2SK2640 PDF
2SK2640 PDF
2SK2640 PDF
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R th(ch-a) channel to air 62,5 °C/W
R th(ch-c) channel to case 2,5 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET 2SK2640-01MR
500V 0,9Ω 10A 50W FAP-IIS Series
> Characteristics
Typical Output Characteristics Drain-Source On-State Resistance vs. Tch Typical Transfer Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C RDS(on) = f(Tch); ID=5A; VGS=10V ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑ ↑ ↑
RDS(ON) [Ω]
ID [A]
ID [A]
1 2 3
Typical Drain-Source On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑ ↑ ↑
RDS(ON) [Ω]
gfs [S]
VGS(th) [V]
4 5 6
Typical Capacitances vs. VDS Typical Gate Charge Characteristic Forward Characteristics of Reverse Diode
C=f(VDS); VGS=0V; f=1MHz VGS=f(Qg); ID=10A; Tc=25°C IF=f(VSD); 80µs pulse test; VGS=0V
↑ ↑ ↑ ↑
C [F]
VDS [V]
VGS [V]
IF [A]
7 8 9
↑ ↑
Zthch=f(t) parameter:D=t/T
10 12
ID [A]
Eas [mJ]
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