (Vis) to output (Vos) propagation delays.
90%
E, Sn input VM
10%
tPLZ tPZL
tPHZ tPZH
90%
50%
Vos output
2004 Nov 11 19
Philips Semiconductors Product specification
tr and tf
FAMILY AMPLITUDE VM
fmax; PULSE WIDTH OTHER
74HC4052 VCC 50 % < 2 ns 6 ns
74HCT4052 3.0 V 1.3 V < 2 ns 6 ns
GND
VEE
MNB058
2004 Nov 11 20
Philips Semiconductors Product specification
PACKAGE OUTLINES
D ME
seating plane
A2
A
L A1
c
Z e b1 w M
(e1)
MH
b b2
16 9
pin 1 index
E
1 8
0 5 10 mm
scale
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
A A1 A2 Z (1)
UNIT max. b b1 b2 c D (1) E (1) e e1 L ME MH w
min. max. max.
1.65 0.51 1.14 0.36 19.3 6.45 3.81 8.23 9.40
mm 4.32 0.38 3.56 2.54 7.62 0.254 0.76
1.40 0.41 0.76 0.20 18.8 6.24 2.92 7.62 8.38
inches 0.065 0.020 0.045 0.014 0.76 0.254 0.150 0.324 0.37
0.17 0.015 0.14 0.1 0.3 0.01 0.03
0.055 0.016 0.030 0.008 0.74 0.246 0.115 0.300 0.33
Note
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
97-07-24
SOT38-9
03-03-12
2004 Nov 11 21
Philips Semiconductors Product specification
SO16: plastic small outline package; 16 leads; body width 3.9 mm; body thickness 1.47 mm SOT109-3
D E A
X
y HE v M A
16 9
A2
(A 3) A
A1
pin 1 index
θ
Lp
1 8 L
e w M detail X
bp
0 2.5 5 mm
scale
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
98-12-23
SOT109-3 MS-012AC
03-02-19
2004 Nov 11 22
Philips Semiconductors Product specification
SSOP16: plastic shrink small outline package; 16 leads; body width 5.3 mm SOT338-1
D E A
X
c
y HE v M A
16 9
Q
A2 A
A1 (A 3)
pin 1 index
θ
Lp
L
1 8 detail X
w M
e bp
0 2.5 5 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
99-12-27
SOT338-1 MO-150
03-02-19
2004 Nov 11 23
Philips Semiconductors Product specification
TSSOP16: plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403-1
D E A
X
y HE v M A
16 9
Q
A2 (A 3)
A
A1
pin 1 index
θ
Lp
L
1 8
detail X
w M
e bp
0 2.5 5 mm
scale
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
99-12-27
SOT403-1 MO-153
03-02-18
2004 Nov 11 24
Philips Semiconductors Product specification
DHVQFN16: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;
16 terminals; body 2.5 x 3.5 x 0.85 mm SOT763-1
D B A
A
A1
E c
terminal 1 detail X
index area
terminal 1 C
e1
index area
e b v M C A B y1 C y
w M C
2 7
1 8
Eh e
16 9
15 10
Dh
X
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
A(1)
UNIT
max.
A1 b c D (1) Dh E (1) Eh e e1 L v w y y1
02-10-17
SOT763-1 --- MO-241 ---
03-01-27
2004 Nov 11 25