Mosfet: IPP50R380CE
Mosfet: IPP50R380CE
Mosfet: IPP50R380CE
MOSFET
500VCoolMOSªCEPowerTransistor PG-TO220
CoolMOS™isarevolutionarytechnologyforhighvoltagepower tab
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation
whilerepresentingacostappealingalternativecomparedtostandard
MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits
ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.
Extremelylowswitchingandconductionlossesmakeswitching
applicationsevenmoreefficient,morecompact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Drain
•Veryhighcommutationruggedness Pin 2
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
Gate
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 Pin 1
andJESD22)
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingPWM
stagesfore.g.PCSilverbox,LCD&PDPTVandLighting.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 550 V
RDS(on),max 0.38 Ω
ID 14.1 A
Qg,typ 24.8 nC
ID,pulse 32.4 A
Eoss @ 400V 2.54 µJ
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 14.1 TC = 25°C
Continuous drain current1) ID A
- - 8.9 TC = 100°C
Pulsed drain current2) ID,pulse - - 32.4 A TC=25°C
Avalanche energy, single pulse EAS - - 173 mJ ID =4A; VDD = 50V
Avalanche energy, repetitive EAR - - 0.26 mJ ID =4A; VDD = 50V
Avalanche current, repetitive IAR - - 4.0 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V
-20 - 20 static;
Gate source voltage VGS V
-30 - 30 AC (f>1 Hz)
Power dissipation (non FullPAK)
Ptot - - 98 W TC=25°C
TO-220
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Mounting torque (non FullPAK) TO-220 - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS - - 10 A TC=25°C
Diode pulse current 2)
IS,pulse - - 32.4 A TC = 25°C
VDS=0...400V,ISD<=IS,Tj=25°C,
Reverse diode dv/dt3) dv/dt - - 15 V/ns
tcond<2µs
VDS=0...400V,ISD<=IS,Tj=25°C,
Maximum diode commutation speed3) dif/dt - - 500 A/µs
tcond<2µs
2Thermalcharacteristics
Table3Thermalcharacteristics(nonFullPAK)TO-220
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.27 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads
1)
Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5
2)
Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 3 Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.26mA
- - 1 VDS=500V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=500V,VGS=0V,Tj=150°C
Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V
- 0.35 0.38 VGS=13V,ID=3.2A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.90 - VGS=13V,ID=3.2A,Tj=150°C
Gate resistance RG - 3 - Ω f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 584 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 40 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
Co(er) - 32 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 133 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=3.9A,
Turn-on delay time td(on) - 7.2 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=3.9A,
Rise time tr - 5.6 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=3.9A,
Turn-off delay time td(off) - 35 - ns
RG=3.4Ω
VDD=400V,VGS=13V,ID=3.9A,
Fall time tf - 8.6 - ns
RG=3.4Ω
Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 3.1 - nC VDD=400V,ID=3.9A,VGS=0to10V
Gate to drain charge Qgd - 13.1 - nC VDD=400V,ID=3.9A,VGS=0to10V
Gate charge total Qg - 24.8 - nC VDD=400V,ID=3.9A,VGS=0to10V
Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=3.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Final Data Sheet 4 Rev.2.2,2016-06-13
500VCoolMOSªCEPowerTransistor
IPP50R380CE
Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.85 - V VGS=0V,IF=3.9A,Tf=25°C
Reverse recovery time trr - 207 - ns VR=400V,IF=3.9A,diF/dt=100A/µs
Reverse recovery charge Qrr - 1.7 - µC VR=400V,IF=3.9A,diF/dt=100A/µs
Peak reverse recovery current Irrm - 15.5 - A VR=400V,IF=3.9A,diF/dt=100A/µs
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation Diagram2:Safeoperatingarea
100 102
90
1 µs
80
1
10
70
10 µs
60
100 µs
Ptot[W]
ID[A]
0
1 ms
50 10
10 ms
40
DC
30
10-1
20
10
0 10-2
0 40 80 120 160 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101
1 µs
101
10 µs 100
0.5
ZthJC[K/W]
0.2
ID[A]
100 µs
100
1 ms 0.1
10 ms 0.05
-1
0.02
10
DC
10-1
0.01
single pulse
10-2 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T
Typ.outputcharacteristicsTj=25°C Typ.outputcharacteristicsTj=125°C
40 25
35 20 V 20 V
10 V
20
30 10 V
8V
8V
25
15
7V
ID[A]
ID[A]
20
7V
10
15 6V
5.5 V
10 6V
5
5.5 V 5V
5 4.5 V
5V
4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS
Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance
1.4 1.2
1.0
1.2
RDS(on)[Ω]
10 V 0.4
0.8
0.2
0.6 0.0
0 5 10 15 20 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=3.2A;VGS=13V
Typ.transfercharacteristics Typ.gatecharge
35 10
25 °C
9
30
8
120 V
25 7
400 V
6
20
VGS[V]
ID[A]
15 150 °C
4
10 3
2
5
1
0 0
0 2 4 6 8 10 0 10 20 30
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD
Avalancheenergy Drain-sourcebreakdownvoltage
200 580
180
560
160
140 540
120
520
EAS[mJ]
VBR(DSS)[V]
100
500
80
60 480
40
460
20
0 440
0 25 50 75 100 125 150 175 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
EAS=f(Tj);ID=4A;VDD=50V VBR(DSS)=f(Tj);ID=1mA
Typ.capacitances Typ.Cossstoredenergy
4
10 4.0
3.5
2.5
Eoss[µJ]
C[pF]
102 2.0
Coss
1.5
101 1.0
Crss
0.5
100 0.0
0 100 200 300 400 500 0 100 200 300 400 500
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS)
Forwardcharacteristicsofreversediode
102
101
125 °C
IF[A]
25 °C
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD[V]
IF=f(VSD);parameter:Tj
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
V ,I
Rg1 VDS( peak)
VDS
VDS
VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
90%
VDS
VGS 10%
VGS
td(on) tr td(off) tf
ton toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
V(BR)DS
ID VDS
VDS VDS
ID
6PackageOutlines
Figure1OutlinePG-TO220,dimensionsinmm/inches
7AppendixA
Table11RelatedLinks
• IFXCoolMOSWebpage:www.infineon.com
• IFXDesigntools:www.infineon.com
RevisionHistory
IPP50R380CE
Revision:2016-06-13,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2012-08-24 Release of final version
2.1 2014-06-06 Removal of TO-220FP
2.2 2016-06-13 Updated ID rating, Zth, SOA and Pd curves
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