EE-606:

Lecture 36
MOSFET Current-Voltage (II)
Muhammad Ashraful Alam
Electrical and Computer Engineering
Purdue University
West Lafayette, IN USA
Fall 2007

NCN
www.nanohub.org
Alam ECE-606 S08 1
 topic map

Equilibrium DC Small Large Circuits

signal Signal

Diode

Schottky

BJT/HBT

MOS-
FET

Alam ECE-606 S08 2

 outline

1) Square law/ simplified bulk charge theory

2) Velocity saturation in simplified theory

3) Few comments about bulk charge theory, small transistors

2) Conclusion

Alam ECE-606 S08 3

 square law theory
dV
J1 = Q1 µ E1 = Q1 µ VG
dy 1
0 VD>0
dV
J 2 = Q2 µ E2 = Q2 µ
dy 2

dV
J 3 = Q3 µ E3 = Q3 µ
dy 3

dV
J 4 = Q4 µ E4 = Q4 µ
dy 4

Q
J i dy
∑
i =1, N µ
= ∑
i =1, N
Qi dV
VD
JD
µ
∑ dy = ∫ C
i =1, N
ox (VG − Vth − mV )dV
0
V VD
µCox  VD 2 
JD = (VG − Vth )VD − m 
Lch  2 
Alam ECE-606 S08 4
square law or simplified bulk charge theory

VDSAT = (VGS − VT ) / m
ID W µ Co
ID = (VG − VT )
2

2mLch
VGS

VDS
W
I D = µ Co (VG − VT )VD
L
Alam ECE-606 S08 5
 outline

1) Square law/ simplified bulk charge theory

2) Velocity saturation in simplified theory

3) Few comments about bulk charge theory, small transistors

2) Conclusion

Alam ECE-606 S08 6

 velocity vs. field characteristic (electrons)

− µE
υd =
2 1/2
1 + (E Ec ) 
velocity cm/s --->

107 υ = υ sat
− µE
υd =
1 + ( E Ec )
υ = µE µ EC = υ sat

104
electric field V/cm --->

Alam ECE-606 S08 7

 velocity saturation
VG
0 VD>0

dV
J1 = Q1 µ1 E1 = Q1 µ1
dy 1

dV
J 2 = Q2 µ 2E2 = Q2 µ 2
dy 2

dV
J 3 = Q3 µ3 E3 = Q3 µ 3 J i dy
dy 3 ⇒ ∑
i =1, N
= ∑ Qi dV
µ ( x) i =1, N
dV
J 4 = Q4 µ 4 E4 = Q4 µ 4
dy 4

Alam ECE-606 S08 8

 velocity saturation
VD VG
dy 0 VD>0
JD ∑
i =1, N  E 
= ∫ Cox (VG − Vth − mV )dV
µ0 1 + 
0

 Ec 

 1 dV   mVD 2 
Lch
JD
∫ dy 1 +  = Cox (VG − Vth )VD − 
µ0 0  Ec dy   2  Q

 mVD 2 
Lch VDS
ID
∫I D dy + ∫ dV = Cox (VG − Vth )VD −  υ vsat
0 0
Ec  2 

µ0Cox  mVD 2 
JD = (V − Vth )VD −
VD  G  V VD
Lch + 2 
Ec

Alam ECE-606 S08 9

 VDSAT

dI D
=0
dVDS

W 2

I D = Fv µ eff COX (VGS − VT )VDS − m
VDS
L  2 

2 (VGS − VT ) / m (VGS − VT )
VDSAT = <
1 + 1 + 2 µeff (VGS − VT ) mυ sat L m

Alam ECE-606 S08 10

 velocity saturation

µ0Cox  mVD 2  µ0EC Cox  VD 2 

JD = (V − Vth )VD −
VD  G ~ (VG − Vth )VD −  ~ υ sat Cox (VG − Vth )
Lch + 2  VD  2 
EC

VDSAT = (VGS − VT ) / m
ID
I D = Coυsat (VG − VT )
VGS

VDS
Alam ECE-606 S08 11
 ‘signature’ of velocity saturation

ID ID

VGS VGS

VDS VDS

ID =
W
µ eff Cox
(VGS − VT )
2

I D = W υ sat Cox (VGS − VT )

2L m
Alam ECE-606 S08 12
 ID and (VGS - VT)

I D (VDS = VDD ) ~ (VGS − VT )

α

ID
1<α < 2
VGS

complete long channel

velocity
VDS saturation

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 outline

1) Square law/ simplified bulk charge theory

2) Velocity saturation in simplified theory

3) Few comments about bulk charge

theory, small transistors, etc.

2) Conclusion

Alam ECE-606 S08 14

 approximations for inversion charge

Qi = −CO (VG − Vth − V ) + qN A (WT (V ) − WT (V = 0) )

= −CO (VG − Vth − V ) + 2qκ S ε o N A ( 2φB + V ) − 2qκ S ε o N A ( 2φB )

Approximations:
Qi ≈ −Cox (VG − Vth − V ) Square law approximation …

Qi ≈ −Cox (VG − Vth − mV ) Simplified bulk charge approximation …

Alam ECE-606 S08 15

 bulk-charge
VD VD
JD
µ0
∑ dy = ∫ C
i =1, N
O (VG − Vth − V )dV + ∫ [..........]dV
0 0

Lch VD VD
JD
µ0 ∫ dy = ∫ C
0 0
O (VG − Vth − V ) dV + ∫ [..........]dV
0

µ0Cox  VD 2
4 qN AWT  VD 
3/ 2
 3VD  
JD = (VG − Vth )VD − − φF 1 +  − 1 +  
Lch  2 3 CO  2φF   4φF  
  

(see Eq. 17.28 in SDF)

Alam ECE-606 S08 16

 velocity overshoot
103 V/cm 105 V/cm 103 V/cm
7
0.35

Kinetic energy per electron (eV)

Average velocity (cm/s) 2.0 10

0.3
7
1.5 10 0.25

υ sat 0.2
7
1.0 10
0.15

6 0.1
5.0 10
0.05

0
0.0 10 0
0 0.5 1 1.5
Position (µm)

υ ≠ µ n (E )E
Alam ECE-606 S08 17
velocity overshoot in a MOSFET

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 summary

1) Since current flow through the oxide is small, we are

primarily interested in the junction capacitance of the
MOS-capacitor.
2) High frequency of MOS-C is remarkably different
than low-frequency C-V. In MOSFET, we only see
low frequency response.
3) Deep depletion is an important consideration for
MOS-capacitor that does not happen in MOSFETs.

Alam ECE-606 S08 19

 Extra-slides for field-dep. Mobility: L --> inf

2 (VGS − VT ) / m
VDSAT =
1 + 1 + 2 µeff (VGS − VT ) mυ sat L

VDSAT →
(VGS − VT )
m
1 + 2 µeff (VGS − VT ) mυ sat L − 1
I DSAT = W CGυ sat (VGS − VT )
1 + 2 µeff (VGS − VT ) mυ sat L + 1

W (VGS − VT )
2

I DSAT → µ eff CG
2L m
Alam ECE-606 S08 20
 IDSAT

1 + 2 µeff (VGS − VT ) mυ sat L − 1

I DSAT = W CGυ sat (VGS − VT )
1 + 2 µeff (VGS − VT ) mυ sat L + 1

eqn. (3.78) of Taur and Ning

Examine two limits:

i) L → ∞
ii) L → 0

Alam ECE-606 S08 21

 L --> 0

2 (VGS − VT ) / m
VDSAT =
1 + 1 + 2 µeff (VGS − VT ) mυ sat L

VDSAT → 2υ sat L (VGS − VT ) m µeff

1 + 2 µeff (VGS − VT ) mυ sat L − 1

I DSAT = W CGυ sat (VGS − VT )
1 + 2 µeff (VGS − VT ) mυ sat L + 1

I DSAT = W CGυ sat (VGS − VT )

“complete velocity saturation”
current independent of L
Alam ECE-606 S08 22
 near threshold

2 (VGS − VT ) / m 2 µeff (VGS − VT )

VDSAT = << 1
1 + 1 + 2 µeff (VGS − VT ) mυ sat L mυ sat L

VDSAT → (VGS − VT ) m

1 + 2 µeff (VGS − VT ) mυ sat L − 1

I DSAT = W CGυ sat (VGS − VT )
1 + 2 µeff (VGS − VT ) mυ sat L + 1

W (VGS − VT )
2
near threshold is
I DSAT → µ eff CG
2L m like long channel
Alam ECE-606 S08 23