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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 26: Schottky Diode (II)
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1) DC Thermionic current (detailed derivation)
2) AC small signal and large‐signal response
3) Additional information
4) Conclusions

Ref. SDF, Chapter 14

2
Alam  ECE‐606 S09 2
Energy Resolved Thermionic Flux 
occupation
~ DOS
∞ ∞ −υmin
Ω − ( E − EF ) β
J s →m = −q ∫ ∫ ∫ dk x dk y dk z e υx
−∞ −∞ −∞
4π 3

υmin
q(Vbi‐VA)
VA

EC‐EF
x
Alam  ECE‐606 S09 3
 Thermionic Flux from Semi to Metal .. 
E
∞ ∞ −υmin EC
Ω − ( E − EF ) β
J s →m = −q ∫ ∫ ∫ dk dk dk e υx EF
4π 3 x y z
−∞ −∞ −∞

1 * 2 1 * 2 1 * 2
E − EF = ( E − EC ) + ( EC − EF ) = m υ x + m υ y + m υ z + ( EC − EF )
2 2 2

Ω d ( m υx ) d ( m υ y ) d ( m υz )
∞ ∞ −υmin * * *
−
( mυ x + mυ y + mυ z
2 2 2
)β
− ( Ec − EF ) β
= qe ∫ ∫ ∫
−∞ −∞ −∞
4π 3
= = =
e 2
υx

qΩ ( m ⎡ ∞ −⎛⎜ m*υ y2 ⎞⎟ β ⎤ ⎡ ∞ −⎛⎜ m*υ z2 ⎟⎞ β

)
* 3
−( Ec − EF ) β ⎢ e⎝ ⎜ 2 ⎟
⎥⎢ e ⎝ ⎜ 2 ⎟
⎤
⎥⎢
⎡ −υmin ⎛ m*υ x2 ⎞
−⎜
⎜ 2 ⎟⎟
β ⎤
υx ⎥
J s →m =
4π 3 =3
e
⎢ ∫
−∞
∞
⎠
dυ y
⎥⎢ ∫
−∞
∞
⎠
dυ z ∫
⎥ ⎢ −∞∞
dυ x e ⎝ ⎠
⎥
⎢⎣ ⎥⎦ ⎣ ⎦⎣ ⎦

Alam  ECE‐606 S09 4
 Thermionic Current …  2q
* ( bi
υmin = V − VA )
m

⎡ ∞ −⎜⎛ m*υ y2 ⎟⎞ β ⎤ ⎡ ∞ −⎜⎛ m*υ z2 ⎟⎞ β

qΩ ( m ) ⎤ ⎡ ⎤
* 3 −υmin ⎛ m*υ x2 ⎞
−⎜ β
⎜ 2 ⎟⎟
−( Ec − EF ) β ⎢ e⎝ ⎜ 2 ⎟
dυ y ⎥ ⎢ ∫ e ⎝
⎜ 2 ⎟
dυ z ⎥ ⎢ ∫ dυ x e ⎝ υx ⎥
J s →m =
4π 3 =3
e
⎢ ∫
−∞
⎠
⎥⎢
⎠
⎥ ⎢ −∞
⎠
⎥
⎢⎣ ⎥⎦ ⎣ −∞ ⎦⎣ ⎦

1 − q (Vbi −VA ) β
π π 2
e

4π qm k 2 ( EF − EC − qVbi ) β qVA β
* 2
qVA β
J s →m = 3
T e e = A0 e
h

J T = J s →m − J m→ s = A0 ( e qV A β
− 1)
Compare with p‐n junction … where is the bandgap, doping?
5
 Recombination/Generation/Impact‐ionization

EFM
Ec
EFM EFS
EF
EV

SAME technique as in p‐n junction except integrate to xp only 6
Outline

1) DC Thermionic current (detailed derivation)
2) AC small signal and large‐signal response
3) Additional information
4) Conclusions

Alam  ECE‐606 S09 7
Topic Map

Equilibrium DC Small 
Small Large 
Large Circuits
signal Signal
Diode

Schottky

BJT/HBT

MOS

Alam  ECE‐606 S09 8
AC response 

Conductance
Junction 
Capacitance

Series 
Resistance
Diffusion 
Capacitance

Alam  ECE‐606 S09 9
Forward Bias Conductance 

gFB

(
I = Io e
q (VA − RS I ) β / m
)
−1

I + Io
ln = q (VA − RS I ) β / m
I0

m
=
dVA
− RS
1 m
qβ ( I + I o ) dI
= RS +
g FB qβ ( I + I 0 )

Alam  ECE‐606 S09 10
Junction Capacitance (Majority Carriers) 
Junction 
Capacitance

κ sε 0 A
CJ =
W
κ sε 0 A
CJ =
2κ s ε 0
(Vbi − V A )
qN D
Alam  ECE‐606 S09 11
No Diffusion Capacitance in Schottky Diode 
p‐n Diode  Schottky diode

VA

No minority carrier transport and

therefore no diffusion capacitance ..
Alam  ECE‐606 S09 12
 Reducing diffusion capacitance in p‐n diode   
p‐n Diode  Schottky diode
n

VA

Short minority carrier lifetime in p-n junction diode

equivalent to rapid energy relaxation in SB diode. 13
Outline

1) DC Thermionic current (detailed derivation)
2) AC small signal and large‐signal response
3) Additional information
4) Conclusions

Alam  ECE‐606 S09 14
Ohmic Contact vs. Schottky contacts ..  
Metal Oxide

n+
n‐Si

Low Doping Moderate Doping High Doping

Alam  ECE‐606 S09 15
Lowering of Schottky Barrier 
E

qφB qφ1 qφB qφ1

Metal Semi Metal Semi

‐
‐
‐ IImage 
‐ Electron
‐
Surface ‐
Charge
‐
Charge ‐
x x
Alam  ECE‐606 S09 Ref. Sze/Ng., p. 143 16
Fermi‐level Pinning
Density of 
Regardless the workfunction, no
States
modulation in potential.
Ec (e g Modern high-k
(e.g. high k dielectrics)
Ef
Full
Ev
Full

Metal Semiconductor Metal

Shift in the 
Band edge
Ec
Ef
Full Full
Ev
Metal Metal
A B

Alam  ECE‐606 S09 17
Conclusion

1) Schottky diodes have wide range of applications in 
practical devices. 
2) The key distinguishing feature of Schottky diode is that 
it is a majority carrier device.
it is a majority carrier device. 
3) We use a different technique to calculate the current in 
a majority carrier device It is called thermionic
a majority carrier device. It is called thermionic 
emission. 

Alam  ECE‐606 S09 18