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Silicon Controlled Rectifier: High-Reliability Discrete Products and Engineering Services Since 1977

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2N4199-2N4204

SILICON CONTROLLED RECTIFIER


High-reliability discrete products
and engineering services since 1977

FEATURES
 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Reverse Blocking Voltage, Note 1 (TJ = 105°C) VRRM 50 Volts
2N4199 300
2N4200 400
2N4201 500
Peak Forward Blocking Voltage, Note 1 (TC = 105°C) VDRM Volts
2N4202 600
2N4203 700
2N4204 800
Repetitive Peak On-State Current
ITRM 100 Amps
(PW = 3 µs, Duty Cycle = 0.6%, TC = 85°C)
Continuous On-State Current (TC = 65°C) IT 5 Amps
Current Application Rate, Note 2 di/dt 5000 A/µs
Peak Forward Gate Power PGFM 20 Watt
Average Forward Gate Power PGF(AV) 1 Watt
Peak Forward Gate Current IGFM 5 Amps
Peak Gate Voltage – Forward VGFM 10
Volts
Reverse, Note 3 VGRM 10
Operating Junction Temperature Range
Blocking State TJ -65 to +105 °C
Conducting State -65 to +200
Storage Temperature Range Tstg -65 to +200 °C
Stud Torque - 15 In. lb.
Thermal resistance, junction to case RӨJC 3 °C/W
Note 1: Characterized for unilateral applications where reverse blocking capability is not important. V DRM and VRRM may be applied as a continuous dc voltage for zero or negative gate voltage
but positive gate voltage must not be applied concurrently with a negative potential on the anode. When checking blocking capability, do not permit the applied voltage to exceed the rated
voltage.
Note 2: Minimum Gate Trigger Pulse: IG = 200 mA, PW = 1 µs, tr = 20 ns.
Note 3: Do not reverse bias gate during forward conduction if anode current exceeds 10 amperes.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)


Characteristics Symbol Min Max Unit
Peak Forward or Reverse Blocking Current
IDRM, IRRM - 2 mA
(Rated VDRM or VRRM, gate open) TC = 105°C)
Gate Trigger Current (Continuous dc)
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C) IGT - 50 mA
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C) - 100
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = rated VDRM, RL = 100 ohms, TC = 105°C) 0.2 -
VGT Volts
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C) - 1.5
(Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C) - 2

Rev. 20150604
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977

Characteristics Symbol Min Max Unit


Holding Current
IH 3 - mA
(Anode Voltage = 7 Vdc, gate open, TC = 105°C)
Forward “on” Voltage
VTM 2.6 - Volts
(ITM = 5 Adc, PW = 1 ms max, Duty Cycle ≤ 1%)
Dynamic Forward “on” Voltage
(0.5 µs after 50% decay point on dynamic forward voltage waveform)
VTM - 25 Volts
Forward Current: 30 A pulse
Gate Pulse: at 200 mA, PW = 1 µs, tr = 20 ns
Turn-on Time ITM = 30 A
Delay Time All Types - 200
Rise Time 2N4199 & 2N4200 - 200
td ns
2N4201 - 150
tr
2N4202 - 130
2N4203 & 2N4204 - 100
Pulse Turn-off Time
Test Conditions: PFN discharge; Forward Current = 30 A pulse;
Reverse Current = 5 A, TC = 85°C, dv/dt = 250V/µs to Rated VDRM; tq - 20 µs
Reverse Anode Voltage during turn-off interval = 0 V;
Reverse gate bias during turn-off interval = 6 V
Forward Voltage Application Rate (Linear Rise of Voltage)
dv/dt 250 - V/µs
(TC = 105°, gate open, VD = Rated VDRM

Rev. 20150604
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977

MECHANICAL CHARACTERISTICS
Case TO-64
Marking Alpha-numeric
Pin out See below

Rev. 20150604
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977

Rev. 20150604
2N4199-2N4204
SILICON CONTROLLED RECTIFIER
High-reliability discrete products
and engineering services since 1977

Rev. 20150604

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