IPWS65R050CFD7A

MOSFET
650VCoolMOSªCFD7ASJPowerDevice PG-TO247-3

650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleading
automotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothe Tab
well-knownattributesofhighqualityandreliabilityrequiredbythe
automotiveindustry,thenewCoolMOS™CFD7Aseriesprovidesforan
integratedfastbodydiodeandcanbeusedforPFCandresonant
switchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC.
1
Features 2
3
•Latest650Vautomotivequalifiedtechnologywithintegratedfastbody
diodeonthemarketfeaturingultralowQrr
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•100%avalanchetested Drain
•Best-in-classRDS(on)inSMDandTHDpackages Pin 2, Tab

Benefits Gate *1

Pin 1
•Optimizedforhigherbatteryvoltagesupto475Vthankstofurther
improvedrobustness Source
•Lowerswitchinglossesenablinghigherswitchingfrequencies *1: Internal body diode Pin 3

•Highqualityandreliability
•Increasedefficiencyinlightloadandfullloadconditions

Potentialapplications
SuitableforPFCandDC-DCstagesfor:
•UnidirectionalandbidirectionalDC-DCconverters,
•On-BoardbatteryChargers

Productvalidation
QualifiedaccordingtoAECQ101

Pleasenote:Forproductionpartapprovalprocess(PPAP)releasewe
proposetoshareapplicationrelatedinformationduringanearlydesign
phasetoavoiddelaysinPPAPrelease.PleasecontactInfineonsales
office.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS 650 V
RDS(on),max 50 mΩ
Qg,typ 102 nC
ID,pulse 211 A
Eoss @ 400V 13.0 µJ
Body diode diF/dt 1300 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPWS65R050CFD7A PG-TO247-3 65A050F7 see Appendix A

Final Data Sheet 1 Rev.2.0,2020-06-08

This datasheet has been downloaded from http://www.digchip.com at this page
 650VCoolMOSªCFD7ASJPowerDevice
IPWS65R050CFD7A

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.0,2020-06-08

 650VCoolMOSªCFD7ASJPowerDevice
IPWS65R050CFD7A

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 45 TC=25°C
Continuous drain current1) ID A
- - 29 TC=100°C
Pulsed drain current2) ID,pulse - - 211 A TC=25°C
Avalanche energy, single pulse EAS - - 248 mJ ID=6.4A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 6.4 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS,pulse -30 - 30 V frepetition<=100kHz, tpulse <= 2ns
Power dissipation Ptot - - 227 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -40 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS - - 45 A TC=25°C
Diode pulse current 2)
IS,pulse - - 211 A TC=25°C
VDS=0...400V,ISD<=24.8A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 70 V/ns
see table 8
VDS=0...400V,ISD<=24.8A,Tj=25°C
Maximum diode commutation speed diF/dt - - 1300 A/µs
see table 8

1)
Limited by Tj max.
2)
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch with identical RG
Final Data Sheet 3 Rev.2.0,2020-06-08
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IPWS65R050CFD7A

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.55 °C/W -
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads

Final Data Sheet 4 Rev.2.0,2020-06-08

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IPWS65R050CFD7A

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage1) V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage2) V(GS)th 3.5 4 4.5 V VDS=VGS,ID=1.24mA
- - 1 VDS=650V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 120 - VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 0.1 µA VGS=20V,VDS=0V
- 0.041 0.050 VGS=10V,ID=24.8A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.092 - VGS=10V,ID=24.8A,Tj=150°C
Gate resistance RG - 3.8 - Ω f=250kHz,opendrain

Table5Dynamiccharacteristics
External parasitic elements (PCB layout) influence switching behavior significantly.
Stray inductances and coupling capacitances must be minimized.
For layout recommendations please use provided application notes or contact Infineon sales office.
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 4975 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 68 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 163 - pF VGS=0V,VDS=0...400V
related3)
Effective output capacitance, time
Co(tr) - 1713 - pF ID=constant,VGS=0V,VDS=0...400V
related4)
VDD=400V,VGS=13V,ID=24.8A,
Turn-on delay time td(on) - 34 - ns
RG=3.3Ω;seetable9
VDD=400V,VGS=13V,ID=24.8A,
Rise time tr - 12 - ns
RG=3.3Ω;seetable9
VDD=400V,VGS=13V,ID=24.8A,
Turn-off delay time td(off) - 115 - ns
RG=3.3Ω;seetable9
VDD=400V,VGS=13V,ID=24.8A,
Fall time tf - 3 - ns
RG=3.3Ω;seetable9

1)
For applications with applied blocking voltage > 475 V, we recommend to evaluate the impact of the cosmic radiation
effect in early design phase. For assessment, please contact local Infineon sales office.
2)
We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of
potential “linear mode”, please contact Infineon sales office.
3)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
4)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.0,2020-06-08
 650VCoolMOSªCFD7ASJPowerDevice
IPWS65R050CFD7A

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 29 - nC VDD=400V,ID=24.8A,VGS=0to10V
Gate to drain charge Qgd - 31 - nC VDD=400V,ID=24.8A,VGS=0to10V
Gate charge total Qg - 102 - nC VDD=400V,ID=24.8A,VGS=0to10V
Gate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=24.8A,VGS=0to10V

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 1.1 - V VGS=0V,IF=24.8A,Tj=25°C
VR=400V,IF=24.8A,diF/dt=100A/µs;
Reverse recovery time trr - 177 - ns
see table 8
VR=400V,IF=24.8A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 1.2 - µC
see table 8
VR=400V,IF=24.8A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 11.8 - A
see table 8

Final Data Sheet 6 Rev.2.0,2020-06-08

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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
250 103

1 µs
200 102

10 µs
150 101
Ptot[W]

ID[A]
100 µs
100 100

1 ms
50 10-1

0 10-2
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

102
1 µs
0.5

10 µs
101
ZthJC[°C/W]

0.2
ID[A]

10-1
100 µs
100 0.1

0.05

1 ms
10-1 0.02

0.01

single pulse
10-2 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2020-06-08

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Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
350 200

20 V 20 V
300 10 V
10 V 160
8V
250 8V 7V

120
200
ID[A]

ID[A]
150
7V 80

6V
100

40
50 5.5 V
6V
5V
5.5 V
4.5 V 5V 4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.150 2.5

0.140

0.130 2.0
RDS(on)[normalized]

0.120
RDS(on)[Ω]

0.110 1.5

0.100 5.5 V 6V 6.5 V 7V 10 V 20 V

0.090 1.0

0.080

0.070 0.5
0 50 100 150 200 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=24.8A;VGS=10V

Final Data Sheet 8 Rev.2.0,2020-06-08

 650VCoolMOSªCFD7ASJPowerDevice
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Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
350 12

300 25 °C
10

250
8 120 V 400 V

200

VGS[V]
ID[A]

6
150 °C
150

4
100

2
50

0 0
0 2 4 6 8 10 12 0 20 40 60 80 100 120 140
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=24.8Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 250

200

101

150
EAS[mJ]
IF[A]

125 °C 25 °C
100
0
10

50

10-1 0
0.0 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=6.4A;VDD=50V

Final Data Sheet 9 Rev.2.0,2020-06-08

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Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
750 105

720 104
Ciss

690 103
VBR(DSS)[V]

C[pF]
660 102 Coss

630 101
Crss

600 100
-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
17
16
15
14
13
12
11
10
Eoss[µJ]

9
8
7
6
5
4
3
2
1
0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2020-06-08

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5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.0,2020-06-08

 650VCoolMOSªCFD7ASJPowerDevice
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6PackageOutlines

PG-TO247-3-31
Z8B00198400 Rev. 01

Figure1OutlinePG-TO247-3,dimensionsinmm

Final Data Sheet 12 Rev.2.0,2020-06-08

 650VCoolMOSªCFD7ASJPowerDevice
IPWS65R050CFD7A

7AppendixA

Table11RelatedLinks
• IFXCoolMOSCFD7AWebpage:www.infineon.com

• IFXCoolMOSCFD7Aapplicationnote:www.infineon.com

• IFXCoolMOSCFD7Asimulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 13 Rev.2.0,2020-06-08

 650VCoolMOSªCFD7ASJPowerDevice
IPWS65R050CFD7A

RevisionHistory
IPWS65R050CFD7A

Revision:2020-06-08,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2020-06-08 Release of final version

Trademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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Final Data Sheet 14 Rev.2.0,2020-06-08